Technical Sessions

-

Steven Turner
BAE Systems, Inc.
Waleed Khalil
Ohio State Univ.
Location
201A
Abstract
This session covers RF & IF front-ends and  sub-components targeting 5G.  On the receiver side, a combined LNA-Vector Modulator, a VCO-pulling  mitigation technique for carrier aggregation and a digitized beamformer are presented. In addition,  a transformer-coupled Ku-band VCO suitable for LO generation is demonstrated.  
Technical Papers
Abstract
RMo1A-1: A 25.1–27.6GHz Tunable-Narrowband Digitally-Calibrated Merged LNA-Vector Modulator for 5G Phased Arrays
Rahul Singh, Susnata Mondal, Jeyanandh Paramesh
Rahul Singh, Carnegie Mellon Univ.
(08:00 - 08:20)
Abstract
RMo1A-2: A Robust Reconfigurable Front-End for Non-Contiguous Multi-Channel Carrier Aggregation Receivers
Dror Regev, Shimi Shilo, Doron Ezri, Junping Zhang
Dror Regev, Toga Networks
(08:20 - 08:40)
Abstract
RMo1A-3: A True Time Delay 16-Element 4-Beam Digital Beamformer
Sunmin Jang, Rundao Lu, Jaehun Jeong, Michael P. Flynn
Sunmin Jang, Univ. of Michigan
(08:40 - 09:00)
Abstract
RMo1A-4: A 9.4–11.7GHz VCO in 0.12µm SiGe BiCMOS with -123dBc/Hz Phase Noise at 1MHz Offset for 5G Systems
Eric C. Wagner, Gabriel M. Rebeiz
Eric C. Wagner, Univ. of California, San Diego
(09:00 - 09:20)
Richard Chan
QORVO, Inc.
Tzung-Yin Lee
Skyworks Solutions, Inc.
Location
201B
Abstract
New mm-wave and phase array applications demand co-design of circuits and advanced packaging. This session starts with a practical example of advanced mm-wave components realized at WLCSP, followed by efficient mm-wave IC synthesis and design methodologies for wireless and optical applications. The session will conclude with an application of SOI-EDNMOS for high power and high-efficiency PA.
Technical Papers
Abstract
RMo1B-1: Chip-Package-PCB Co-Design of Power Combiners in SESUB and WLCSP Technology with Re-Distribution Layers
Thanh Vinh Dinh, Sidina Wane, Dominique Lesénéchal, Philippe Descamps, Laurent Leyssenne, Damienne Bajon
Thanh Vinh Dinh, LaMIPS
(08:00 - 08:20)
Abstract
RMo1B-2: An Efficient mm-Wave Integrated Circuit Synthesis Method with Accurate Scalable Passive Component Modeling
Zhijian Pan, Wei Zhu, Qiang Yao, Di Li, Zuochang Ye, Yan Wang
Zhijian Pan, Tsinghua Univ.
(08:20 - 08:40)
Abstract
RMo1B-3: A Low Power PWM Optical Phased Array Transmitter with 16° Field-of-View and 0.8° Beamwidth
Reza Fatemi, Aroutin Khachaturian, Ali Hajimiri
Reza Fatemi, Caltech
(08:40 - 09:00)
Abstract
RMo1B-4: A CMOS-SOI Power Amplifier Technology Using EDNMOS for Sub 6GHz Wireless Applications
Rui Tze Toh, Shyam Parthasarathy, Shaoqiang Zhang, Madabusi Govindarajan, Jen Shuang Wong, Kok Wai Johnny Chew, Luis Andia, Diing Shenp Ang
Rui Tze Toh, GLOBALFOUNDRIES
(09:00 - 09:20)
Salvatore Levantino
Polytechnic Univ. of Milan
Joseph Cali
BAE Systems, Inc.
Location
204A
Abstract
This session will present the most recent advances on phase noise filtering and fractional-N frequency synthesis, showing novel digital calibration techniques to achieve low fractional spur levels and low phase noise performance.
Technical Papers
Abstract
RMo1C-1: A 15.6–18.2GHz Digital Bang-Bang PLL with -63dBc In-Band Fractional Spur
Dmytro Cherniak, Luigi Grimaldi, Fabio Padovan, Matteo Bassi, Roberto Nonis, Carlo Samori, Salvatore Levantino
Dmytro Cherniak, Politecnico di Milano
(08:00 - 08:20)
Abstract
RMo1C-2: A 14nm FinFET Sub-Picosecond Jitter Fractional-N Ring PLL for 5G Wireless Communication
Seungjin Kim, Byungki Han, Mingyu Cho, Seunghyun Oh, Jongwoo Lee, Thomas Byunghak Cho
Seungjin Kim, Samsung
(08:20 - 08:40)
Abstract
RMo1C-3: A 1.33mW, 1.6psrms-Integrated-Jitter, 1.8–2.7GHz Ring-Oscillator-Based Fractional-N Injection-Locked DPLL for Internet-of-Things Applications
Jiang Gong, Yuming He, Ao Ba, Yao-Hong Liu, Johan Dijkhuis, Stefano Traferro, Christian Bachmann, Kathleen Philips, Masoud Babaie
Jiang Gong, Holst Centre
(08:40 - 09:00)
Abstract
RMo1C-4: A 10GHz Digital Phase Noise Filter with 14dB Noise Suppression and -127dBc/Hz Noise Sensitivity at 1MHz Offset
Tongning Hu, Shilei Hao, Qun Jane Gu
Tongning Hu, Univ. of California, Davis
(09:00 - 09:20)
Abstract
RMo1C-5: A 5.5–7.3GHz Analog Fractional-N Sampling PLL in 28-nm CMOS with 75fsrms Jitter and -249.7dB FoM
Wanghua Wu, Chih-Wei Yao, Kunal Godbole, Ronghua Ni, Pei-Yuan Chiang, Yongping Han, Yongrong Zuo, Ashutosh Verma, Ivan Siu-chuang Lu, Sang Won Son, Thomas Byunghak Cho
Wanghua Wu, Samsung
(09:20 - 09:40)

-

Bodhisatwa Sadhu
IBM T.J. Watson Research Center
Stefano Pellerano
Intel Corp.
Location
201A
Abstract
The first paper presents a 28GHz 64/256-QAM phased array transceiver in 65nm CMOS. The next two papers present 16/64-QAM beamformers in 180nm SiGe BiCMOS. The final paper presents a 28GHz Chireix transmitter with on-antenna outphasing for 64-QAM applications implemented in 45nm SOI CMOS.
Technical Papers
Abstract
RMo2A-1: A 28GHz CMOS Phased-Array Transceiver Featuring Gain Invariance Based on LO Phase Shifting Architecture with 0.1-Degree Beam-Steering Resolution for 5G New Radio
Jian Pang, Rui Wu, Yun Wang, Masato Dome, Hisashi Kato, Hongye Huang, Aravind Tharayil Narayanan, Hanli Liu, Bangan Liu, Takeshi Nakamura, Takuya Fujimura, Masaru Kawabuchi, Ryo Kubozoe, Tsuyoshi Miura, Daiki Matsumoto, Naoki Oshima, Keiichi Motoi, Shinichi Hori, Kazuaki Kunihiro, Tomoya Kaneko, Kenichi Okada
Jian Pang, Tokyo Institute of Technology
(10:10 - 10:30)
Abstract
RMo2A-2: A Wideband High-Power Multi-Standard 23–31GHz 2×2 Quad Beamformer Chip in SiGe with >15dBm OP1dB Per Channel
Berktug Ustundag, Kerim Kibaroglu, Mustafa Sayginer, Gabriel M. Rebeiz
Kerim Kibaroglu, Univ. of California, San Diego
(10:30 - 10:50)
Abstract
RMo2A-3: A Dual-Polarized Dual-Beam 28GHz Beamformer Chip Demonstrating a 24Gbps 64-QAM 2×2 MIMO Link
Kerim Kibaroglu, Mustafa Sayginer, Ahmed Nafe, Gabriel M. Rebeiz
Kerim Kibaroglu, Univ. of California, San Diego
(10:50 - 11:10)
Abstract
RMo2A-4: A 28GHz Packaged Chireix Transmitter with Direct On-Antenna Outphasing Load Modulation Achieving 56%/38% PA Efficiency at Peak/6dB Back-Off Output Power
Sensen Li, Taiyun Chi, Huy Thong Nguyen, Tzu-Yuan Huang, Hua Wang
Sensen Li, Georgia Tech
(11:10 - 11:30)
Edward Preisler
TowerJazz
Alvin Joseph
GLOBALFOUNDRIES
Location
201B
Abstract
In this session, the optimization of semiconductor process technologies for RF applications will be discussed. The first two papers present practical ways to enhance the RF performance of standard digital CMOS offerings. The next paper concerns modeling of state-of-the-art GaN HEMT devices. Finally, a technology for enabling ultra-high frequency SAW filters will be described.
Technical Papers
Abstract
RMo2B-1: A 22nm FDSOI Technology Optimized for RF/mmWave Applications
S.N. Ong, S. Lehmann, W.H. Chow, C. Zhang, C. Schippel, L.H.K. Chan, Y. Andee, M. Hauschildt, K.K.S. Tan, J. Watts, C.K. Lim, A. Divay, Jen Shuang Wong, Z. Zhao, Madabusi Govindarajan, C. Schwan, A. Huschka, A. Bellaouar, W.L. Oo, J. Mazurier, C. Grass, R. Taylor, Kok Wai Johnny Chew, S. Embabi, G. Workman, A. Pakfar, S. Morvan, K. Sundaram, M.T. Lau, B. Rice, D. Harame
S.N. Ong, GLOBALFOUNDRIES
(10:10 - 10:30)
Abstract
RMo2B-2: fT Enhancement of CMOS Transistor Using Isolated Polysilicon Gates
Xi Sung Loo, Moe Z. Win, Kiat Seng Yeo
Xi Sung Loo, MIT
(10:30 - 10:50)
Abstract
RMo2B-3: A Small Signal AC Model Using Scalable Drain Current Equations of AlGaN/GaN MIS Enhancement HEMT
H. Aoki, H. Sakairi, N. Kuroda, Y. Nakamura, K. Chikamatsu, K. Nakahara
H. Sakairi, ROHM
(10:50 - 11:10)
Abstract
RMo2B-4: AlScN/Diamond Surface Acoustic Wave Resonators on Si Substrates with Frequency up to 33.7GHz
Lei Wang, Shuming Chen, Jinying Zhang, Jian Zhou, Jingting Luo
Lei Wang, NUDT
(11:10 - 11:30)
Yuxiang Zheng
FutureWei Technologies, Inc.
Fred Lee
Verily (Google) Life Sciences
Location
204A
Abstract
The first two papers cover mixed-signal digitization of wideband analog and RF signals. The first paper leverages a unique dual-loop, parasitic immune buffer to achieve 8GS/s time-interleaved SAR ADC with a competitive FOM, and the following paper covers a low power 16.2mW embedded filter sigma-delta RF to digital receiver architecture. The remaining two papers cover wireline transceiver techniques. The first presents a methodology for accurate DFE characterization in a timely manner. The final paper presents a 4Gbps isolated and low latency transceiver with an extended temperature range.
Technical Papers
Abstract
RMo2C-1: An 8.8-GS/s 8b Time-Interleaved SAR ADC with 50-dB SFDR Using Complementary Dual-Loop-Assisted Buffers in 28nm CMOS
X. Shawn Wang, Chi-Hang Chan, Jieqiong Du, Chien-Heng Wong, Yilei Li, Yuan Du, Yen-Cheng Kuan, Boyu Hu, Mau-Chung Frank Chang
X. Shawn Wang, Univ. of California, Los Angeles
(10:10 - 10:30)
Abstract
RMo2C-2: A Direct ΔΣ Receiver with Current-Mode Digitally-Synthesized Frequency-Translated RF Filtering
Sushil Subramanian, Hossein Hashemi
Sushil Subramanian, Univ. of Southern California
(10:30 - 10:50)
Abstract
RMo2C-3: A Methodology for Accurate DFE Characterization
Alireza Sharif-Bakhtiar, Anthony Chan Carusone
Anthony Chan Carusone, Univ. of Toronto
(10:50 - 11:10)
Abstract
RMo2C-4: A Flexible Low-Latency DC-to-4 Gbit/s Link Operating from -40 to +200°C in 28nm CMOS for Galvanically Isolated Applications
Simon Ooms, Patrick Reynaert
Simon Ooms, Katholieke Univ. Leuven
(11:10 - 11:30)

-

Ramesh Harjani
Univ. of Minnesota
Leon van den Oever
Qualcomm Technologies, Inc.
Location
201A
Abstract
This session addresses advances in RF front-ends for current and future wireless systems, and presents new developments on non-magnetic circulator designs, phased array and MIMO techniques to reduce interference and scan time, and transmit linearity enhancement.
Technical Papers
Abstract
RMo3A-1: Fully-Integrated Non-Magnetic 180nm SOI Circulator with >1W P1dB, >+50dBm IIP3 and High Isolation Across 1.85 VSWR
Aravind Nagulu, Andrea Alù, Harish Krishnaswamy
Aravind Nagulu, Columbia Univ.
(13:30 - 13:50)
Abstract
RMo3A-2: Full Duplex Circulator-Receiver Phased Array Employing Self-Interference Cancellation via Beamforming
Mahmood Baraani Dastjerdi, Negar Reiskarimian, Tingjun Chen, Gil Zussman, Harish Krishnaswamy
Mahmood Baraani Dastjerdi, Columbia Univ.
(13:50 - 14:10)
Abstract
RMo3A-3: Mixer-First MIMO Receiver with Multi-Port Impedance Tuning for Decoupling of Compact Antenna Systems
Charley Wilson III, Jacob Dean, Brian A. Floyd
Charley Wilson III, North Carolina State Univ.
(14:10 - 14:30)
Abstract
RMo3A-4: An 8-Element, 1–3GHz Direct Space-to-Information Converter for Rapid, Compressive-Sampling Direction-of-Arrival Finding Utilizing Pseudo-Random Antenna-Weight Modulation
Matthew Bajor, Tanbir Haque, Guoxiang Han, Ciyuan Zhang, John Wright, Peter R. Kinget
Matthew Bajor, Columbia Univ.
(14:30 - 14:50)
Abstract
RMo3A-5: An FDD/FD Capable, Single Antenna RF Front End from 800MHz to 1.2GHz with Baseband Harmonic Predistortion
Hazal Yüksel, Thomas Tapen, Zachariah Boynton, Emory Enroth, Alyssa Apsel, Alyosha C. Molnar
Hazal Yüksel, Cornell Univ.
(14:50 - 15:10)
Jeffrey Walling
Univ. of Utah
Debo Chowdhury
Broadcom Limited
Location
201B
Abstract
In this session, we feature four papers that leverage the power of digital processing to yield highly functional transmitters. The solutions range from digital transmitter front-ends that allow for direct digital beamforming, to transmitters with highly efficient power amplifiers.
Technical Papers
Abstract
RMo3B-1: A 1W Quadrature Class-G Switched-Capacitor Power Amplifier with Merged Cell Switching and Linearization Techniques
Si-Wook Yoo, Shih-Chang Hung, Sang-Min Yoo
Si-Wook Yoo, Michigan State Univ.
(13:30 - 13:50)
Abstract
RMo3B-2: A 0.19mm² 128mW 0.8–1.2GHz 2-Beam 8-Element Digital Direct to RF Beamforming Transmitter in 40nm CMOS
Boyi Zheng, John Bell, Yan He, Lu Jie, Michael P. Flynn
Boyi Zheng, Univ. of Michigan
(13:50 - 14:10)
Abstract
RMo3B-3: A Wide-Band Transmitter and Low-Noise PLL for a Highly Integrated 4T-4R-2F ZIF Transceiver in 28nm
P. Litmanen, S. Akhtar, S. Finocchiaro, F. Dantoni
S. Finocchiaro, Texas Instruments
(14:10 - 14:30)
Abstract
RMo3B-4: A 30-dBm Class-D Power Amplifier with On/Off Logic for an Integrated Tri-Phasing Transmitter in 28-nm CMOS
Mikko Martelius, Kari Stadius, Jerry Lemberg, Enrico Roverato, Tero Nieminen, Yury Antonov, Lauri Anttila, Mikko Valkama, Marko Kosunen, Jussi Ryynänen
Mikko Martelius, Aalto Univ.
(14:30 - 14:50)
Domine Leenaerts
NXP Semiconductors
Osama Shanaa
MediaTek, Inc.
Location
204A
Abstract
This session presents different integrated CMOS phase shifter and variable gain/attenuator circuits and architectures for cm/mm-wave phased arrays.
Technical Papers
Abstract
RMo3C-1: Ka-Band CMOS 360° Reflective-Type Phase Shifter with ±0.2dB Insertion Loss Variation Using Triple-Resonating Load and Dual-Voltage Control Techniques
Peng Gu, Dixian Zhao
Peng Gu, Southeast Univ.
(13:30 - 13:50)
Abstract
RMo3C-2: A 60GHz 360° Phase Shifter with 2.7° Phase Resolution and 1.4° RMS Phase Error in a 40-nm CMOS Technology
Bindi Wang, Hao Gao, M.K. Matters-Kammerer, Peter G.M. Baltus
Bindi Wang, Technische Universiteit Eindhoven
(13:50 - 14:10)
Abstract
RMo3C-3: Low-Loss and Small-Size 28GHz CMOS SPDT Switches Using Switched Inductor
Wonho Lee, Songcheol Hong
Wonho Lee, KAIST
(14:10 - 14:30)
Abstract
RMo3C-4: A Ka-Band CMOS Digital-Controlled Phase-Invariant Variable Gain Amplifier with 4-Bit Tuning Range and 0.5-dB Resolution
Yongran Yi, Dixian Zhao, Xiaohu You
Yongran Yi, Southeast Univ.
(14:30 - 14:50)
Abstract
RMo3C-5: A 5-Bit, 0.25dB Step Variable Attenuator at E-Band
Tyler N. Ross, Kimia T. Ansari, Sam Tiller, Morris Repeta
Tyler N. Ross, Huawei Technologies
(14:50 - 15:10)

-

Gernot Hueber
NXP Semiconductors
David Wentzloff
Univ. of Michigan
Location
201A
Abstract
This session includes ultra-low power radios and systems for IoT applications. Two papers focus on wireless security by addressing authentication and jamming attacks. A UWB ranging paper and a 802.15.4a UWB in 22nm FinFET are presented. A 5.8GHz WiFi wakeup receiver is presented leveraging harmonic-mixing to reduce power. Finally, a BLE transmitter is presenting using a ring-oscillator-based PLL.
Technical Papers
Abstract
RMo4A-1: A Secure TOF-Based Transceiver with Low Latency and Sub-cm Ranging for Mobile Authentication Applications
Haixin Song, Zhendong Ding, Woogeun Rhee, Zhihua Wang
Haixin Song, Tsinghua Univ.
(15:40 - 16:00)
Abstract
RMo4A-2: A 264-µW 802.15.4a-Compliant IR-UWB Transmitter in 22nm FinFET for Wireless Sensor Network Application
Brent R. Carlton, Stefano Pellerano, Farhana Sheikh, Divya Shree Vemparala, Ahmed Ali, V. Srinivasa Somayazulu
Renzhi Liu, Intel
(16:00 - 16:20)
Abstract
RMo4A-3: A 486µW All-Digital Bluetooth Low Energy Transmitter with Ring Oscillator Based ADPLL for IoT Applications
Xing Chen, Jacob Breiholz, Farah Yahya, Christopher Lukas, Hun-Seok Kim, Benton Calhoun, David D. Wentzloff
Xing Chen, Univ. of Michigan
(16:20 - 16:40)
Abstract
RMo4A-4: A 217µW -82dBm IEEE 802.11 Wi-Fi LP-WUR Using a 3rd-Harmonic Passive Mixer
Jaeho Im, Hun-Seok Kim, David D. Wentzloff
Jaeho Im, Univ. of Michigan
(16:40 - 17:00)
Abstract
RMo4A-5: Ultra-Fast Bit-Level Frequency-Hopping Transmitter for Securing Low-Power Wireless Devices
Rabia Tugce Yazicigil, Phillip Nadeau, Daniel Richman, Chiraag Juvekar, Kapil Vaidya, Anantha P. Chandrakasan
Rabia Tugce Yazicigil, MIT
(17:00 - 17:20)
Q. Jane Gu
Univ. of California, Davis
Mona Hella
Rensselaer Polytechnic Institute
Location
201B
Abstract
This session includes 5 papers on mm-wave transmitters and signal sources in silicon. It starts with Q-band transmitter for protected satellite communication with 0.5 Hz frequency resolution. There are three I/Q modulation based transmitters/modulator for communications: multi-state power amplifier based E-band transmitter, 40-100 GHz I/Q modulator and 120 GHz I/Q transmitter for wireless chip-to-chip communications. Finally, the session concludes with a wideband CMOS injection locking LO generation circuit.
Technical Papers
Abstract
RMo4B-1: Q-Band CMOS Transmitter System-on-Chip for Protected Satellite Communication
T. LaRocca, K. Thai, R. Snyder, R. Jai, O. Fordham, N. Daftari, B. Wu, Y. Yang, M. Watanabe
T. LaRocca, Northrop Grumman
(15:40 - 16:00)
Abstract
RMo4B-2: An E-Band QPSK Transmitter Element in 28-nm CMOS with Multistate Power Amplifier for Digitally-Modulated Phased Arrays
Nai-Chung Kuo, Ali M. Niknejad
Nai-Chung Kuo, Univ. of California, Berkeley
(16:00 - 16:20)
Abstract
RMo4B-3: A Low EVM SiGe BiCMOS 40–100GHz Direct Conversion IQ Modulator for Multi-Gbps Communications Systems
Qian Ma, Hyunchul Chung, Gabriel M. Rebeiz
Qian Ma, Univ. of California, San Diego
(16:20 - 16:40)
Abstract
RMo4B-4: A 120GHz I/Q Transmitter Front-End in a 40nm CMOS for Wireless Chip to Chip Communication
Chae Jun Lee, Seung Hun Kim, Hyuk Su Son, Dong Min Kang, Joon Hyung Kim, Chul Woo Byeon, Chul Soon Park
Seung Hun Kim, KAIST
(16:40 - 17:00)
Abstract
RMo4B-5: A 0.3-V 2.5-mW 154-to-195GHz CMOS Injection-Locked LO Generation with -186.5dB FoM
Xiaolong Liu, Howard C. Luong
Xiaolong Liu, HKUST
(17:00 - 17:20)
Foster Dai
Auburn Univ.
Ruonan Han
Massachusetts Institute of Technology
Location
204A
Abstract
This session focuses on highly-efficient, wide-tuning-range oscillators. Customized frequency generation targets applications, such as 5G communications, automotive radars and sub-THz imaging. The session covers a broad mm-wave spectrum, from 10GHz to 200GHz.
Technical Papers
Abstract
RMo4C-1: A -195dBc/Hz FoMT 20.8-to-28-GHz LC VCO with Transformer-Enhanced 30% Tuning Range in 65-nm CMOS
S. Lightbody, A.H.M. Shirazi, H. Djahanshahi, R. Zavari, S. Mirabbasi, S. Shekhar
S. Lightbody, Univ. of British Columbia
(15:40 - 16:00)
Abstract
RMo4C-2: A 31.8–40.8GHz Continuously Wide-Tuning VCO Based on Class-B Oscillator Using Single Varactor and Inductor
Jayol Lee, Dong-Woo Kang, Youngseok Baek, Bontae Koo
Jayol Lee, ETRI
(16:00 - 16:20)
Abstract
RMo4C-3: A Dual-Core 60GHz Push-Push VCO with Second Harmonic Extraction by Mode Separation
Vadim Issakov, Fabio Padovan
Vadim Issakov, Infineon Technologies
(16:20 - 16:40)
Abstract
RMo4C-4: A 200-GHz Sub-Harmonic Injection-Locked Oscillator with 0-dBm Output Power and 3.5% DC-to-RF-Efficiency
Songhui Li, David Fritsche, Corrado Carta, Frank Ellinger
Songhui Li, Technische Universität Dresden
(16:40 - 17:00)
Abstract
RMo4C-5: A 20.7–31.8GHz Dual-Mode Voltage Waveform-Shaping Oscillator with 195.8dBc/Hz FoMT in 28nm CMOS
Yiyang Shu, Huizhen Jenny Qian, Xun Luo
Yiyang Shu, UESTC
(17:00 - 17:20)

-

Margaret Szymanowski
NXP, USA, Inc.
Gary Hau
Qualcomm Technologies, Inc.
Location
201A
Abstract
This session will focus on high power, wideband mm-Wave PAs and demonstrate various circuit techniques to improve the performance such as harmonic tuning and device level optimization.
Technical Papers
Abstract
RTu1A-1: A Continuous-Mode 23.5–41GHz Hybrid Class-F/F-1 Power Amplifier with 46% Peak PAE for 5G Massive MIMO Applications
Tso-Wei Li, Hua Wang
Tso-Wei Li, Georgia Tech
(08:00 - 08:20)
Abstract
RTu1A-2: A Compact 75GHz PA with 26.3% PAE and 24GHz Bandwidth in 22nm FinFET CMOS
Steven Callender, Stefano Pellerano, Christopher Hull
Steven Callender, Intel
(08:20 - 08:40)
Abstract
RTu1A-3: A K-Band Power Amplifier with 26-dBm Output Power and 34% PAE with Novel Inductance-Based Neutralization in 90-nm CMOS
Wei-Cheng Huang, Jung-Lin Lin, Yu-Hsuan Lin, Huei Wang
Wei-Cheng Huang, National Taiwan Univ.
(08:40 - 09:00)
Abstract
RTu1A-4: A 14.8dBm 20.3dB Power Amplifier for D-Band Applications in 40nm CMOS
Dragan Simic, Patrick Reynaert
Dragan Simic, Katholieke Univ. Leuven
(09:00 - 09:20)
Abstract
RTu1A-5: A 31GHz 2-Stage Reconfigurable Balanced Power Amplifier with 32.6dB Power Gain, 25.5% PAEmax and 17.9dBm Psat in 28nm FD-SOI CMOS
Florent Torres, Magali De Matos, Andreia Cathelin, Eric Kerhervé
Florent Torres, STMicroelectronics
(09:20 - 09:40)
Hossein Hashemi
Univ. of Southern California
Vipul Jain
ANOKIWAVE
Location
201B
Abstract
This session covers submillimeter wave transmitters and receivers with on-chip antennas in advanced silicon technologies for communication and sensing applications. The papers include on-chip antenna arrays for terahertz radiation, chip-to-chip communication and pattern sensing.
Technical Papers
Abstract
RTu1B-1: A 410GHz OOK Transmitter in 28nm CMOS for Short Distance Chip-to-Chip Communications
Alexander Standaert, Patrick Reynaert
Alexander Standaert, Katholieke Univ. Leuven
(08:00 - 08:20)
Abstract
RTu1B-2: A 308–317GHz Source with 4.6mW Peak Radiated Power and On-Chip Frequency-Stabilization Feedback in 0.13µm BiCMOS
Chen Jiang, Mohammed Aseeri, Andreia Cathelin, Ehsan Afshari
Chen Jiang, Univ. of Michigan
(08:20 - 08:40)
Abstract
RTu1B-3: A 280GHz +9dBm TRP Dense 2D Multi Port Radiator in 65nm CMOS
Nadav Buadana, Samuel Jameson, Eran Socher
Nadav Buadana, Tel Aviv University
(08:40 - 09:00)
Abstract
RTu1B-4: Heterodyne Sensing CMOS Array with High Density and Large Scale: A 240-GHz, 32-Unit Receiver Using a De-Centralized Architecture
Zhi Hu, Cheng Wang, Ruonan Han
Zhi Hu, MIT
(09:00 - 09:20)
Abstract
RTu1B-5: Proximal-Field Radiation Sensors for Millimeter-Wave Integrated Radiators
Amirreza Safaripour, Bahar Asghari, Ali Hajimiri
Amirreza Safaripour, Caltech
(09:20 - 09:40)
Vito Giannini
UHNDER Inc
Pierre Busson
STMicroelectronics
Location
204A
Abstract
This session covers the latest innovation in integrated Radar and beamforming transceivers. We will begin with a pulse-width modulated Radar with improved accuracy, and move on with a paper on monitoring architectures for complying with automotive radar functional safety requirements and a paper detailing techniques for efficient sub-mmwave chirp generation. The session continues with a True-Time-Delay based chipset and a beamforming transceiver for 802.11ad-based fixed wireless access applications.
Technical Papers
Abstract
RTu1C-1: A 35GHz mm-Wave Pulse Radar with Pulse Width Modulated by SDM Realizing Sub-mm Resolution for 3D Imaging System
Shunli Ma, Jincheng Zhang, Tianxiang Wu, Junyan Ren
Shunli Ma, Fudan Univ.
(08:00 - 08:20)
Abstract
RTu1C-2: Monitoring Architecture for a 76–81GHz Radar Front End
Karthik Subburaj, Brian Ginsburg, Pankaj Gupta, Krishnanshu Dandu, Sreekiran Samala, Dan Breen, Karthik Ramasubramanian, Tim Davis, Zahir Parkar, Dheeraj Shetty, Rohit Chatterjee, Zeshan Ahmad, Neeraj Nayak, Meysam Moallem, Eunyoung Seok, Karan Bhatia, Shankar Ram Narayanamoorthy, Anjan Prasad Easwaran, Tom Altus, Sriram Murali, Vito Giannini, Indu Prathapan, Sachin Bharadwaj, Sumeer Bhatara, Venkatesh Srinivasan, Sai Gunaranjan, Sundarrajan Rangachari
Karthik Subburaj, Texas Instruments
(08:20 - 08:40)
Abstract
RTu1C-3: A 151-to-173GHz FMCW Transmitter Achieving 14dBm Psat with Synchronized Injection-Locked Power Amplifiers and Five In-Phase Power Combining Doublers in 65nm CMOS
Shunli Ma, Tianxiang Wu, Jincheng Zhang, Junyan Ren
Shunli Ma, Fudan Univ.
(08:40 - 09:00)
Abstract
RTu1C-4: A True Time Delay-Based SiGe Bi-Directional T/R Chipset for Large-Scale Wideband Timed Array Antennas
Moon-Kyu Cho, Ickhyun Song, John D. Cressler
Moon-Kyu Cho, Georgia Tech
(09:00 - 09:20)
Abstract
RTu1C-5: A 57–71GHz Beamforming SiGe Transceiver for 802.11ad-Based Fixed Wireless Access
Erik Öjefors, Mikael Andreasson, Torgil Kjellberg, Håkan Berg, Lars Aspemyr, Richard Nilsson, Klas Brink, Robin Dahlbäck, Dapeng Wu, Kristoffer Sjögren, Mats Carlsson
Erik Öjefors, Sivers IMA
(09:20 - 09:40)

-

Kamran Entesari
Texas A&M Univ.
Danilo Manstretta
Univ. of Pavia
Location
201A
Abstract
This session presents state-of-the-art mm-wave LNAs in advanced technologies (RFSOI, FinFET and SiGe BiCMOS) and advanced RF receiver front-ends with enhanced channel-selectivity using passive mixer-first architecture and low-power phase tracking using sub-harmonic mixing.
Technical Papers
Abstract
RTu2A-1: A 4.7mW W-Band LNA with 4.2dB NF and 12dB Gain Using Drain to Gate Feedback in 45nm CMOS RFSOI Technology
Li Gao, Qian Ma, Gabriel M. Rebeiz
Li Gao, Univ. of California, San Diego
(10:10 - 10:30)
Abstract
RTu2A-2: A Compact 75GHz LNA with 20dB Gain and 4dB Noise Figure in 22nm FinFET CMOS Technology
Woorim Shin, Steven Callender, Stefano Pellerano, Christopher Hull
Woorim Shin, Intel
(10:30 - 10:50)
Abstract
RTu2A-3: A 29–37GHz BiCMOS Low-Noise Amplifier with 28.5dB Peak Gain and 3.1–4.1dB NF
Zhe Chen, Hao Gao, Domine Leenaerts, Dusan Milosevic, Peter G.M. Baltus
Zhe Chen, Technische Universiteit Eindhoven
(10:50 - 11:10)
Abstract
RTu2A-4: Circuit Techniques for Enhanced Channel Selectivity in Passive Mixer-First Receivers
Edward C. Szoka, Alyosha C. Molnar
Edward C. Szoka, Cornell Univ.
(11:10 - 11:30)
Abstract
RTu2A-5: A 750µW -88dBm-Sensitivity CMOS Sub-Harmonic Phase-Tracking Receiver
Bingwei Jiang, Howard C. Luong
Bingwei Jiang, HKUST
(11:30 - 11:50)
Magnus Wiklund
Qualcomm, Inc.
Yuan-Hung Chung
MediaTek, Inc.
Location
201B
Abstract
This session showcases recent efforts in transceiver and transmitter designs for connectivity and cellular applications. It includes two papers on transceiver architectures, one for LTE with spurious mitigation and another paper for WiFi/BT RF combo with reconfigurable front-end design. On the transmitter side, there are three papers including a low-power polar architecture and linearity enhancement techniques.
Technical Papers
Abstract
RTu2B-1: A 28nm CMOS Wireless Connectivity Combo IC with a Reconfigurable 2×2 MIMO WiFi Supporting 80+80MHz 256-QAM, and BT 5.0
Chia-Hsin Wu, Chris Hunter, Jongdae Bae, Huijung Kim, Jisoo Chang, Jacob Sharpe, Inhyo Ryu, Seongwon Joo, Byeongwan Ha, Won Ko, Jounghyun Yim, Sangwook Han, Taewan Kim, Daeyoung Yoon, Inyoung Choi, Sangyun Lee, Qing Liu, Myounggyun Kim, Jiyoung Lee, Shinwoong Kim, Alexander Thoukydides, Michael Cowell, Thomas Byunghak Cho
Chia-Hsin Wu, Samsung
(10:10 - 10:30)
Abstract
RTu2B-2: An Asymmetrical Parallel-Combined Cascode CMOS WiFi 5GHz 802.11ac RF Power Amplifier
Sergey Anderson, Nadav Snir
Sergey Anderson, DSP Group
(10:30 - 10:50)
Abstract
RTu2B-3: A 0.62nJ/b Multi-Standard WiFi/BLE Wideband Digital Polar TX with Dynamic FM Correction and AM Alias Suppression for IoT Applications
Ao Ba, Johan van den Heuvel, Paul Mateman, Cui Zhou, Benjamin Busze, Minyoung Song, Yuming He, Ming Ding, Johan Dijkhuis, Evgenii Tiurin, Suryasarman Madampu, Pepijn Boer, Stefano Traferro, Yan Zhang, Yao-Hong Liu, Christian Bachmann, Kathleen Philips
Yao-Hong Liu, Holst Centre
(10:50 - 11:10)
Abstract
RTu2B-4: A Wideband Transmitter for LTE-A HPUE Using CIM3 Cancellation
Yangjian Chen, Arnaud Werquin, Mohammed Hassan, Christophe Beghein, Bernard Tenbroek, Jon Strange, Chi-Tsan Chen, Tzung-Han Wu, Yen-Horng Chen, Chinq-Shiun Chiu
Yangjian Chen, MediaTek
(11:10 - 11:30)
Abstract
RTu2B-5: A 40nm 4-Downlink and 2-Uplink RF Transceiver Supporting LTE-Advanced Carrier Aggregation
Tzung-Han Wu, Yuan-Yu Fu, Sheng-Che Tseng, Ying-Tsang Lu, Yangjian Chen, Chien-Shan Chiang, Zong-You Li, Bo-Yu Lin, Min-Hua Wu, Jui-Chih Kao, Tzu-Yu Yeh, Li-Shin Lai, Chao-Wei Wang, Chih-Hao Eric Sun, Yen-Horng Chen, Chinq-Shiun Chiu, Shih-Chieh Yen, Guang-Kaai Dehng, George Chien, Bernard Tenbroek
Chinq-Shiun Chiu, MediaTek
(11:30 - 11:50)

-

Ranjit Gharpurey
Univ. of Texas at Austin
Mohyee Mikhemar
Broadcom Limited
Location
Exhibit Hall
Technical Papers
Abstract
RTuIF1-1: Power Amplifier with Temperature Adaptive Biasing for Improved DEVM
Hamza Najjari, Christophe Cordier, Stéphane David, Serge Bardy, Jean-Baptiste Begueret
Hamza Najjari, IMS (UMR 5218)
Abstract
RTuIF1-2: A 150µW -57.5dBm-Sensitivity Bluetooth Low-Energy Back-Channel Receiver with LO Frequency Hopping
Abdullah Alghaihab, Hun-Seok Kim, David D. Wentzloff
Abdullah Alghaihab, Univ. of Michigan
Abstract
RTuIF1-3: A 12.46µW Baseband Timing Circuitry for Synchronization and Duty-Cycling of Scalable Wireless Mesh Networks in IoT
Enkhbayasgalan Gantsog, Ivan Bukreyev, Frank Lane, Alyssa Apsel
Ivan Bukreyev, Cornell Univ.
Abstract
RTuIF1-4: An Analog Wide-Bandwidth Baseband Chain for 12Gbps 256QAM Direct-Conversion Receiver
B. Jalali, M. Moretto, A. Singh, S. Shahramian, Y. Baeyens
B. Jalali, Acacia Communications
Abstract
RTuIF1-5: A Blocker-Tolerant Double Noise-Cancelling Wideband Receiver Front-End Using Linearized Transconductor
Duksoo Kim, Sangwook Nam
Duksoo Kim, Seoul National Univ.
Abstract
RTuIF1-6: A 10.56-GHz Broadband Transceiver with Integrated T/R Switching via Matching Network Re-Use in 28-nm CMOS Technology
Wei Zhu, Lei Zhang, Yan Wang
Wei Zhu, Tsinghua Univ.
Abstract
RTuIF1-7: A Gradient Descent Bias Optimizer for Oscillator Phase Noise Reduction Demonstrated in 45nm and 32nm SOI CMOS
Mark Ferriss, Bodhisatwa Sadhu, Daniel Friedman
Bodhisatwa Sadhu, IBM T.J. Watson Research Center
Abstract
RTuIF1-8: Truly Balanced K-Band Push-Push Frequency Doubler
Soenke Vehring, Georg Boeck
Soenke Vehring, Technische Universität Berlin
Abstract
RTuIF1-9: A Crosstalk-Immune Sub-THz All-Surface-Wave I/O Transceiver in 65-nm CMOS
Yuan Liang, Chirn Chye Boon, Hao Yu
Yuan Liang, Nanyang Technological Univ.
Abstract
RTuIF1-10: 300GHz OOK Transmitter Integrated in Advanced Silicon Photonics Technology and Achieving 20Gb/s
E. Lacombe, C. Belem-Goncalves, C. Luxey, F. Gianesello, C. Durand, D. Gloria, G. Ducournau
E. Lacombe, STMicroelectronics
Abstract
RTuIF1-11: A 2.56Gbps Asynchronous Serial Transceiver with Embedded 80Mbps Secondary Data Transmission Capability in 65nm CMOS
Xiaoran Wang, Tianwei Liu, Shita Guo, Mitchell A. Thornton, Ping Gui
Xiaoran Wang, Southern Methodist Univ.