IMS and RFIC Technical Sessions

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Kamal Samanta, Caglar Ozdag
AMWT LTD, IBM Research
Location
204
Abstract

As the world rapidly embraces Artificial Intelligence (AI) and Machine Learning (ML) across various industries, the key question arises: how can we best leverage AI/ML to transform our own field? This workshop addresses this critical question by highlighting cutting-edge research from industry and academia experts who are using AI to transform microwave design. With new techniques emerging at an unprecedented pace, the workshop will shine a light on their revolutionary potential in RF and microwave engineering. The focus is on how AI is streamlining design processes, optimising results and enhancing productivity, ultimately helping engineers to navigate increasingly complex challenges in ways that were previously not possible. Our six distinguished speakers, all pioneers in their respective areas, will present a comprehensive view of AI’s role in advancing the entire spectrum of microwave engineering, including topics such as device modeling (including GaN PA), component synthesis (together with inductor, transformer and other passives), circuit (including RFIC and MMICs) and system design, performance optimisation (like PA linearisation) and electronic design automation (EDA) covering RF to THz frequencies. Attendees will gain valuable insights into how AI/ML is reshaping the future of microwave engineering, providing the tools and perspectives needed to stay ahead and empowering innovation and realisation of advanced devices to highly integrated modules/systems, enabling applications for 5G, 6G and beyond.

Technical Papers
Abstract
WSC-1: State-of-the-Art Microwave Device Modeling Enabled by Artificial Intelligence and Machine Learning
Jianjun Xu
Jianjun Xu, Keysight Technologies
Keysight Technologies
(08:00 - 11:50)
Abstract
WSC-2: Physics-Informed Machine Learning-Based Digital Predistortion of RF Power Amplifiers
Tao Yu
Tao Yu, Analog Devices
Analog Devices
(08:00 - 11:50)
Abstract
WSC-3: AI/ML Techniques Supporting the Design Automation of RF/mm-Wave Devices and Circuits
Fábio Passos
Fábio Passos, Instituto Superior Técnico
Instituto Superior Técnico
(08:00 - 11:50)
Abstract
WSC-4: AI-Enabled Discovery of New RF/mm-Wave Architectures and Synthesis of End-to-End RFICs
Kaushik Sengupta
Kaushik Sengupta, Princeton Univ.
Princeton Univ.
(08:00 - 11:50)
Abstract
WSC-5: AI-Based Algorithms in Analog Circuit Topology Generation and Beyond
Xin Zhang
Xin Zhang, IBM
IBM
(08:00 - 11:50)
Abstract
WSC-6: AI/ML for Microwave Modeling and Optimization
Qi-Jun Zhang
Qi-Jun Zhang, Carleton Univ.
Carleton Univ.
(08:00 - 11:50)
Ethan Lin
TMY Technology
Location
206
Abstract

This half-day workshop titled "Integrating FR2 OAI and Hybrid RIS: Enhanced Network Management implementing FR2 OAI, ORAN, MIMO, and RIS" is designed to address the rapidly evolving technical landscape of mm-wave (FR2) OpenAirInterface (OAI) technology and network deployment with Dynamic RIS. The workshop will showcase cutting-edge developments in FR2 OAI, including its integration with ORAN architecture, and applications in ISAC and MIMO, as well as network deployment. Participants will benefit from presentations by experts who will share insights on innovative solutions and tools that enable advanced beamforming, intelligent RAN control, and efficient resource allocation in high-frequency networks.

Technical Papers
Abstract
WSE-1: Integrating FR2 OAI and Hybrid RIS: Enhanced Network Management Implementing FR2 OAI, ORAN, and RIS
Ethan Lin
Ethan Lin, TMY Technology
TMY Technology
(08:00 - 11:50)
Abstract
WSE-2: Implementation of an Open-Source 5G SA FR2 End-to-End Testbed with the USRP
Neel Pandeya
Neel Pandeya, National Instruments
National Instruments
(08:00 - 11:50)
Abstract
WSE-3: ISaC Designs and Applications for Physiological Motion Monitoring
Yao Zheng
Yao Zheng, University of Hawai`i at Mānoa
University of Hawai`i at Mānoa
(08:00 - 11:50)
Kevin Tien, Duane Howard
IBM Quantum, Amazon
Location
308
Abstract

The development of quantum computing shows no sign of slowing down, with multiple major players in the field recently announcing impressive achievements and aggressive roadmaps towards the deployment of quantum computers able to solve impactful problems for society. Though research and improvement of the core qubit technologies and the quantum processor units (QPUs) themselves have generally dominated the discourse in the quantum computing community, the engineering challenge of actually delivering complete scaled quantum computers with a full-fledged control/interaction framework is gaining increased attention as industrial and academic teams demonstrate qubit counts that push the envelope for I/O. This is especially problematic for technologies which require cryogenic environments, such as the popular superconducting qubit family, as a significant burden is incurred in trying to deliver necessary signals from room temperature through cabling down into the cryogenic environment itself. As proposed qubit counts on roadmaps increases beyond the 5000-physical-qubit mark, it is clear that interconnects will pose a massive challenge for the community. Though cryogenic electronics can help alleviate this, it does not resolve the fundamental problem of intra-fridge wiring towards the QPU proper. This half-day workshop collects academic and industrial speakers with deep expertise in this problem for discussions of the state-of-the-art in signal delivery, both for precision measurements and at scale. Attendees will be able to interact with experts to understand both the current best practices, but also hear about the bottlenecks and opportunities for innovative solutions from the broader microwave community.

Technical Papers
Abstract
WSN-1: High-Density Wiring and Signal Conditioning for Scaled Quantum Computers
Damon Russell
Damon Russell, Amazon
Amazon
(08:00 - 11:50)
Abstract
WSN-2: Generators, Receivers, and Signal Delivery in Large-Scale Superconducting Quantum Computing Systems
Daniil Frolov
Daniil Frolov, IBM Quantum
IBM Quantum
(08:00 - 11:50)
Abstract
WSN-3: High-Density RF Solutions for Scaled Quantum Computing
Ozlem Sen
Ozlem Sen, Maybell Quantum
Maybell Quantum
(08:00 - 11:50)
Abstract
WSN-4: Interconnect Challenges for Scalable Quantum Computing
Bob Buckley
Bob Buckley, Google
Google
(08:00 - 11:50)
Abstract
WSN-5: Noise Measurement Challenges in Cryogenic Systems
Leo Belostotski
Leo Belostotski, Univ. of Calgary
Univ. of Calgary
(08:00 - 11:50)

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Wanghua Wu, Ahmed Elkholy, Teerachot Siriburanon, Salvatore Finocchiaro
Samsung, Broadcom, Univ. College Dublin, Qorvo
Location
201
Abstract

Frequency synthesizers are among the most critical blocks in wireless, wireline, and digital clocking applications. This workshop will cover both the fundamentals and the latest advances in frequency synthesis circuits and systems to efficiently generate LO signals with low phase noise, low spurious tones, and large modulation bandwidth. Prior-art techniques will be discussed in-depth, such as energy-efficient reference clocks, high-FOM wide-tuning range VCOs and DCOs, DPLL fundamentals, modern low-jitter fractional-N PLLs. Special attention will also be given to pulling and spur mitigation techniques, and injection-locked frequency multipliers. The workshop will be concluded by exploring FMCW generation for high-performance automotive radars.

Technical Papers
Abstract
WSA-1: Reference Oscillator Architectures and Design Considerations
Danielle Griffith
Danielle Griffith, Texas Instruments
Texas Instruments
(08:00 - 17:20)
Abstract
WSA-2: Beyond All-Digital PLL for RF and mm-Wave Frequency Synthesis
Robert Bogdan Staszewski
Robert Bogdan Staszewski, Univ. College Dublin
Univ. College Dublin
(08:00 - 17:20)
Abstract
WSA-3: Spur Analysis and Mitigation Techniques for Fractional Synthesizer
Michael Peter Kennedy
Michael Peter Kennedy, Univ. College Dublin
Univ. College Dublin
(08:00 - 17:20)
Abstract
WSA-4: Calibration-Free DSM Noise Suppression in Analog Frequency Synthesizers
Dihang Yang
Dihang Yang, Broadcom
Broadcom
(08:00 - 17:20)
Abstract
WSA-5: Design of a Low-Jitter Ring-Oscillator-Based Fractional-N Digital PLL
Jaehyouk Choi
Jaehyouk Choi, Seoul National Univ.
Seoul National Univ.
(08:00 - 17:20)
Abstract
WSA-6: (Voltage-Controlled) Oscillators with Ultra-Low Phase Noise
Andrea Mazzanti
Andrea Mazzanti, Università di Pavia
Università di Pavia
(08:00 - 17:20)
Abstract
WSA-7: Design and Performance Characterization of PLL-Based Chirp Generators for FMCW Radar Applications
Pratap Tumkur Renukaswamy
Pratap Tumkur Renukaswamy, IMEC
IMEC
(08:00 - 17:20)
Alberto Valdes-Garcia, Yahya Tousi, Oren Eliezer
IBM Research, Univ. of Minnesota, Samsung
Location
203
Abstract

Integrated communication and sensing capabilities are on a strong trajectory to become an integral part of the next generation of wireless systems. While the exploration of these techniques started decades ago, their development has accelerated with the increasing availability of highly integrated Si-based transceivers, baseband compute capabilities, and wireless testbeds for experimentation, and more recently AI. Nevertheless, the development of wireless systems with efficient joint communication and sensing capabilities remains a challenging multi-disciplinary task where EM, circuit design, signal processing, and ML techniques are relevant. The goal of this workshop is to bring together a set of active researchers on these topics to share their vision and expertise and enhance the cross-disciplinary awareness and understanding between the RFIC and systems communities. The speakers span academic and industrial research institutions from across the globe and the presentations will cover circuit, algorithm, and application aspects.

Technical Papers
Abstract
WSB-1: Integrating Sensing Functionality in Mobile Communication Networks
Henrik Holter
Henrik Holter, Ericsson
Ericsson
(08:00 - 17:20)
Abstract
WSB-2: Applying State-of-the-Art mm-Wave Communication Technologies for 5G, SATCOM and WiGig to Sensing Applications
Tumay Kanar
Tumay Kanar, Renesas
Renesas
(08:00 - 17:20)
Abstract
WSB-3: Toward Integrated mm-Wave Communication and Sensing with Compressive Beam Shaping Techniques
Yasaman Ghasempour
Yasaman Ghasempour, Princeton Univ.
Princeton Univ.
(08:00 - 17:20)
Abstract
WSB-4: Sensing with mm-Wave 5G: Extracting Spatial Information Leveraging Directional Beams
Alexandra Gallyas-Sanhueza
Alexandra Gallyas-Sanhueza, IBM Research
IBM Research
(08:00 - 17:20)
Abstract
WSB-5: Joint Sensing and Communication Under Hardware Impairments
Nuria González-Prelcic
Nuria González-Prelcic, Univ. of California, San Diego
Univ. of California, San Diego
(08:00 - 17:20)
Abstract
WSB-6: Broadband mm-Wave ICs for Joint Sensing and Communication Across 30–100GHz
Kaushik Sengupta
Kaushik Sengupta, Princeton Univ.
Princeton Univ.
(08:00 - 17:20)
Abstract
WSB-7: Adaptive mm-Wave MIMO Front-Ends for Energy-Efficient Sensing
James F. Buckwalter
James F. Buckwalter, Univ. of California, Santa Barbara
Univ. of California, Santa Barbara
(08:00 - 17:20)
Andreia Cathelin, Yann Deval
STMicroelectronics, Univ. of Bordeaux
Location
205
Abstract

The workshop will delve into the design of ultra-low and low-power RF integrated circuits, emphasizing various applications where energy efficiency is paramount. This is particularly relevant within the Internet of Things (IoT) domain, which spans multiple application fields. Given that power consumption is a critical concern for all battery-powered or always-on applications, the workshop will comprehensively address this issue.

The workshop will commence with two presentations focusing on Silicon technologies optimized for such applications, specifically FD-SOI, FinFET, and emerging technologies such as gate-all-around nanoribbon transistors. Following this, two additional presentations will explore the trade-offs associated with the most power-intensive components, namely the frequency synthesis unit and power amplifiers.

The subsequent four presentations will concentrate on architectural innovations pertinent to low and ultra-low power RFIC solutions. This segment will begin with discussions on novel sensor interface solutions, such as event-driven operation systems. The final three presentations will address comprehensive system solutions designed for wireless environments, achieving power consumption down to sub-microWatt levels, and secure biomedical applications.

Technical Papers
Abstract
WSD-1: Leading-edge Process Technologies for Efficient Low-power Systems
Rami Said
Rami Said, Intel Corp.
Intel Corp.
(08:00 - 17:20)
Abstract
WSD-2: FD-SOI: game changer in the IoT arena
Andreia Cathelin
Andreia Cathelin, STMicroelectronics
STMicroelectronics
(08:00 - 17:20)
Abstract
WSD-3: Design Methodologies for Low-Power Frequency Synthesizers
Asad Abidi
Asad Abidi, Univ. of California, Los Angeles
Univ. of California, Los Angeles
(08:00 - 17:20)
Abstract
WSD-4: Digital-PA: Ubiquitous from Low-to-High Power
Jeff Walling
Jeff Walling, Virginia Polytechnic Institute and State Univ.
Virginia Polytechnic Institute and State Univ.
(08:00 - 17:20)
Abstract
WSD-5: Potential of event-driven continuous-time digital signal processing for ultra-low-power applications
Antoine Frappé
Antoine Frappé, Univ. of Lille
Univ. of Lille
(08:00 - 17:20)
Abstract
WSD-6: Next-Gen End-Point Radios down to sub-µW – Enabling Ubiquitous and Friction-Less Immersion in Existing Wireless Environments
Massimo Allioto
Massimo Allioto, National Univ. of Singapore
National Univ. of Singapore
(08:00 - 17:20)
Abstract
WSD-7: Body Area Network – Connecting and Powering Things Together Around the Human Body
Jerald Yoo
Jerald Yoo, Seoul National Univ.
Seoul National Univ.
(08:00 - 17:20)
Abstract
WSD-8: Living Networks: Bioelectronic IoT and the Future of Secure, Energy-Efficient Wireless Systems
Rabia Yazicigil
Rabia Yazicigil, Boston Univ.
Boston Univ.
(08:00 - 17:20)
Hao Gao, Didier Belot, Yun Fang
Technische Universiteit Eindhoven, STMicroelectronics, Southeast Univ.
Location
207
Abstract

With rapid technological advances, the scope of communication systems is expanding significantly. Among the most groundbreaking developments are the use of mm-wave and sub-THz frequencies, which are poised to revolutionize wireless communication by unlocking unprecedented capabilities. This workshop will explore the transformative potential of mm-wave and sub-THz technologies, covering the frequency range from 30GHz to 300GHz. Once underutilized, these high-frequency ranges are now pivotal to major technological breakthroughs. Central to this advancement is the broadband front-end, which is crucial for effectively harnessing these frequencies for cutting-edge applications. A major focus of the workshop is the advancement of high-frequency communication technologies. Attendees will examine innovations in ultra-fast data transfer, low-latency networks, and the integration of mm-wave and sub-THz frequencies within wireless systems. These advances are reshaping connectivity, supporting the rollout of 5.5G and 6G networks, enhancing autonomous vehicles, and enabling smart cities. The workshop will also highlight the potential of 5.5G and 6G technologies to transform various industries. Additionally, the integration of Reconfigurable Intelligent Surfaces (RIS) and Radio-over-Fiber (RoF) technologies will be discussed, showcasing their critical roles in optimizing signal quality and extending network reach in the evolving landscape of 5.5G and beyond.

Technical Papers
Abstract
WSF-1: Wideband TTD Reflectarrays for Multi-Standard 5G/6G Systems
Gabriel M. Rebeiz
Gabriel M. Rebeiz, Univ. of California, San Diego
Univ. of California, San Diego
(08:00 - 17:20)
Abstract
WSF-2: mm-Wave and Sub-THz CMOS Front-Ends for 6G
Kenichi Okada
Kenichi Okada, Tokyo Tech
Tokyo Tech
(08:00 - 17:20)
Abstract
WSF-3: Challenging CMOS with Beamforming in the D-Band
Yang Zhang, Piet Wambacq
Yang Zhang, IMEC
IMEC, IMEC
(08:00 - 17:20)
Abstract
WSF-4: Vision on Phased Arrays Using Meta-Surfaces and on the Implementation of LO Phase Shifting Based on ILOs
José-Luis Gonzalez-Jimenez
José-Luis Gonzalez-Jimenez, CEA-LETI
CEA-LETI
(08:00 - 17:20)
Abstract
WSF-5: Navigating the Challenges of 300GHz CMOS Transceivers: A Comparative Analysis with Photonics-Based and D-Band CMOS Configurations
Minoru Fujishima
Minoru Fujishima, Hiroshima Univ.
Hiroshima Univ.
(08:00 - 17:20)
Abstract
WSF-6: Multi-Layer Adaptive Hybrid Beamformers for Multi-Standard and Full-Duplex MIMO Communication
Susnata Mondal
Susnata Mondal, Intel
Intel
(08:00 - 17:20)
Abstract
WSF-7: Mixed-Signal RFIC in SiGe:C BiCMOS for mm-Wave Antenna-in-Package and Antenna-in-Module Solutions
Andrea Pallotta, Didier Belot
Andrea Pallotta, STMicroelectronics
STMicroelectronics, STMicroelectronics
(08:00 - 17:20)
Abstract
WSF-8: 5.5G and its Revolution to the 6G
Rui Hou
Rui Hou, Ericsson
Ericsson
(08:00 - 17:20)
Abstract
WSF-9: Phased Array in mm-Wave and Sub-THz for Communication and Sensing
Yun Fang, Hao Gao
Yun Fang, Southeast Univ., Hao Gao, Technische Universiteit Eindhoven
Southeast Univ., Technische Universiteit Eindhoven
(08:00 - 17:20)
Didier Belot, Pierre Busson, Salvatore Finocchiaro
STMicroelectronics, Qorvo
Location
208
Abstract

In the context of 6G and beyond, the performance demands are geared towards massive parallelization. For instance, the Non-Terrestrial-Network (NTN) is an essential component of future 6G wireless systems, and the next-generation SATCOM network will play an enabling role to support 6G NTN. High throughput, capacity, and low latency, and beamformed wireless links are the key success factors for NTN. Most existing SATCOM terminals, either on the ground or on the satellite payload, require large-sized phased array systems with 1024 elements or more per array. Such massive parallelization results in significant challenges not only in terms of integration density, but also on calibration and practical operation; a particularly challenging task in SATCOM-on-the-Move (SOTM) systems that necessitate fast beam forming and tracking. In this WS we will have an overview of potential process/circuit/system solutions addressing these challenges.

Technical Papers
Abstract
WSG-1: Ku- and Ka-Band Beamformer with Antenna Arrays
Hua Wang, Thomas Burger, Tzu-Yuan Huang
Hua Wang, ETH Zürich
ETH Zürich, ETH Zürich, ETH Zürich
(08:00 - 17:20)
Abstract
WSG-2: Multi-Orbit SATCOM Terminals for NTN and the Components that Make These Viable
Kevin Greene, Salvatore Finocchiaro, Nitin Jain, Ryan Jennings
Kevin Greene, Qorvo
Qorvo, Qorvo, Qorvo, Qorvo
(08:00 - 17:20)
Abstract
WSG-3: SiGe BiCMOS Process for SATCOM Applications
Pascal Chevalier, Frederic Gianesello, Vincent Knopik
Frederic Gianesello, STMicroelectronics
STMicroelectronics, STMicroelectronics, STMicroelectronics
(08:00 - 17:20)
Abstract
WSG-4: Building Large-Volume SATCOM Phased Arrays Using Silicon
Gabriel M. Rebeiz
Gabriel M. Rebeiz, Univ. of California, San Diego
Univ. of California, San Diego
(08:00 - 17:20)
Abstract
WSG-5: Ka-Band CMOS TX-RX for SATCOM
Kenichi Okada
Kenichi Okada, Tokyo Tech
Tokyo Tech
(08:00 - 17:20)
Abstract
WSG-6: InGaAs LNAs for SATCOM
Fabian Thome
Fabian Thome, Fraunhofer IAF
Fraunhofer IAF
(08:00 - 17:20)
Abstract
WSG-7: SiGe LNA for SATCOM
Benjamin Blampey, Baudouin Martineau
Benjamin Blampey, CEA-LETI
CEA-LETI, CEA-LETI
(08:00 - 17:20)
Abstract
WSG-8: Low-Cost Silicon Beamformers in Ku and Ka Band Powering SATCOM User-Terminals
Naveen Yanduru
Naveen Yanduru, Renesas
Renesas
(08:00 - 17:20)
Abstract
WSG-9: Bringing Commercial Cellular Access to Space
Jeff Massman
Jeff Massman, Analog Devices
Analog Devices
(08:00 - 17:20)
Salvatore Finocchiaro, Yu Cao
Qorvo
Location
210
Abstract

The ever-increasing demand for high-throughput communication links and high-resolution radar sensors is driving the development of future wireless systems at higher operating frequencies. In order to support multiple functionality, the flexibility requested to those systems, is driving the adoption of large phased array antennas and complex System-in-Package (SiP) Bit-to-RF or Optical-to-RF solutions. Heterogeneous technologies and vertical 3D integration will play a vital role in enhancing the performance and functional density, along with reducing the size and costs, of such RF systems. 3DHI will pose a new set of technology (processes and substrates), design (MMICS, RFIC, analog, power management, passives), packaging and thermal challenges, which will be addressed by renowned experts from Academia and Industry in this workshop.

Technical Papers
Abstract
WSH-1: Packaging: Then, Now and in the Future
Dev Palmer
Dev Palmer, CHIPS for America
CHIPS for America
(08:00 - 17:20)
Abstract
WSH-2: The Defense Advanced Research Projects Agency’s (DARPA) Next Generation Microelectronics Manufacturing (NGMM) Program
Michael Holmes
Michael Holmes, DARPA
DARPA
(08:00 - 17:20)
Abstract
WSH-3: 3D Heterogenous Integration (3DHI) for Advanced Communications
Madhavan Swaminathan
Madhavan Swaminathan, Penn State University
Penn State University
(08:00 - 17:20)
Abstract
WSH-4: Glass-Based Packaging for Bits-to-RF and 3DHI Systems-in-Package
Jeb Flemming
Jeb Flemming, 3DGS
3DGS
(08:00 - 17:20)
Abstract
WSH-5: Bits to Beams: How do You Simulate a Heterogeneously Packaged, Digitally Steered Phased Array?
Paul Mosinkskis
Paul Mosinkskis, Cadence
Cadence
(08:00 - 17:20)
Abstract
WSH-6: Waferscale RF Silicon Interposer Packaging Technology for mm-Wave Phased Arrays and Radars
Siddhartha Sinha
Siddhartha Sinha, IMEC
IMEC
(08:00 - 17:20)
Abstract
WSH-7: Development of Co-Packaged Optics Technology for Photonics Applications
Tarak Railkar
Tarak Railkar, Qorvo
Qorvo
(08:00 - 17:20)
Abstract
WSH-8: Advances in Wafer-Level Packaging (WLP) and Heterogeneous Integration for mm-Wave Phased Arrays
Dino Ferizovic
Dino Ferizovic, Northrop Grumman
Northrop Grumman
(08:00 - 17:20)
Abstract
WSH-9: TBD
Muhannad S. Bakir
Georgia Tech
(08:00 - 17:20)
Abstract
WSH-10: Progress in Commercial Realization of mm-Wave Heterogeneous Circuits
Dan Green
Dan Green, PseudolithIC
PseudolithIC
(08:00 - 17:20)
Tong Zhang, Song Hu
Google, Apple
Location
211
Abstract

This workshop will focus on self-interference cancellation techniques and implementations in Analog/RF, Digital, and ML domains for radar, full duplex, and frequency division duplex radio systems.

Technical Papers
Abstract
WSI-1: Lab-to-Fab Transition of CMOS Simultaneous Transmit and Receive (STAR) Research
Harish Krishnaswamy
Harish Krishnaswamy, Columbia Univ.
Columbia Univ.
(08:00 - 17:20)
Abstract
WSI-2: Transceiver Techniques for FDD and Full-Duplex Wireless
Emanuel Cohen
Emanuel Cohen, Technion
Technion
(08:00 - 17:20)
Abstract
WSI-3: Integrated Self-Interference Cancellers at RF for Communication and Radar
Arun Natarajan
Arun Natarajan, Oregon State Univ.
Oregon State Univ.
(08:00 - 17:20)
Abstract
WSI-4: Self-Interference Cancellation Techniques in Frequency Division Duplexing Receiver Front-Ends
Danilo Manstretta
Danilo Manstretta, Università di Pavia
Università di Pavia
(08:00 - 17:20)
Abstract
WSI-5: GHz to Sub-THz In-Band Full-Duplex Operations in CMOS Based on Wave Frequency and Mode Conversions
Ruonan Han
Ruonan Han, MIT
MIT
(08:00 - 17:20)
Abstract
WSI-6: Antenna Interfaces with Built-In Self-Interference Cancellation for Future Communication and Sensing Systems
Negar Reiskarimian
Negar Reiskarimian, MIT
MIT
(08:00 - 17:20)
Abstract
WSI-7: Opportunities and Challenges on the Next Generation Concurrent Reconfigurable Multi-Radio IoT Devices
Sai-Wang Rocco Tam
Sai-Wang Rocco Tam, NXP Semiconductors
NXP Semiconductors
(08:00 - 17:20)
Abstract
WSI-8: Integrated Self-Interference Cancelers for Fully-Duplex Radios
Aravind Nagulu
Aravind Nagulu, Northeastern University
Northeastern University
(08:00 - 17:20)
Abstract
WSI-9: Intelligent Self-Interference Mitigation for Integrated Radios
Jacques C. Rudell
Jacques C. Rudell, Univ. of Washington
Univ. of Washington
(08:00 - 17:20)
Alexandre Giry, Jennifer Kitchen
CEA-LETI, Arizona State Univ.
Location
215
Abstract

As the demand for high-speed wireless communication continues to grow, efficient PA design becomes critical for supporting modern communications network infrastructure, especially in the sub-20GHz spectrum (FR1 and FR3 bands). This workshop will delve into comprehensive design and development of power amplifiers (PAs) for sub-20GHz base station applications. The latest processes and technologies will be covered, focusing on semiconductor advances that drive power handling, linearity, and efficiency. Participants will explore theory and modeling principles to predict performance and optimize PA designs for various operational scenarios. The session will also emphasize architecture and design techniques, addressing key challenges such as linearity, efficiency, and bandwidth. Finally, the workshop will cover module design and integration, where participants will learn about packaging considerations and thermal management to ensure optimal performance in real-world deployments. This workshop is ideal for RF engineers, circuit designers, and researchers aiming to enhance their expertise in cutting-edge PA technology for wireless infrastructure. Participants will gain an in-depth understanding of key PA architecture and design techniques through interactive sessions with practical case studies.

Technical Papers
Abstract
WSJ-1: Gallium Nitride on Silicon Carbide Technologies for Sub-20GHz Applications
Kimon Vivien
Kimon Vivien, UMS
UMS
(08:00 - 17:20)
Abstract
WSJ-2: From Component Modeling for Circuit Design to Circuit Modeling for System Design
Wissam Saabe
Wissam Saabe, AMCAD Engineering
AMCAD Engineering
(08:00 - 17:20)
Abstract
WSJ-3: Understanding the Harmonic Balance Simulation Technique for use in the Waveform Engineering of Advanced GaN Power Amplifiers
Damon Holmes
Damon Holmes, Macom
Macom
(08:00 - 17:20)
Abstract
WSJ-4: Load-Modulated PA Architecture Comparison Using Non-Linear Embedding
Patrick Roblin, Dominic Mikrut
Patrick Roblin, The Ohio State University
The Ohio State University, The Ohio State University
(08:00 - 17:20)
Abstract
WSJ-5: Antenna-VSWR-Resilient Load-Modulated Balanced Amplifier (LMBA) for Massive MIMO Communications
Kenle Chen
Kenle Chen, Univ. of Central Florida
Univ. of Central Florida
(08:00 - 17:20)
Abstract
WSJ-6: How to Ensure Flexible and Efficient Use of Spectrum, from Advanced 5G Doherty Power Amplifiers to Digitally Assisted Wideband PA for 6G BTS
Emmanuel Gatard, Peter Abdelmalak, Stéphane Dellier, Shuichi Sakata, Takuma Torii, Shintaro Shinjo
Stéphane Dellier, Wupatec, Shuichi Sakata, Mitsubishi Electric
Wupatec, Wupatec, Wupatec, Mitsubishi Electric, Mitsubishi Electric, Mitsubishi Electric
(08:00 - 17:20)
Abstract
WSJ-7: A Fully Integrated Power Amplifier Module with Bias Controller to Tackle 5G mMIMO Basestation Applications at 3.5GHz
Stephan Maroldt
Stephan Maroldt, Ampleon
Ampleon
(08:00 - 17:20)
Abstract
WSJ-8: PA and Transmitter Architectural and Process Developments to Support Next-G Wireless Infrastructure (TBC)
Gavin Smith, Geoff Tucker, Matt Green
Gavin Smith, Richardson RFPD
Richardson RFPD, NXP Semiconductors, NXP Semiconductors
(08:00 - 17:20)
Xiaobang Shang, Jeffrey Hesler
NPL, Virginia Diodes
Location
305/309
Abstract

This workshop provides an opportunity for presenters to share their work in addressing the challenges of unlocking the potential of the THz spectrum for future wireless communications and radar sensing applications. The presenters come from diverse backgrounds — including instrumentation manufacturing, metrology institutes, industry, and academia — offering a wide range of perspectives. Topics covered in this workshop include THz electronics, novel integration approaches for THz systems, interconnections and packaging technologies, photonics-based THz generation for communications, on-chip and waveguide antennas, design and characterization of high electron mobility transistors, and recent advances in testing and measurements up to 1THz and beyond.

Technical Papers
Abstract
WSK-1: THz Integrated Circuits Beyond 500GHz: Challenges and Opportunities
Jae-Sung Rieh
Jae-Sung Rieh, Korea Univ.
Korea Univ.
(08:00 - 17:20)
Abstract
WSK-2: Substrateless Platform: A Promising Route to THz Integration
Withawat Withayachumnankul
Withawat Withayachumnankul, Univ. of Adelaide
Univ. of Adelaide
(08:00 - 17:20)
Abstract
WSK-3: Photonics-Based THz Generation for THz Communication Testing and System-Level Demonstrations
Guillaume Ducournau
Guillaume Ducournau, Université de Lille
Université de Lille
(08:00 - 17:20)
Abstract
WSK-4: THz Semiconductor Electronics
Jan Stake
Jan Stake, Chalmers Univ. of Technology
Chalmers Univ. of Technology
(08:00 - 17:20)
Abstract
WSK-5: BiCMOS Interconnections and Wafer-Level Packaging Technologies for Sub-THz Communication and Sensing Applications
Matthias Wietstruck
Matthias Wietstruck, IHP
IHP
(08:00 - 17:20)
Abstract
WSK-6: THz Electronics for Sensing and Communication Applications
Chun-Hsing Li
Chun-Hsing Li, National Taiwan Univ.
National Taiwan Univ.
(08:00 - 17:20)
Abstract
WSK-7: Antennas and Packaging for a Sub-THz Wireless Point-to-Multipoint Link
Akanksha Bhutani
Akanksha Bhutani, KIT
KIT
(08:00 - 17:20)
Abstract
WSK-8: Characterization and Modeling of HEMTs Beyond 110GHz
Chong Li
Chong Li, Univ. of Glasgow
Univ. of Glasgow
(08:00 - 17:20)
Abstract
WSK-9: Trends in mm-Wave and THz Test Equipment
Jeffrey Hesler
Jeffrey Hesler, Virginia Diodes
Virginia Diodes
(08:00 - 17:20)
Abstract
WSK-10: Non-Contact On-Wafer Probing for mm-Wave and THz Metrology
Kubilay Sertel
Kubilay Sertel, The Ohio State University
The Ohio State University
(08:00 - 17:20)
Abstract
WSK-11: On-Wafer Measurement of Planar Circuits at mm-Wave and Sub-THz Frequencies
Xiaobang Shang
Xiaobang Shang, NPL
NPL
(08:00 - 17:20)
Aritra Banerjee, Susnata Mondal
Univ. of Illinois at Chicago, Intel
Location
306
Abstract

The power amplifier is one of the most critical blocks in the transceiver and obtaining the desired performance from the PA at sub-THz frequencies remains a challenge. At sub-THz frequencies, transistors suffer from reduced gain impacting the performance of the PA. Designing sub-THz PAs with improved power added efficiency (PAE), output power, and linearity is an active area of research. SiGe and III-V technologies such as InP and GaN demonstrate higher fT and fmax than CMOS and as a result, sub-THz PAs designed in these technologies outperform their CMOS-based counterparts. On the other hand, CMOS can achieve better yield and higher level of integration compared to III-V technologies. In this workshop, the speakers will present recent developments in sub-THz PA design in CMOS, SiGe, and III-V technologies demonstrating their comparisons and trade-offs.

Technical Papers
Abstract
WSL-1: InP HBT Technologies for Sub-THz Amplifiers
Miguel Urteaga
Miguel Urteaga, Teledyne Scientific & Imaging
Teledyne Scientific & Imaging
(08:00 - 17:20)
Abstract
WSL-2: 100–300GHz Power Amplifiers: Transistor Limits, Circuit Topologies
Mark Rodwell, Amirreza Alizadeh, Ahmed Samir Sayed Ahmed, Yuya Nemoto, Utku Soylu, Miguel Urteaga
Mark Rodwell, Univ. of California, Santa Barbara
Univ. of California, Santa Barbara, Keysight Technologies, Cairo Univ., Univ. of California, Santa Barbara, Univ. of California, Santa Barbara, Teledyne Scientific & Imaging
(08:00 - 17:20)
Abstract
WSL-3: Transformer-Based mm-Wave PA Design in CMOS, InP and GaAs
Patrick Reynaert
Patrick Reynaert, KU Leuven
KU Leuven
(08:00 - 17:20)
Abstract
WSL-4: High-Power and Highly Efficient Power Amplifiers for D-Band Applications in Silicon
Omeed Momeni
Omeed Momeni, Univ. of California, Davis
Univ. of California, Davis
(08:00 - 17:20)
Abstract
WSL-5: Design Methodology for Sub-THz Power Amplifier and its Application to 6G D-Band in Advanced CMOS and BiCMOS Technologies
Nathalie Deltimple, Antoine Lhomel, Francois Rivet
Nathalie Deltimple, IMS (UMR 5218)
IMS (UMR 5218), IMS (UMR 5218), Université de Bordeaux
(08:00 - 17:20)
Abstract
WSL-6: E- and D-Band Common-Base Power Amplifiers in SiGe-BiCMOS with Performance Enhanced by Current Clamping and Device Stacking
Andrea Bilato, Andrea Mazzanti
Andrea Bilato, Università di Pavia
Università di Pavia, Università di Pavia
(08:00 - 17:20)
Abstract
WSL-7: Sub-THz SiGe HBT Cascode Power Amplifiers with Capacitive Feedback and its Use in a Supply Modulated RF Transmitter Front-End
Suprovo Ghosh, Haidong Guo, Kenneth K. O
Suprovo Ghosh, Texas Instruments
Texas Instruments, ams-OSRAM, Univ. of Texas at Dallas
(08:00 - 17:20)
Abstract
WSL-8: Stacked-FET CMOS Power Amplifier for mm-Wave and Sub-THz Applications
Kyunghwan Kim
Kyunghwan Kim, Samsung
Samsung
(08:00 - 17:20)
Abstract
WSL-9: Sub-THz PA
Andrea Arias-Purdue
Andrea Arias-Purdue, HRL Laboratories
HRL Laboratories
(08:00 - 17:20)
Bahar Jalali Farahani, Mahdi Parvizi
Cisco Systems
Location
307
Abstract

According to Global Market Insights Inc., the optical communication and networking market is expected to grow at a compound annual growth rate (CAGR) of 8.6% from 2024 to 2031, reaching $61.92 billion by 2031. The significant revenue comes from emerging technologies such as IoT (Internet of Things), machine-to-machine networks, AI, cloud-based services, and web-based applications. Driven by this demand, many innovations are underway to enhance optical communication systems. In this full-day workshop, we will learn about the latest advancements in the field of wireless and wireline optical networks.
The morning session of this workshop covers four talks on OWC (Optical Wireless Communication) and applications for Free Space Optics. The afternoon session focuses on wireline optical communication systems, with some talks elaborating on the circuit design techniques for high-speed transceivers.

Technical Papers
Abstract
WSM-1: VLC/LiFi for NextG Wireless
Hany Elgala
Hany Elgala, University at Albany (UAlbany) - State University of New York (SUNY)
University at Albany (UAlbany) - State University of New York (SUNY)
(08:00 - 17:20)
Abstract
WSM-2: 6G Optical Wireless Networks
Michael Crisp
Michael Crisp, Univ. of Cambridge
Univ. of Cambridge
(08:00 - 17:20)
Abstract
WSM-3: Photonics: The Key to Building Commercial Quantum Computers
Hossein Hodaei
Hossein Hodaei, PsiQuantum
PsiQuantum
(08:00 - 17:20)
Abstract
WSM-4: Will Light Communication be the coming 6G?
Farid Bichareh
Farid Bichareh, AASA Inc.
AASA Inc.
(08:00 - 17:20)
Abstract
WSM-5: Future of optical and wireline transceiver
Cathy Liu
Cathy Liu, Broadcom
Broadcom
(08:00 - 17:20)
Abstract
WSM-6: Sub-pJ/bit Optical Connectivity for AI Clusters
Keren Bergman
Keren Bergman, Columbia
Columbia
(08:00 - 17:20)
Abstract
WSM-7: In-Package Silicon Photonic Transceivers for Next-Gen AI/HPC Systems
Ganesh Balamurugan
Ganesh Balamurugan, Celestial AI
Celestial AI
(08:00 - 17:20)
Sorin P. Voinigescu, Vadim Issakov
Univ. of Toronto, Technische Univ. Braunschweig
Location
310-312
Abstract

This workshop will cover the latest industry developments and research trends in the design, large volume manufacturing, and characterization of superconducting, ion-trap, and semiconductor spin qubits along with the associated quantum processor architectures. We will start with a systematic and comprehensive comparison of the different qubit families, RF hardware realization challenges and their unique features. Presentations will also delve into cryogenic modeling, packaging, on-die small-signal and noise measurements and calibration at microwave and mm-wave frequencies of CMOS and SiGe HBT technologies needed in the control and readout electronics of these qubit families. We will end with the latest examples of such cryogenic control and readout circuits.

Technical Papers
Abstract
WSO-1: Superconducting Qubits: Wiring up Quantum Entanglement
Irfan Siddiqi
Irfan Siddiqi, Univ. of California, Berkeley
Univ. of California, Berkeley
(08:00 - 17:20)
Abstract
WSO-2: Progress in Control Electronics for Scalable Trapped-Ion Quantum Computing
Jules Stuart
Jules Stuart, IonQ
IonQ
(08:00 - 17:20)
Abstract
WSO-3: Circuit Design for Large-Scale Trapped Ions
Jae-Yoon Sim
Jae-Yoon Sim, POSTECH
POSTECH
(08:00 - 17:20)
Abstract
WSO-4: Design, Modeling and Control of Spin Silicon Qubits: from Confinement to Characterization
Elena Blokhina
Elena Blokhina, Univ. College Dublin
Univ. College Dublin
(08:00 - 17:20)
Abstract
WSO-5: High Throughput Manufacturing and Testing of Semiconductor Spin Qubit Quantum Processors
Pierre-André Mortemousque
Pierre-André Mortemousque, CEA-LETI
CEA-LETI
(08:00 - 17:20)
Abstract
WSO-6: SiGe HBT Compact Modeling for Circuit Design at Cryogenic Temperatures
Michael Schröter
Michael Schröter, Technische Universität Dresden
Technische Universität Dresden
(08:00 - 17:20)
Abstract
WSO-7: MOSFET Modeling with the sEKV Model for the Design of Cryo-CMOS Circuits
Christian Enz
Christian Enz, EPFL
EPFL
(08:00 - 17:20)
Abstract
WSO-8: On-Wafer LNA Noise Measurements for Cryogenic LNAs
Joseph Bardin
Joseph Bardin, UMass Amherst
UMass Amherst
(08:00 - 17:20)
Abstract
WSO-9: FDSOI Platform for Quantum Computing
Tristan Meunier
Tristan Meunier, Quobly
Quobly
(08:00 - 17:20)
Abstract
WSO-10: Engineering Quantum Computers for the FTQC Era: A Little About a Lot!
Imran Bashir
Imran Bashir, Equal1
Equal1
(08:00 - 17:20)
Abstract
WSO-11: Progress in Cryogenic Circuits for Superconducting Qubit-Based Quantum Computing
Daniel Friedman
Daniel Friedman, IBM T.J. Watson Research Center
IBM T.J. Watson Research Center
(08:00 - 17:20)

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Shahriar Shahramian
Bell Labs
Location
212-214
Abstract

Abstract:
Advancements in instrumentation and metrology over the past decade have been extraordinary, blurring the boundaries between measurement domains. We rely on these tools as windows into reality, yet the increasing complexity of measurement setups, abstraction of instrument functions, and limited user experience (often) result in erroneous characterizations. Faulty measurements not only risk reputational damage within the scientific community but can also lead to costly failures, potentially causing millions of dollars in losses during productization. This lecture celebrates the ingenuity of modern test equipment while also highlighting their limitations and the challenges of accurate DUT characterization.

Biography:
Shahriar Shahramian (SM ’06) received his Ph.D. degree from University of Toronto in 2010 where he focused on the design of mm-wave data converters and transceivers. Shahriar has been with the Bell Laboratories – Nokia since 2009 and is currently the Lab Leader (Director) of the RFIC & Packaging Research Lab. His research focus includes the design of mm-wave wireless and wireline integrated circuits and systems. Shahriar is a Bell Labs Fellow and leads the design and architecture of several state-of-the-art ASICs for optical coherent and wireless backhaul products. Shahriar has served as the chair mm-Wave & THz subcommittee of IEEE BCICTS & mm-Wave SoCs at IEEE RFIC and member of the technical program committee IEEE ISSCC. He has also served as the guest Editor of the IEEE Journal of Solid-State Circuits (JSSC).

Shahriar has been the recipient of Ontario Graduate Scholarship & University of Toronto Fellowship, and the best paper award at the CSICS & Symposium in 2005, 2015 and RFIC Symposium in 2015, 2020, 2022 and ISSCC& in 2018. Shahriar is also the recipient of the IEEE MTT Young Engineer Award in 2020. He holds an Adjunct Associate Professor position at Columbia University, has received several teaching awards and is the founder and host of The Signal Path educational video series. Shahriar has also presented short courses and workshops at the IEEE CSICS, BCTM, BCICTS, RFIC/IMS and ISSCC conferences.

-

Travis Forbes, Subhanshu Gupta
Sandia National Laboratories, Washington State Univ.
Location
204
Abstract

While much of RFIC design works in the linear time invariant regime where blocks such as amplifiers provide a constant response during all time, linear time variant circuits bring time variance through clocking and/or mixing to enable significant performance advances. These advances are already showing promise in applications such as increased throughput in phased arrays, enabling full-duplex communication systems, and filtering of RF blockers for high bandwidth receivers. This workshop will bring together multiple research areas of linear periodic time variant (LPTV) circuit techniques from experts in industry and academia to provide attendees with both the theory of operation and the circuit and system implementation. Beginning with theory, the first talk will overview the theory of operation and analysis of LTV circuits with intuitive time-frequency domain analysis for mixing and filtering operations suited towards software-defined radios. The second talk will overview non-uniform sampling and engineering the clock to realize time-approximation filters for mixed-signal receiver implementations. The third talk will discuss sharp filtering through sampling aliases in LPTV filtering applications. The fourth talk will present advances in discrete-time true-time delay technologies and non-reciprocal components for use in full-duplex systems and circulators. The final talk will show significantly increased phased array throughput using joint phase and time array using an LPTV true-time delay as a key component. To end the workshop, we will bring the experts together for cross-pollination of ideas through a panel interaction with attendees.

Technical Papers
Abstract
WSP-1: Highly Linear Time-Variant Mixers/Filters: Operation and Analysis
Eric Klumperink
Eric Klumperink, Univ. of Twente
Univ. of Twente
(13:30 - 17:20)
Abstract
WSP-2: Advanced RFIC Techniques using Non-Uniform Sampling and Time-Approximation Filters
Mike Shuo-Wei Chen
Mike Shuo-Wei Chen, Univ. of Southern California
Univ. of Southern California
(13:30 - 17:20)
Abstract
WSP-3: Sharp Filtering using Sampling Aliases: Basics, Benefits, and Challenges
Sudhakar Pamarti
Sudhakar Pamarti, Univ. of California, Los Angeles
Univ. of California, Los Angeles
(13:30 - 17:20)
Abstract
WSP-4: Fully Integrated, Time-Varying Non-Reciprocal Components for RF and mm-Wave Systems
Aravind Nagulu
Aravind Nagulu, Northeastern University
Northeastern University
(13:30 - 17:20)
Abstract
WSP-5: Next Generation mm-Wave Technology: Beamforming with Joint Phase and Time Array
Gary Xu
Gary Xu, Samsung
Samsung
(13:30 - 17:20)
Charles Baylis, Matthew Ozalas
Baylor Univ., Keysight Technologies
Location
206
Abstract

Despite the automation of many processes in the engineering world, microwave circuit design still remains very much an "art" rather than a "science". However, recent developments in intelligent algorithms, artificial intelligence, and machine learning make the automation of microwave circuit design a potential breakthrough of epic proportions. The ability to automatically design circuits meeting goal specifications would allow improved designs and more efficient use of designer time. This workshop discusses facets of automated circuit design, including the motivation for automated microwave design, the limitations of artificial intelligence, how automation can be placed in the design workflow, and applications of automated design to different potential microwave application spaces. The workshop will conclude with a panel session of all speakers to discuss the way forward in microwave design automation.

Technical Papers
Abstract
WSQ-1: Audience Interaction: Challenges and Motivations for Microwave Design Automation
(13:30 - 17:20)
Abstract
WSQ-2: Applications and Benefits of Design Automation
Charles Baylis
Charles Baylis, Baylor Univ.
Baylor Univ.
(13:30 - 17:20)
Abstract
WSQ-3: What AI Algorithms Can Do, and What They Can’t
Robert J. Marks
Robert J. Marks, Baylor Univ.
Baylor Univ.
(13:30 - 17:20)
Abstract
WSQ-4: Automation in the Design Workflow
Matthew Ozalas
Matthew Ozalas, Keysight Technologies
Keysight Technologies
(13:30 - 17:20)
Abstract
WSQ-5: Accelerating High-Frequency Circuit Design Using Advanced AI Algorithms
Linda Katehi
Linda Katehi, Texas A&M Univ.
Texas A&M Univ.
(13:30 - 17:20)
Abstract
WSQ-6: Multi-Objective Visualization for Power Amplifier Design
Zoya Popović, Stefan Stroessner
Zoya Popović, University of Colorado Boulder
University of Colorado Boulder, University of Colorado Boulder
(13:30 - 17:20)
Abstract
WSQ-7: Harnessing AI for Unlocking Novel RF Designs with Enhanced Performances
Peng Wen Wong
Peng Wen Wong, FILPAL
FILPAL
(13:30 - 17:20)
Abstract
WSQ-8: Panel Session of Speakers: The Way Forward in Automated Microwave Design
(13:30 - 17:20)
Naoki Hasegawa
SoftBank
Location
308
Abstract

With the widespread use of mobile phones and smartphones, the contract for communication lines has shifted from being household-based to device-based. The wireless and mobile transformation of communication lines has improved communication speed and convenience, bringing significant changes to our society. However, electricity contracts remain at the household level and are limited to wired supply. The advancement of social implementation, such as DX (Digital Transformation), is predicted to significantly increase the number of sensors and IoT devices. In recent years, the development of 5G (fifth-generation mobile communication system) has aimed to establish a communication infrastructure capable of managing high volumes of traffic. However, significant challenges still persist regarding power supply methods for devices. To build a communication infrastructure capable of accommodating the increasing number of devices, wireless power supply methods to simplify battery replacement and charging are essential. This workshop focuses on research and development projects related to the integration of communication and power transmission. The requirements for research on the fusion of communication and power transmission include additive methods for incorporating wireless power transmission functionality into communication systems, power supply systems for communication purposes, mechanisms for simultaneous communication and power reception, device development for efficient conversion of radio waves into electrical energy, and the development of high-efficiency and cost-effective high-gain antennas. Wireless power transmission has recently been institutionalized in Japan and has begun commercial use. In the future, this theme will be of great importance in collaboration with Beyond-5G and 6G. The technologies presented in this session have the potential to significantly transform our energy utilization practices.

Technical Papers
Abstract
WSR-1: Combined System of Wireless Power Transfer and Communication
Yuta Nakamoto, Naoki Hasegawa
Yuta Nakamoto, SoftBank
SoftBank, SoftBank
(13:30 - 17:20)

-

Andreia Cathelin
STMicroelectronics
Xun Luo
Univ. of Electronic Science and Technology of China
Location
203
Abstract

This session focuses on advancements in mm-wave and RF digital transmitter and power amplification (PA) technologies, showcasing innovative designs across various CMOS nodes. The papers enhance system-level performance and integration for modern communication systems. The first paper introduces a mm-wave transmitter using a digital-to-phase converter (DPC) in 28nm CMOS. The second presents a mm-wave digital Cartesian transmitter with impedance-compensated RFDACs in 40nm CMOS. The third explores an RF digital PA with dynamic range pulse modulation in 22nm FD-SOI. The fourth introduces a UWB all-digital transmitter with hybrid FIR filtering in 28nm CMOS. The final paper presents a bits-to-RF digital transmitter with time-interleaved multi-subharmonic-switching DPAs in 65nm CMOS.

Technical Papers
Abstract
RMo1A-1: A 71-86GHz 1024QAM Direct-Carrier Phase-Modulating Transmitter with Digital-to-Phase Converters and Constant-Envelope Phasors
Jia Zhou, Chao-Jen Tien, Christopher Chen, Jieqiong Du, Jhih-Wei Chen, Arhison Bharathan, Adrian Tang, Sai-Wang Tam, Mau-Chung Chang
Jia Zhou, Univ. of California, Los Angeles
Univ. of California, Los Angeles, Univ. of California, Los Angeles, Univ. of California, Los Angeles, Univ. of California, Los Angeles, Univ. of California, Los Angeles, Univ. of California, Los Angeles, NASA’s Jet Propulsion Lab, NXP Semiconductors, Univ. of California, Los Angeles
(08:00 - 08:20)
Abstract
RMo1A-2: A 50-64GHz 21.4dBm, 20.6% SE Intrinsically Linear Digital Cartesian Transmitter with 6.5 Degree System AM-PM Distortion Using Impedance-Compensated RFDAC in 40-nm CMOS
Deshan Tang, Bingzheng Yang, Xun Luo
Deshan Tang, Univ. of Electronic Science and Technology of China
Univ. of Electronic Science and Technology of China, Univ. of Electronic Science and Technology of China, Univ. of Electronic Science and Technology of China
(08:20 - 08:40)
Abstract
RMo1A-4: An 802.15.4/4z-compliant UWB All-digital Transmitter with Hybrid FIR Filtering Achieving 47dBr Sidelobe Suppression
Ziying Huang, Wei Deng, Haikun Jia, Baoyong Chi
Ziying Huang, Tsinghua Univ.
Tsinghua Univ., Tsinghua Univ., Tsinghua Univ., Tsinghua Univ.
(08:40 - 09:00)
Abstract
RMo1A-5: Fully Integrated Optimal Modulation Bits-to-RF Digital Transmitter using Time-Interleaved Multi-Subharmonic-Switching DPA
Timur Zirtiloglu, Arman Tan, Basak Ozaydin, Ken Duffy, Muriel Medard, Rabia Tugce Yazicigil
Timur Zirtiloglu, Boston Univ.
Boston Univ., Boston Univ., Massachusetts Institute of Technology, Northeastern University, Massachusetts Institute of Technology, Boston Univ.
(09:00 - 09:20)
Kostas Doris
NXP Semiconductors
Aarno Parssinen
Univ. of Oulu
Location
205
Abstract

Low Earth orbit (LEO) satellites are unlocking new possibilities for high-speed communication systems, enabling commercial, multi-user, non-terrestrial networks. Phased arrays operating up to the mm-Wave range, with high power efficiency and circuit reutilization, form the foundation of these emerging systems, ensuring both extended range and high network capacity. Advances in antenna interface flexibility, including support for various polarizations, further enhance performance. This session features four papers showcasing the latest developments in circuits, transceivers, and antenna integration solutions for large arrays.

Technical Papers
Abstract
RMo1B-1: A 19GHz Circular Polarized 256-element CMOS Phased-Array Transmitter with 11W Average Power Consumption for LEO Satellite Terminal
Xiaolin Wang, Dongwon You, Xi Fu, Takeshi Ota, Michihiro Ide, Sena Kato, Jill Mayeda, Makoto Higaki, Jumpei Sudo, Hiroshi Takizawa, Masashi Shirakura, Takashi Tomura, Hiroyuki Sakai, Kazuaki Kunihiro, Kenichi Okada, Atsushi Shirane
Xiaolin Wang, Institute of Science Tokyo
Institute of Science Tokyo, Institute of Science Tokyo, Institute of Science Tokyo, Institute of Science Tokyo, Institute of Science Tokyo, Institute of Science Tokyo, Institute of Science Tokyo, Axelspace Corporation, Axelspace Corporation, Axelspace Corporation, Axelspace Corporation, Institute of Science Tokyo, Institute of Science Tokyo, Institute of Science Tokyo, Institute of Science Tokyo, Institute of Science Tokyo
(08:00 - 08:20)
Abstract
RMo1B-2: A Ka-Band 64-Element 4-Beam Polarization-Reconfigurable Phased Array Based on 65-nm CMOS Tx RFICs for SATCOM
Zixian Ma, Xinhong Xie, Huiyan Gao, Bing Lan, Nayu Li, Haotian Chen, Chunyi Song, Zhiwei Xu
Zixian Ma, Zhejiang Univ.
Zhejiang Univ., Zhejiang Univ., Georgia Institute of Technology, Zhejiang Univ., Donghai Laboratory, Zhejiang Univ., Donghai Laboratory, Zhejiang Univ.
(08:20 - 08:40)
Abstract
RMo1B-3: An 18-to-50 GHz 2-Element Phased-Array CMOS Transceiver with Dual-Resonator T/R Switch with Three-port Reconfigurable Network and Embedded Tunable Image Rejection Filter
Junlong Gong, Wei Deng, Fuyuan Zhao, Haikun Jia, Weiqi Zheng, Linjun Gu, Shulin Yao, Dongfang Li, Hongliang Wu, Baoyong Chi
Junlong Gong, Tsinghua Univ.
Tsinghua Univ., Tsinghua Univ., Tsinghua Univ., Tsinghua Univ., Tsinghua Univ., Tsinghua Univ., Tsinghua Univ., Tsinghua Univ., Tsinghua Univ., Tsinghua Univ.
(08:40 - 09:00)
Abstract
RMo1B-5: An 18–32-GHz Reconfigurable Multi-Beam Phased-Array Transceiver in 65-nm CMOS for Wideband Wireless Communications
Nayu Li, Botao Yang, Yiwei Liu, Zixian Ma, Xinhong Xie, Huiyan Gao, Shaogang Wang, Hang Lu, Bing Lan, Na Yan, Jane GU, Chunyi Song, Zhiwei Xu
Nayu Li, Donghai Laboratory
Donghai Laboratory, Zhejiang Univ., Zhejiang Univ., Zhejiang Univ., Zhejiang Univ., Zhejiang Univ., Zhejiang Univ., Zhejiang Univ., Zhejiang Univ., Fudan Univ., Georgia Institute of Technology, Zhejiang Univ., Zhejiang Univ.
(09:00 - 09:20)
Travis Forbes
Sandia National Laboratories
Justin Wu
AmLogic
Location
207
Abstract

This session presents mmWave advances in transceivers, filtering, and heterogeneous integration. Advances include mmWave frequency N path filtering using phase shifting in the signal path, a transceiver overcoming leakage and flicker noise for short range radar, heterogeneous integration of InP and CMOS for high linearity amplification and support circuits, and D-band radio-on-glass utilizing glass interposer for increased performance.

Technical Papers
Abstract
RMo1C-1: 35−65 GHz Quadrature-Balanced N-path Filter with a 0.1−0.9 GHz Tunable Bandwidth
Shimpei Yamashita, Yuki Tsukui, Yoshifumi Kawamura, Kazutomi Mori, Akihito Hirai
Shimpei Yamashita, Mitsubishi Electric Corp.
Mitsubishi Electric Corp., Mitsubishi Electric Engineering Co., Ltd., Mitsubishi Electric Corp., Mitsubishi Electric Corp., Mitsubishi Electric Corp.
(08:00 - 08:20)
Abstract
RMo1C-2: A 60 GHz Fully Integrated Low-IF CMOS Radar Transceiver with −6 dBm IP1dB and −14 to 5 dBm Power Control for Ultra-Short-Range Applications
Byeong-Taek Moon, Kyunghwan Kim, Jaeyeon Jeong, Goeun Baek, Doyoon Kim, Hongkie Lim, Junseong Kim, Minseob Lee, Seungyoon Jung, Kyungwoo Yoo, Taewoo Yu, Taeyeon Kim, Sungjoo Kim, Yoonki Lee, Woncheol Lee, Oren Eliezer, Hyun-Chul Park, Chan-Hong Park
Byeong-Taek Moon, Samsung Electronics
Samsung Electronics, Samsung Electronics, Samsung Electronics, Samsung Electronics, Samsung Electronics, Samsung Electronics, Samsung Electronics, Samsung Electronics, Samsung Electronics, Samsung Electronics, Samsung Electronics, Samsung Electronics, Samsung Electronics, Samsung Electronics, Samsung Electronics, Samsung Semiconductor, USA, Samsung, Samsung Electronics
(08:20 - 08:40)
Abstract
RMo1C-3: A CMOS-Enabled Heterogeneously-Integrated InP HEMT W-band LNA with 2.8-dB Noise Figure at 7.7-dB Gain and 4.5 mW PDC
Justin Kim, Alex Dinkelacker, Nicholas Vong, Michael Hodge, Matthew Tom, Bennett Coy, Mark Soler, Christopher Maxey, Florian Herrault, James Buckwalter
Justin Kim, PseudolithIC, Inc.
PseudolithIC, Inc., PseudolithIC, Inc., PseudolithIC, Inc., PseudolithIC, Inc., PseudolithIC, Inc., PseudolithIC, Inc., PseudolithIC, Inc., PseudolithIC, Inc., PseudolithIC, Inc., PseudolithIC, Inc.
(08:40 - 09:00)
Abstract
RMo1C-4: D-Band Radio-on-Glass Modules for Spectrally-Efficient FD & FDD Multi-Kilometer Wireless Backhaul Links
Shahriar Shahramian, Michael Holyoak, Mustafa Sayginer, Mike Zierdt, Chris Adams, Muhammad Waleed Mansha, Joe Weiner, Ayush Rai, Ismail Kartam, Yves Baeyens
Shahriar Shahramian, Nokia-Bell Labs
Nokia-Bell Labs, Nokia-Bell Labs, Nokia Bell Labs, Nokia-Bell Labs, Nokia Bell Labs, Nokia-Bell Labs, Nokia Bell Labs, Nokia-Bell Labs, Nokia, Nokia Bell Labs
(09:00 - 09:20)

-

Kamal Samanta, Paragkumar Thadesar
AMWT LTD, Qualcomm
Location
201
Abstract

In advanced mobile and wireless communication systems, including for sub-6GHz and mm-wave 5G and 6G, the integration and packaging of PA with other circuits has recently gained significant attention for enhancing electrical performances and achieving reduced size and integration cost. At the same time, in a front-end module (FEM), power amplifiers are considered the most expensive and critical component, dissipating high power within a compact space. PA’s thermal management and integration (considering electromagnetic interference) are crucial in achieving the required system performance with high reliability and repeatability. This workshop will focus on recent advances in PA design techniques, co-designing power amplifiers with other active (like, LNA, PS) and passive components (including filter, antennas) and integration, packaging, and thermal management techniques for realizing high-performance FEMs. It will present superior PA and FEM performance utilising advanced materials and techniques, including a diamond composite material compatible with II-V semiconductors and bond wires matching technique-based fully integrated PA. Furthermore, it will showcase wafer-level and chipset-based packaging of PA using silicon interposer and co-designing and integrating with passives and other RF (GaAs/GaN) and Si/CMOS circuits into a single substrate and demonstrating state-of-the-art output power and efficiency, enhancing integration and reducing manufacturing costs.

Technical Papers
Abstract
WMA-1: Advanced Techniques for 5G PA and Front-End Modules Packaging and Thermal Management
Florinel Balteanu
Florinel Balteanu, Skyworks
Skyworks
(08:00 - 11:50)
Abstract
WMA-2: Chipletization, RF Design and Thermal Modeling of mm-Wave InP Power Amplifiers and Modules
Siddhartha Sinha
Siddhartha Sinha, IMEC
IMEC
(08:00 - 11:50)
Abstract
WMA-3: The Role of Bondwire in Integrated Matching Networks in Power Amplifier Packaging
Steve Mung
Steve Mung, The Education University of Hong Kong
The Education University of Hong Kong
(08:00 - 11:50)
Abstract
WMA-4: Amplifiers with Multifunctionality and Integration on Internally Matched Wafer-Level-Package Using Silicon Interposer Technology
Yongchae Jeong
Yongchae Jeong, Jeonbuk National University
Jeonbuk National University
(08:00 - 11:50)
Abstract
WMA-5: Advanced Integration and Packaging Solutions for GaN and GaAs MMIC Power Amplifiers up to Q-Band
Mohammed Ayad
Mohammed Ayad, UMS
UMS
(08:00 - 11:50)
Abstract
WMA-6: Diamond-Metal Composite Package for High-Power RF Device
Quinn Martin
Quinn Martin, Macom
Macom
(08:00 - 11:50)
Fabian Thome, Mehmet Ogut
Fraunhofer IAF, Jet Propulsion Lab
Location
204
Abstract

The measurement of noise temperatures or noise figures of low-noise amplifiers and receivers is a key technique for a multitude of applications. Especially when talking about cutting-edge performance, eg for satellite-based systems at room temperature or quantum computing and radio astronomy at cryogenic temperatures, low-noise measurements become more and more challenging. While noise measurements are very often understood as straight forward, measurements at different ambient temperatures, operating frequencies, or input matching conditions are a major challenge so that low noise temperatures with a low uncertainty are difficult to maintain. This is especially true when the measured performance further improves and gets closer to physical limits. With applications such as array receivers or highly-scaled systems, such as astronomical interferometer or quantum computer, the increasing number of devices under test is a continuously growing requirement and will be addressed. In this workshop, we address several challenges and show state-of-the-art solutions for applications at room temperature and cryogenic conditions; best practices are discussed. This includes noise sources that are a key technology for the characterization and calibration of THz instrumentation ranging from amplifiers to radiometers. Therefore, the first talk will describe the development of noise sources, both diode and transistor based, with a focus on increasing ENR to enable a wide range of applications. In addition, the characterization methods and error analysis of the noise sources will be presented. The characterization of noise parameters is a key technique for device modeling and the assessment of different transistor technologies and devices. Thus, the second talk will focus on the characterization of noise parameters and corresponding conclusions. The following two talks discuss setups and challenges for cryogenic devices. The third talk describes a method for on-wafer noise temperature measurements of low-noise amplifiers using the cold-attenuator approach. Furthermore, a detailed analysis of the measurement uncertainty is presented. The fourth talk discusses an approach in measuring and qualifying cryogenic LNAs for their application in radio astronomical receivers. The basis of the presentation will be the activities for ALMA Band 2 1st stage LNA at W-Band. Here the main RF performance characteristics of effective noise temperature, full two-port s-parameters, amplitude and phase stability need to be verified at a cryogenic temperature of 15K and evaluated against specifications. Current and future projects in radio astronomy require a procedural approach in order to handle production volumes in the order of hundreds of cryogenic components. An increase of production volume is clearly foreseeable for the near future. This necessitates the use of automated processes for measurement and document generation. It is noteworthy that these activities often take place in research institutions, where, traditionally, many components used in cryogenic radio astronomy receivers are still developed, fabricated and tested. The learning and best practice of measurement setups in such demanding environments help also to improve the understanding in an even wider area of applications. Thus, developments, as discussed in this workshop, serve the entire IMS community.

Technical Papers
Abstract
WMB-1: Development and Characterization of Electronic-Based Noise Sources to 750GHz
Jeffrey Hesler
Jeffrey Hesler, Virginia Diodes
Virginia Diodes
(08:00 - 11:50)
Abstract
WMB-2: Noise Parameter Characterization of Microwave Active Devices vs. Size
Luciano Boglione
Luciano Boglione, Boeing
Boeing
(08:00 - 11:50)
Abstract
WMB-3: Cryogenic On-Wafer Noise Measurements Using a Cold-Attenuator Method
Felix Heinz
Felix Heinz, Fraunhofer IAF
Fraunhofer IAF
(08:00 - 11:50)
Abstract
WMB-4: Measurement and Qualification of RF Performance Characteristics of Cryogenic Low-Noise Amplifiers in the Context of Small Series Production
Patrick Pütz
Patrick Pütz, MPI for Radio Astronomy
MPI for Radio Astronomy
(08:00 - 11:50)
Rainee N. Simons
NASA Glenn
Location
206
Abstract

Over six decades of exploration of our solar system by robotic spacecraft has not only been one of the greatest adventures in history but has also transformed our understanding of the universe. Every mission has enabled stunning scientific discoveries that altered our knowledge of the universe. The breadth and depth of the discoveries from these robotic missions would not have been possible without the parallel development of a broad range of science instruments that operate over a wide range of wavelengths across the electromagnetic spectrum. These instruments provided the data to address key science questions and test scientific hypotheses. The focus of this workshop is the development of space borne and ground based sub-mm-wave and THz science instruments for exploring our universe and its origin, discovering and understanding planetary systems around nearby stars, and the cosmological parameters governing the evolution of the universe, etc. At present there are significant technological needs for improving existing instruments and adapting completely new concepts. Practically all instruments can benefit by technology developments that can reduce their mass and power consumption and improve data communications capability. Additionally, increased sensitivity and measurement accuracy are desired attributes along with survivability under extreme temperature/pressure in the ionizing radiation environment of space. Furthermore, autonomy is important given the enormous planetary distances that are involved. Accordingly, the workshop includes presentations from space agencies and organizations across the globe highlighting their instrument development successes and the missions that were enabled. The workshop commences with an overview talk that presents the developments leading up to the James Webb Space Telescope, the Nancy Grace Roman Space Telescope, and the Habitable Worlds Observatory operating in the far-infrared/THz regime (~30–300 microns / 1–10THz). The second presentation will review the history of superconducting THz detectors that are used and their status and prospects. In the third presentation, the development of superconductor-insulator-superconductor (SIS) receivers developed at the National Astronomical Observatory of Japan (NAOJ) for the Atacama Large Millimeter/Submillimeter Array (AL-MA) for operations at Band 4 (125–163GHz), Band 8 (385–500GHz), and band 10 (787–950GHz) will be presented. The fourth presentation will focus on the THz semiconductor Schottky junction used as a low noise, room temperature mixer for high spectral resolution THz observations. In particular, the 1.2THz front-end of the Submillimeter Wave Instrument (SWI) of the European Space Agency (ESA) Jupiter Icy Moon Explorer (JUICE) mission. The fifth presentation will describe a unique large-format 1.9THz heterodyne array using planar silicon micromachined package for high-resolution spectroscopy of interstellar clouds. The sixth presentation will describe the Herschel Heterodyne Instrument for the far-Infrared (HI-FI) for very high-resolution spectroscopy and the German Receiver for Astronomy at Terahertz Frequencies (GREAT) operated on the Stratospheric Observatory for Infrared Astronomy (SOFIA). The last talk will focus on big antennas in space and on ground to carry out astrophysical research.

Technical Papers
Abstract
WMC-1: The Context for and Future of THz Technologies in Space Astrophysics
Dominic Benford
Dominic Benford, NASA
NASA
(08:00 - 11:50)
Abstract
WMC-2: Superconducting Detectors for THz Space Astrophysics
Jonas Zmuidzinas
Jonas Zmuidzinas, Caltech
Caltech
(08:00 - 11:50)
Abstract
WMC-3: Development of Superconducting Receiver Technologies Supporting Radio Astronomy
Yoshinori Uzawa
Yoshinori Uzawa, National Astronomical Observatory of Japan
National Astronomical Observatory of Japan
(08:00 - 11:50)
Abstract
WMC-4: THz Heterodyne Receivers for the Study of Planet Atmospheres and Astrophysics Applications
Jeanne Treuttel
Jeanne Treuttel, Observatoire de Paris-PSL
Observatoire de Paris-PSL
(08:00 - 11:50)
Abstract
WMC-5: Towards Large-Format 1.9THz Heterodyne Arrays Using a Planar Silicon-Micromachined Package
Sven van Berkel
Sven van Berkel, Jet Propulsion Lab
Jet Propulsion Lab
(08:00 - 11:50)
Abstract
WMC-6: Solar System Observations in the Sub-mm-Wave Range
Paul Hartogh
Paul Hartogh, MPI for Solar System Research
MPI for Solar System Research
(08:00 - 11:50)
Abstract
WMC-7: Importance of Big Ears in Space and on Ground in Astrophysics Applications
Tadashi Takano
Tadashi Takano, JAXA
JAXA
(08:00 - 11:50)

-

Milad Koohi, Andreas Tag
Texas A&M Univ., Qorvo
Location
208
Abstract

The integration of RF acoustics with quantum technologies presents new opportunities for advances in both classical and quantum systems. This workshop will bring together leading experts from academia and industry to explore key innovation opportunities at the intersection of these fields. The event begins with a look at RF acoustic resonators, addressing challenges in fabrication and simulation. Key performance issues will be explored, alongside modeling techniques to optimize devices. The workshop will be followed by a presentation on the limitations of today’s acoustic wave technologies and discussions on tackling them. Next, high-overtone bulk acoustic-wave resonators (HBARs) are discussed for their ability to support ultrahigh coherence phonon modes, with implications for quantum memory, sensors, and transducers. Strategies for quantum control of phonons via optomechanical and electromechanical couplings will be introduced. The workshop also highlights advances in phononic circuits for classical and quantum information processing, focusing on electron-phonon interactions and non-linearities. Recent progress in Surface Acoustic Wave (SAW) devices for quantum computing, including their integration with superconducting circuits, will be showcased. Finally, thermal management in nanoscale devices will be discussed, offering solutions to challenges in heat dissipation. A panel discussion will conclude the workshop, encouraging collaboration between the RF acoustics and quantum communities.

Technical Papers
Abstract
WMD-1: RF Acoustic Wave Resonators, Getting Started
Ken-ya Hashimoto
Ken-ya Hashimoto, UESTC
UESTC
(08:00 - 17:20)
Abstract
WMD-2: mm-Wave Acoustics: Tackling a Fundamental Limitation of Acoustic Wave Technologies
Milad Koohi
Milad Koohi, Texas A&M Univ.
Texas A&M Univ.
(08:00 - 17:20)
Abstract
WMD-3: Quantum Control of Bulk Acoustic Phonons
Peter T. Rakich
Peter T. Rakich, Yale Univ.
Yale Univ.
(08:00 - 17:20)
Abstract
WMD-4: Microwave Frequency Phononic Classical and Quantum Information Processing Enabled By Strong Electron-Phonon Interactions
Matt Eichenfield
Matt Eichenfield, Univ. of Arizona
Univ. of Arizona
(08:00 - 17:20)
Abstract
WMD-5: Manipulating Surface Acoustic Wave Phonons in the Quantum Regime
Ming-Han Chou
Ming-Han Chou, Amazon
Amazon
(08:00 - 17:20)
Abstract
WMD-6: Design and Fabrication of Phononic Integrated Circuits in Scandium Aluminum Nitride
Siddhartha Ghosh
Siddhartha Ghosh, Northeastern University
Northeastern University
(08:00 - 17:20)
Abstract
WMD-7: Engineering of Heat Flow in Nanoscale Devices
Ali Shakouri
Ali Shakouri, Purdue Univ.
Purdue Univ.
(08:00 - 17:20)
Mohamed M. Fahmi, Gamal Hegazi, Aly E. Fathy
DRDC, Hegazi Consulting, University of Tennessee Knoxville
Location
210
Abstract

This workshop delves into advanced modeling techniques and innovative design strategies for high-power microwave passive components, such as power combiners, filters and multiplexers, which are crucial for applications in telecommunications, radar, and satellite communications. The workshop aims to provide participants with the latest insights and practical skills to tackle challenges in high-power microwave component design. Overview and Core Content: The workshop begins with an overview of passive components, highlighting their roles in microwave systems. It covers the principles and design methodologies of high-power components, including fixed frequency filters, radial combiners, waveguide polarizers, and tunable 3D filters. Sessions provide a detailed look at specific design challenges and solutions, offering a comprehensive understanding of the technical aspects. Key Challenges: Addressing critical challenges, such as RF breakdown and thermal management, is a key focus of the workshop. These issues are vital for components operating under high-power conditions in both terrestrial and space-based systems. The sessions will explore advanced modeling techniques and strategies to overcome these challenges, ensuring high reliability and performance. Emerging Technologies and Innovations: The workshop emphasizes emerging technologies reshaping high-power microwave design, particularly the integration of Artificial Intelligence (AI) and Machine Learning (ML) for optimizing high-power filters. This allows for enhanced performance, reduced design time, and greater reliability. The use of additive manufacturing (AM) for waveguide subsystems is also highlighted, demonstrating its capacity to create complex, efficient designs that exceed traditional manufacturing capabilities. Specialized talks: Sessions will cover AI-driven optimization techniques, including ML algorithms for predictive modeling and real-time adjustments. Participants will gain insights into advanced modeling of high-power components using modern software tools, as well as the synthesis of additively manufactured waveguide assemblies. These sessions are tailored to provide practical knowledge that attendees can directly apply to their work. Expert Interaction and Distinguished Speakers: Featuring a panel of distinguished speakers who are experts in the field, the workshop offers opportunities for direct interaction and engagement. Each session includes Q&A segments, allowing attendees to discuss challenges and gain deeper insights. This format encourages a collaborative atmosphere, promoting the exchange of ideas and professional networking. Community Support and Open Discussion: The workshop is supported by the Microwave Theory and Techniques Society (MTT-S), specifically through Technical Committees TC-4 (Passive Components) and TC-5 (Filters), underlining the significance of these topics within the microwave community. An open discussion session will enable participants to delve deeper into topics, propose ideas, and collaborate on emerging challenges, creating an inclusive environment for all attendees. Goals and Impact: By combining advanced modeling, innovative design strategies, and emerging technologies, this workshop aims to advance high-power microwave component design and manufacturing. It seeks to equip participants with the tools, knowledge, and connections needed to drive innovation in their work. Through a comprehensive and interactive program, the workshop aspires to foster the development of high-performance, reliable, and efficient high-power microwave components for contemporary RF and microwave systems.

Technical Papers
Abstract
WME-1: Emerging MHz-Through-THz Structures and Techniques that Challenge the Electromagnetic Modeling and Simulation Community
Ke Wu
Ke Wu, Polytechnique Montréal
Polytechnique Montréal
(08:00 - 17:20)
Abstract
WME-2: Design Techniques of High-Power Radial Combiners
Mohamed M. Fahmi
Mohamed M. Fahmi, DRDC
DRDC
(08:00 - 17:20)
Abstract
WME-3: Efficient Generation of Exact Filter Models for High-Power Analysis
Daniel Swanson
Daniel Swanson, DGS Associates
DGS Associates
(08:00 - 17:20)
Abstract
WME-4: Design Aspects of Waveguide Polarizers and Orthomode Transducers
Jorge A. Ruiz-Cruz
Jorge A. Ruiz-Cruz, Universidad Politécnica de Madrid
Universidad Politécnica de Madrid
(08:00 - 17:20)
Abstract
WME-5: AI Optimization of High-Power Microwave Filters
Qi-Jun Zhang
Qi-Jun Zhang, Carleton Univ.
Carleton Univ.
(08:00 - 17:20)
Abstract
WME-6: RF Breakdown Analysis and Thermal Management Within CST Studio Suite Environment
Carlos Vicente
Carlos Vicente, Dassault Systèmes
Dassault Systèmes
(08:00 - 17:20)
Abstract
WME-7: Advanced Modeling and Synthesis of Consolidated Additively Manufactured Waveguide Filter Assemblies
Laila Salman
Laila Salman, Ansys
Ansys
(08:00 - 17:20)
Abstract
WME-8: Innovative Waveguide and 3D Tunable Filters
Raafat R. Mansour
Raafat R. Mansour, Univ. of Waterloo
Univ. of Waterloo
(08:00 - 17:20)
Gia Ngoc Phung, Abhijeet Kanitkar
PTB, FBH
Location
211
Abstract

Future wireless systems operating beyond 100GHz will enable a wide range of applications such as high data-rate communications, radar sensing and imaging. Such wireless systems are becoming a reality given the rapid increase in the development of RF devices at upper mm-wave and sub-THz frequency range. Accurate on-wafer measurements play an important role in the development of many established and emerging industrial applications. It is key that the performance of the fabricated planar RF circuits must be characterized by performing on-wafer measurements for quality assurance or during product development as a feedback to the design process. However, despite the significant progress made over the last decade in improving the accuracy of on-wafer measurements, several challenges remain to be overcome, particularly as frequencies increase. One of the most challenging aspects of on-wafer measurements is the presence of probe parasitics, multimode propagation and neighborhood effects. These effects occur both in active and passive devices, which are the key components of RF systems. This workshop will review the challenges and opportunities of on-wafer measurements and present fundamental aspects of on-wafer measurements, such as techniques to minimize calibration and measurement errors in the mm-wave range, the on-wafer traceability path, and techniques to improve on-wafer measurement accuracy. The workshop will also emphasize on-wafer calibration and automation for active device characterization and will address the importance of on-wafer measurements from IC designer’s perspective. During this interactive full-day workshop, ten experts from around the world will share their experience and guide you through various aspects of on-wafer measurements. The speakers come from a variety of backgrounds: National Metrology Institutes (NMIs) from the USA, Europe and Asia, instrument manufacturers, industry and academia. The aim of this workshop is therefore to provide an overview of these current research areas and to present future directions in the field of on-wafer measurements.

Technical Papers
Abstract
WMF-1: On-Wafer Calibrations and Material Measurements
Nathan Orloff
Nathan Orloff, NIST
NIST
(08:00 - 17:20)
Abstract
WMF-2: Measurement Accuracy Improvement in On-Wafer Measurement by RF Signal Detection Technique
Ryo Sakamaki
Ryo Sakamaki, AIST
AIST
(08:00 - 17:20)
Abstract
WMF-3: Transferring On-Wafer Traceability to Industrial Lumped-Element Calibrations
Uwe Arz
Uwe Arz, PTB
PTB
(08:00 - 17:20)
Abstract
WMF-4: Optimizing Calibration Process and Reducing Measurement Uncertainties in Wafer-Level mm-Wave Range Characterization
Andrej Rumiantsev
Andrej Rumiantsev, MPI
MPI
(08:00 - 17:20)
Abstract
WMF-5: Broadband Differential On-Wafer Measurements: Challenges in De-Embedding, Drive Control and Related Aspects
Jon Martens
Jon Martens, Anritsu
Anritsu
(08:00 - 17:20)
Abstract
WMF-6: On-Wafer 4-Port Measurements from 70kHz to 220GHz in a Single Sweep
James Hwang
James Hwang, Cornell Univ.
Cornell Univ.
(08:00 - 17:20)
Abstract
WMF-7: On-Wafer Characterization of Sub-THz InP HBTs: Importance of Choosing the Proper Error Correction Algorithm
Abhijeet Kanitkar
Abhijeet Kanitkar, FBH
FBH
(08:00 - 17:20)
Abstract
WMF-8: Approaches to Carry Out Well-Documented Measurements for Active Devices Using Varying Calibration Methodologies
James Hibbert
James Hibbert, FormFactor
FormFactor
(08:00 - 17:20)
Abstract
WMF-9: Addressing SiGe HBT Measurement Challenges Through the 16-Error-Term Calibration Method
Tarek Bouzar
Tarek Bouzar, IMS-Bordeaux
IMS-Bordeaux
(08:00 - 17:20)
Abstract
WMF-10: mm-Wave On-Wafer Measurements from a CMOS IC Designer’s Perspective
Shuhei Amakawa
Shuhei Amakawa, Hiroshima Univ.
Hiroshima Univ.
(08:00 - 17:20)
Bertrand Parvais, Nadine Collaert, Mostafa Emam, Marianne Renoz
IMEC, Incize
Location
215
Abstract

GaN HEMT technology plays a crucial role in wireless telecom infrastructure for 3G, 4G, and 5G standards. Thanks to its excellent transport properties, GaN HEMTs support highly efficient, high-power operation at frequencies up to several tens of GHz. This makes them particularly well-suited for the FR3 spectrum (7–24GHz), which has emerged as a key focus for 6G communications. Historically, GaN has been grown hetero-epitaxially on high-resistivity SiC substrates, known for their superior performance but also high cost. Recently, driven by the success of GaN in power switching applications, GaN-on-Si is gaining momentum in RF and microwave communication. While GaN-on-Si introduces some trade-offs — such as lower thermal conductivity and parasitic effects like conductive channels at the Si/AlN interface — it presents immense potential due to its economic advantages. Silicon substrates are not only more affordable, but can also be produced at up to 300mm in diameter and processed in high-volume Si foundries. Additionally, GaN-on-Si offers technical benefits like scalability and easier integration with Si CMOS technology. In this workshop, we will explore GaN-on-Si HEMT technology in the FR3 spectrum from multiple angles. Topics include material science, the foundry perspective, device scaling, reliability, co-integration with existing technologies, and its application in both telecom infrastructure and user devices. Competitive benchmarking and future market prospects will also be discussed. This workshop features presentations by experts from both industry and academia, providing a comprehensive overview of the state of GaN-on-Si technology. Interactive sessions, including live polling, Q&A discussions, and a panel, will allow participants to engage with speakers and fellow attendees.

Technical Papers
Abstract
WMG-1: GaN-on-SiC vs. GaN-on-Si: Emerging Opportunities and Market Dynamics in the RF GaN Industry
Aymen Ghorbel
Aymen Ghorbel, Yole Group
Yole Group
(08:00 - 17:20)
Abstract
WMG-2: Challenges and Solutions of Epitaxy by MOCVD for RF GaN/Si
Herwig Hahn
Herwig Hahn, Aixtron
Aixtron
(08:00 - 17:20)
Abstract
WMG-3: Deep Traps in GaN-on-Silicon HEMT Devices and their Effects on RF Performance
Sinan Goktepeli
Sinan Goktepeli, IQE
IQE
(08:00 - 17:20)
Abstract
WMG-4: Challenges and Opportunities of GaN-on-Si from a Foundry Perspective
Rick Rassel
Rick Rassel, GLOBALFOUNDRIES
GLOBALFOUNDRIES
(08:00 - 17:20)
Abstract
WMG-5: GaN-Si-Based RF Switch to Improve SWaP and Reduce Complexity Out of High-Power Radio Design
Manish Shah
Manish Shah, TagoreTech
TagoreTech
(08:00 - 17:20)
Abstract
WMG-6: Innovations in GaN-on-Silicon Technology for High Performance Power and RF Applications
Han-Wui Then
Han-Wui Then, Intel
Intel
(08:00 - 17:20)
Abstract
WMG-7: Challenges and Opportunities of GaN-on-Si Technology for Wireless Applications in the FR3 (8–24GHz) Band
Bin Lu
Bin Lu, Finwave Semiconductor
Finwave Semiconductor
(08:00 - 17:20)
Abstract
WMG-8: Wireless Application in the FR3 Band, a Sweet Spot for GaN-on-Si
Helmut Brech
Helmut Brech, Infineon Technologies
Infineon Technologies
(08:00 - 17:20)
Abstract
WMG-9: A GaN Technology to Meet Future Radio Requirements
Konstantinos Mimis
Konstantinos Mimis, Sony
Sony
(08:00 - 17:20)
Abstract
WMG-10: Thermal Management Solutions to GaN Electronics
Martin Kuball
Martin Kuball, Univ. of Bristol
Univ. of Bristol
(08:00 - 17:20)
Abstract
WMG-11: Reliability Challenges of GaN-on-Si RF Technologies
Tian-Li Wu
Tian-Li Wu, NYCU
NYCU
(08:00 - 17:20)
Yang Yang, Guoan Wang
UTS, Univ. of South Carolina
Location
302
Abstract

Microwave materials and processing/manufacturing technologies are the fundamental questions to be addressed for all microwave devices, systems and applications. The committee focuses on bridging the gap between microwave materials/manufacturing technologies and their applications in RF devices, microwave circuits, systems and applications. The committee promotes the materials and processing solutions for implementing functional RF devices and systems using conventional and emerging processes, including additive, subtractive, and hybrid manufacturing, multi-material fabrication and integration. The committee is an excellent window for cross-discipline collaboration and innovation. Experts from microwave chemistry and physics are involved in the working groups expanding the FoI of MTT society, which brings opportunities for the MTT-S community to gain cross-disciplinary expertise. The proposed workshop will host distinguished researchers in this area to share their news and views on microwave materials and processing technologies for radio-frequency and wireless applications.

Technical Papers
Abstract
WMH-1: Silicon Micro-Machined Liquid Crystal Tunable Microwave and mm-Wave Devices
Raafat R. Mansour
Raafat R. Mansour, Univ. of Waterloo
Univ. of Waterloo
(08:00 - 17:20)
Abstract
WMH-2: Innovative Filter Designs: Leveraging 3D Printing for Enhanced Performance
Cristiano Tomassoni
Cristiano Tomassoni, Università di Perugia
Università di Perugia
(08:00 - 17:20)
Abstract
WMH-3: Introduction to Physical Optics for Modeling Complex Microwave and Antenna Devices
Oscar Quevedo-Teruel
Oscar Quevedo-Teruel, KTH
KTH
(08:00 - 17:20)
Abstract
WMH-4: Monolithic 3D Integrated RF Components Enabled by Additive Manufacturing Technologies
Dimitra Psychogiou
Dimitra Psychogiou, Univ. College Cork
Univ. College Cork
(08:00 - 17:20)
Abstract
WMH-5: Advancing Antennas and Microwave Devices Through Laser Powder-Bed Fusion Additive Manufacturing
José Rico-Fernández
José Rico-Fernández, Northern Waves
Northern Waves
(08:00 - 17:20)
Abstract
WMH-6: Switchable and Tunable Ferroelectric Devices for Adaptive and Reconfigurable RF Circuits (TBC)
Amir Mortazawi
Amir Mortazawi, Univ. of Michigan
Univ. of Michigan
(08:00 - 17:20)
Abstract
WMH-7: Liquid Metal (LM) Enabled Microwave and mm-Wave Devices
Yi Wang
Yi Wang, Univ. of Birmingham
Univ. of Birmingham
(08:00 - 17:20)
Abstract
WMH-8: “Zero-Power” Additively Manufactured FHE-Enabled Wireless/5G+ Ultrabroadband Modules for 5G+, Digital Twins, SmartAg, Industry 4.0 and Smart Cities Applications
Manos M. Tentzeris
Manos M. Tentzeris, Georgia Tech
Georgia Tech
(08:00 - 17:20)
Michael Haider, Thomas E. Roth, Vladimir Okhmatovski
Technische Univ. München, Purdue Univ., Univ. of Manitoba
Location
305/309
Abstract

The demonstration of a quantum computer outperforming the largest conventional supercomputers has triggered researchers and enterprises worldwide to work towards improving these systems’ hardware performance and investigating their novel uses in the form of quantum methods and algorithms. In the case of superconducting quantum computers, low temperatures and weak microwave control signals are used, making the quantum nature of the electromagnetic field important. Hence, the design, optimization, and scaling of the respective microwave components must be performed on an entirely new theoretical basis, given by the framework of circuit quantum electrodynamics. For microwave engineers, this signifies a transfer of knowledge from classical electromagnetics to the quantum realm. More or less standard microwave components such as mixers, isolators, parametric amplifiers, and circulators are vital for realizing superconducting quantum computers. Also, alternative quantum computing concepts, such as trapped ions or spin qubits, heavily rely on microwave technology. Modeling the associated devices and components requires methods from quantum theory or hybrid semi-classical quantum approaches, which are particularly important if quantum effects are fundamental to the device’s operation. In tandem with hardware developments, many quantum algorithms have been proposed to exploit the unique properties of quantum computers to solve challenging computational tasks. In the field of electromagnetics, specialized quantum algorithms have the potential for significant speedups against classical computing strategies, especially when it comes to NP-hard optimization problems. Quantum algorithms also show great potential for solving integral equations, inverse scattering problems, and synthesizing antenna radiation patterns. However, at the current stage, inevitable noise and limited qubit coherence times are prohibitive for most methods to show a real quantum advantage. To exploit the full potential of general-purpose quantum computers, which will enable breakthrough applications in the mid and long-term, further technological advances in quantum error correction and qubit readout are necessary. This will require significant scaling of current hardware while continuing to engineer components to achieve improved performance. Thus, in this workshop, we will address current topics in the modeling and experimental realization of microwave devices across a range of quantum hardware platforms. Hardware aspects will be connected to the design and implementation of advanced quantum algorithms for general-purpose quantum computers. The workshop aims to bring together specialists in the modeling, design, and experimental realization of quantum hardware and experts in quantum algorithms with a focus on computational electromagnetics to discuss their individual ideas and perspectives on quantum computing, as well as other emerging technologies like quantum sensors and quantum communications. Another important aspect of this workshop is to provide a comprehensive step-by-step introduction to the strange new world of quantum theory, specially tailored for microwave engineers. This introduction will be given through a comprehensive tutorial at the beginning of the workshop, bridging the language barrier between quantum physics and RF microwave engineering.

Technical Papers
Abstract
WMI-1: Tutorial: Introduction to Circuit Quantum Electrodynamics
Michael Haider
Michael Haider, Technische Univ. München
Technische Univ. München
(08:00 - 17:20)
Abstract
WMI-2: Classical Electromagnetic Considerations in Designing Superconducting Qubit Devices
Ebrahim Forati, Brandon Langley
Ebrahim Forati, Google
Google, Google
(08:00 - 17:20)
Abstract
WMI-3: Efficient High-Fidelity Numerical Modeling Methods for Superconducting Quantum Circuit Devices
Thomas E. Roth
Thomas E. Roth, Purdue Univ.
Purdue Univ.
(08:00 - 17:20)
Abstract
WMI-4: Advanced Designs and Control of Superconducting Qubits
Stefan Filipp
Stefan Filipp, Walther-Meissner-Institute
Walther-Meissner-Institute
(08:00 - 17:20)
Abstract
WMI-5: Solution of Sparse Matrix Equations Using HHL Algorithm with Quantum Walk Unitary Operator
Xinbo Li, Christopher Phillips, Vladimir Okhmatovski
Vladimir Okhmatovski, Univ. of Manitoba
Univ. of Manitoba, Univ. of Waterloo, Univ. of Manitoba
(08:00 - 17:20)
Abstract
WMI-6: Trapped-Ion Quantum Computing at Quantinuum
Adam Reed, Quantinuum Hardware Team
Adam Reed, Quantinuum
Quantinuum, Quantinuum
(08:00 - 17:20)
Abstract
WMI-7: Deep Microscopic Quantum Solvers for Spin Qubits Coupled to Complex Electromagnetic Environments
Wenbo Sun, Sathwik Bharadwaj, Dan Jiao, Zubin Jacob
Zubin Jacob, Purdue Univ.
Purdue Univ., Purdue Univ., Purdue Univ., Purdue Univ.
(08:00 - 17:20)
Abstract
WMI-8: Rydberg Atom-Based E-Field Sensors and Receivers
Christopher L. Holloway
Christopher L. Holloway, NIST
NIST
(08:00 - 17:20)
Abstract
WMI-9: Design and Simulation of Waveguide-Based Devices in 2D Dirac Materials
Dries Vande Ginste, Emile Vanderstraeten
Dries Vande Ginste, Ghent Univ.
Ghent Univ., Ghent Univ.
(08:00 - 17:20)
Abstract
WMI-10: Efficient Single Photon Sources Based on Quantum Metasurfaces
Christos Argyropoulos, Sky Semone
Christos Argyropoulos, Penn State University
Penn State University, Penn State University
(08:00 - 17:20)
Mahmoud Wagih, Mohammad H. Zarifi
Univ. of Glasgow, Univ. of British Columbia
Location
306
Abstract

Microwaves emerged as a pervasive interface to read advanced materials, and to remotely detect measurands. This workshop will present state-of-the-art insights by inter-disciplinary research leaders around different microwave sensing modalities, illustrating a holistic image from advanced materials at MHz to sub-THz frequencies, to remote sensing using novel microwave front-ends, and system co-design. Microwave sensing characterisation will be presented for the first time for new materials including 2D materials, polymers and biodegradable metals. Moving to readouts/remote sensing, co-advances in circuits and antennas will be presented with a focus on adapting radio astronomy, mm-wave radar, exploiting losses, and other novel readout techniques. Through both applications, sustainable design guidelines will be presented including low-power front-end design, battery-free wireless-powered and chipless systems, as well as, for the first time, Life Cycle Assessment (LCA) of microwave circuits. In addition to expert speakers, our workshop will bring lightning talks from excellent students/young professionals. Thus fostering 2-way knowledge exchange and showcasing the diversity and future of MTT. The talks are: Prof. Ferran Martin, Universitat Autònoma de Barcelona, “Lossy Microwave Sensors”; Dr Sara Salem Hesari, National Research Centre Canada, “Leveraging Radio Astronomy Techniques for Enhanced RF and Microwave Sensing”; Dr Laila Salman, Ansys Canada, “Multiphysics Design and Analysis of Silver-Based Low-Emissivity Coating Technology for Energy Saving Sustainable Windows Applications”; Prof. Aline Eid, University of Michigan, “Ultra-Low-Power, Long-Range Trackers enabled by mm-Wave Backscatter and Radar Principles”; Prof. Will Whittow, Loughborough University, “Additive Metamaterials and Far-Field Techniques for Sensing”; (Co-Chair) Prof Mohammad Zarif, University of British Columbia, “RF/Microwave Wearable Devices for Body Armor and Personal Protective Equipment”; (Co-Chair) Prof Mahmoud Wagih, University of Glasgow, “Sustainable Materials-Enabled Microwave Sensors: Are We Considering Manufacturing?”.

Technical Papers
Abstract
WMJ-1: Lossy Microwave Sensors
Ferran Martín
Ferran Martín, Univ. Autònoma de Barcelona
Univ. Autònoma de Barcelona
(08:00 - 17:20)
Abstract
WMJ-2: Multiphysics Design and Analysis of Silver-Based Low-Emissivity Coating Technology for Energy Saving Sustainable Windows Applications
Laila Salman
Laila Salman, Ansys
Ansys
(08:00 - 17:20)
Abstract
WMJ-3: RF/Microwave Wearable Devices for Body Armor and Personal Protective Equipment
Mohammad H. Zarifi
Mohammad H. Zarifi, Univ. of British Columbia
Univ. of British Columbia
(08:00 - 17:20)
Abstract
WMJ-4: Ultra-Low-Power, Long-Range Trackers Enabled by mm-Wave Backscatter and Radar Principles
Aline Eid
Aline Eid, Univ. of Michigan
Univ. of Michigan
(08:00 - 17:20)
Abstract
WMJ-5: 3D-Printed RF Devices and Antennas for Sensing
William Whittow
William Whittow, Loughborough Univ.
Loughborough Univ.
(08:00 - 17:20)
Abstract
WMJ-6: Leveraging Radio Astronomy Techniques for Enhanced RF and Microwave Sensing
Sara Salem Hesari
Sara Salem Hesari, National Research Council Canada
National Research Council Canada
(08:00 - 17:20)
Abstract
WMJ-7: Sustainable Materials-Enabled Microwave Sensors: Are We Considering Manufacturing?
Mahmoud Wagih
Mahmoud Wagih, Univ. of Glasgow
Univ. of Glasgow
(08:00 - 17:20)
Spyridon Pavlidis, Farid Medjdoub, Andrea Arias-Purdue
North Carolina State Univ., IEMN (UMR 8520), HRL Laboratories
Location
307
Abstract

Predictions based on popular figures of merit, such as the Johnson Figure of Merit (JFOM) and Baliga Figure of Merit (BFOM), have motivated the development of wide bandgap semiconductors (WBGSs) for RF and power electronics. In recent years, the rapid adoption of gallium nitride (GaN) and silicon carbide (SiC) demonstrates that investments in these technologies is indeed paying off. Thus, it is natural to look ahead and ask if even better performance can be obtained from devices based on emerging ultra-wide bandgap semiconductors (UWBGSs). While the above mentioned FOMs indicate that these UWBGSs could outperform today’s WBGS devices, there remain technological hurdles at all levels: from substrates and epitaxy, to contacts and passivation. This workshop brings together international experts currently investigating these topics to discuss the state-of-the-art of UWBGS III-Nitride (AlGaN, AlN), gallium oxide and diamond devices for RF and power electronics. In addition to covering the use of UWBGSs as a channel material, the use of these materials as substrates and thermal management solutions will also be examined, with the overarching goal of exploring how to best use UWBGS in next-generation electronic devices. The workshop will conclude with a round table session to invite audience participation and interaction with the speakers.

Technical Papers
Abstract
WMK-1: Ultra-Wide Bandgap Semiconductors for Next Generation High-Frequency Devices
Tom Oder
Tom Oder, Army Research Laboratory
Army Research Laboratory
(08:00 - 17:20)
Abstract
WMK-2: AlN Crystal Growth and Related Power Devices — Status and Further Path in Germany
Elke Meissner
Elke Meissner, Fraunhofer IISB
Fraunhofer IISB
(08:00 - 17:20)
Abstract
WMK-3: The Role and Challenges of Ultra-Wide Bandgap Semiconductors in Next-Generation GaN HEMTs
Junji Kotani, Junya Yaita, Akira Mukai, Shigeki Yoshida, Akihiro Hayasaka, Kozo Makiyama, Ken Nakata
Junji Kotani, Sumitomo Electric
Sumitomo Electric, Sumitomo Electric, Sumitomo Electric, Sumitomo Electric, Sumitomo Electric, Sumitomo Electric, Sumitomo Electric
(08:00 - 17:20)
Abstract
WMK-4: AlN-Based RF Devices
Huili Grace Xing
Huili Grace Xing, Cornell Univ.
Cornell Univ.
(08:00 - 17:20)
Abstract
WMK-5: Material and Device Engineering for High-Performance AlGaN RF Electronics
Siddharth Rajan
Siddharth Rajan, The Ohio State University
The Ohio State University
(08:00 - 17:20)
Abstract
WMK-6: Ga₂O₃ FETs for Future Power and Harsh Environment Electronics
Masataka Higashiwaki, Zhenwei Wang, Takumi Ohtsuki, Takafumi Kamimura, Hisashi Murakami, Yoshinao Kumagai
Masataka Higashiwaki, Osaka Metropolitan University
Osaka Metropolitan University, NICT, NICT, NICT, Tokyo University of Agriculture and Technology, Tokyo University of Agriculture and Technology
(08:00 - 17:20)
Abstract
WMK-7: Diamond Electronics: Current Status and Path Forward
Tony G. Ivanov
Tony G. Ivanov, Army Research Laboratory
Army Research Laboratory
(08:00 - 17:20)
Abstract
WMK-8: Thermal Dynamics in Low Thermally Conductive Ultra Wide Bandgap Semiconductors
Georges Pavlidis
Georges Pavlidis, Univ. of Connecticut
Univ. of Connecticut
(08:00 - 17:20)
Abstract
WMK-9: Thin-Film Diamond Integration for Advanced Thermal Management in Electronics
Srabanti Chowdhury
Srabanti Chowdhury, Stanford Univ.
Stanford Univ.
(08:00 - 17:20)
Vladimir Okhmatovski, Costas D. Sarris, Zhizhang Chen
Univ. of Manitoba, Univ. of Toronto, Dalhousie University
Location
308
Abstract

Numerical methods for computational electromagnetics (CEM) are ubiquitous in design of today’s microwave and THz electronics, wireless communication links, high-speed digital interconnects and various other applied areas driving modern information and communication technologies to their new frontiers. Acceleration of these methods with fast algorithms and their deployment on heterogeneous high-performance computing platforms featuring farms of CPUs and GPUs enables the shrinking of simulation times from days to seconds, ensuring rapid virtual prototyping and drastically shrinking the time to market for today’s industrial, consumer, and defence products. Depending on the applications, sophistication of the geometric and material properties, as well as required accuracy of the simulations, differential equation-based methods such as FEM and FDTD, integral equation methods such as MoM and LCN, or high-frequency asymptotic methods such as SBR are commonly used. To ensure minimum simulation time and memory use, these methods are typically not implemented in their stand-alone form, but are used in conjunction with sophisticated sparse matrix algorithms, hierarchical compression schemes, and tensor train decompositions, and are often deployed on hybrid shared and distributed memory multiprocessors augmented with GPUs. The workshop will consist of two parts (half-day each): Part I will introduce microwave engineers and active users of commercial tools in a step-by-step manner to the underlying electromagnetic theory and algorithmic background of popular computational tools by means of a comprehensive coverage on the most popular numerical schemes such as FEM, FDTD, MoM, High-Frequency asymptotic methods and their hybridization through domain decomposition strategies. Hands-on exercises delivered through Slido platform will make Part I of the workshop interactive and engaging for the participants. It will conclude with a unified outlook at the discussed numerical methods. Part II of the workshop will target an advanced audience and introduce iterative fast algorithms in CEM, including FFT based methods and Fast Multipole Method as well as emerging fast direct algorithms based on hierarchical matrices (H- and H2-matrices) and tensor train decompositions. The relation of the material characterization to CEM modeling will be discussed in this part also. Part II will conclude with an expert panel discussion on recent advances in the use of machine-learning methods in CEM.

Technical Papers
Abstract
WML-1: Fundamentals of Method of Moments
Branko Kolundzija
Branko Kolundzija, WIPL-D
WIPL-D
(08:00 - 17:20)
Abstract
WML-2: Fundamentals of Finite Element Method
David Abraham, Jonatan Aronsson
David Abraham, CEMWorks, Jonatan Aronsson, CEMWorks
CEMWorks, CEMWorks
(08:00 - 17:20)
Abstract
WML-3: Fundamentals of FDTD
Costas D. Sarris
Costas D. Sarris, Univ. of Toronto
Univ. of Toronto
(08:00 - 17:20)
Abstract
WML-4: Fundamentals of Ray Tracing
Costas D. Sarris
Costas D. Sarris, Univ. of Toronto
Univ. of Toronto
(08:00 - 17:20)
Abstract
WML-5: Towards a Unified Theory that Reveals the Essence of Numerical Methods in Electromagnetics
Zhizhang Chen
Zhizhang Chen, Dalhousie University
Dalhousie University
(08:00 - 17:20)
Abstract
WML-6: Computational Electromagnetics and Material Characterization: Some Meeting Points of the Two Worlds
Malgorzata Celuch
Malgorzata Celuch, QWED
QWED
(08:00 - 17:20)
Abstract
WML-7: Fast Multipole Method and its Applications
Jonatan Aronsson
Jonatan Aronsson, CEMWorks
CEMWorks
(08:00 - 17:20)
Abstract
WML-8: Adaptive Integral Method and Other FFT-Based Fast Algorithms
Vladimir Okhmatovski
Vladimir Okhmatovski, Univ. of Manitoba
Univ. of Manitoba
(08:00 - 17:20)
Abstract
WML-9: Controlled Accuracy Direct H2-Matrix Arithmetic for Fast and Large-Scale Solutions of Maxwell’s Equations
Dan Jiao
Dan Jiao, Purdue Univ.
Purdue Univ.
(08:00 - 17:20)
Abstract
WML-10: Butterfly Matrices and Tensors: New Tools for High-Frequency Integral and Differential Equation Solvers, and High-Dimensional Transforms
Yang Liu
Yang Liu, Lawrence Berkeley National Laboratory
Lawrence Berkeley National Laboratory
(08:00 - 17:20)
Alexander Ruderer, Thomas Ussmueller
OvG Universität Magdeburg, B&E antec
Location
310-312
Abstract

The rapid evolution of wireless communication and sensing systems necessitates continuous innovation to meet the increasing demand for higher data-rates, improved spectrum efficiency, and reduced latency. One promising technique to address these challenges is the In-Band Full-Duplex (IBFD), also known as Simultaneous Transmit And Receive (STAR) technology. IBFD enables a device to simultaneously transmit and receive on the same frequency at the same time. The benefits of this technology include a doubling of the capacity, higher spectral efficiency, reduced latency, a higher data-rate, optimized network performance, and improved sensing systems. In this workshop, several experts will present various approaches to cancel the inherent self-interference from the own transmitter. It begins by explaining the three domains where self-interference can be mitigated: propagation, analog, and digital domain. The current challenges and recent research advances are elucidated, and the presentations are organized in accordance with the overarching themes of the workshop. One presentation is dedicated to the analysis of digital self-interference phenomena occurring in different modulation formats within the VHF band. The presentation compares and contrasts the characteristics of analog (AM, FM, PM) and digital (OFDM) formats. Another presentation addresses IBFD phased array systems, with a focus on self-interference suppression techniques, including RF cancellation, adaptive beamforming, and digital filtering, and their potential for application in 6G systems. A subsequent presentation will examine the utilisation of full-duplex FMCW radar systems, with a particular focus on the deployment of active Self-Interference Cancellation Couplers (SICCs) to enhance radar system isolation and facilitate miniaturisation and over-the-air synchronisation. Additional presentations address self-interference cancellation in Advanced Duplex (AD) systems, with an emphasis on techniques within MIMO communication and adaptive RF front-ends, which are of particular importance for IBFD and FDD, employing tunable filters and electrical balance duplexers. Furthermore, the workshop examines the potential of Gallium Nitride (GaN) technology in the development of fully integrated transceiver front-ends for applications such as radar and electronic warfare. In this context, the material’s advantages in terms of power, size, and radiation tolerance, particularly for space systems, are emphasised. Additionally, the discussion encompasses a range of GaN designs, including power amplifiers and low-noise amplifiers, along with their associated testing and measurement processes.

Technical Papers
Abstract
WMM-1: Workshop Introduction
Thomas Ussmueller
Thomas Ussmueller, B&E antec
B&E antec
(08:00 - 17:20)
Abstract
WMM-2: Digital Self-Interference Cancellation for Different Modulation Formats
Alexander Ruderer
Alexander Ruderer, OvG Universität Magdeburg
OvG Universität Magdeburg
(08:00 - 17:20)
Abstract
WMM-3: CMOS Simultaneous Transmit and Receive (STAR) Front-Ends for Dual-Use Commercial and Defense Applications
Harish Krishnaswamy
Harish Krishnaswamy, Columbia Univ.
Columbia Univ.
(08:00 - 17:20)
Abstract
WMM-4: In-Band Full-Duplex Phased Array Circuits and Systems
Kenneth E. Kolodziej
Kenneth E. Kolodziej, MIT Lincoln Laboratory
MIT Lincoln Laboratory
(08:00 - 17:20)
Abstract
WMM-5: Self-Interference Cancellation Circuits for Advanced Duplex Systems
Byung-Wook Min
Byung-Wook Min, Yonsei Univ.
Yonsei Univ.
(08:00 - 17:20)
Abstract
WMM-6: Adaptive RF Front-Ends as a Key Enabler of Modern Communication Systems
Christof Pfannenmüller, Fabian Lurz
Christof Pfannenmüller, FAU Erlangen-Nürnberg
FAU Erlangen-Nürnberg, OvG Universität Magdeburg
(08:00 - 17:20)
Abstract
WMM-7: Balanced Single-Antenna RF Transceiver Architectures for Frequency-Agile Full-Duplex Wireless Communications
Nimrod Ginzberg
Nimrod Ginzberg, Tel Aviv University
Tel Aviv University
(08:00 - 17:20)
Abstract
WMM-8: Gallium Nitride: A Promising Technology for Fully Integrated Transceiver Front-End
Edward Gebara, D. Matlock, D. Frey, J. Shell, John Papapolymerou, John Albrecht, Matthew Hodek, Nicholas Miller
Edward Gebara, Michigan State Univ.
Michigan State Univ., Michigan State Univ., Michigan State Univ., Michigan State Univ., Michigan State Univ., Michigan State Univ., Michigan State Univ., Michigan State Univ.
(08:00 - 17:20)
Abstract
WMM-9: Reciprocal Full-Duplex FMCW Radar Systems with Self-Interference Cancellation for High Accuracy Distributed Radar Networks
Patrick Fenske, Andre Scheder, Tobias Kögel, Christian Carlowitz, Martin Vossiek
Patrick Fenske, FAU Erlangen-Nürnberg
FAU Erlangen-Nürnberg, FAU Erlangen-Nürnberg, FAU Erlangen-Nürnberg, FAU Erlangen-Nürnberg, FAU Erlangen-Nürnberg
(08:00 - 17:20)
Abstract
WMM-10: FD Challenges in the Context of Modern Base Station Transceivers
Marko Fleischer
Marko Fleischer, Nokia
Nokia
(08:00 - 17:20)
Abstract
WMM-11: To be provided later
Laila Marzall
University of Colorado Boulder
(08:00 - 17:20)
Aly E. Fathy, Ke Wu
University of Tennessee Knoxville, Polytechnique Montréal
Location
313
Abstract

The evolution of 3D passive components and devices has become increasingly important in advancing high-density integration and multifunctionality in microwave and mm-wave systems. Traditional planar technologies, such as 2D layouts on PCBs, often face limitations in scalability, integration density, and performance at higher frequencies due to increased parasitic effects and limited space for component placement. In contrast, 3D integration techniques leverage vertical stacking and embedding of components, significantly improving the overall performance, reducing form factors, and enhancing the functionality of passive circuits. 3D integration utilizes advanced materials and processes, including GaAs, CMOS, GaN, and MEMS, which offer distinct advantages over conventional approaches: (•1) GaAs-based Integrated Passive Device (IPD) Technology: GaAs IPD technology allows for the development of highly integrated, multifunctional filtering circuits. These circuits combine lumped and distributed elements, leading to compact designs that exhibit low loss and high-quality factors. (•2) MEMS-based Bulk Acoustic Wave (BAW) Filters: MEMS technologies enable the fabrication of high-performance BAW filters that offer superior selectivity and low insertion loss at microwave frequencies. The miniaturization and integration capabilities of MEMS devices allow these filters to be directly integrated into RF front-end modules, enhancing the performance of wireless communication systems. (•3) GaN-based Filtering Switches: GaN materials are known for their high breakdown voltage and power-handling capabilities, making them ideal for high-frequency, high-power applications. GaN-based filtering switches integrate filtering and switching functions, reducing the need for separate components and thereby minimizing signal loss and improving system efficiency. Addressing High-Frequency Challenges with 3D Technologies — high-frequency applications, particularly in the mm-wave range, pose unique challenges such as increased parasitic effects, signal loss, and thermal management issues. 3D integration addresses these challenges by: (•1) Reducing Size and Parasitics: The vertical stacking of components and the integration of passives directly onto semiconductor substrates minimize interconnect lengths and associated parasitics. (•2) Performance Optimization: By leveraging advanced electromagnetic modeling techniques and novel manufacturing processes like micro-dispensing and aerosol jetting, 3D technologies enable the design of complex metasurface architectures and efficient RF packaging solutions. These processes allow for the precise control of material properties and geometric configurations, leading to optimized performance in terms of bandwidth, insertion loss, and isolation. Heterogeneous Integration and Packaging Innovations — the integration of microelectronics and heterogeneous 2.5D/3D packaging techniques further supports the development of high-density, energy-efficient designs essential for emerging 5G and 6G systems. Advanced packaging methods, such as die-embedded glass substrates, provide innovative solutions for integrating high-frequency components. For example, a die-embedded glass packaging effectively mitigates electrical losses and manages thermal dissipation. Additionally, the ability to stack multiple layers of passive and active components enables the creation of highly compact modules. In this workshop, we address the transition to 3D high-integration technologies which marks a significant advance in the microwave and mm-wave field, offering a pathway to more compact, efficient, and multifunctional electronic systems. By overcoming the limitations of traditional planar approaches, 3D integration is set to revolutionize the design and implementation of high-frequency electronic systems, driving innovation and expanding the possibilities for future technologies.

Technical Papers
Abstract
WMN-1: Microwave and mm-Wave Multifunction Filtering Circuits Using Three-Dimensional High-Integration Technology
Wenquan Che
Wenquan Che, SCUT
SCUT
(08:00 - 17:20)
Abstract
WMN-2: The Role of Advanced Microelectronics and Heterogeneous Integration for Next-Generation 5G/6G Microsystems
Timothy Lee
Timothy Lee, IEEE President 2025
IEEE President 2025
(08:00 - 17:20)
Abstract
WMN-3: 3D Modeling and Advanced Manufacturing of Conformal RF Packaging and Metasurface Antennas
Eduardo A. Rojas-Nastrucci
Eduardo A. Rojas-Nastrucci, Embry-Riddle Aeronautical University
Embry-Riddle Aeronautical University
(08:00 - 17:20)
Abstract
WMN-4: Packaging Technologies for mm-Wave and Sub-THz Systems
Telesphor Kamgaing
Telesphor Kamgaing, Intel
Intel
(08:00 - 17:20)
Abstract
WMN-5: Realization of Passive Microwave Components Exploiting Available 3D Flexibility
Jakub Sorocki
Jakub Sorocki, AGH University of Krakow
AGH University of Krakow
(08:00 - 17:20)
Abstract
WMN-6: Die-Embedded Glass Packaging Technology
Madhavan Swaminathan
Madhavan Swaminathan, Penn State University
Penn State University
(08:00 - 17:20)
Abstract
WMN-7: Multilayered Wearable Ultrasound Technology
Sheng Xu
Sheng Xu, Univ. of California, San Diego
Univ. of California, San Diego
(08:00 - 17:20)
Abstract
WMN-8: Electromagnetic Modeling and Simulation Challenges for Silicon Interposers in 2.5D/3D IC Chip Design
Juliano Mologni, Laila Salman
Juliano Mologni, Ansys
Ansys, Ansys
(08:00 - 17:20)
George Shaker, Changzhi Li
Univ. of Waterloo, Texas Tech Univ.
Location
314
Abstract

The rapid advances in radar technology, along with AI and machine learning, are unlocking unseen insights into human behavior, health, and security. In “Unseen Insights: Radar and the Future of Human Sensing,” we explore how radar is reshaping the future of human sensing. From monitoring vital-signs such as heart rate, breathing rate, glucose levels, and blood pressure to enhancing human security, radar’s ability to detect minute physiological and behavioral details without contact signals a new era where human sensing becomes more intelligent, seamless, and highly adaptable. This workshop will dive into how radar, coupled with AI, is set to revolutionize key industries, from healthcare to automotive, by offering transformative, real-time solutions to monitor and understand human activity in ways previously unimaginable. As radar technology continues to evolve, it is poised to redefine how we interact with our surroundings. Whether it is enhancing in-home health monitoring, improving security systems, creating safer autonomous vehicles, or becoming part of the next wave of AR/VR and smart home devices, radar is offering a window into the unseen. By capturing the subtlest of signals — heartbeat, breathing rate, glucose, blood pressure — radar has the potential to make environments more responsive, healthcare more proactive, and safety systems more robust. This workshop will highlight these groundbreaking developments, featuring insights from industry leaders, cutting-edge startups, and academic experts, all shaping the future of radar-powered human sensing.

Technical Papers
Abstract
WMO-1: Workshop Overview
George Shaker, Changzhi Li
George Shaker, Univ. of Waterloo, Changzhi Li, Texas Tech Univ.
Univ. of Waterloo, Texas Tech Univ.
(08:00 - 17:20)
Abstract
WMO-2: Towards Higher Accuracy in Vital-Sign Detection Using MIMO and Deep Learning
Aly E. Fathy
Aly E. Fathy, University of Tennessee Knoxville
University of Tennessee Knoxville
(08:00 - 17:20)
Abstract
WMO-3: Considerations for Accurate Respiratory Displacement Signature Measurement in Physiological Radar
Victor M. Lubecke
Victor M. Lubecke, University of Hawai`i at Mānoa
University of Hawai`i at Mānoa
(08:00 - 17:20)
Abstract
WMO-4: Radars, Digital Twins, and the Future: The Unseen Heroes of Tomorrow’s Technology
George Shaker
George Shaker, Univ. of Waterloo
Univ. of Waterloo
(08:00 - 17:20)
Abstract
WMO-5: Microwave Biomedical Radar for Clinical Applications
Changzhan Gu
Changzhan Gu, SJTU
SJTU
(08:00 - 17:20)
Abstract
WMO-6: Radar Applications in Mobile Phones for Ambient Awareness and Health Sensing
Jian Wang
Jian Wang, Google
Google
(08:00 - 17:20)
Abstract
WMO-7: Understanding the Nuances of Being Human: Implications for Radar-Based Human Motion Classification
Sevgi Zübeyde Gürbüz
Sevgi Zübeyde Gürbüz, North Carolina State Univ.
North Carolina State Univ.
(08:00 - 17:20)
Abstract
WMO-8: In-Cabin Radar Sensing
Anand Dabak
Anand Dabak, Texas Instruments
Texas Instruments
(08:00 - 17:20)
Abstract
WMO-9: Electromagnetic Simulation for Human Sensing Radar and Synthetic Data Generation: Challenges and Opportunities
Arien Sligar
Arien Sligar, Ansys
Ansys
(08:00 - 17:20)
Abstract
WMO-10: An AI Foundation Model for Contextual Interpretation of Radar Data
Jaime Lien
Jaime Lien, Archetype AI
Archetype AI
(08:00 - 17:20)
Abstract
WMO-11: Radar and Wi-Fi Sensing with Foundational Models: Enabling Passive Human Sensing
Avik Santra
Avik Santra, Infineon Technologies
Infineon Technologies
(08:00 - 17:20)

-

Debo Chowdhury
Broadcom Corp.
Rocco Tam
NXP Semiconductors
Location
203
Abstract

This session presents five high performance power amplifiers and front-end modules. The first three papers demonstrate the latest development in GaAs power amplifiers and FEMs for the next generation 6G applications. The next two papers focus on the innovation of power amplifiers using FD-SOI technology for WiFi 6 and 5G FR-2.

Technical Papers
Abstract
RMo2A-1: A 13-GHz Single Chip Front-End Module with 42% TX PAE and 2.2-dB RX Noise Figure in 0.15-μm E/D-mode GaAs pHEMT Technology For 6G Wireless Communications
Jungsik Kim, Kyung Pil Jung, Seung Hun Kim, Sungjae Oh, Seong-Kyun Kim, Dongjin Jung, Dae Young Lee
Jungsik Kim, Samsung Electronics
Samsung Electronics, Samsung Electronics, Samsung, Samsung Research, Samsung Electronics, Samsung Electronics Co., Ltd., Samsung Electronics
(10:10 - 10:30)
Abstract
RMo2A-2: A 13-GHz Harmonic Tuned Asymmetric Doherty Power Amplifier with Compact and Precise Matching Network for 6G Application
Seung Hun Kim, Kyung Pil Jung, Sungjae Oh, Jungsik Kim, Seong Kyun Kim, Dongjin Jung, Dongki Kim, Dae Young Lee
Seung Hun Kim, Samsung
Samsung, Samsung, Samsung, Samsung, Samsung, Samsung, Samsung, Samsung
(10:30 - 10:50)
Abstract
RMo2A-3: A Ku-Band 2-Stage Differential Doherty Power Amplifier with Compact Asymmetric Doherty Combiner Based on Virtual Stub in 0.15-μm GaAs pHEMT
Sungjae Oh, Seung Hun Kim, Kyung Pil Jung, Jungsik Kim, Hyeong Jin Kim, Seong-Kyun Kim, Dongjin Jung, Dongki Kim, Dae Young Lee
Sungjae Oh, Samsung Research
Samsung Research, Samsung, Samsung Research, Samsung Electronics, Samsung Research, Samsung Research, Samsung Electronics Co., Ltd., Samsung Electronics Co., Ltd., Samsung Research
(10:50 - 11:10)
Abstract
RMo2A-4: A High Power SOI-CMOS WI-FI 6 Front-End Module with Reconfigurable Class-J Power Amplifier
Pascal Reynier, Ayssar Serhan, Alexandre GIRY
Pascal Reynier, CEA-LETI
CEA-LETI, CEA-LETI, CEA-LETI
(11:10 - 11:30)
Abstract
RMo2A-5: An Ultra-Compact, >17 dBm POUT, >30% PAE, Single Transformer-Based Doherty PA in 28-nm CMOS FD-SOI for 5G FR2 UE AiP Products
Han-Woong Choi, Jongwon Yun, Jaeyeon Jeong, Iljin Lee, Geonho Park, Youngsub Kim, Hongmin Choi, Hyun-Chul Park, Chan-Hong Park
Han-Woong Choi, Samsung Semiconductor, Inc.
Samsung Semiconductor, Inc., Samsung Semiconductor, Inc., Samsung Semiconductor, Inc., Samsung Semiconductor, Inc., Samsung Semiconductor, Inc., Samsung Semiconductor, Inc., Samsung Semiconductor, Inc., Samsung Semiconductor, Inc., Samsung Semiconductor, Inc.
(11:30 - 11:50)
Alexandre SILIGARIS
CEA-LETI
Hamidreza AGHASI
Univ. of California, Irvine
Location
205
Abstract

This session presents recent advancements in voltage-controlled oscillator (VCO) design, covering innovations across sub-terahertz (sub-THz), millimeter-wave (mm-Wave), and microwave frequency bands. The first paper introduces a 60-GHz coupled standing-wave-oscillator LO distribution network, enabling a 240-GHz 2D phased array with area efficiency and robust performance. The second paper discusses a compact 190-GHz push-push Colpitts VCO in 130-nm BiCMOS, demonstrating high DC-to-RF efficiency and substantial output power. The third paper explores an image-reused phase-tuning quadrature VCO (QVCO), achieving a high figure-of-merit (FoM) through an innovative tuning technique at mm-Wave frequencies. Finally, a 13.8–16.2-GHz series-tank-assisted transformer-based oscillator is presented, offering excellent supply pushing characteristics and a competitive phase noise profile. These contributions highlight key innovations in VCO design across a wide range of frequencies, supporting advancements in next-generation communication, radar, and sensing applications.

Technical Papers
Abstract
RMo2B-1: A 60-GHz Area-efficient Coupled Standing-Wave-Oscillators LO Distribution Network for a 240-GHz 2-D Phased-Array
Ying-Han You, Pin-Yu Lin, Sih-Ying Chen, Wei-Yu Lin, Jun-Chau Chien
Wei-Yu Lin, Univ. of California, Berkeley
National Taiwan Univ., National Taiwan Univ., National Taiwan Univ., Univ. of California, Berkeley, Univ. of California, Berkeley
(10:10 - 10:30)
Abstract
RMo2B-2: A Compact 190 GHz Push-Push Colpitts VCO in 130-nm BiCMOS with 3.5%-DC-to-RF Efficiency and 3.9-dBm Peak Output Power
Hanlin Yang, Hao He, Jianbo Huang, Yi Liu, Zhou Shu, Howard Luong, KEVIN T. C. CHAI, Yongxin Guo
Hanlin Yang, National Univ. of Singapore
National Univ. of Singapore, National Univ. of Singapore, National Univ. of Singapore, Hong Kong Univ. of Science and Technology, National Univ. of Singapore, Hong Kong Univ. of Science and Technology, Institute of Microelectronics, City Univ. of Hong Kong
(10:30 - 10:50)
Abstract
RMo2B-3: An Image-Reused Phase-Tuning mm-Wave QVCO with a FoMT of -204 dBc/Hz
Yue Zhu, Yuri Lu, Chunqi Shi, Leilei Huang, Hao Deng, Jinghong Chen, Runxi Zhang
Yue Zhu, East China Normal Univ.
East China Normal Univ., East China Normal Univ., East China Normal Univ., East China Normal Univ., Univ. of Houston, Univ. of Houston, East China Normal Univ.
(10:50 - 11:10)
Abstract
RMo2B-4: A 580-μW 13.8–16.2-GHz Series-Tank-Assisted Transformer-Based Oscillator Achieving -188 dBc/Hz FoM and 50 MHz/V Supply Pushing
Sayan Kumar, Sumit Dash, Robert Staszewski, Teerachot SIRIBURANON
Sayan Kumar, Univ. College Dublin
Univ. College Dublin, Univ. College Dublin, Delft Univ. of Technology, Univ. College Dublin
(11:10 - 11:30)
Mohamed Elkhouly
Broadcom Corp.
Giuseppe Gramegna
IMEC
Location
207
Abstract

This session explores key mm-Wave building blocks and components. The first paper presents a 28–40 GHz phase shifter in 65-nm CMOS, achieving less than 0.4° RMS phase error, 0.31 dB RMS gain error, and a 31.5 dB gain tuning range. The second paper introduces a V-band FMCW transmitter featuring an impedance-invariant voltage gain amplifier phase shifter, also in 65-nm CMOS. The third paper showcases a 25–32 GHz frequency doubler with up to 32% efficiency and >39 dBc harmonic rejection, while the fourth paper reports a compact 24–31 GHz complex impedance sensor—both implemented in 22-nm FD-SOI. The session concludes with a C–X-band Wilkinson power divider/combiner utilizing a folded two-section mechanism in 65-nm bulk CMOS.

Technical Papers
Abstract
RMo2C-1: A 28–40 GHz 6-Bit Variable Gain Phase Shifter with <0.4°/<0.31 dB PS RMS Phase/Gain Errors and 31.5-dB Gain Tuning Range
Tao Zhang, Haohui Chen, Depeng Sun, Lisheng Chen, Ruixue Ding, Shubin Liu, Zhangming Zhu
Tao Zhang, Xidian Univ.
Xidian Univ., Xidian Univ., Xidian Univ., Xidian Univ., Xidian Univ., Xidian Univ., Xidian Univ.
(10:10 - 10:30)
Abstract
RMo2C-2: A V-band Transmitter Front-End IC for Phased-Array FMCW Radar with Impedance-Invariant Variable-Gain Phase Shifter
Mingyu Lee, Subin Lim, Euijin Oh, Goo-Han Ko, Si-Keuk Ryu, Eun-Taek Sung, Donghyun Baek, Jong-Ryul Yang, Seungchan Lee, Jinseok Park
Mingyu Lee, Chonnam National Univ.
Chonnam National Univ., Chonnam National Univ., Chonnam National Univ., Chung-Ang Univ., Chung-Ang Univ., ETRI, Chung-Ang Univ., Konkuk University, Chonnam National Univ., Chonnam National Univ.
(10:30 - 10:50)
Abstract
RMo2C-3: A Compact 25–32 GHz Frequency Doubler with up to 32% Efficiency and >39 dBc Harmonic Rejection in 22nm FDSOI
Mohammed Helal, Gabriel Rebeiz
Mohammed Helal, Univ. of California, San Diego
Univ. of California, San Diego, Univ. of California, San Diego
(10:50 - 11:10)
Abstract
RMo2C-4: A 24-31GHz Compact Low-Power Complex Impedance Sensor for Beamforming Transmitters in 22nm FD-SOI
Xuepu Wu, Yang Zhang, Giovanni Mangraviti, Rana ElKashlan, Dries Peumans, Piet Wambacq
Xuepu Wu, IMEC
IMEC, IMEC, IMEC, IMEC, Vrije Univ. Brussels, IMEC
(11:10 - 11:30)
Abstract
RMo2C-5: An Ultra-Compact and Broadband C–X-Band Wilkinson Power Divider/Combiner Using a Folded Two-Section Mechanism in 65-nm Bulk CMOS Technology
Jiazhi Ying, Zhiqiang Zhao, Yikun Wang, Kaiqiang Zhu, Houjun Sun
Jiazhi Ying, Beijing Institute of Technology
Beijing Institute of Technology, Beijing Institute of Technology, Beijing Institute of Technology, Beijing Institute of Technology, Beijing Institute of Technology
(11:30 - 11:50)

-

Salvatore Finocchiaro, Travis Forbes
QORVO, Inc., Sandia National Laboratories
Kenichi Okada, Ryan Jennings, John Cowles, Adrian Tang, Will Craven
Institute of Science Tokyo, QORVO, Inc., Analog Devices, NASA’s Jet Propulsion Lab, Maxar Space Infrastructure
Location
301
Abstract

Large corporations are investing billions of dollars building thousands of LEO satellites to offer broadband internet services to rural and under-developed areas. In addition, many countries are jumping onto this wagon to secure their own access to the internet as part of a national security policy. On the other hand, the high satellite launch cost, hardware cost, and high monthly subscription fees do not seem to fit the objective of providing broadband access to the general earth population, many of whom are living in poverty. Come join the panel and find out if this is expensive space junk or a revolution in broadband internet access.

-

Bichoy Bahr
Texas Instruments
Steven Turner
BAE Systems
Location
203
Abstract

This session demonstrates frequency generation in advanced FinFET CMOS and SiGe BiCMOS technologies. The first two papers present fractional-N PLLs from 13.5 GHz to 23 GHz in 5-nm and 8-nm FinFET technologies respectively. The third paper presents a distributed power-combining frequency doubler for H-band frequencies in SiGe BiCMOS. The session concludes with a circuit-under-inductor demonstration for VCOs and PAs in 6-nm and 16-nm technologies respectively.

Technical Papers
Abstract
RMo3A-1: A 13.5 to 23GHz compact PLL based on a 0.006mm² transformer-based dual-resonator tuned LC VCO in 5nm CMOS
Armagan Dascurcu, Bodhisatwa SADHU, Herschel Ainspan, Gary Kurtzman, John Borkenhagen, Zheng Xu, Jim Strom
Armagan Dascurcu, IBM T.J. Watson Research Center
IBM T.J. Watson Research Center, IBM T.J. Watson Research Center, IBM T.J. Watson Research Center, IBM Systems Group, IBM Systems Group, IBM Systems Group, IBM Systems Group
(13:30 - 13:50)
Abstract
RMo3A-2: A 16-22 GHz Fractional-N PLL in 8nm FinFET with 68 fsrms Jitter
Wanghua WU, Zhiyu Chen, Kyumin Kwon, Suoping Hu, Pak-Kim Lau, Changhun Song, Ali Binaie, Santosh Kumpatla, Juyeop Kim, Jeiyoung Lee, Chih-Wei Yao, Sangwon Son, Joonhoi Hur
Wanghua WU, Samsung Semiconductor, Inc.
Samsung Semiconductor, Inc., Samsung Semiconductor, Inc., Samsung Semiconductor, Inc., Samsung Semiconductor, Inc., Samsung Semiconductor, Inc., Samsung Semiconductor, Inc., Samsung Semiconductor, Inc., Samsung Semiconductor, Inc., Samsung Semiconductor, Inc., Samsung Electronics Co., Ltd, Samsung Semiconductor, Inc., Samsung Semiconductor, Inc., Samsung Semiconductor, Inc.
(13:50 - 14:10)
Abstract
RMo3A-3: A 210-320GHz Power-Combining Distributed Frequency Doubler with Tuned Pre-amplification in 0.13µm SiGe BiCMOS
Akshay Visweswaran, Yves Baeyens, Mustafa Sayginer, Hernan Castro, Ayush Rai, Shahriar Shahramian
Akshay Visweswaran, Nokia-Bell Labs
Nokia-Bell Labs, Nokia-Bell Labs, Nokia-Bell Labs, Nokia-Bell Labs, Nokia-Bell Labs, Nokia-Bell Labs
(14:10 - 14:30)
Abstract
RMo3A-4: Design Technology Co-optimization for RF/mmWave Circuits with Circuit under Inductor (CUI) in FinFET CMOS Technologies
Hsieh-Hung Hsieh, Wei-Ling Chang, Kai-Chun Chang, Wen-Sheng Chen, Yen-Jen Chen, Tzu-Jin Yeh, Shenggao Li, Shih-Hsien Yang, Hua-Chou Tseng, Cho-Ying Lu, Hwa-Yu Yang, Guo-Wei Huang
Hsieh-Hung Hsieh, Taiwan Semiconductor Manufacturing Co., Ltd.
Taiwan Semiconductor Manufacturing Co., Ltd., Taiwan Semiconductor Manufacturing Co., Ltd., Taiwan Semiconductor Manufacturing Co., Ltd., Taiwan Semiconductor Manufacturing Co., Ltd., Taiwan Semiconductor Manufacturing Co., Ltd., Taiwan Semiconductor Manufacturing Co., Ltd., Taiwan Semiconductor Manufacturing Co., Ltd., Taiwan Semiconductor Manufacturing Co., Ltd., Taiwan Semiconductor Manufacturing Co., Ltd., Taiwan Semiconductor Manufacturing Co., Ltd., Taiwan Semiconductor Manufacturing Co., Ltd., Taiwan Semiconductor Research Institute
(14:30 - 14:50)
Swaminathan Sankaran
Texas Instruments
Shahriar Shahramian
Bell Labs
Location
205
Abstract

The millimeter-wave (mm-Wave) frontier continues to advance across mainstream Si and III-V-based circuits, achieving excellent performance with enhanced functionality. This session presents a diverse set of circuits and front-ends that push the boundaries of bi-directionality, bandwidth, linearity, and sensitivity. The first paper introduces a GaAs pHEMT low-noise amplifier (LNA) with a sub-3dB noise figure (NF) and wideband operation. The second paper features a 28-nm CMOS dual-band LNA designed for 5G applications, offering low power consumption and NF. Next, a 40-nm CMOS V-band wideband absorptive receiver with enhanced out-of-band linearity for 5G is presented. The session concludes with a 65-nm CMOS bi-directional beamforming front end, leveraging distributed impedance reshaping.

Technical Papers
Abstract
RMo3B-1: A 15-50 GHz LNA With 2.4 dB NF and 25.4±1.4 dB Gain In 0.15 um GaAs pHEMT Process
Nengyuan Zhong, Yao Li, Shiwei Hu, Chenhao Gao, Xiang Wang, Yanjie Wang
Nengyuan Zhong, South China Univ. of Technology
South China Univ. of Technology, South China Univ. of Technology, South China Univ. of Technology, South China Univ. of Technology, Nanjing Univ. of Science and Technology, South China Univ. of Technology
(13:30 - 13:50)
Abstract
RMo3B-2: Design of 22.6-29.5/ 30.4-43.5 GHz Dual-Band Low Power LNA with 2.6-3.8 dB NF for Millimeter-Wave 5G Applications in 28-nm CMOS
Haitao Lin, Li Gao, Xinyang Liu, Xiu Yin Zhang
Haitao Lin, South China Univ. of Technology
South China Univ. of Technology, South China Univ. of Technology, Sanechips Co., Ltd., South China Univ. of Technology
(13:50 - 14:10)
Abstract
RMo3B-3: A 50-68GHz IF Absorptive Receiver with 8-GHz IF-Bandwidth Supporting 16-Channel Carrier-Aggregation and 12Gbps-64QAM Modulation For 5G NR FR2-2 Application
Aoran Han, Qingxian Li, Jie Zhou, Xun Luo
Aoran Han, Univ. of Electronic Science and Technology of China
Univ. of Electronic Science and Technology of China, Univ. of Electronic Science and Technology of China, Univ. of Electronic Science and Technology of China, Univ. of Electronic Science and Technology of China
(14:10 - 14:30)
Abstract
RMo3B-4: A 22-to-50 GHz Bi-directional Beamforming CMOS Front-end with Distributed Impedance Reshaping Technique for 5G NR FR2 Applications
Weiqi Zheng, Wei Deng, Junlong Gong, Haikun Jia, Dongze Li, Hongliang Wu, Baoyong Chi
Weiqi Zheng, Tsinghua Univ.
Tsinghua Univ., Tsinghua Univ., Tsinghua Univ., Tsinghua Univ., Tsinghua Univ., Tsinghua Univ., Tsinghua Univ.
(14:30 - 14:50)
Emily Naviasky
IBM T.J. Watson Research Center
Antoine Frappé
Univ. of Lille
Location
207
Abstract

This session will cover the latest developments on high-speed ADCs, introducing time-interleaving, mismatch calibration and spur mitigation techniques. Machine learning circuits are also discussed for ADC calibration. Finally, the session closes on an ADC integrating mixed-signal multiplication stage for beamforming applications.

Technical Papers
Abstract
RMo3C-1: A 40GS/s 8bit Time-Interleaved Time-Domain ADC Featuring SFDR-Enhanced Sample-and-Hold Circuit and Power-Efficient Adaptive Pulse Generator in 28nm CMOS
Chenghao Zhang, maliang liu, Yuan Chang, Yihang Yang, Yintang Yang, Yong Chen
Chenghao Zhang, Xidian Univ.
Xidian Univ., Xidian Univ., Xidian Univ., Xidian Univ., Xidian Univ., Tsinghua Univ.
(13:30 - 13:50)
Abstract
RMo3C-2: A 12-Bit 6-GS/s Time-Interleaved SAR ADC with On-Chip Mismatch Calibration in 28nm CMOS Technology
Sebastian Linnhoff, Frowin Buballa, Michael Reinhold, Rene Spanl, Erik Sippel, Friedel Gerfers
Sebastian Linnhoff, Technische Univ. Berlin
Technische Univ. Berlin, Technische Univ. Berlin, Robert Bosch GmbH, Robert Bosch GmbH, Friedrich-Alexander-Univ. Erlangen-Nürnberg, Technische Univ. Berlin
(13:50 - 14:10)
Abstract
RMo3C-3: Mostly Digital, Calibration-Free, Band-Pass Delta-Sigma Modulator using Dual Time-Interleaved Noise-Shaping SAR ADCs
Matt Kinsinger, Anoop Bengaluru, Jia-Ching Chuang, Sumukh Bhanushali, Arindam Sanyal
Matt Kinsinger, Arizona State Univ.
Arizona State Univ., Arizona State Univ., Arizona State Univ., Arizona State Univ., Arizona State Univ.
(14:10 - 14:30)
Abstract
RMo3C-4: Circuits-Informed Machine Learning Technique for Blind Open-Loop Digital Calibration of SAR ADC
Sumukh Bhanushali, Debnath Maiti, Phaneendra Bikkina, Esko Mikkola, Arindam Sanyal
Sumukh Bhanushali, Arizona State Univ.
Arizona State Univ., Arizona State Univ., Alphacore Inc,, Alphacore Inc,, Arizona State Univ.
(14:30 - 14:50)
Abstract
RMo3C-5: A 17 mW 8-Element 2-Beam Hybrid Slepian Beamforming Receiver with SAR-ADC-Based Charge-Domain Multiply and Accumulation
Zhengqi Xu, Zhiyuan Zhao, Michael Laun, Coleman DeLude, Justin Romberg, Michael Flynn
Zhengqi Xu, Univ. of Michigan
Univ. of Michigan, Univ. of Michigan, Univ. of Michigan, Georgia Institute of Technology, Georgia Institute of Technology, Univ. of Michigan
(14:50 - 15:10)

-

Ahmed Abdellatif, Laila Salman
Microchip, Ansys
Location
201
Abstract

As data-rates continue to rise and system complexity increases, maintaining robust signal integrity (SI) has become a critical challenge in next-generation high-speed systems. Applications in Artificial Intelligence (AI) and cloud computing are driving the demand for higher data throughput and increasingly complex interconnect designs. To meet this demand while maintaining reasonable power consumption, advanced nodes like 3nm and associated packaging technologies, such as chiplets, are being employed — introducing additional signal integrity (SI) challenges. This workshop will address key broadband SI challenges and offer cutting-edge solutions for mitigating impairments like inter-symbol interference (ISI), crosstalk, and discontinuities across a broad frequency spectrum. Participants will also explore modeling and analyzing interconnects and transitions for broadband applications using integral equation (IE) methods, a crucial tool for accurately modeling signal behavior in advanced packaging and PCB designs. The workshop will cover the fundamentals, state-of-the-art techniques, and ongoing challenges of applying these methods to broadband SI analysis in high-speed systems. In addition to signal integrity, power integrity (PI) is an equally critical factor, particularly as emerging AI and cloud computing systems require thousands of amps to be delivered to high-speed digital designs. A specialized talk will address power integrity challenges in multi-die packages, AI chips, and cloud servers, focusing on digital twin PI simulations to mitigate hardware failures. Participants will gain insight into the complexities of end-to-end power delivery networks, voltage regulators, and power integrity digital twins for next-gen systems. The workshop will also build on modeling broadband interconnects, culminating in comprehensive models for packaging and PCB designs using finite element method (FEM) and IE methods. A case study on Rigid-Flex PCB modeling up to 100GHz will be presented, with an in-depth discussion of the challenges encountered. Once the broadband channel model (comprising the package, PCB, and connectors) is established, the workshop will explore the need for spectrally efficient modulation schemes (eg PAM-4) and digital equalization techniques to overcome channel impairments for data-rates exceeding 200Gb/s. With rising data center cooling costs, energy-efficient digital equalization has become a crucial research area. This talk will provide an overview of the evolution, current landscape, and future trends in digital equalization for high-speed links. As background, our IEEE Ottawa AP-S/MT-S chapter recently launched an MTT-sponsored Signal Integrity course in the Kanata tech area, which has been extremely successful among both students and professionals. The course was fully booked, and demand continues to grow, underscoring the importance of providing high-quality content in the signal integrity field.

Technical Papers
Abstract
WMP-1: Fundamentals of Signal Integrity for High-Speed Applications and Advances in Packaging Technology
Ahmed Abdellatif, Sameh Elnaggar
Ahmed Abdellatif, Microchip
Microchip, Royal Military College of Canada
(13:30 - 17:20)
Abstract
WMP-2: Integral Equation Methods for the Electromagnetic Analysis of Interconnect Networks: Fundamentals, State-of-the-Art, and Open Challenges
Piero Triverio
Piero Triverio, Univ. of Toronto
Univ. of Toronto
(13:30 - 17:20)
Abstract
WMP-3: An Overview of Equalization Techniques for Serial Communication Channels
Cristian Filip
Cristian Filip, Intel
Intel
(13:30 - 17:20)
Abstract
WMP-4: Design Challenges and Considerations for Reliable Rigid-Flex PCB up to 100GHz
Juliano Mologni, Laila Salman
Juliano Mologni, Ansys
Ansys, Ansys
(13:30 - 17:20)
Abstract
WMP-5: System Simulation and Modeling for Broadband Applications
Masum Hossain
Masum Hossain, Carleton Univ.
Carleton Univ.
(13:30 - 17:20)
Abstract
WMP-6: Digital Twin PI Simulations for 2000 Amp AI, Cloud Compute, and Multi-Die Packages
Heidi Barnes
Heidi Barnes, Keysight Technologies
Keysight Technologies
(13:30 - 17:20)
Nicholas Miller, Gian Piero Gibiino
Michigan State Univ., Univ. of Bologna
Location
204
Abstract

Gallium nitride (GaN) high electron mobility transistors (HEMTs) continue to play a critical role in numerous RF applications including communications, satellite communications, radar, and electronic warfare. The GaN technology development cycle has always been critically reliant on measurements to characterize the transistors and provide precise data for device process engineers, modeling engineers, as well as for circuit and system designers. New variants of GaN HEMTs, often designed for specific applications, will continue to require both established and advanced measurement techniques — particularly tests that characterize the transistor in application-like environments. It is, therefore, critical to understand the landscape in terms of microwave measurements specific to characterizing GaN HEMT technologies for their use cases. This half-day workshop will assemble an international group of experts in the field of advanced RF measurements to present the latest research from MHz to THz techniques. This proposed workshop will enable an inclusive, international audience and will welcome open discussions on the technical aspects of the presentations.

Technical Papers
Abstract
WMQ-1: Advanced Measurement Techniques and Comprehensive Analysis of Trapping and Thermal Effects in GaN-Based HEMTs
Raphaël Sommet
Raphaël Sommet, XLIM (UMR 7252)
XLIM (UMR 7252)
(13:30 - 17:20)
Abstract
WMQ-2: Characterizing Low-Frequency Memory Effects using RF Real-Time NVNA Measurements
Patrick Roblin, Miles Lindquist
Patrick Roblin, The Ohio State University
The Ohio State University, The Ohio State University
(13:30 - 17:20)
Abstract
WMQ-3: Advanced GaN HEMT Characterization and Modeling Techniques
Valeria Vadalà, Antonio Raffo
Valeria Vadalà, Università di Milano-Bicocca
Università di Milano-Bicocca, Università di Ferrara
(13:30 - 17:20)
Abstract
WMQ-4: Characterization and Modeling of Trapping Effects in AlGaN/GaN HEMTs for Predicting Power Amplifier Linearization
Luís C. Nunes
Luís C. Nunes, Universidade de Aveiro
Universidade de Aveiro
(13:30 - 17:20)
Abstract
WMQ-5: Characterization Techniques Tailored to GaN Devices for Communication Applications
Alberto Maria Angelotti, Gian Piero Gibiino
Alberto Maria Angelotti, Univ. of Bologna
Univ. of Bologna, Univ. of Bologna
(13:30 - 17:20)
Abstract
WMQ-6: Broadband Characterization of mm-Wave GaN HEMTs Beyond 100GHz
Nicholas Miller
Nicholas Miller, Michigan State Univ.
Michigan State Univ.
(13:30 - 17:20)
Taylor Barton, Roberto Quaglia
University of Colorado Boulder, Cardiff University
Location
206
Abstract

The load modulated balanced amplifier (LMBA) architecture has received considerable attention due to its great potential for efficiency and bandwidth enhancement. Many variations on the architecture have been proposed: LMBA vs. SLMBA vs OLMBA, single-input vs. dual input, frequency-reconfigurable vs. broadband, hybrid vs. MMIC, and so on. The aim of this workshop is to describe this broad design space and help provide guidance on how to find the right LMBA solution for a particular application. After a general introduction to the technique, individual presenters will focus on a specific variant and how its design, operation, and performance compares to the baseline architecture.

Technical Papers
Abstract
WMR-1: LMBA Basics
Roberto Quaglia
Roberto Quaglia, Cardiff University
Cardiff University
(13:30 - 17:20)
Abstract
WMR-2: Orthogonal and Re-Injection LMBA for Frequency Agile PAs
Roberto Quaglia
Roberto Quaglia, Cardiff University
Cardiff University
(13:30 - 17:20)
Abstract
WMR-3: Broadband High Efficiency S-LMBA Design
Anding Zhu
Anding Zhu, Univ. College Dublin
Univ. College Dublin
(13:30 - 17:20)
Abstract
WMR-4: Signal-Flow-Based Analysis and Design of LMBA
Kenle Chen
Kenle Chen, Univ. of Central Florida
Univ. of Central Florida
(13:30 - 17:20)
Abstract
WMR-5: Digital Control and Linearization of High-Efficiency LMBAs
Pere Gilabert
Pere Gilabert, Univ. Politècnica de Catalunya
Univ. Politècnica de Catalunya
(13:30 - 17:20)
Abstract
WMR-6: MMIC LMBA Design
Taylor Barton
Taylor Barton, University of Colorado Boulder
University of Colorado Boulder
(13:30 - 17:20)

-

Aritra Banerjee
Univ. of Illinois at Chicago
Andrea Mazzanti
Univ. of Pavia
Location
203
Abstract

This session presents five papers on transmitters operating beyond 100 GHz. The first paper introduces a direct-digital transmitter in the D-band using RF-DACs for RF-domain modulation. The second and third papers explore an oversampling four-channel digital-to-phase transmitter and a reconfigurable quadrature second-harmonic modulator in the D-band. The fourth paper presents a 200 GHz doubler-last phased array transmitter in SiGe technology. Finally, the session concludes with an amplifier-last transmitter operating from 270 to 300 GHz in a 130 nm SiGe BiCMOS process.

Technical Papers
Abstract
RMo4A-1: A D-Band Direct-Modulation 64-QAM Transmitter with On-Chip Digital Calibration in 16nm FinFET Technology
Runzhou Chen, Hao-Yu Chien, Chao-Jen Tien, Hong-Shen Chen, Hsieh-Hung Hsieh, Tzu-Jin Yeh, Mau-Chung Frank Chang
Runzhou Chen, Univ. of California, Los Angeles
Univ. of California, Los Angeles, Univ. of California, Los Angeles, Univ. of California, Los Angeles, Taiwan Semiconductor Manufacturing Co., Ltd., Taiwan Semiconductor Manufacturing Co., Ltd., Taiwan Semiconductor Manufacturing Co., Ltd., Univ. of California, Los Angeles
(15:40 - 16:00)
Abstract
RMo4A-2: A 110 to 122-GHz Four-Channel Oversampling Digital-to-Phase Transmitter for Scalable, Energy-Efficient Arrays
Justin Kim, Alex Dinkelacker, Jeff Shih-Chieh Chien, James Buckwalter
Justin Kim, Univ. of California, Santa Barbara
Univ. of California, Santa Barbara, Univ. of California, Santa Barbara, Univ. of California, Santa Barbara, Univ. of California, Santa Barbara
(16:00 - 16:20)
Abstract
RMo4A-3: A 45 Gb/s D-band Hybrid Star-QAM-OOK Transmitter Using a Quad-Harmonic Modulator with Constant Impedance Balanced Architecture in 90nm SiGe BiCMOS
Haoling Li, Najme Ebrahimi
Haoling Li, Northeastern University
Northeastern University, Northeastern University, Boston
(16:20 - 16:40)
Abstract
RMo4A-4: A 200-GHz Phased Array Transmitter with Element-Level Scanning Antenna for ± 45° Scanning Range with 0.71 λ0 Antenna Pitch
Si-Yuan Tang, Peigen Zhou, Rui Zhou, Rui Zhang, Zongxiang Wang, Dawei Tang, Long Wang, Xiaoyue Xia, Wentao Zhu, Jirui Li, Jinben Li, Pinpin Yan, hao gao, Jixin Chen, wei hong
Si-Yuan Tang, Southeast Univ.
Southeast Univ., Southeast Univ., Southeast Univ., Southeast Univ., Southeast Univ., Southeast Univ., Southeast Univ., Southeast Univ., Southeast Univ., Southeast Univ., Southeast Univ., Southeast Univ., Southeast Univ., Southeast Univ., Southeast Univ.
(16:40 - 17:00)
Abstract
RMo4A-5: A 270-to-300 GHz Amplifier-Last Transmitter With 6.7 dBm Peak Output Power Using 130 nm SiGe Process
Peigen Zhou, Jixin Chen, Jiayang Yu, Zuojun Wang, Zhe Chen, Hao Gao, Wei Hong
Peigen Zhou, Southeast Univ.
Southeast Univ., Southeast Univ., Southeast Univ., Southeast Univ., Southeast Univ., Southeast Univ., Southeast Univ.
(17:00 - 17:20)
Hsieh-Hung Hsieh
Taiwan Semiconductor Manufacturing Co., Ltd.
Ying Chen
Samsung Semiconductor, Inc.
Location
205
Abstract

In this session, RF/mmWave low-noise amplifiers (LNAs) and frontend modules (FEMs) are presented. Different design techniques to achieve high circuit performance in terms of wide bandwidth, low noise, high output power, and superior PAE are proposed. For the first paper, a 23-40 GHz LNA with a dual-path noise-cancelling technique is demonstrated. The second paper is an LNA operating at V and E frequency bands with a three-line coupler to provide wide-band noise and power matching. The third paper presents a sub-10GHz RF frontend module composed of a digital PA with a 4-way balanced power combining network and an LNA with a dual-resonant input matching approach. For the fourth paper, a wideband bidirectional switchless PA-LNA with 8-shaped transformers for W frequency bands is proposed. The final paper is a 24–30 GHz GaN-on-SiC FEM with a 37.1-dBm output power and 34.4% PAE.

Technical Papers
Abstract
RMo4B-1: A 23–40 GHz Compact LNA with Dual-Path Noise-Cancelling Technology Enabled by a Quad-Coil Coupled Transformer
Yongchun Li, Taotao Xu, Pei Qin, Quan Xue, Wenquan Che
Yongchun Li, South China Univ. of Technology
South China Univ. of Technology, South China Univ. of Technology, South China Univ. of Technology, South China Univ. of Technology, South China Univ. of Technology
(15:40 - 16:00)
Abstract
RMo4B-2: A 3.23dB Average NF and 2.32dB Minimum NF V-/E-Band Common-Gate/Common-Source Joint-Feeding LNA with Three-Line Coupler Input Matching for Simultaneous Noise/Power Matching
Boce Lin, Niccolò Villaggi, Tzu-Yuan Huang, Hua Wang
Boce Lin, ETH Zurich
ETH Zurich, ETH Zurich, ETH Zurich, ETH Zurich
(16:00 - 16:20)
Abstract
RMo4B-3: A 22-nm CMOS 3.5-7.2 GHz Wideband FEM with a Balanced-Power-Combining DPA and a Dual-Resonant Input Matching LNA
Kangjie Zhao, Can Liu, Linfeng Zou, Kai Liu, Yuan Xu, Xinyi Jiang, Ruilai Xu, Wangdong Xie, Yang Zhou, Hao Deng, Leilei Huang, Chunqi Shi, Lei Chen, Jinghong Chen, Runxi Zhang
Kangjie Zhao, East China Normal Univ.
East China Normal Univ., East China Normal Univ., East China Normal Univ., East China Normal Univ., East China Normal Univ., East China Normal Univ., East China Normal Univ., East China Normal Univ., East China Normal Univ., Univ. of Houston, East China Normal Univ., East China Normal Univ., Shanghai University of Electric Power, Univ. of Houston, East China Normal Univ.
(16:20 - 16:40)
Abstract
RMo4B-4: An Ultra-Compact Switchless Bidirectional PA-LNA with 8-Shaped Transformer-Based Inter-stage Matching Networks for W-Band Applications
Lingtao Jiang, Lihong Chen, Xianfeng Que, Quan Xue, Yanjie Wang
Yanjie Wang, South China Univ. of Technology
South China Univ. of Technology, South China Univ. of Technology, South China Univ. of Technology, South China Univ. of Technology, South China Univ. of Technology
(16:40 - 17:00)
Abstract
RMo4B-5: A 24–30 GHz GaN-on-SiC T/R Front-End Module with 37.1-dBm Output Power and 34.4% PAE
Cheng-Jie Hu, Hui-Yang Li, Jin-Xu Xu, Run-Feng Chen, Jun-Ming Zhu, Xiu Yin Zhang
Cheng-Jie Hu, South China Univ. of Technology
South China Univ. of Technology, South China Univ. of Technology, South China Univ. of Technology, South China Univ. of Technology, South China Univ. of Technology, South China Univ. of Technology
(17:00 - 17:20)
Yao-Hong Liu
IMEC
Pierluigi Nuzzo
Univ. of California, Berkeley
Location
207
Abstract

This session showcases the latest advances in energy-efficient and high-linearity IoT RFIC design. The first paper presents a backscatter communication IC achieving high modulation order and strong sideband suppression. The session then features a next-generation 5G wake-up receiver leveraging multi-carrier OOK modulation for low-power and high-sensitivity IoT applications, followed by a harmonic-suppressing low-power receiver design. A novel scaling-friendly time-domain technique is introduced to enhance the linearity of an energy-efficient receiver. Finally, a fully integrated galvanic isolator achieves low power for asynchronous full-duplex communication.

Technical Papers
Abstract
RMo4C-1: A Single-Side-Band Frequency Translated 64-QAM Backscatter Communication IC with Phase-Rotation Time-Variant Reflector and LUT-Based Digital Predistortion
Shuangfeng Kong, Fengjun Chen, Zhiqiang Huang
Shuangfeng Kong, The Hong Kong University of Science and Technology (Guangzhou)
The Hong Kong University of Science and Technology (Guangzhou), The Hong Kong University of Science and Technology (Guangzhou), The Hong Kong University of Science and Technology (Guangzhou)
(15:40 - 16:00)
Abstract
RMo4C-2: A 742µW -94.5dBm Sensitivity 5G-NR Wake-Up Receiver
Siyu Wang, David Wentzloff
Siyu Wang, Univ. of Michigan
Univ. of Michigan, Univ. of Michigan
(16:00 - 16:20)
Abstract
RMo4C-3: A Harmonic-Suppressing Gain-Boosted N-Path Receiver with Clock Bootstrapping for IoT Applications
Soroush Araei, Mohammad Barzgari, Haibo Yang, Negar Reiskarimian
Soroush Araei, Massachusetts Institute of Technology
Massachusetts Institute of Technology, Massachusetts Institute of Technology, Massachusetts Institute of Technology, Massachusetts Institute of Technology
(16:20 - 16:40)
Abstract
RMo4C-4: A 1.9-4 GHz Receiver with Enhanced In-band and Out-of-band Linearity using Double Sampling and Time-domain Processing
Sreeni Poolakkal, Dipan Kar, Arpit Rao, Daniel Mazidi, Praveen Kumar Venkatachala, Subhanshu GUPTA
Sreeni Poolakkal, Washington State Univ.
Washington State Univ., Washington State Univ., Washington State Univ., Washington State Univ., Skyworks Solutions, Inc., Washington State Univ.
(16:40 - 17:00)
Abstract
RMo4C-5: A 5.75 mW Fully-Integrated Galvanic Isolator for Gate Drivers with Asynchronous 66.7/66.7 Mb/s Full-Duplex Communication
Lucrezia Navarin, Karl Norling, Marco Parenzan, Alexander Uran, Stefano Ruzzu, Krithika Rathinam, Andrea Neviani, Andrea Bevilacqua
Lucrezia Navarin, Univ. of Padova
Univ. of Padova, Infineon Technologies, Infineon Technologies, Infineon Technologies, Infineon Technologies, Infineon Technologies, Univ. of Padova, Univ. of Padova
(17:00 - 17:20)