Technical Sessions

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Ali Niknejad
Univ. of California, Berkeley
Location
160ABC
Abstract
This educational event will be part of the Sunday program for the first time in 2019. The inaugural Technical Lecture will be a 1.5 hour tutorial on Fundamentals of mm-wave IC design in CMOS held by Prof. Ali Niknejad, University of California, Berkeley

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Edmund Balboni
Analog Devices
Domine Leenaerts
NXP Semiconductors
Location
252AB
Abstract
Papers in this session deal with low-noise amplifiers and RF switches in both CMOS and SiGe technology. First, millimeter-wave LNAs which employ new techniques for tunability and improved stability will be presented. Second, microwave and millimeter-wave switches which achieve high performance in a compact area will be presented. 
Technical Papers
Abstract
RMo1A-1: A 1.2–2.8GHz Tunable Low-Noise Amplifier with 0.8–1.6dB Noise Figure
Hao Gao, Zhe Song, Zhe Chen, Domine M.W. Leenaerts, Peter G.M. Baltus
Hao Gao, Technische Universiteit Eindhoven
(08:00 - 08:20)
Abstract
RMo1A-2: A 28-GHz CMOS LNA with Stability-Enhanced Gm-Boosting Technique Using Transformers
Sunwoo Kong, Hui-Dong Lee, Seunghyun Jang, Jeehoon Park, Kwang-Seon Kim, Kwang-Chun Lee
Sunwoo Kong, ETRI
(08:20 - 08:40)
Abstract
RMo1A-3: Ka-Band CMOS Absorptive SP4T Switch with One-Third Miniaturization
Bosung Suh, Byung-Wook Min
Bosung Suh, Yonsei Univ.
(08:40 - 09:00)
Abstract
RMo1A-4: A Compact, High-Power, 60GHz SPDT Switch Using Shunt-Series SiGe PIN Diodes
Yunyi Gong, Jeffrey W. Teng, John D. Cressler
Yunyi Gong, Georgia Tech
(09:00 - 09:20)
Alvin Joseph
GLOBALFOUNDRIES
Edward Preisler
TowerJazz
Location
254AB
Abstract
This session will first present an antenna module at D-band showcasing low-cost and high-gain. Second, characterization and modeling of high-speed Schottky diodes will be discussed. The final three papers will cover aspects of 22nm FDSOI technologies, including LNAs and PAs.
Technical Papers
Abstract
RMo1B-1: Low-Cost, High-Gain Antenna Module Integrating a CMOS Frequency Multiplier Driver for Communications at D-Band
José Luis Gonzalez-Jimenez, Antonio Clemente, Alexandre Siligaris, Benjamin Blampey, Cedric Dehos
Francesco Foglia Manzillo, CEA-LETI
(08:00 - 08:20)
Abstract
RMo1B-2: Scalable Analytical Model of 1.7THz Cut-Off Frequency Schottky Diodes Integrated in 55nm BiCMOS Technology
Vincent Gidel, Frédéric Gianesello, Pascal Chevalier, Grégory Avenier, Nicolas Guitard, Victor Milon, Michel Buczko, Charles-Alex Legrand, Cyril Luxey, Guillaume Ducournau
Vincent Gidel, STMicroelectronics
(08:20 - 08:40)
Abstract
RMo1B-3: Excellent 22FDX Hot-Carrier Reliability for PA Applications
T. Chen, Chi Zhang, W. Arfaoui, Abdellatif Bellaouar, S. Embabi, G. Bossu, M. Siddabathula, K.W.J. Chew, S.N. Ong, M. Mantravadi, K. Barnett, J. Bordelon, R. Taylor, S. Janardhanan
T. Chen, GLOBALFOUNDRIES
(08:40 - 09:00)
Abstract
RMo1B-4: 22nm Fully-Depleted SOI High Frequency Noise Modeling up to 90GHz Enabling Ultra Low Noise Millimetre-Wave LNA Design
L.H.K. Chan, S.N. Ong, W.L. Oo, K.W.J. Chew, Chi Zhang, Abdellatif Bellaouar, W.H. Chow, T. Chen, R. Rassel, J.S. Wong, C.K. Lim, C.W.F. Wan, J. Kim, W.H. Seet, David L. Harame
L.H.K. Chan, GLOBALFOUNDRIES
(09:00 - 09:20)
Abstract
RMo1B-5: 22nm Ultra-Thin Body and Buried Oxide FDSOI RF Noise Performance
Ousmane M. Kane, Luca Lucci, Pascal Scheiblin, Sylvie Lepilliet, François Danneville
Ousmane M. Kane, CEA-LETI
(09:20 - 09:40)
Shahriar Shahramian
Nokia Bell Labs
Jane Gu
Univ. of California, Davis
Location
257AB
Abstract
This session presents a diverse set of mm-wave radar systems for automotive and imaging applications at various integration levels implemented in advanced CMOS and SiGe BiCMOS technologies. The presented papers include a fully integrated 77 GHz SoC radar chipset, a multimodal 60 GHz radar transmitter, a 94 GHz 2 x 2 phased-array transceiver, a four channel X/Ku-Band TX/RX radar, and a broadband reconfigurable front-end transmitter IC.
Technical Papers
Abstract
RMo1C-1: A 76–81GHz FMCW Transceiver with 3-Transmit, 4-Receive Paths and 15dBm Output Power for Automotive Radars
Zongming Duan, Bowen Wu, Yan Wang, Bingbing Liao, Dong Huang, Yanhui Wu, Daiguo Xu, Hua Xu, Wei Lv, Yuefei Dai, Pei Li, Yan Wang, Fujiang Lin
Dongfang Pan, USTC
(08:00 - 08:20)
Abstract
RMo1C-2: Reconfigurable 60-GHz Radar Transmitter SoC with Broadband Frequency Tripler in 45nm SOI CMOS
Wooram Lee, Tolga Dinc, Alberto Valdes-Garcia
Wooram Lee, IBM T.J. Watson Research Center
(08:20 - 08:40)
Abstract
RMo1C-3: A 94GHz 2×2 Phased-Array FMCW Imaging Radar Transceiver with 11dBm Output Power and 10.5dB NF in 65nm CMOS
Dong Huang, Li Zhang, Huabing Zhu, Boshen Chen, Yang Tang, Yan Wang
Yan Wang, Tsinghua Univ.
(08:40 - 09:00)
Abstract
RMo1C-4: X/Ku-Band Four-Channel Transmit/Receive SiGe Phased-Array IC
Prabir Saha, Sriram Muralidharan, Jinzhou Cao, Ozan Gurbuz, Christopher Hay
Prabir Saha, Analog Devices
(09:00 - 09:20)
Abstract
RMo1C-5: Ultra-Wideband 8–45GHz Transmitter Front-End for a Reconfigurable FMCW MIMO Radar
Mantas Sakalas, Songhui Li, Niko Joram, Paulius Sakalas, Frank Ellinger
Mantas Sakalas, Technische Universität Dresden
(09:20 - 09:40)

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Ruonan Han
MIT
Abdellatif Bellaouar
GLOBALFOUNDRIES
Location
252AB
Abstract
This session presents 5G and millimeter-wave beamforming RFICs with a focus on high-precision phase shifters and variable-gain amplifiers. The operational frequency range extends from 20 GHz to 60 GHz with sub-degree RMS phase errors. These circuits are critical building blocks for realizing next-generation 5G communication systems.
Technical Papers
Abstract
RMo2A-1: A 51.5–64.5GHz Active Phase Shifter Using Linear Phase Control Technique with 1.4° Phase Resolution in 65-nm CMOS
Tianjun Wu, Chenxi Zhao, Huihua Liu, Yunqiu Wu, Yiming Yu, Kai Kang
Tianjun Wu, UESTC
(10:10 - 10:30)
Abstract
RMo2A-2: Digitally-Assisted 27–33GHz Reflection-Type Phase Shifter with Enhanced Accuracy and Low IL-Variation
Jingjing Xia, Mahitab Farouk, Slim Boumaiza
Jingjing Xia, Univ. of Waterloo
(10:30 - 10:50)
Abstract
RMo2A-3: A 21 to 30-GHz Merged Digital-Controlled High Resolution Phase Shifter-Programmable Gain Amplifier with Orthogonal Phase and Gain Control for 5-G Phase Array Application
Wei Zhu, Wei Lv, Bingbing Liao, Yanping Zhu, Yuefei Dai, Pei Li, Lei Zhang, Yan Wang
Wei Zhu, Tsinghua Univ.
(10:50 - 11:10)
Abstract
RMo2A-4: A 20–43GHz VGA with 21.5dB Gain Tuning Range and Low Phase Variation for 5G Communications in 65-nm CMOS
Tianjun Wu, Chenxi Zhao, Huihua Liu, Yunqiu Wu, Yiming Yu, Kai Kang
Tianjun Wu, UESTC
(11:10 - 11:30)
Abstract
RMo2A-5: A 26-GHz Vector Modulator in 130-nm SiGe BiCMOS Achieving Monotonic 10-b Phase Resolution without Calibration
Ilker Kalyoncu, Abdurrahman Burak, Mehmet Kaynak, Yasar Gurbuz
Ilker Kalyoncu, Sabanci University
(11:30 - 11:50)
Debo Chowdhury
Broadcom
Oren Eliezer
PHAZR
Location
254AB
Abstract
This session presents novel techniques for digitally assisted front-ends for transmitters and receivers operating from sub-1GHz to mmW bands. Both quadrature and polar transmitter architectures of high resolution and efficiency are presented, followed by solutions for full-duplex operation and active interference rejection techniques in receivers.
Technical Papers
Abstract
RMo2B-1: A 20–32GHz Digital Quadrature Transmitter with Notched-Matching and Mode-Switch Topology for 5G Wireless and Backhaul
Huizhen Jenny Qian, Yiyang Shu, Jie Zhou, Xun Luo
Huizhen Jenny Qian, UESTC
(10:10 - 10:30)
Abstract
RMo2B-2: A Wideband Digital Polar Transmitter with Integrated Capacitor-DAC-Based Constant-Envelope Digital-to-Phase Converter
Tong Li, Liang Xiong, Yun Yin, Yangzi Liu, Hao Min, Na Yan, Hongtao Xu
Tong Li, Fudan Univ.
(10:30 - 10:50)
Abstract
RMo2B-3: A 5GHz to 6GHz CMOS Transmitter for Full-Duplex Wireless with Wideband Digital Cancellation
Nimrod Ginzberg, Dror Regev, Genadiy Tsodik, Shimi Shilo, Doron Ezri, Emanuel Cohen
Nimrod Ginzberg, Technion
(10:50 - 11:10)
Abstract
RMo2B-4: A Sub-mW All-Passive RF Front End with Implicit Capacitive Stacking Achieving 13dB Gain, 5dB NF and +25dBm OOB-IIP3
Vijaya Kumar Purushothaman, Eric Klumperink, Berta Trullas Clavera, Bram Nauta
Vijaya Kumar Purushothaman, Univ. of Twente
(11:10 - 11:30)
Abstract
RMo2B-5: A 0.3-to-1.3GHz Multi-Branch Receiver with Modulated Mixer Clocks for Concurrent Dual-Carrier Reception and Rapid Compressive-Sampling Spectrum Scanning
Guoxiang Han, Tanbir Haque, Matthew Bajor, John Wright, Peter R. Kinget
Guoxiang Han, Columbia Univ.
(11:30 - 11:50)
Fabio Sebastiano
Technische Universiteit Delft
Renyuan (Ryan) Wang
BAE Systems
Location
257AB
Abstract
This session presents RF-inspired emerging technologies in the areas of silicon photonics, cryogenic CMOS and heterogeneous integration to enable new photonic systems, quantum computing, and cross-technology optimized circuits. The first two papers exploit the co-design of silicon photonics and CMOS circuits to push the performance of LIDAR and broadband photonic links. The following two papers demonstrate cryogenic operation of CMOS RFICs down to 3 Kelvin to enable future large-scale quantum computers. Finally, the last paper presents the most complex heterogeneously integrated mixed-signal circuit reported to date and demonstrates outstanding performance by choosing the optimal technology for each section of the design.
Technical Papers
Abstract
RMo2C-1: A 0.5–20GHz RF Silicon Photonic Receiver with 120 dB·Hz2/3 SFDR Using Broadband Distributed IM3 Injection Linearization
Navid Hosseinzadeh, Aditya Jain, Kang Ning, Roger Helkey, James F. Buckwalter
Navid Hosseinzadeh, Univ. of California, Santa Barbara
(10:10 - 10:30)
Abstract
RMo2C-2: A 65nm CMOS Continuous-Time Electro-Optic PLL (CT-EOPLL) with Image and Harmonic Spur Suppression for LIDAR
Ali Binaie, Sohail Ahasan, Harish Krishnaswamy
Ali Binaie, Columbia Univ.
(10:30 - 10:50)
Abstract
RMo2C-3: A 6.5-GHz Cryogenic All-Pass Filter Circulator in 40-nm CMOS for Quantum Computing Applications
Andrea Ruffino, Yatao Peng, Fabio Sebastiano, Masoud Babaie, Edoardo Charbon
Andrea Ruffino, EPFL
(10:50 - 11:10)
Abstract
RMo2C-4: Design Considerations for Spin Readout Amplifiers in Monolithically Integrated Semiconductor Quantum Processors
M.J. Gong, U. Alakusu, S. Bonen, M.S. Dadash, Luca Lucci, H. Jia, L.E. Gutierrez, W.T. Chen, D.R. Daughton, G.C. Adam, S. Iordănescu, M. Păşteanu, N. Messaoudi, David L. Harame, A. Müller, R.R. Mansour, S.P. Voinigescu
M.J. Gong, Univ. of Toronto
(11:10 - 11:30)
Abstract
RMo2C-5: Direct Digital Synthesizer with 14GS/s Sampling Rate Heterogeneously Integrated in InP HBT and GaN HEMT on CMOS
Steven Eugene Turner, Mark E. Stuenkel, Gary M. Madison, Justin A. Cartwright, Richard L. Harwood, Joseph D. Cali, Steve A. Chadwick, Michael Oh, John T. Matta, James M. Meredith, Justin M. Byrd, Lawrence J. Kushner
Steven Eugene Turner, BAE Systems
(11:30 - 11:50)

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Pierre Busson
STMicroelectronics
Mona Hella
Rensselaer Polytechnic Institute
Location
252AB
Abstract
This session presents 60GHz and above circuits and systems. Talks will describe 60GHz phased-array transceivers in both CMOS and SiGe technologies. An antenna co-integration approach is described for polarization-duplex TX/RX front end. A 180GHz super regenerative oscillator with 58dB gain for phase recovery and a 22nm FDSOI direct conversion transceiver in the D-band are also presented.
Technical Papers
Abstract
RMo3A-1: A 1V 54–64GHz 4-Channel Phased-Array Receiver in 45nm RFSOI with 3.6/5.1dB NF and -23dBm IP1dB at 28/37mW Per-Channel
Hyunchul Chung, Qian Ma, Gabriel M. Rebeiz
Hyunchul Chung, Univ. of California, San Diego
(13:30 - 13:50)
Abstract
RMo3A-2: A Fully Integrated 60GHz 10Gb/s QPSK Transceiver with Digital Transmitter and T/R Switch in 65nm CMOS
Zheng Song, Jianfu Lin, Yutian Li, Jialiang Ye, Ruichang Ma, Baoyong Chi
Zheng Song, Tsinghua Univ.
(13:50 - 14:10)
Abstract
RMo3A-3: A 60GHz Polarization-Duplex TX/RX Front-End with Dual-Pol Antenna-IC Co-Integration in SiGe BiCMOS
Yao Liu, Arun Natarajan
Yao Liu, Oregon State Univ.
(14:10 - 14:30)
Abstract
RMo3A-4: A 180-GHz Super-Regenerative Oscillator with up to 58dB Gain for Efficient Phase Recovery
Hatem Ghaleb, Christian Carlowitz, David Fritsche, Corrado Carta, Frank Ellinger
Hatem Ghaleb, Technische Universität Dresden
(14:30 - 14:50)
Abstract
RMo3A-5: A Broadband Direct Conversion Transmitter/Receiver at D-Band Using CMOS 22nm FDSOI
Ali A. Farid, Arda Simsek, Ahmed S.H. Ahmed, Mark J.W. Rodwell
Ali A. Farid, Univ. of California, Santa Barbara
(14:50 - 15:10)
Leon van den Oever
Qualcomm
Andre Hanke
Intel
Location
254AB
Abstract
This session presents an overview of the latest developments on blocker tolerance, interference cancellation, and linearity and noise improvement. New techniques are applied in tranceive and receive front-end circuits, in a mixer-first receiver, in a code mixer, in full duplex, and in a wideband receiver.
Technical Papers
Abstract
RMo3B-1: Enhanced Passive Mixer-First Receiver Driving an Impedance with 40dB/Decade Roll-Off, Achieving +12dBm Blocker-P1dB, +33dBm IIP3 and Sub-2dB NF Degradation for a 0dBm Blocker
Sashank Krishnamurthy, Ali M. Niknejad
Sashank Krishnamurthy, Univ. of California, Berkeley
(13:30 - 13:50)
Abstract
RMo3B-2: A Code-Domain RF Signal Processing Front-End for Simultaneous Transmit and Receive with 49.5dB Self-Interference Rejection, 12.1dBm Receive Compression, and 34.3dBm Transmit Compression
Hussam AlShammary, Cameron W. Hill, Ahmed Hamza, James F. Buckwalter
Hussam AlShammary, Univ. of California, Santa Barbara
(13:50 - 14:10)
Abstract
RMo3B-3: A CMOS 0.5–2.5GHz Full-Duplex MIMO Receiver with Self-Adaptive and Power-Scalable RF/Analog Wideband Interference Cancellation
Yuhe Cao, Jin Zhou
Yuhe Cao, Univ. of Illinois at Urbana-Champaign
(14:10 - 14:30)
Abstract
RMo3B-4: A 0.5-to-3.5GHz Self-Interference-Canceling Receiver for In-Band Full-Duplex Wireless
Ali Ershadi, Kamran Entesari
Ali Ershadi, Texas A&M Univ.
(14:30 - 14:50)
Abstract
RMo3B-5: A Baseband-Matching-Resistor Noise-Canceling Receiver Architecture to Increase In-Band Linearity Achieving 175MHz TIA Bandwidth with a 3-Stage Inverter-Only OpAmp
Anoop Narayan Bhat, Ronan van der Zee, Salvatore Finocchiaro, Francesco Dantoni, Bram Nauta
Anoop Narayan Bhat, Univ. of Twente
(14:50 - 15:10)
Wanghua Wu
Samsung
Piero Andreani
Lund Univ.
Location
257AB
Abstract
This session presents two CMOS VCO papers exploiting common-mode resonance to improve the phase-noise-versus-power figure of merit and one low-phase-noise BiCMOS Colpitts oscillator for 5G applications. This session also presents two papers showing millimetre-wave sub-sampling phase-locked loops with new techniques to improve efficiency.
Technical Papers
Abstract
RMo3C-1: A 350mV Complementary 4–5GHz VCO Based on a 4-Port Transformer Resonator with 195.8dBc/Hz Peak FOM in 22nm FDSOI
Omar El-Aassar, Gabriel M. Rebeiz
Omar El-Aassar, Univ. of California, San Diego
(13:30 - 13:50)
Abstract
RMo3C-2: X-Band NMOS and CMOS Cross-Coupled DCO’s with a “Folded” Common-Mode Resonator Exhibiting 188.5dBc/Hz FoM with 29.5% Tuning Range in 16-nm CMOS FinFet
R. Levinger, D. Ben-Haim, I. Gertman, S. Bershansky, R. Levi, J. Kadry, G. Horovitz
R. Levinger, Intel
(13:50 - 14:10)
Abstract
RMo3C-3: A 18.2–29.3GHz Colpitts VCOs Bank with -119.5dBc/Hz Phase Noise at 1MHz Offset for 5G Communications
F. Quadrelli, F. Panazzolo, M. Tiebout, F. Padovan, M. Bassi, A. Bevilacqua
F. Quadrelli, Infineon Technologies
(14:10 - 14:30)
Abstract
RMo3C-4: A 9.6mW Low-Noise Millimeter-Wave Sub-Sampling PLL with a Divider-Less Sub-Sampling Lock Detector in 65nm CMOS
Hao Wang, Omeed Momeni
Hao Wang, Univ. of California, Davis
(14:30 - 14:50)
Abstract
RMo3C-5: A -40-dBc Integrated-Phase-Noise 45-GHz Sub-Sampling PLL with 3.9-dBm Output and 2.1% DC-to-RF Efficiency
Sangyeop Lee, Kyoya Takano, Shinsuke Hara, Ruibing Dong, Shuhei Amakawa, Takeshi Yoshida, Minoru Fujishima
Sangyeop Lee, Hiroshima University
(14:50 - 15:10)

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Patrick Reynaert
Katholieke Univ. Leuven
Margaret Szymanowski
NXP Semiconductors
Location
252AB
Abstract
This session focuses on performance and functionality improvements of millimeter-wave power amplifiers for 5G and phased arrays. Various techniques, such as harmonic traps, negative resistance, integrated couplers, and load modulation are presented to improve efficiency, gain, and linearity. This session encompasses a wide range of semiconductor technologies, including bulk CMOS and SOI.
Technical Papers
Abstract
RMo4A-1: A High Efficiency 39GHz CMOS Cascode Power Amplifier for 5G Applications
Hyun-chul Park, Byungjoon Park, Yunsung Cho, Jaehong Park, Jihoon Kim, Jeong Ho Lee, Juho Son, Kyu Hwan An, Sung-Gi Yang
Hyun-chul Park, Samsung
(15:55 - 16:15)
Abstract
RMo4A-2: A Compact E-Band PA with 22.37% PAE 14.29dBm Output Power and 26dB Power Gain with Efficiency Enhancement at Power Back-Off
Liang Chen, Lei Zhang, Li Zhang, Yan Wang
Liang Chen, Tsinghua Univ.
(16:15 - 16:35)
Abstract
RMo4A-3: An E-Band Compact Power Amplifier for Future Array-Based Backhaul Networks in 22nm FD-SOI
Umut Çelik, Patrick Reynaert
Umut Çelik, Katholieke Univ. Leuven
(16:35 - 16:55)
Abstract
RMo4A-4: An E-Band Fully-Integrated True Power Detector in 28nm CMOS
Valdrin Qunaj, Patrick Reynaert
Valdrin Qunaj, Katholieke Univ. Leuven
(16:55 - 17:15)
Abstract
RMo4A-5: A Coupler-Based Differential Doherty Power Amplifier with Built-In Baluns for High mm-Wave Linear-Yet-Efficient Gbit/s Amplifications
Huy Thong Nguyen, Hua Wang
Huy Thong Nguyen, Georgia Tech
(17:15 - 17:35)
Kamran Entesari
Texas A&M Univ.
Danilo Manstretta
Università di Pavia
Location
254AB
Abstract
Papers in this session deal with RF receiver circuits in SOI CMOS technologies. Highlights of the first two papers are the linearization of a switch and a simplified harmonic rejection technique. Two other papers deal with low-noise amplifiers in FD-SOI, exploiting forward body biasing and a new transformer feedback technique.
Technical Papers
Abstract
RMo4B-1: VSWR Robust Linearizer to Improve Switch IMD by >20dB
Thomas Meier, Atif Mehmood, Jonas Kaps
Thomas Meier, RF Innovation
(15:55 - 16:15)
Abstract
RMo4B-2: A Blocker-Tolerant Two-Stage Harmonic-Rejection RF Front-End
Faizan Ul Haq, Mikko Englund, Yury Antonov, Kari Stadius, Marko Kosunen, Kim B. Östman, Kimmo Koli, Jussi Ryynänen
Faizan Ul Haq, Aalto Univ.
(16:15 - 16:35)
Abstract
RMo4B-3: A Low Noise Figure 28GHz LNA in 22nm FDSOI Technology
Chi Zhang, Frank Zhang, Shafiullah Syed, Michael Otto, Abdellatif Bellaouar
Chi Zhang, GLOBALFOUNDRIES
(16:35 - 16:55)
Abstract
RMo4B-4: A 1.7-dB Minimum NF, 22–32GHz Low-Noise Feedback Amplifier with Multistage Noise Matching in 22-nm SOI-CMOS
Bolun Cui, John R. Long, David L. Harame
Bolun Cui, Univ. of Waterloo
(16:55 - 17:15)
Antoine Frappé
ISEN Lille
Raja Pullela
MaxLinear
Location
257AB
Abstract
This session describes analog and mixed signal building blocks for high speed optical, RF and beam-forming applications. For Optical applications an interleaved ADC front-end for 112 GS/s PAM4 receiver and a digitally assisted PAM4 transceiver for MZM modulators are described. This is followed by a high linearity ADC array used in beam-forming receivers and an RF transmitter with integrated BIST, which addresses fiber applications.
Technical Papers
Abstract
RMo4C-1: A 112-GS/s 1-to-4 ADC Front-End with More than 35-dBc SFDR and 28-dB SNDR up to 43-GHz in 130-nm SiGe BiCMOS
X.-Q. Du, M. Grözing, A. Uhl, S. Park, F. Buchali, K. Schuh, S.T. Le, M. Berroth
X.-Q. Du, Univ. Stuttgart
(15:55 - 16:15)
Abstract
RMo4C-2: A Dual-28Gb/s Digital-Assisted Distributed Driver with CDR for Optical-DAC PAM4 Modulation in 40nm CMOS
Qiwen Liao, Shang Hu, Jian He, Bozhi Yin, Patrick Yin Chiang, Jian Liu, Nan Qi, Nanjian Wu
Qiwen Liao, Chinese Academy of Sciences
(16:15 - 16:35)
Abstract
RMo4C-3: A 77dB-SFDR Multi-Phase-Sampling 16-Element Digital Beamformer with 64 4GS/s 100MHz-BW Continuous-Time Band-Pass ΔΣ ADCs
Rundao Lu, Sunmin Jang, Yun Hao, Michael P. Flynn
Rundao Lu, Univ. of Michigan
(16:35 - 16:55)
Abstract
RMo4C-4: A Wideband Digitally Controllable RFIC with Gain and Wavelength Tunability and Built-In Self Test Functionalities for Optical Transceiver Modules in FTTx Applications
Sreekesh Lakshminarayanan, Harman Malhotra, David Navara, Norbert Reiss, Klaus Hofmann
Sreekesh Lakshminarayanan, Technische Univ. Darmstadt
(16:55 - 17:15)
Abstract
RMo4C-5: A Compact Single-Ended Dual-Band Receiver with Crosstalk and ISI Reductions for High-Density I/O Interfaces
Jieqiong Du, Jia Zhou, X. Shawn Wang, Chien-Heng Wong, Huan-Neng Chen, Chewn-Pu Jou, Mau-Chung Frank Chang
Jieqiong Du, Univ. of California, Los Angeles
(17:15 - 17:35)

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Tim LaRocca
Northrop Grumman
Hongtao Xu
Fudan Univ.
Location
252AB
Abstract
This special session focuses on 5G components and phased array systems for beamforming applications. The papers include a novel high efficiency power amplifier, broadband low noise amplifier, MIMO array with novel single-wire interface, and multi-channel transmit and transceiver phased array SoC.
Technical Papers
Abstract
RTu1E-1: A 26dBm 39GHz Power Amplifier with 26.6% PAE for 5G Applications in 28nm Bulk CMOS
Kaushik Dasgupta, Saeid Daneshgar, Chintan Thakkar, James Jaussi, Bryan Casper
Kaushik Dasgupta, Intel
(08:00 - 08:20)
Abstract
RTu1E-2: A 24–43GHz LNA with 3.1–3.7dB Noise Figure and Embedded 3-Pole Elliptic High-Pass Response for 5G Applications in 22nm FDSOI
Li Gao, Gabriel M. Rebeiz
Li Gao, Univ. of California, San Diego
(08:20 - 08:40)
Abstract
RTu1E-3: A 4-Element 28GHz Millimeter-Wave MIMO Array with Single-Wire Interface Using Code-Domain Multiplexing in 65nm CMOS
Manoj Johnson, Armagan Dascuru, Kai Zhan, Arman Galioglu, Naresh Adepu, Sanket Jain, Harish Krishnaswamy, Arun Natarajan
Manoj Johnson, Oregon State Univ.
(08:40 - 09:00)
Abstract
RTu1E-4: A 16-Element Phased-Array CMOS Transmitter with Variable Gain Controlled Linear Power Amplifier for 5G New Radio
Yunsung Cho, Woojae Lee, Hyun-chul Park, Byungjoon Park, Jeong Ho Lee, Jihoon Kim, Jooseok Lee, Seokhyeon Kim, Jaehong Park, Sangyong Park, Kyu Hwan An, Juho Son, Sung-Gi Yang
Yunsung Cho, Samsung
(09:00 - 09:20)
Abstract
RTu1E-5: A 37–40GHz Phased Array Front-End with Dual Polarization for 5G MIMO Beamforming Applications
Ankur Guha Roy, Ozgur Inac, Amitoj Singh, Tsvika Mukatel, Ohad Brandelstein, Thomas W. Brown, Salah Abughazaleh, Joseph S. Hayden III, Byungho Park, Greg Bachmanek, Te-Yu Jason Kao, Josef Hagn, Sidharth Dalmia, Doron Shoham, Brandon Davis, Iris Fisher, Raanan Sover, Amit Freiman, Bin Xiao, Baljit Singh, Jonathan Jensen
Ankur Guha Roy, Intel
(09:20 - 09:40)
Renaldi Winoto
Mojo Vision
Yuan-Hung Chung
MediaTek
Location
254AB
Abstract
This session showcases two blocker-tolerant wake-up receivers. One is compatible with the IEEE802.11ba standard, and integrates with a legacy WiFi transceiver. Another one uses a continuous-time analog correlator to achieve an optimum power-sensitivity trade-off. The third paper describes a mm-scale transceiver uses a carrier-frequency interlocking IF architecture for sensor-to-sensor communication. Finally, two fully integrated transceivers compliant with NB-IoT and Bluetooth 5/IEEE802.15.4 are demonstrated for next generation IoT applications.
Technical Papers
Abstract
RTu1F-1: An 802.11ba 495µW -92.6dBm-Sensitivity Blocker-Tolerant Wake-Up Radio Receiver Fully Integrated with Wi-Fi Transceiver
Renzhi Liu, Asma Beevi K.T., Richard Dorrance, Deepak Dasalukunte, Mario A. Santana Lopez, Vinod Kristem, Shahrnaz Azizi, Minyoung Park, Brent R. Carlton
Renzhi Liu, Intel
(08:00 - 08:20)
Abstract
RTu1F-2: A -80.9dBm 450MHz Wake-Up Receiver with Code-Domain Matched Filtering Using a Continuous-Time Analog Correlator
Vivek Mangal, Peter R. Kinget
Vivek Mangal, Columbia Univ.
(08:20 - 08:40)
Abstract
RTu1F-3: A 4×4×4-mm³ Fully Integrated Sensor-to-Sensor Radio Using Carrier Frequency Interlocking IF Receiver with -94dBm Sensitivity
Li-Xuan Chuo, Yejoong Kim, Nikolaos Chiotellis, Makoto Yasuda, Satoru Miyoshi, Masaru Kawaminami, Anthony Grbic, David Wentzloff, Hun-Seok Kim, David Blaauw
Li-Xuan Chuo, Univ. of Michigan
(08:40 - 09:00)
Abstract
RTu1F-4: A 55nm SAW-Less NB-IoT CMOS Transceiver in an RF-SoC with Phase Coherent RX and Polar Modulation TX
P.S. Tseng, W. Yang, M.J. Wu, L.M. Jin, D.P. Li, E.C. Low, C.H. Hsiao, H.T. Lin, K.H. Yang, S.C. Shen, C.M. Kuo, C.L. Heng, G.K. Dehng
P.S. Tseng, MediaTek
(09:00 - 09:20)
Abstract
RTu1F-5: A 1.04–4V, Digital-Intensive Dual-Mode BLE 5.0/IEEE 802.15.4 Transceiver SoC with Extended Range in 28nm CMOS
Nam-Seog Kim, Myoung-Gyun Kim, Ashutosh Verma, Gyungseon Seol, Shinwoong Kim, Seokwon Lee, Chilun Lo, Jaeyeol Han, Ikkyun Jo, Chulho Kim, Chih-Wei Yao, Jongwoo Lee
Myoung-Gyun Kim, Samsung
(09:20 - 09:40)

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Bodhisatwa Sadhu
IBM T.J. Watson Research Center
Arun Natarajan
Oregon State Univ.
Location
252AB
Abstract
The special session will describe millimeter-wave 5G beamforming systems operating at both 28 and 39 GHz frequency bands. Talks will describe phased arrays/MIMO transmit and receive systems. Techniques such as built-in testing and multi-band operation will be discussed in the context of large-scale arrays.
Technical Papers
Abstract
RTu2E-1: A 24.5–43.5GHz Compact RX with Calibration-Free 32–56dB Full-Frequency Instantaneously Wideband Image Rejection Supporting Multi-Gb/s 64-QAM/256-QAM for Multi-Band 5G Massive MIMO
Min-Yu Huang, Taiyun Chi, Fei Wang, Sensen Li, Tzu-Yuan Huang, Hua Wang
Min-Yu Huang, Georgia Tech
(10:10 - 10:30)
Abstract
RTu2E-2: A 39GHz 64-Element Phased-Array CMOS Transceiver with Built-In Calibration for Large-Array 5G NR
Yun Wang, Rui Wu, Jian Pang, Dongwon You, Ashbir Aviat Fadila, Rattanan Saengchan, Xi Fu, Daiki Matsumoto, Takeshi Nakamura, Ryo Kubozoe, Masaru Kawabuchi, Bangan Liu, Haosheng Zhang, Junjun Qiu, Hanli Liu, Wei Deng, Naoki Oshima, Keiichi Motoi, Shinichi Hori, Kazuaki Kunihiro, Tomoya Kaneko, Atsushi Shirane, Kenichi Okada
Yun Wang, Tokyo Institute of Technology
(10:30 - 10:50)
Abstract
RTu2E-3: A 24.2–30.5GHz Quad-Channel RFIC for 5G Communications Including Built-In Test Equipment
D. Dal Maistro, C. Rubino, M. Caruso, M. Tiebout, I. Maksymova, M. Ilic, P. Thurner, M. Zaghi, K. Mertens, S. Vehovc, I. Tsvelykh, E. Schatzmayr, M. Druml, R. Druml, M. Mueller, M. Anderwald, J. Wuertele, U. Rueddenklau
D. Dal Maistro, Infineon Technologies
(10:50 - 11:10)
Abstract
RTu2E-4: A Highly Linear 28GHz 16-Element Phased-Array Receiver with Wide Gain Control for 5G NR Application
Youngchang Yoon, Kyu Hwan An, Daehyun Kang, Kihyun Kim, Sangho Lee, Jae Sik Jang, Donggyu Minn, Bohee Suh, Jooseok Lee, Jihoon Kim, Meeran Kim, Jeong Ho Lee, Sung Tae Choi, Juho Son, Sung-Gi Yang
Youngchang Yoon, Samsung
(11:10 - 11:30)
Oleh Krutko
Xilinx
Jeffrey Walling
Tyndall National Institute
Location
254AB
Abstract
In this session, we present four papers focused on enhancing the flexibility in the deployment of RF and millimeter-wave radio systems. These PAs and transmitters use digital techniques, switching, and built-in self-test to enable deployment of a broad range of communication systems.
Technical Papers
Abstract
RTu2F-1: A Quadrature Class-G Complex-Domain Doherty Digital Power Amplifier
Shih-Chang Hung, Si-Wook Yoo, Sang-Min Yoo
Shih-Chang Hung, Michigan State Univ.
(10:10 - 10:30)
Abstract
RTu2F-2: A Frequency Tuneable Switched-Capacitor PA in 65nm CMOS
Zhidong Bai, Jeffrey S. Walling
Ali Azam, Univ. of Utah
(10:30 - 10:50)
Abstract
RTu2F-3: A Broadband High-Efficiency SOI-CMOS PA Module for LTE/LTE-A Handset Applications
A. Serhan, D. Parat, P. Reynier, R. Berro, R. Mourot, C. De Ranter, P. Indirayanti, M. Borremans, E. Mercier, A. Giry
A. Serhan, CEA-LETI
(10:50 - 11:10)
Abstract
RTu2F-4: A 27GHz Adaptive Bias Variable Gain Power Amplifier and T/R Switch in 22nm FD-SOI CMOS for 5G Antenna Arrays
Christian Elgaard, Stefan Andersson, Peter Caputa, Eric Westesson, Henrik Sjöland
Christian Elgaard, Ericsson
(11:10 - 11:30)

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Fred Lee
Verily Life Sciences
Antoine Frappé
ISEN Lille
Location
253ABC
Technical Papers
Abstract
RTUIF1-1: A 9dB Noise Figure Fully Integrated 79GHz Automotive Radar Receiver in 40nm CMOS Technology
Tomotoshi Murakami, Nobumasa Hasegawa, Yoshiyuki Utagawa, Tomoyuki Arai, Shinji Yamaura
Tomotoshi Murakami, DENSO
(13:30 - 13:50)
Abstract
RTUIF1-2: A Compact 76–81GHz 3TX/4RX Transceiver for FMCW Radar Applications in 65-nm CMOS Technology
Liang Chen, Lei Zhang, Weiping Wu, Li Zhang, Yan Wang
Liang Chen, Tsinghua Univ.
(13:50 - 14:10)
Abstract
RTUIF1-3: A Full-Band Multi-Standard Global Analog & Digital Car Radio SoC with a Single Fixed-Frequency PLL
Lucien J. Breems, Jan van Sinderen, Tom Fric, Hans Stoffels, Franco Fritschij, Hans Brekelmans, Hendrik van der Ploeg, Ulrich Moehlmann, Robert Rutten, Muhammed Bolatkale, Shagun Bajoria, Jan Niehof, Bert Oude-Essink, Gerard Lassche
Lucien J. Breems, NXP Semiconductors
(14:10 - 14:30)
Abstract
RTUIF1-4: Laser Spectral Linewidth Reduction Using an Integrated Pound-Drever-Hall Stabilization System in 180nm CMOS SOI
Mohamad Hossein Idjadi, Firooz Aflatouni
Mohamad Hossein Idjadi, Univ. of Pennsylvania
(14:30 - 14:50)
Abstract
RTUIF1-5: 22nm FD-SOI Technology with Back-Biasing Capability Offers Excellent Performance for Enabling Efficient, Ultra-Low Power Analog and RF/Millimeter-Wave Designs
S.N. Ong, L.H.K. Chan, K.W.J. Chew, C.K. Lim, W.L. Oo, Abdellatif Bellaouar, Chi Zhang, W.H. Chow, T. Chen, R. Rassel, J.S. Wong, C.W.F. Wan, J. Kim, W.H. Seet, David L. Harame
S.N. Ong, GLOBALFOUNDRIES
(14:50 - 15:10)
Abstract
RTUIF1-6: A Low Power Fully-Integrated 76–81GHz ADPLL for Automotive Radar Applications with 150MHz/µs FMCW Chirp Rate and -95dBc/Hz Phase Noise at 1MHz Offset in FDSOI
Ahmed R. Fridi, Chi Zhang, Abdellatif Bellaouar, Man Tran
Ahmed R. Fridi, GLOBALFOUNDRIES
(15:10 - 15:30)
Abstract
RTUIF1-7: An 82.2-to-89.3GHz CMOS VCO with DC-to-RF Efficiency of 14.8%
A. Tarkeshdouz, M. Haghi Kashani, E. Hadizadeh Hafshejani, S. Mirabbasi, E. Afshari
A. Tarkeshdouz, Univ. of British Columbia
(15:30 - 15:50)
Abstract
RTUIF1-8: A 62GHz Tx/Rx 2×128-Element Dual-Polarized Dual-Beam Wafer-Scale Phased-Array Transceiver with Minimal Reticle-to-Reticle Stitching
Umut Kodak, Bhaskara Rupakula, Samet Zihir, Gabriel M. Rebeiz
Umut Kodak, Univ. of California, San Diego
(15:50 - 16:10)
Abstract
RTUIF1-9: A 1–4GHz 4×4 MIMO Receiver with 4 Reconfigurable Orthogonal Beams for Analog Interference Rejection
Sajad Golabighezelahmad, Eric Klumperink, Bram Nauta
Sajad Golabighezelahmad, Univ. of Twente
(16:10 - 16:30)