Technical Sessions

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23ABC
Abstract
This session presents the latest advances in state-of-the-art optical receivers, dielectric waveguide links, and high-speed converters.
Technical Papers
Abstract
RMo1A-1: A 112-Gbps, 0.73-pJ/bit Fully-Integrated O-band I-Q Optical Receiver in a 45-nm CMOS SOI-Photonic Process
Ghazal Movaghar, Viviana Arrunategui, Junqian Liu, Aaron Maharry, Clint Schow, James Buckwalter
Ghazal Movaghar, Univ. of California, Santa Barbara
Univ. of California, Santa Barbara, Univ. of California, Santa Barbara, Univ. of California, Santa Barbara, Univ. of California, Santa Barbara, Univ. of California, Santa Barbara, Univ. of California, Santa Barbara
(08:00 - 08:20)
Abstract
RMo1A-2: A 42.7Gb/s Optical Receiver with Digital CDR in 28nm CMOS
Hyungryul Kang, Inhyun Kim, Ruida Liu, Ankur Kumar, Ilmin Yi, Yuan Yuan, Zhihong Huang, Samuel Palermo
Hyungryul Kang, Texas A&M Univ.
Texas A&M Univ., Texas A&M Univ., Texas A&M Univ., Texas A&M Univ., Texas A&M Univ., Hewlett-Packard Enterprise, Hewlett-Packard Enterprise, Texas A&M Univ.
(08:20 - 08:40)
Abstract
RMo1A-3: 100-Gb/s 3-m Dual-Band PAM-4 Dielectric Waveguide Link with 1.9 pJ/bit/m Efficiency in 28-nm CMOS
Kristof Dens, Joren Vaes, Christian Bluemm, Gabriel Guimaraes, Berke Gungor, Changsong Xie, Alexander Dyck, Patrick Reynaert
Kristof Dens, KU Leuven
KU Leuven, KU Leuven, Huawei Technologies Duesseldorf GmbH, KU Leuven, KU Leuven, Huawei Technologies Dusseldorf GmbH, Huawei Technologies Dusseldorf GmbH, KU Leuven
(08:40 - 09:00)
Abstract
RMo1A-4: A 12-bit 1.1GS/s Single-Channel Pipelined-SAR ADC with Adaptive Inter-stage Redundancy
Xianshan Wen, Tao Fu, Ping Gui
Xianshan Wen, Southern Methodist Univ.
Southern Methodist Univ., Southern Methodist Univ., Southern Methodist Univ.
(09:00 - 09:20)
Bahar Jalali Farahani
Cisco Systems, Inc.
Antoine Frappé
Univ. of Lille
24ABC
Abstract
This session discusses state-of-the-art silicon-based front-ends and building blocks from sub-6 GHz to sub-mmWave frequency range.
Technical Papers
Abstract
RMo1B-1: A 65 nm CMOS Current-Mode Receiver Frontend with Frequency Translational Noise Cancelation and 425 MHz IF Bandwidth
benqing guo, haishi wang, lei li, wanting zhou
benqing guo, chengdu university of information technology
chengdu university of information technology, cuit, uestc, uestc
(08:00 - 08:20)
Abstract
RMo1B-2: IIP2-Enhanced Receiver Front-End with Notch-Filtered Low-Noise Transconductance Amplifier for 5G New Radio Cellular Applications
Donggu Lee, Sukju Yun, Kuduck Kwon
Donggu Lee, Kangwon national university
Kangwon national university, Kangwon national university, Kangwon national university
(08:20 - 08:40)
Abstract
RMo1B-3: A Band-Shifting Millimeter-Wave T/R Front-End with Enhanced Imaging and Interference Rejection Covering 5G NR FR2 n257/n258/n259/n260/n261 Bands
Fuyuan Zhao, Wei Deng, Haikun Jia, Wenjing Ye, Ruichen Wan, Baoyong Chi
Fuyuan Zhao, Tsinghua University, Beijing, China
Tsinghua University, Beijing, China, Tsinghua Univ., Tsinghua Univ., Tsinghua Univ., Tsinghua University, Beijing, China, Tsinghua University, Beijing, China
(08:40 - 09:00)
Abstract
RMo1B-4: A 6-22 GHz CMOS Phase Shifter with Integrated mm-Wave LO
Natan Ershengoren, Eran Socher
Natan Ershengoren, Tel-Aviv Univ.
Tel-Aviv Univ., Tel-Aviv Univ.
(09:00 - 09:20)
Abstract
RMo1B-5: A 300-320 GHz Sliding-IF I/Q Receiver Front-End in 130 nm SiGe Technology
Sumit Singh, Mostafa Nokandi, Mohammad Montaseri, Timo Rahkonen, Marko Leinonen, Aarno Parssinen
Sumit Singh, Univ. of Oulu
Univ. of Oulu, Univ. of Oulu, Univ. of Oulu, Univ. of Oulu, Univ. of Oulu, Univ. of Oulu
(09:20 - 09:40)
Hao Gao
Technische Univ. Eindhoven
Ramesh Harjani
Univ. of Minnesota
25ABC
Abstract
This session presents four transceivers and beamforming RFICs for 5G & mm-Wave applications. The first paper is a V-Band 4-channel transmitter beamformer in 28nm CMOS with an OP1dB of 10.8dBm. The second paper is a dual-band 28/37GHz reconfigurable beamforming RFIC in 28nm FDSOI. The third paper is a 4x2 2D Butler matrix switched-beam chipset for 5G application in 28-nm CMOS and the final paper is a phased-array receiver front-end in 28-nm FDSOI with a NF of
Technical Papers
Abstract
RMo1C-1: A V-band Four-Channel Phased Array Transmitter Beamforming IC With 0.7 degree Phase Step in 20 dB Dynamic Range
Cheol So, Eun-Taek Sung, Songcheol Hong
Cheol So, Korea Advanced Institute of Science and Technology
Korea Advanced Institute of Science and Technology, Samsung Electronics Co., Ltd., Korea Advanced Institute of Science and Technology
(08:00 - 08:20)
Abstract
RMo1C-2: A 28/37 GHz Frequency Reconfigurable Dual-Band Beamforming Front-End IC for 5G NR
Jaehun Lee, Hyoungkyu Jin, Gyuha Lee, Eun-Taek Sung, Songcheol Hong
Jaehun Lee, Korea Advanced Institute of Science and Technology
Korea Advanced Institute of Science and Technology, Korea Advanced Institute of Science and Technology, Korea Advanced Institute of Science and Technology, Samsung Electronics Co., Ltd., Korea Advanced Institute of Science and Technology
(08:20 - 08:40)
Abstract
RMo1C-3: A 26.5-GHz 4×2 Array Switched Beam-Former based on 2-D Butler Matrix for 5G Mobile Applications in 28-nm CMOS
Youngjoo Lee, Juwon Kim, Sungwon Kwon, Bosung Suh, Jun Hwang, Kyutae Park, Dohoon Chun, Kyu-Jong Choi, Hongseok Choi, Dongho Yoo, Byung-Wook Min
Youngjoo Lee, Yonsei Univ.
Yonsei Univ., Yonsei Univ., Yonsei Univ., Yonsei Univ., Yonsei Univ., Yonsei Univ., Yonsei Univ., Yonsei Univ., Yonsei Univ., Yonsei Univ., Yonsei Univ.
(08:40 - 09:00)
Abstract
RMo1C-4: A Phased-Array Receiver Front-End Using a Compact High Off-Impedance T/R Switch for n257/n258/n261 5G FR2 Cellular
Ying Chen, Xiaohua Yu, Samrat Dey, Venumadhav Bhagavatula, Chechun Kuo, Tienyu Chang, Ivan Lu, Sangwon Son
Ying Chen, Samsung Semiconductor, Inc.
Samsung Semiconductor, Inc., Samsung Semiconductor, Inc., Samsung Semiconductor, Inc., Samsung Semiconductor, Inc., Samsung Electronics Co., Ltd., Samsung Semiconductor, Inc., Samsung Semiconductor, Inc., Samsung Semiconductor, Inc.
(09:00 - 09:20)
Hongtao Xu
Fudan Univ.
Gernot Hueber
Silicon Austria Labs

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23ABC
Abstract
In this session, GaN FET modeling using artificial neural network as well a paper comparing various industry GaN models will be covered. A new T-gate RFSOI device method is explored for improved LNA device. A 22FDX based EDMOS PA will is presented next. Finally, layout tradeoffs using ALIGN software tool will be presented.
Technical Papers
Abstract
RMo2A-1: Exploration of Design / Layout Tradeoffs for RF Circuits using ALIGN
Jitesh Poojary, Ramprasath S, Sachin Sapatnekar, Ramesh Harjani
Jitesh Poojary, Univ. of Minnesota, Twin Cities
Univ. of Minnesota, Twin Cities, Univ. of Minnesota, Twin Cities, Univ. of Minnesota, Twin Cities, Univ. of Minnesota
(10:10 - 10:30)
Abstract
RMo2A-2: Optimizing RFSOI Performance through a T-shaped Gate and Nano-Second Laser Annealing Techniques
Luca Lucci, sebastian Cremer, Thibaud Fache, Blandine Duriez, Fred Gaillard
Luca Lucci, CEA-LETI
CEA-LETI, ST microelectrioncs, CEA-LETI, CEA-LETI, CEA-LETI
(10:30 - 10:50)
Abstract
RMo2A-3: 22FDX® EDMOS for 5G mmW Power Amplifier Applications
Ming-Cheng Chang, Zaid Al-Husseini, Shafi Syed, Shih Ni Ong, Lye Hock Kelvin Chan, Wafa Arfaoui, Dieter Lipp, Elan Veeramani, Jerome Mazurier, Andreas Knorr, Nick Comfoltey, Tianbing Chen
Ming-Cheng Chang, GLOBALFOUNDRIES
GLOBALFOUNDRIES, GLOBALFOUNDRIES, GLOBALFOUNDRIES, GLOBALFOUNDRIES, GLOBALFOUNDRIES, GLOBALFOUNDRIES, GLOBALFOUNDRIES, GLOBALFOUNDRIES, GLOBALFOUNDRIES, GLOBALFOUNDRIES, GLOBALFOUNDRIES, GLOBALFOUNDRIES
(10:50 - 11:10)
Abstract
RMo2A-4: Artificial Neural Networks for GaN HEMT Model Extraction in D-bandUsing Sparse Data
Andrea Arias-Purdue, Eythan Lam, Jonathan Tao, Everett O'Malley, James Buckwalter
Andrea Arias-Purdue, Univ. of California, Santa Barbara
Univ. of California, Santa Barbara, Univ. of California, Santa Barbara, Univ. of California, Santa Barbara, Univ. of California, Santa Barbara, UCSB
(11:10 - 11:30)
Abstract
RMo2A-5: Benchmarking Measurement-Based Large-Signal FET Models for GaN HEMT Devices
Rafael Perez Martinez, Masaya Iwamoto, Jianjun Xu, Philipp Pahl, Srabanti Chowdhury
Rafael Perez Martinez, Stanford Univ.
Stanford Univ., Keysight Technologies, Keysight Technologies, Keysight Technologies, Stanford Univ.
(11:30 - 11:50)
Alvin Joseph
GLOBALFOUNDRIES
Renyuan Wang
BAE Systems
24ABC
Abstract
This session discusses state-of-the art III-V front ends and building including GaN wideband switches and front-end modules along with a InP sub-mmWave receiver.
Technical Papers
Abstract
RMo2B-1: A DC-to-12 GHz 1.4–2.5 dB IL 4×8 Switch Matrix with Three-Port Reconfigurable Inter-Stage Matching Network
Zhenyu Wang, Zhaowu Wang, Yicheng Wang, Xiaochen Tang, Yong Wang
Zhenyu Wang, Univ. of Electronic Science and Technology of China
Univ. of Electronic Science and Technology of China, Univ. of Electronic Science and Technology of China, Univ. of Electronic Science and Technology of China, New Mexico State Univ., University of Electronic Science and Technology of
(10:10 - 10:30)
Abstract
RMo2B-2: A DC-to-18 GHz High Power and Low Loss Band-Divided SP3T Switch with Reconfigurable Pole-to-Throw Network in 0.25-μm GaN
Zhaowu Wang, Yicheng Wang, Zhenyu Wang, Yong Wang
Zhaowu Wang, Univ. of Electronic Science and Technology of China
Univ. of Electronic Science and Technology of China, Univ. of Electronic Science and Technology of China, Univ. of Electronic Science and Technology of China, University of Electronic Science and Technology of
(10:30 - 10:50)
Abstract
RMo2B-3: A 4.8-6.4-GHz GaN MMIC Front-End Module with Enhanced Back-off Efficiency and Compact Size
Guansheng Lv, Wenhua Chen, Xiaofan Chen, Long Chen, Zhenghe Feng
Guansheng Lv, Tsinghua Univ.
Tsinghua Univ., Tsinghua Univ., Tsinghua Univ., Tsinghua Univ., Tsinghua Univ.
(10:50 - 11:10)
Abstract
RMo2B-4: A 280 GHz InP HBT Direct-Conversion Receiver with 10.8 dB NF
Utku Soylu, Amirreza Alizadeh, Munkyo Seo, Mark Rodwell
Utku Soylu, Univ. of California, Santa Barbara
Univ. of California, Santa Barbara, Univ. of California, Santa Barbara, Sungkyunkwan Univ., Univ. of California, Santa Barbara
(11:10 - 11:30)
Marcus Granger-Jones
QORVO, Inc.
Emanuel Cohen
Technion - Israel Institute of Technology
25ABC
Abstract
This session covers RF and mmWave systems that span applications in space technology, D-band communications, all the way to biomedical implants. The session starts with an invited paper from NASA Jet Propulsion laboratory on CMOS-based mmWave spectrometer for performing scientific studies in space. The second paper covers scalable wafer-scale TX/RX phased array at 140GHz, while the third paper presents a baseband to D-band transmit module. The session wraps with an innovative millimeter-sized implantable glucose sensor using a fluorescent hydrogel.
Technical Papers
Abstract
RMo2C-1: A CMOS 183 GHz Millimeter-Wave Spectrometer for Exploring the Origins of Water and Evolution of the Solar System
Adrian Tang, Mau-Chung Chang, Yanghyo Kim, Goutam Chattopadhyay
Adrian Tang, UCLA/JPL
UCLA/JPL, Univ. of California, Los Angeles, Stevens Institute of Technology, NASA’s Jet Propulsion Lab
(10:10 - 10:30)
Abstract
RMo2C-2: A 140 GHz Scalable On-Grid 8x8-Element Transmit-Receive Phased-Array with Up/Down Converters and 64QAM/24 Gbps Data Rates
Amr Ahmed, Linjie Li, Minjae Jung, Gabriel Rebeiz
Amr Ahmed, Univ. of California, San Diego
Univ. of California, San Diego, Univ. of California, San Diego, Univ. of California, San Diego, Univ. of California, San Diego
(10:30 - 10:50)
Abstract
RMo2C-3: A 57.6 Gb/s Wireless Link based on 26.4 dBm EIRP D-band Transmitter Module and a Channel Bonding Chipset on CMOS 45nm
Jose Luis Gonzalez-Jimenez, Alexandre Siligaris, Abdelaziz Hamani, Francesco Foglia Manzillo, Pierre Courouve, Nicolas Cassiau, Cedric Dehos, Antonio Clemente
Jose Luis Gonzalez-Jimenez, Univ. Grenoble Alpes - CEA, LETI
Univ. Grenoble Alpes - CEA, LETI, Univ of Grenoble-Alpes France, Univ of Grenoble-Alpes France, CEA, Univ. Grenoble Alpes - CEA, LETI, Univ. Grenoble Alpes - CEA, LETI, Univ. Grenoble Alpes - CEA, LETI, Univ. Grenoble Alpes - CEA, LETI
(10:50 - 11:10)
Abstract
RMo2C-4: A mm-sized implantable glucose sensor using a fluorescent hydrogel
Hyeonkeon Lee, Honghyeon Park, Taein Kim, Mi Song Nam, Yun Jung Heo, Sanghoek Kim
Hyeonkeon Lee, LIG Nex1 Co., Ltd
LIG Nex1 Co., Ltd, Siliconmitus, Kyung Hee Univ., Kyung Hee Univ., Kyung Hee Univ., Kyung Hee Univ.
(11:10 - 11:30)
Mona Mostafa Hella
Rensselaer Polytechnic Institute
Rocco Tam
NXP Semiconductors

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23ABC
Abstract
The session focus is on Reference Clock and Phase-Locked Loop design techniques for RF and mm-wave applications, starting with the introduction of a novel current-reuse coupled mixer phase detector, followed by design techniques for radiation hardened PLLs, then a fast startup reference oscillator based on phase-aligned clock is introduced, and to conclude, a transformer-coupled BAW oscillator with very low jitter is presented.
Technical Papers
Abstract
RMo3A-1: A 14.2 mW 29–39.3-GHz Two-Stage PLL with a Current-Reuse Coupled Mixer Phase Detector
Yuan Liang, Chirn Chye Boon
Yuan Liang, Nanyang Technological Univ.
Nanyang Technological Univ., Nanyang Technological Univ.
(13:30 - 13:50)
Abstract
RMo3A-2: A Radiation-Hardened by Design 15-22GHz LC-VCO Charge-Pump PLL Achieving -240dB FoM in 22nm FinFET
David Dolt, Samuel Palermo
David Dolt, Texas A&M Univ.
Texas A&M Univ., Texas A&M Univ.
(13:50 - 14:10)
Abstract
RMo3A-3: A Fast-Startup 80MHz Crystal Oscillator with 96x/368x Startup-Time Reductions for 3.0V/1.2V Swings Based on Un-interrupted Phase-Aligned Injection
Chien-Wei Chen, Hung Chao-Ching, Yu-Li Hsueh
Chien-Wei Chen, MediaTek, Inc.
MediaTek, Inc., MediaTek, Inc., MediaTek, Inc.
(14:10 - 14:30)
Abstract
RMo3A-4: Transformer-Coupled 2.5GHz BAW oscillator with 12.5fs RMS-Jitter and 1kHz Figure-of-Merit (FOM) of 210dB
Bichoy Bahr, Sachin Kalia, Baher Haroun, Swaminathan Sankaran
Bichoy Bahr, Texas Instruments
Texas Instruments, Texas Instruments, Texas Instruments, Inc., Texas Instruments, Inc.
(14:30 - 14:50)
Salvatore Finocchiaro
QORVO, Inc.
Teerachot Siriburanon
Univ. College Dublin
24ABC
Abstract
This session discuses state-of-the art silicon based mmWave reconfigurable/wideband and sub-mmWave gain-boosted/wideband low noise amplifiers (LNAs).
Technical Papers
Abstract
RMo3B-1: A mm-Wave Wideband/Reconfigurable LNA Using a 3-Winding Transformer Load in 22-nm CMOS FDSOI
Mohammad Ghaedi Bardeh, Jierui Fu, Navid Naseh, Jeyanandh Paramesh, Kamran Entesari
Mohammad Ghaedi Bardeh, Texas A&M Univ.
Texas A&M Univ., Texas A&M Univ., Texas A&M Univ., Texas A&M Univ., Texas A&M Univ.
(13:30 - 13:50)
Abstract
RMo3B-2: High-Performance Broadband CMOS Low-Noise Amplifier with a Three-Winding Transformer for Broadband Matching
Joon-Hyung Kim, Jeong-Taek Son, Jung-Taek Lim, Jae-Eun Lee, Jae-Hyeok Song, Min-Seok Baek, Han-Woong Choi, Eun-Gyu Lee, Sun-Kyu Choi, Chong-Min Lee, Sung-Ku Yeo, Choul-Young Kim
Joon-Hyung Kim, Chungnam National Univ.
Chungnam National Univ., Chungnam National Univ., Chungnam National Univ., Chungnam National Univ., Chungnam National Univ., Chungnam National Univ., Chungnam National Univ., Chungnam National Univ., Chungnam National Univ., Samsung Research in Samsung Electronics, Chungnam National Univ., Chungnam National Univ.
(13:50 - 14:10)
Abstract
RMo3B-3: A 28-GHz 12-dBm IIP3 Low-Noise Amplifier Using Source-Sensed Derivative Superposition of Cascode for Full-Duplex Receivers
Jonghoon Myeong, Byung-Wook Min
Jonghoon Myeong, Yonsei Univ.
Yonsei Univ., Yonsei Univ.
(14:10 - 14:30)
Abstract
RMo3B-4: A SiGe BiCMOS D-Band LNA with Gain Boosted by Local Feedback in Common-Emitter Transistors
Guglielmo Maria De Filippi Tedeschi, Lorenzo Piotto, Andrea Bilato, Andrea Mazzanti
Guglielmo Maria De Filippi Tedeschi, Univ. of Pavia
Univ. of Pavia, Univ. of Pavia, Univ. of Pavia, Univ. of Pavia
(14:30 - 14:50)
Abstract
RMo3B-5: A D-Band to J-Band Low-Noise Amplifier with High Gain-Bandwidth Product in an Advanced 130 nm SiGe BiCMOS Technology
Marcel Andree, Janusz Grzyb, Bernd Heinemann, Ullrich Pfeiffer
Marcel Andree, University of Wuppertal
University of Wuppertal, Bergische Universität Wuppertal, IHP, University of Wuppertal
(14:50 - 15:10)
Vadim Issakov
Technische Univ. Braunschweig
Andrea Bevilacqua
Univ. of Padova
25ABC
Abstract
The session presents high performance systems and circuits operating above 140 GHz. A 140 GHz OOK transceiver shows 26 Gb/s data rate in 28nm CMOS and a 400 GHz system presents a multi Gb/s link using PIN diodes in 90nm SiGe. A gain-boosted amplifier achieves high gain per stage at 190 GHz in 65nm CMOS and a multiplier/amplifier chain transmitter demonstrates high output power and efficiency at 320 GHz in 130nm SiGe.
Technical Papers
Abstract
RMo3C-1: A 0.32-THz 6.6-dBm Single-Chain CW Transmitter Using On-Chip Antenna With 2.65% DC-to-THz Efficiency
Georg Zachl, Christoph Mangiavillano, Rohish Kumar Mitta, Tim Schumacher, Harald Pretl, Andreas Stelzer
Georg Zachl, Johannes Kepler Univ. Linz
Johannes Kepler Univ. Linz, Johannes Kepler Univ. Linz, Johannes Kepler Univ. Linz, Johannes Kepler Univ. Linz, Johannes Kepler Univ. Linz, Johannes Kepler Univ. Linz
(13:30 - 13:50)
Abstract
RMo3C-2: A 26-Gb/s 140-GHz OOK CMOS Transmitter and Receiver Chipset for High-Speed Proximity Wireless Communication
Qiuyu Peng, Haikun Jia, Ran Fang, Pingda Guan, Mingxing Deng, Jiamin Xue, Wei Deng, Xin Liang, Baoyong Chi
Qiuyu Peng, Tsinghua Univ.
Tsinghua Univ., Tsinghua Univ., BriRadio Technology Inc, Tsinghua Univ., Tsinghua Univ., Tsinghua Univ., Tsinghua Univ., BriRadio Technology Inc, Tsinghua Univ.
(13:50 - 14:10)
Abstract
RMo3C-3: A 189GHz three-stage super-gain-boosted amplifier with power gain of 10.7 dB/stage at near-fmax frequencies in 65nm CMOS
Fei He, Menghu Ni, Qian Xie, Zheng Wang
Fei He, Univ. of Electronic Science and Technology of China
Univ. of Electronic Science and Technology of China, Univ. of Electronic Science and Technology of China, Univ. of Electronic Science and Technology of China, University of Electronic Science and Technology of
(14:10 - 14:30)
Abstract
RMo3C-4: A Fully Integrated 400 GHz OOK Transceiver with On-Chip Antenna in 90 nm SiGe BiCMOS for Multi Gbps Wireless Communication
Sidharth Thomas, Sam Razavian, Aydin Babakhani
Sidharth Thomas, Univ. of California, Los Angeles
Univ. of California, Los Angeles, Univ. of California, Los Angeles, Univ. of California, Los Angeles
(14:30 - 14:50)
Omeed Momeni
Univ. of California, Davis
Hossein Hashemi
Univ. of Southern California

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23ABC
Abstract
This session presents recent advancements in CMOS frequency multiplication technique for mm-Wave applications. The first two papers discuss circuit solutions to improve the power efficiency of mm-Wave frequency doublers. The last two papers present techniques for harmonics rejection applied to a tripler and a quadrupler for E- and W-band applications.
Technical Papers
Abstract
RMo4A-1: A Double Balanced Frequency Doubler Achieving 70% Drain Efficiency and 25% Total Efficiency.
Jesse Moody
Jesse Moody, Sandia National Laboratories
Sandia National Laboratories
(15:40 - 16:00)
Abstract
RMo4A-2: A 47 GHz to 70 GHz Frequency Doubler Exploiting 2nd-Harmonic Feedback with 10.1 dBm Psat and PAEPeak of 22% in 65 nm CMOS
Amin Aghighi, Mostafa Essawy, Arun Natarajan
Amin Aghighi, Oregon State Univ.
Oregon State Univ., Oregon State Univ., Oregon State Univ.
(16:00 - 16:20)
Abstract
RMo4A-3: A 91.9-113.2 GHz Compact Frequency Tripler with 44.6 dBc Peak Fundamental Harmonic-Rejection-Ratio Using Embedded Notch-filters and Area-Efficient Matching Network in 65 nm CMOS
Xiangrong Huang, Haikun Jia, Wei Deng, Zhihua Wang, Baoyong Chi
Xiangrong Huang, Tsinghua Univ.
Tsinghua Univ., Tsinghua Univ., Tsinghua Univ., Tsinghua Univ., Tsinghua Univ.
(16:20 - 16:40)
Abstract
RMo4A-4: A Compact 70-86 GHz Bandwidth Frequency Quadrupler with Transformer-Based Harmonic Reflectors in 28nm CMOS
Paolo Ricco, Gianfranco Avitabile, Danilo Manstretta
Paolo Ricco, Univ. of Pavia
Univ. of Pavia, Polytechnic of Bari, Univ. of Pavia
(16:40 - 17:00)
Andrea Mazzanti
Univ. of Pavia
Foster Dai
Auburn Univ.
24ABC
Abstract
Techniques in this session represent advances in wireless connectivity for NB-IoT and WiFi radios. For NB-IoT radios, advances in the state of the art are presented with a sub-mW receiver. For WiFi radios, this session presents a multi-beam phased array receiver in C-Band, a tri-band transceiver supporting 4096-QAM modulation, and a transmitter utilizing a 2-duty cycle harmonic rejection mixer for C-IMD3 linearization while consuming only 20mW of power.
Technical Papers
Abstract
RMo4B-1: A 0.75 mW Receiver Front-end For NB-IoT
Hossein Rahmanian Kooshkaki, Patrick Mercier
Hossein Rahmanian Kooshkaki, Univ. of California, San Diego
Univ. of California, San Diego, Univ. of California, San Diego
(15:40 - 16:00)
Abstract
RMo4B-2: A C-Band Compact High-Linearity Multibeam Phased-Array Receiver With Merged Gain-Programmable Phase Shifter Technique
Nayu Li, Jingying Zhou, Yuexiaozhou Yuan, Huiyan Gao, Shaogang Wang, Hang Lu, Chunyi Song, Yen-Cheng Kuan, Qun Jane Gu, Zhiwei Xu
Nayu Li, Zhejiang Univ.
Zhejiang Univ., Zhejiang Univ., Zhejiang Univ., Zhejiang Univ., Zhejiang Univ., Zhejiang Univ., Zhejiang Univ., National Yang Ming Chiao Tung Univ., Univ. of California, Davis, Zhejiang Univ.
(16:00 - 16:20)
Abstract
RMo4B-3: A Wi-Fi Tri-band switchable Transceiver with 57.9fs-RMS-jitter Frequency Synthesizer, Achieving -42.6dB EVM floor for EHT320 4096-QAM MCS13 signal
Tsung Ming Chen, Ming-Chung Liu, Pi-An Wu, Wei-Kai Hong, Ting-Wei Liang, Wei-Pang Chao, Po-Yu Chang, Yu-Ting Chou, Chien-Wei Chen, Sen-You Liu, Chang-Cheng Huang, Hsiu-Hsien Ting, Min-Shun Hsu, Yao-Chi Wang, Hung Chao-Ching, Yu-Li Hsueh, Eric Lu, Yuan-Hung Chung, Jing-Hong Conan Zhan
Tsung Ming Chen, MediaTek, Inc.
MediaTek, Inc., MediaTek, Inc., MediaTek, Inc., MediaTek, Inc., MediaTek, Inc., MediaTek, Inc., MediaTek, Inc., MediaTek, Inc., MediaTek, Inc., MediaTek, Inc., MediaTek, Inc., MediaTek, Inc., MediaTek, Inc., MediaTek, Inc., MediaTek, Inc., MediaTek, Inc., MediaTek, Inc., MediaTek, Inc., MediaTek, Inc.
(16:20 - 16:40)
Abstract
RMo4B-4: Low Power 802.11ah Transmitter with 2-Duty Cycle Harmonic Rejection Mixer and RF/BB Digital Predistorter for C-IMD3 Linearization
Seong-Sik Myoung, Jonghoon Park, Chang Hun Song, Ryun Woo Kim, Jaeyoung Ryu, Jeongki Choi, Hoai-Nam Nguyen, Seungyun Lee, Ilyong Jung, Jong-Han Lim, Sok Kyu Lee
Seong-Sik Myoung, Newracom
Newracom, Newracom, Newracom, Newracom, Newracom, Newracom, Newracom, Newracom, Newracom, Newracom, Newracom
(16:40 - 17:00)
Arun Paidimarri
IBM T.J. Watson Research Center
Roxann Broughton-Blanchard
Analog Devices, Inc.
25ABC
Abstract
This session will present four power amplifiers for the 5G mm-Wave frequency range. The first two papers improve the bandwidth of the Doherty operation by using novel power combining techniques. The first paper, implemented in 45nm SOI, implements a role-exchange of different main and auxiliary PAs over frequency. The second paper, implemented in 40nm CMOS, synthesizes a broadband Doherty combining network. The third paper in the session highlights the layout challenges for output combiners and presents 256 QAM measurements in 65nm SOI. The last paper achieves very low AM-PM by utilizing varactors and second harmonic traps in 40nm CMOS
Technical Papers
Abstract
RMo4C-1: A 26-40 GHz 4-Way Hybrid Parallel-Series Role-Exchange Doherty PA with Broadband Deep Power Back-Off Efficiency Enhancement
Edward Liu, Hua Wang
Edward Liu, Swiss Federal Institute of Technology
Swiss Federal Institute of Technology, ETH Zurich
(15:40 - 16:00)
Abstract
RMo4C-2: A 26GHz Balun-First Three-Way Doherty PA in 40nm CMOS with 20.7dBm Psat and 20dB Power Gain
Anil Kumar Kumaran, Masoud Pashaeifar, Hossein Mashad Nemati, Leo C.N. de Vreede, Morteza S. Alavi
Anil Kumar Kumaran, Delft Univ. of Technology
Delft Univ. of Technology, Delft Univ. of Technology, Huawei Technologies Co., Ltd., Delft Univ. of Technology, Delft Univ. of Technology
(16:00 - 16:20)
Abstract
RMo4C-3: A 26-GHz Linear Power Amplifier with 20.8-dBm OP1dB Supporting 256-QAM Wideband 5G NR OFDM for 5G Base Station Equipment
Zhilin Chen, Xiyu Wang, Xiaoxiao Ma, Min Lu, Jie Hu, Keqing Ouyang, Zhijun Long
Zhilin Chen, Sanechips Technology Co., Ltd
Sanechips Technology Co., Ltd, Sanechips Technology Co., Ltd, Sanechips Technology Co., Ltd, Sanechips Technology Co., Ltd, Sanechips Technology Co., Ltd, Sanechips Technology Co., Ltd, Sanechips Technology Co., Ltd
(16:20 - 16:40)
Abstract
RMo4C-4: A 23-30 GHz 4-Path Series-Parallel-Combined Class-AB Power Amplifier with 23 dBm Psat, 38.5% Peak PAE and 1.3° AM-PM Distortion in 40nm Bulk CMOS
Junjie Gu, Haoqi Qin, Hao Xu, Weitian Liu, Kefeng Han, Rui Yin, Lei Deng, Xiaoliang Shen, Zongming Duan, Hao Gao, Na Yan
Junjie Gu, Fudan Univ.
Fudan Univ., Fudan Univ., Institute of Microelectronics, Fudan Univ., Jiashan Fudan Institute,China, Institute of Microelectronics, National Integrated Circuit Innovation Center,Chin, National Integrated Circuit Innovation Center,Chin, East China Research Institute of Electronic Engineering, Technische Univ. Eindhoven, Fudan Univ.
(16:40 - 17:00)
Debo Chowdhury
Broadcom Corp.
Patrick Reynaert
KU Leuven

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23ABC
Abstract
This session presents LO generation solutions spanning from RF to THz frequencies, implemented in a wide diversity of silicon technologies. The first paper demonstrates a 15.6GHz multi-core VCO in 8nm FinFET achieving excellent phase noise and wide tuning range. The second paper presents a 10.8-14.5GHz 8-Phase LO Generator with Automatic Phase-and-Duty-Cycle Calibration for N-path receivers in 28nm CMOS. The third paper brings in a high fundamental rejection inductor-less frequency-doubler, operating from 2 to 20GHz in 45nm RF-SOI CMOS. The last paper discusses a 0.4 THz single-element radiator in 90nm SiGe BiCMOS, based on integrated PIN diode excitation at 100GHz.
Technical Papers
Abstract
RTu1A-1: A 15.6-GHz Quad-Core VCO with Extended Circular Coil Topology for Both Main and Tail Inductors in 8-nm FinFET Process
Suoping Hu, Zhiyu Chen, Wanghua Wu, Pei-Yuan Chiang, Zhanjun Bai, Chih-Wei Yao, Sangwon Son, Sukhwan Lim
Suoping Hu, Samsung Semiconductor, Inc.
Samsung Semiconductor, Inc., Samsung Semiconductor Inc., Samsung Semiconductor, Inc., Samsung, Samsung, Samsung, Samsung, Samsung
(08:00 - 08:20)
Abstract
RTu1A-2: A 10.8-14.5GHz 8-Phase 12.5%-Duty-Cycle Non-Overlapping LO Generator with Automatic Phase-and-Duty-Cycle Calibration for 60-GHz 8-Path-Filtering Sub-Sampling Receivers
Khoi PHAN, Yang Gao, Howard Luong
Khoi PHAN, Hong Kong Univ. of Science and Technology
Hong Kong Univ. of Science and Technology, Hong Kong Univ. of Science and Technology, Hong Kong Univ. of Science and Technology
(08:20 - 08:40)
Abstract
RTu1A-3: A 4.4mW Inductorless 2-20 GHz Single-Ended to Differential Frequency Doubler in 45 nm RFSOI CMOS Technology
Alexander Meyer, Michael Leyrer, Christian Ziegler, Martin Maier, Vincent Lammert, Vadim Issakov
Alexander Meyer, Technische Univ. Braunschweig
Technische Univ. Braunschweig, Infineon Technologies AG, Technische Univ. Braunschweig, Technische Univ. Braunschweig, Infineon Technologies AG, Technische Univ. Braunschweig
(08:40 - 09:00)
Abstract
RTu1A-4: An Efficient 0.4 THz Radiator with 20.6 dBm EIRP and 0.2% DC-to-THz Efficiency in 90nm SiGe BiCMOS
Sidharth Thomas, Sam Razavian, Aydin Babakhani
Sidharth Thomas, Univ. of California, Los Angeles
Univ. of California, Los Angeles, Univ. of California, Los Angeles, Univ. of California, Los Angeles
(09:00 - 09:20)
Andreia Cathelin
STMicroelectronics
Wanghua Wu
Samsung Semiconductor, Inc.
24ABC
Abstract
Several novel techniques for self-interference mitigation are presented, including cancellation of interference caused by one transmitter to another in a dual-radio SoC, a distributed cascode power amplifier for full-duplex wireless, advances in frequency-domain-equalization-based wideband self-interference cancellation, and low-noise self-interference cancellation in a receiver.
Technical Papers
Abstract
RTu1B-1: A 28nm CMOS Dual Band Concurrent WLAN and Narrow Band Transmitter with On-chip Feedforward TX-to-TX Interference Cancellation Path for Low Antenna-to-Antenna Isolation in IoT Devices
sai-wang (Rocco) Tam, Alden Wong, Alireza Razzaghi, Sridhar Narravula, Weiwei Xu, Timothy Loo, Akash Kambale, Andrew Liu, Ovidiu Carnu, Yui Lin, Randy Tsang
sai-wang (Rocco) Tam, NXP Semiconductors
NXP Semiconductors, NXP Semiconductors, NXP Semiconductors, NXP Semiconductors, NXP Semiconductors, NXP Semiconductors, NXP Semiconductors, NXP Semiconductors, NXP Semiconductors, NXP Semiconductors, NXP Semiconductors
(08:00 - 08:20)
Abstract
RTu1B-2: A Distributed Cascode Power Amplifier with an Integrated Analog SIC Filter for Full-Duplex Wireless Operation in 65 nm CMOS
Itamar Melamed, Nimrod Ginzberg, Omer Malka, Emanuel Cohen
Emanuel Cohen, Technion - Israel Institute of Technology
Technion - Israel Institute of Technology, Technion - Israel Institute of Technology, Technion - Israel Institute of Technology, Technion - Israel Institute of Technology
(08:20 - 08:40)
Abstract
RTu1B-3: Frequency-Domain-Equalization-based Full-Duplex Receiver with Passive-Frequency-Shifting N-Path Filters Achieving >53 dB SI Suppression Across a Record 160 MHz BW
Sastry Garimella, Sasank Garikapati, Aravind Nagulu, Igor Kadota, Alfred Davidson, Gil Zussman, Harish Krishnaswamy
Sastry Garimella, Columbia Univ.
Columbia Univ., Columbia Univ., Washington Univ. in St. Louis, Columbia Univ., Columbia Univ., Columbia Univ., Columbia Univ.
(08:40 - 09:00)
Abstract
RTu1B-4: A 0.5 GHz to 1.3 GHz Dual-Path Frequency-Translated Noise-Cancelling Self-Interference Canceller RX with 16.3 dBm SI Power-Handling in 65nm CMOS
Mostafa Essawy, Kareem Rashed, Amin Aghighi, Arun Natarajan
Mostafa Essawy, Oregon State Univ.
Oregon State Univ., Oregon State Univ., Oregon State Univ., Oregon State Univ.
(09:00 - 09:20)
Jin Zhou
MediaTek, Inc.
Oren Eliezer
Samsung Semiconductor, Inc.
25ABC
Abstract
This session reports circuits and systems advances in the mm-wave and sub-Terahertz bands, covering topics from radar sensing to metrology. We start with three papers on advances in the 76-81GHz radar sensors. First paper showcases a 5.5dB NF radar receiver in a 16nm FinFET followed by a wirelessly synchronized mono-/multistatic radar system. An 8dB NF mixer-first radar receiver with -5dBm IP1dB is also presented. We close with a focus on sensing advances at 160GHz operating frequency detailing a 0.05% resolution permittivity sensor at a 14us integration window utilizing a whispering gallery resonator and multifold noise reduction techniques in 28nm CMOS, followed by an 18GHz tuning range 130nm SiGe/BiCMOS full-duplex radar transceiver.
Technical Papers
Abstract
RTu1C-1: High-Linearity 76-81 GHz Radar Receiver with an Intermodulation Distortion Cancellation and High-Power Limiter
Naftali Landsberg, Meir Gordon, Omer Asaf, Nir Weisman, Kobi Ben Atar, Shunit Levin, Stefano Pellerano, Woorim Shin, Danniel Nahmanny
Naftali Landsberg, Mobileye
Mobileye, Mobileye, Mobileye, Mobileye, Mobileye, Mobileye, Intel Corp., Apple, Inc., Mobileye
(08:00 - 08:20)
Abstract
RTu1C-2: Mono/Multistatic Mode-Configurable E-band FMCW Radar Transceiver Module for Drone-Borne Synthetic Aperture Radar
Kangseop Lee, Sirous Bahrami, Kyunghwan Kim, Jiseul Kim, Seung-Uk Choi, Ho-Jin Song
Kangseop Lee, Pohang Univ. of Science and Technology
Pohang Univ. of Science and Technology, Pohang Univ. of Science and Technology, Pohang Univ. of Science and Technology, Pohang Univ. of Science and Technology, Pohang Univ. of Science and Technology, Pohang Univ. of Science and Technology
(08:20 - 08:40)
Abstract
RTu1C-3: A W-Band Spillover-Tolerant Mixer-First Receiver for FMCW Radars
Jingzhi Zhang, Sherif Ahmed, Amin Arbabian
Jingzhi Zhang, Stanford Univ.
Stanford Univ., Stanford Univ., Stanford Univ.
(08:40 - 09:00)
Abstract
RTu1C-4: A 160GHz Integrated Permittivity Sensor with Resolution of 0.05% ∆εr in 28nm CMOS
Hai Yu, Xuan Ding, Jingjun Chen, Sajjad Sabbaghi, Qun Jane Gu
Hai Yu, Univ. of California, Davis
Univ. of California, Davis, Univ. of California, Davis, Qualcomm Atheros, Inc., UC Davis, Univ. of California, Davis
(09:00 - 09:20)
Abstract
RTu1C-5: A 160-GHz FMCW Radar Transceiver with Slotline-based High Isolation Full-duplexer in 130nm SiGe BiCMOS Process
Xingcun Li, Huibo Wu, Shuyang Li, Wenhua Chen, Zhenghe Feng
Xingcun Li, Tsinghua Univ.
Tsinghua Univ., Tsinghua Univ., Tsinghua Univ., Tsinghua Univ., Tsinghua Univ.
(09:20 - 09:40)
Zeshan Ahmed
Texas Instruments
Ruonan Han
Massachusetts Institute of Technology

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24ABC
Abstract
This session shows the application of CMOS technology in several emerging applications. Within quantum technologies, an RF transmitter enabling magnetic sensing employing NV centers in diamond is demonstrated, followed by a cryogenic wireline transmitter for quantum processors. The next paper shows how silicon photonics can be employed to enhance the performance of an RF receiver. Finally, a mixer free built-in self-test (BIST) method for phase and amplitude calibration of a beamforming IC is presented.
Technical Papers
Abstract
RTu2B-1: A Diamond Quantum Magnetometer Based on a Chip-Integrated 4-way Transmitter in 130-nm SiGe BiCMOS
Hadi Lotfi, Michal Kern, Nico Striegler, Thomas Unden, Jochen Scharpf, Patrick Schalberger, Ilai Schwartz, Philipp Neumann, Jens Anders
Hadi Lotfi, Univ. of Stuttgart
Univ. of Stuttgart, Univ. of Stuttgart, NVision Imaging Technologies GmbH, Ulm, NVision Imaging Technologies GmbH, Ulm, NVision Imaging Technologies GmbH, Ulm, Univ. of Stuttgart, NVision Imaging Technologies GmbH, Ulm, NVision Imaging Technologies GmbH, Ulm, Univ. of Stuttgart
(10:10 - 10:30)
Abstract
RTu2B-2: A Cryo-CMOS DAC-based 40 Gb/s PAM4 Wireline Transmitter for Quantum Computing Applications
Niels Fakkel, Mohsen Mortazavi, Ramon Overwater, Fabio Sebastiano, Masoud Babaie
Niels Fakkel, Delft Univ. of Technology
Delft Univ. of Technology, Delft Univ. of Technology, Delft Univ. of Technology, Delft Univ. of Technology, Delft Univ. of Technology
(10:30 - 10:50)
Abstract
RTu2B-3: A mm-wave CMOS/Si-Photonics Hybrid-Integrated Software-Defined Radio Receiver Achieving > 80-dB Blocker Rejection
Ramy Rady, Yu-Lun Luo, Christi Madsen, Samuel Palermo, Kamran Entesari
Ramy Rady, Texas A&M Univ.
Texas A&M Univ., Texas A&M, Texas A&M, Texas A&M Univ., Texas A&M Univ.
(10:50 - 11:10)
Abstract
RTu2B-4: Mixer-Free Phase and Amplitude Comparison Method for Built-in Self-Test of Multiple Channel Beamforming IC
Seonjeong Park, Euntaek Sung, Seunghun Wang, Songcheol Hong
Seonjeong Park, Korea Advanced Institute of Science and Technology
Korea Advanced Institute of Science and Technology, Samsung Electronics Co., Ltd., Electronics and Telecommunications Research Institute, Korea Advanced Institute of Science and Technology
(11:10 - 11:30)
Fabio Sebastiano
Delft Univ. of Technology
Duane Howard
Amazon Web Services, Inc.
25ABC
Abstract
This session will focus on the system design and circuit implementation of millimeter-wave transceivers tailored for 5G and Satellite Communication systems. The first paper proposes a dual LO topology, which simplifies complexity of digital and baseband sections in phased array systems. The second paper focuses on a multi-channel phased array at 39 GHz with improved power amplifier efficiency. The third presentation describes the highly integrated baseband and IF section of an mm-wave radio for 5G, while the last presentation discusses an ultra-wide-band RF receiver with excellent NF, designed for SATCOM applications.
Technical Papers
Abstract
RTu2C-1: A 24-30 GHz 4-Stream CMOS Transceiver Based on Dual-LO Phase-Shifting Fully Connected Architecture Halving System Complexity and ADCs/DACs Overhead
Qingfeng Zhang, Yiming Yu, Dongming Duan, Xin Xie, Shaoyu Meng, Haoran Wang, Chenxi Zhao, Huihua Liu, Yunqiu Wu, Wenquan Che, Quan Xue, Kai Kang
Qingfeng Zhang, Univ. of Electronic Science and Technology of China
Univ. of Electronic Science and Technology of China, Univ. of Electronic Science and Technology of China, Univ. of Electronic Science and Technology of China, Univ. of Electronic Science and Technology of China, Univ. of Electronic Science and Technology of China, Univ. of Electronic Science and Technology of China, Univ. of Electronic Science and Technology of China, Univ. of Electronic Science and Technology of China, Univ. of Electronic Science and Technology of China, South China Univ. of Technology, South China Univ. of Technology, Univ. of Electronic Science and Technology of China
(10:10 - 10:30)
Abstract
RTu2C-2: A 39 GHz 2×16-Channel Phased-Array Transceiver IC With Compact, High-Efficiency Doherty Power Amplifiers
Joonho Jung, Jooseok Lee, Daehyun Kang, Jinhyun Kim, Woojae Lee, Hansik Oh, Jae-hong Park, Kihyun Kim, Dong-hyun Lee, Sangho Lee, Jeong Ho Lee, Ji Hoon Kim, Younghwan Kim, Taewan Kim, Sangyong Park, Seungwon Park, Seungjae Baek, Bohee Suh, Soyoung Oh, Dongsoo Lee, Juho Son, Sung-gi Yang
Joonho Jung, Samsung Electronics Co., Ltd.
Samsung Electronics Co., Ltd., Samsung Electronics Co., Ltd., Samsung Electronics Co., Ltd., Samsung Electronics Co., Ltd., Samsung Electronics Co., Ltd., Samsung Electronics Co., Ltd., Samsung Electronics Co., Ltd., Samsung Electronics Co., Ltd., Samsung Electronics Co., Ltd., Samsung Electronics Co., Ltd., Samsung Electronics Co., Ltd., Samsung Electronics Co., Ltd., Samsung Electronics Co., Ltd., Samsung Electronics Co., Ltd., Samsung Electronics Co., Ltd., Samsung Electronics Co., Ltd., Samsung Electronics Co., Ltd., Samsung Electronics Co., Ltd., Samsung Electronics Co., Ltd., Samsung Electronics Co., Ltd., Samsung Electronics Co., Ltd., Samsung Electronics Co., Ltd.
(10:30 - 10:50)
Abstract
RTu2C-3: A 14-nm Low-Cost IF Transceiver IC with Low-Jitter LO and Flexible Calibration Architecture for 5G FR2 Mobile Applications
Wanghua Wu, Frank Lau, Tay Kang, Kim Lau, Siwook Yoo, Xingliang Zhao, Ashutosh Verma, Ivan Lu, Chih-Wei Yao, Jeiyoung Lee, Hou-shin Chen, Gennady Feygin, Pranav Dayal, Kee-Bong Song, Sangwon Son
Wanghua Wu, Samsung Semiconductor, Inc.
Samsung Semiconductor, Inc., Samsung Semiconductor, Inc., tay.kang@samsung.com, Samsung Semiconductor, Inc., Samsung Semiconductor, Inc., Samsung Semiconductor, Inc., Samsung Semiconductor, Inc., Samsung Semiconductor, Inc., Samsung Semiconductor, Inc., Samsung Electronics Co., Ltd., Samsung Semiconductor, Inc., Samsung Semiconductor, Inc., Samsung Semiconductor, Inc., Samsung Semiconductor, Inc., Samsung Semiconductor, Inc.
(10:50 - 11:10)
Abstract
RTu2C-4: A Quad-Band RX Phased-Array Receive Beamformer with Two Simultaneous Beams, Polarization Diversity, and 2.1–2.3 dB NF for C/X/Ku/Ka-Band SATCOM
Zhaoxin Hu, Oguz Kazan, Gabriel Rebeiz
Zhaoxin Hu, Univ. of California, San Diego
Univ. of California, San Diego, Qualcomm Technologies, Inc., Univ. of California, San Diego
(11:10 - 11:30)
Bodhisatwa Sadhu
IBM T.J. Watson Research Center
Raja Pullela
MaxLinear, Inc.

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24ABC
Abstract
This session includes four papers on mm-wave key components and receivers. It starts from a compact active quasi-circulator with ultra-wideband TX to RX isolation over 20-38.5 GHz in 28nm CMOS. The second paper presents a new D-band phase shifter concept based on delay manipulating and achieves RMS phase error of 1.2 degrees without calibration in 45nm RFSOI. The next two papers are high performance receivers. The first paper presents a 140GHz 4-element RF beam forming receiver, achieving >20 dB IRR with 8 GHz channel bandwidth in 22nm FDSOI. The final is an N-path filter based block-tolerant receiver with
Technical Papers
Abstract
RTu3B-1: An Ultra-Wideband and Compact Active Quasi-Circulator With Phase Alternated Differential Amplifier
Dongho Yoo, Jun Hwang, Byung-Wook Min
Dongho Yoo, Yonsei Univ.
Yonsei Univ., Yonsei Univ., Yonsei Univ.
(13:30 - 13:50)
Abstract
RTu3B-2: A D-band Calibration-Free Passive 360° Phase Shifter With 1.2° RMS Phase Error in 45 nm RFSOI
Mohammadreza Abbasi, Wooram Lee
Mohammadreza Abbasi, Pennsylvania State Univ.
Pennsylvania State Univ., Pennsylvania State Univ.
(13:50 - 14:10)
Abstract
RTu3B-3: A 140GHz RF Beamforming Phased-Array Receiver Supporting >20dB IRR with 8GHz Channel Bandwidth at Low IF in 22nm FDSOI CMOS
Shenggang Dong, Navneet Sharma, Sensen Li, Michael Chen, Xiaohan Zhang, Yaolong Hu, Jiantong Li, Yong Su, Xinguang Xu, Vitali Loseu, Eunyoung Seok, Taiyun Chi, Won-Suk Choi, Gary Xu
Shenggang Dong, Samsung Research America
Samsung Research America, Samsung Research America, Samsung Research America, Samsung Research America, Rice Univ., Rice Univ., Samsung Research America, Samsung Research America, Samsung Research America, Samsung Research America, Samsung Research America, Rice Univ., Samsung Research America, Samsung Research America
(14:10 - 14:30)
Abstract
RTu3B-4: A mm-Wave Blocker-Tolerant Receiver Achieving <4 dB NF and -3.5 dBm B1dB in 65-nm CMOS
Erez Zolkov, Nimrod Ginzberg, Emanuel Cohen
Erez Zolkov, Technion - Israel Institute of Technology
Technion - Israel Institute of Technology, Technion - Israel Institute of Technology, Technion - Israel Institute of Technology
(14:30 - 14:50)
Yahya Tousi
Univ. of Minnesota
Qun Jane Gu
Univ. of California, Davis
25ABC
Abstract
In this session, we present papers addressing IoT transmitter and sub-THz PAs. The first paper presents a passive mixer in 22nm FD-SOI technology for low power cartesian transmitter. The second paper showcases a D-band SiGe HBT PA module providing high output power (>20dBm) and linearity from 110 to 170GHz. The third paper demonstrates a transformer-based InP HBT PA with high linear power (20dBm) and efficiency (>20%) in D-Band. The last paper presents a SiGe HBT PA operating at 300GHz in a 130nm BiCMOS technology using capacitive feedback.
Technical Papers
Abstract
RTu3C-1: A Reactive Passive Mixer for 16-QAM Cartesian IoT Transmitters in 22 nm FD-SOI CMOS
Lorenzo Tomasin, Daniele Vogrig, Andrea Neviani, Andrea Bevilacqua
Lorenzo Tomasin, Univ. of Padova
Univ. of Padova, Univ. of Padova, Univ. of Padova, Univ. of Padova
(13:30 - 13:50)
Abstract
RTu3C-2: A 110-170 GHz Phase-Invariant Variable-Gain Power Amplifier Module with 20-22 dBm Psat and 30 dBm OIP3 Utilizing SiGe HBT RFICs
Mustafa Sayginer, Michael Holyoak, Mike Zierdt, Mohamed Elkhouly, Joe Weiner, Yves Baeyens, Shahriar Shahramian
Mustafa Sayginer, Bell Labs
Bell Labs, Bell Laboratories, Nokia, Bell Laboratories, Nokia, Bell Laboratories, Nokia, Bell Laboratories, Nokia, Bell Laboratories, Nokia, Bell Laboratories, Nokia
(13:50 - 14:10)
Abstract
RTu3C-3: A D-band 20.4 dBm OP1dB Transformer-Based Power Amplifier With 23.6% PAE In A 250-nm InP HBT Technology
Senne Gielen, Yang Zhang, Mark Ingels, Patrick Reynaert
Senne Gielen, KU Leuven
KU Leuven, IMEC, IMEC, KU Leuven
(14:10 - 14:30)
Abstract
RTu3C-4: 305-GHz Cascode Power Amplifier Using Capacitive Feedback Fabricated Using SiGe HBT’s with fmax of 450 GHz
Suprovo Ghosh, Frank Zhang, Haidong Guo, Kenneth O
Suprovo Ghosh, Univ. of Texas at Dallas
Univ. of Texas at Dallas, Univ. of Texas at Dallas, Univ. of Texas at Dallas, Univ. of Texas at Dallas
(14:30 - 14:50)
Alexandre Giry
CEA-LETI
Hyunchul Park
Samsung Electronics Co., Ltd.

-

25ABC
Abstract
This session is dedicated to industry presentations. The first presentation will be on recent research results on D-band circuits and systems implemented in 55nm SiGe BiCMOS Technology. The second presentation will discuss thermal challenges in GaAs PAs for 5G applications. The last talk will present recent results on PAs implemented in 22nm FDSOI technology with EDMOS.
Technical Papers
Abstract
RTu4C-1: D-band circuits and systems application in 55nm SiGe BiCMOS
Andrea Pallotta, Pascal Roux, David delrio, Juan Francisco Sevillano, Mahmoud Pirbazari, Andrea Mazzanti, Vladimir Ermolov, Jussi Säily, Mario Giovanni Frecassetti, Maurizio Moretto
Andrea Pallotta, St Microelectronics
St Microelectronics, Nokia Bell-Labs France, Ceit & Tecnun-University of Navarra, Ceit & Tecnun – University of Navarra, STMicroelectronics S.R.L., Univ. of Pavia, VTT Technical Research Centre of Finland Ltd, VTT Technical Research Centre of Finland Ltd, Nokia, Nokia
(15:40 - 16:00)
Abstract
RTu4C-2: Thermal challenges in GaAs PA design for 5G applications
Sheng Hung Tsai, Chih Sheng Yeh, Clement Potier, Bharat Thota, Henrik Andersen, Brecht Francois
Sheng Hung Tsai, iCana Ltd.
iCana Ltd., iCana, iCana, iCana, iCana, iCana
(16:00 - 16:20)
Abstract
RTu4C-3: 22FDX® EDMOS for 5G mmW Power Amplifier Applications
Ming-Cheng Chang, Zaid Al-Husseini, Shafi Syed, Shih Ni Ong, Lye Hock Kelvin Chan, Wafa Arfaoui, Dieter Lipp, Elan Veeramani, Jerome Mazurier, Andreas Knorr, Nick Comfoltey, Tianbing Chen
Ming-Cheng Chang, GLOBALFOUNDRIES
GLOBALFOUNDRIES, GLOBALFOUNDRIES, GLOBALFOUNDRIES, GLOBALFOUNDRIES, GLOBALFOUNDRIES, GLOBALFOUNDRIES, GLOBALFOUNDRIES, GLOBALFOUNDRIES, GLOBALFOUNDRIES, GLOBALFOUNDRIES, GLOBALFOUNDRIES, GLOBALFOUNDRIES
(16:20 - 16:40)
Debopriyo Chowdhury
Broadcom Corp.