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Susnata Mondal
Intel Corp.
Arun Paidimarri
IBM T.J. Watson Research Center
Location
252AB
Abstract
This session presents recent advances in highly integrated RF transceiver and beamforming architectures that enable next‑generation wireless infrastructure and high‑resolution sensing. The talks span a wide range of mmWave applications, including a 57–67 GHz four‑channel transmitter with fine‑resolution phase shifting and built‑in self‑test for Doppler‑offset FMCW radar, a high‑linearity K‑band multi‑beam transmitter IC targeting LEO SATCOM, and a high‑power SiGe TXSIP delivering more than 32 dBm across the 71–86 GHz E‑band for point‑to‑point backhaul. Complementing these mmWave front‑ends, the session also features a single‑chip ORAN‑compliant 4TX‑4RX 5G radio‑unit transceiver that bridges Ethernet to RF for compact, power‑efficient base‑station deployments.
Technical Papers
Abstract
Mo1A-1: Ethernet to RF: Single Chip ORAN 4TX/4RX 5G Radio Unit Base Station Transceiver
Kevin Gard, Jianxun Fan, Dicle Ozis, Gord Allan, Kashif Sheikh, Justin Fortier, Bing Zhao, Tony Montalvo, David McLaurin, Benjamin Babjak, Ionel Gheorghe, Bruce Wilcox, Adam Bray, Manish Manglani
Kevin Gard, Analog Devices
Analog Devices, Analog Devices, Inc., Analog Devices, Inc., Analog Devices, Inc., Analog Devices, Analog Devices, Inc., Analog Devices, Inc., Analog Devices, Inc., Analog Devices, Inc., Analog Devices, Inc., Analog Devices, Inc., Analog Devices, Inc., Analog Devices, Inc., Analog Devices, Inc.
(08:00 - 08:20)
Abstract
Mo1A-2: A 57-67 GHz +14 dBm 4-Channel Transmitter With 7-Bit Phase Shifter and Built-In Self-Test for Doppler-Offset Doppler Division Multiplexing FMCW Radar
Jeff Shih-Chieh Chien, Samrat Dey, Ying Chen, Mingyuan Li, Ivan Siu-Chuang Lu, Tienyu Chang, Wanghua Wu, Joonhoi Hur
Jeff Shih-Chieh Chien, Samsung Semiconductor, Inc.
Samsung Semiconductor, Inc., Samsung Semiconductor, Inc., Samsung Semiconductor, Inc., Samsung Semiconductor, Inc., Samsung Semiconductor, Inc., Samsung Semiconductor, Inc., Samsung Semiconductor, Inc., Samsung Semiconductor, Inc.
(08:20 - 08:40)
Abstract
Mo1A-3: A K-Band Fully-Connected 4-Channel Beamforming Transmitter IC for LEO SATCOM in 65nm CMOS
Jongho Yoo, Junhan Lim, Seong-Mo Moon, Hakmin Lee, Hongkie Lim, Dong-pil Chang
Jongho Yoo, ETRI
ETRI, ETRI, ETRI, ETRI, ETRI, ETRI
(08:40 - 09:00)
Abstract
Mo1A-4: A SiGe TXSIP for E-Band Point-to-Point Systems from 71 to 86 GHz with >32 dBm Output Power
Christoph Steinbrecher, Fatih Kocer, Julio Canelo, Ekrem Oran, Ozgun Serttek, Kasim Ayyildiz, Santosh Kudtarkar, Arun Raj, Sacid Oruc, Mete Coskun
Christoph Steinbrecher, Analog Devices
Analog Devices, Analog Devices, Analog Devices, Analog Devices, Analog Devices, Analog Devices, Analog Devices, Analog Devices, Analog Devices, Analog Devices
(09:00 - 09:20)
Teerachot Siriburanon
Univ. College Dublin
Hanli Liu
Zhejiang Univ.
Location
254AB
Abstract
This session features four papers on high-performance Ku- and Ka-band CMOS oscillators utilizing innovative architectures—including triple-tank resonators for flicker-noise suppression, area-efficient Gm boosted cores, series-resonance tank with 3rd harmonic extraction, and quad-mode inductive switching. These designs achieve high figures-of-merit and ultra-wide tuning ranges across a frequency span of 9.9 to 30 GHz, addressing key challenges in next-generation frequency synthesis.
Technical Papers
Abstract
Mo1B-1: A 12-16.3-GHz 197.7-dBc/Hz-FOMT Harmonic-Shaping VCO Using Enhanced Common-Mode Resonance Expansion Based on a Triple-Tank Coupled Resonator
Jin Zhang, Miao Yu, Kaixue Ma
Miao Yu, Tianjin Univ.
Tianjin Univ., Tianjin Univ., Tianjin Univ.
(08:00 - 08:20)
Abstract
Mo1B-2: A 15–18.3 GHz Upper Ku-Band LC-VCO Achieving 201 dBc/Hz FoMA in 65-nm CMOS
Alan Nelson, Adarsh Yadav, Narahari N. Moudhgalya, Abhishek Srivastava
Abhishek Srivastava, IIIT, Hyderabad
IIIT, Hyderabad, IIIT, Hyderabad, IIIT, Hyderabad, IIIT, Hyderabad
(08:20 - 08:40)
Abstract
Mo1B-3: Cross-Coupled CMOS Series-Resonance VCO with 3rd-Harmonic Output and -142 dBc/Hz Phase Noise at 10 MHz Offset from 29.7 GHz
KEMAL VURAL, ANDREA BILATO, Guglielmo De Filippi, Andrea MAZZANTI
KEMAL VURAL, Univ. of Pavia
Univ. of Pavia, FONDAZIONE CHIPS-IT, FONDAZIONE CHIPS-IT, Univ. of Pavia
(08:40 - 09:00)
Abstract
Mo1B-4: A Fundamental 9.9-to-30GHz 207dBc/Hz FoMT Quad-Core Quad-Mode VCO Utilizing One-Coil-For-All Mechanism in 40nm CMOS
Changqi Zhou, Hao He, Haobin He, Hanlin Yang, Yi Liu, Zuojun Wang, Bin Li, Xiang Yi, Zhijian Chen
Changqi Zhou, South China Univ. of Technology
South China Univ. of Technology, National Univ. of Singapore, South China University of Techonology, Hong Kong Univ. of Science and Technology, Hong Kong Univ. of Science and Technology, City Univ. of Hong Kong, South China Univ. of Technology, South China University of Techonology, South China University of Techonology
(09:00 - 09:20)
ZHIMING DENG
MediaTek, Inc.
Song Hu
Apple, Inc.
Location
257AB
Abstract
This session highlights circuit techniques that advance fully digital PAs and transmitters toward higher output power, broader bandwidth, and cleaner spectra. It begins with a reconfigurable multi-standard IoT digital transmitter using IQ-shared PA. Next, a 28.5 dBm all-digital Wi-Fi 7 polar transmitter employing triple-stacked class-G Doherty PA is demonstrated. The third paper presents a Wi-Fi Doherty polar transmitter that suppresses out-of-channel noise using a mixed-domain FIR technique. The session concludes with a wideband RF power DAC achieving −47.2dB EVM.
Technical Papers
Abstract
Mo1C-1: A 2.4-GHz Reconfigurable Digital Transmitter with Three-Vector-Synthesized IQ-Shared PA and Envelope Rotation Calibration for Multi-Standard IoT Applications
Linhao Ma, Zongle Ma, Qing Li, Hui Zhang, Dong Liang, Kai Li, Huan Yan, Keping Wang
Keping Wang, Tianjin Univ.
Tianjin Univ., Tianjin Univ., Tianjin Univ., Tianjin Univ., Tianjin Univ., Tianjin Univ., Tianjin Univ., Tianjin Univ.
(08:00 - 08:20)
Abstract
Mo1C-2: A 28.5dBm 3.3V/1.1V All-Digital Wi-Fi 7 Polar Transmitter employing Triple-Stacked Doherty Class-G SC-DPA in 14 nm Fin-FET
Naor Shay, Elad Solomon, David Ben-Haim, Eran Socher, Ofir Degani
Naor Shay, Tel-Aviv Univ.
Tel-Aviv Univ., Intel Corp., Intel Corp., Tel-Aviv Univ., Intel Corp.
(08:20 - 08:40)
Abstract
Mo1C-3: +28.5dBm 5-7GHz FIR and Doherty Polar DTX Achieving -155dBc/Hz OOC Noise for WiFi MLO Applications
Eli Borokhovich, Eran Socher, Ofir Degani
Eli Borokhovich, Intel Corp.
Intel Corp., Tel-Aviv Univ., Intel Corp.
(08:40 - 09:00)
Abstract
Mo1C-4: A 12 bit, 1.3 GHz to 4.7 GHz Switched Current Source RF Power-DAC achieving -47.2 dB EVM for 4096-QAM
Manuel Wittlinger, Jakob Finkbeiner, Raphael Nägele, Markus Grözing, Manfred Berroth, Georg Rademacher
Manuel Wittlinger, Univ. of Stuttgart
Univ. of Stuttgart, Univ. of Stuttgart, Univ. of Stuttgart, Univ. of Stuttgart, Univ. of Stuttgart, Univ. of Stuttgart
(09:00 - 09:20)
Sushil Subramanian
Intel Corp.
Mohamed Ibrahim
Cornell Univ.
Location
253ABC
Abstract
The future of computing requires innovations in connectivity and architectures that can solve complex problems. This session presents novel components that enable the next wave of high-speed connectivity solutions to meet today’s significant compute demand. Innovative wide-band circuit components driven by new technologies such as phase-change materials and high-speed NPN-PNP bipolar transistor architecture will be presented. In addition, the session showcases a high-speed galvanically isolated data link. Finally, a cryogenic controller for color centers in diamond will be introduced to enable scalable quantum computing and networking.
Technical Papers
Abstract
Mo1D-1: Low Cost Wideband Continuous-Time Linear Equalizers (CTLE) based on SiGe BiCMOS Phase Change Material (PCM) Switches
Tian Liang, Mir Mahmud, Hasan Al-Rubaye, Gabriel Rebeiz
Tian Liang, Univ. of California, San Diego
Univ. of California, San Diego, Univ. of California, San Diego, Univ. of California, San Diego, Univ. of California, San Diego
(08:00 - 08:20)
Abstract
Mo1D-2: A 1.28 pJ/b 32 Gb/s Digital Isolator Using Coupled-Line Transformer for High-Speed Data Links
Jinyu Zhang, Rongxiang Wu, Yan Huo, Zheng Wang
Jinyu Zhang, Univ. of Electronic Science and Technology of China
Univ. of Electronic Science and Technology of China, Univ. of Electronic Science and Technology of China, Univ. of Electronic Science and Technology of China, Univ. of Electronic Science and Technology of China
(08:20 - 08:40)
Abstract
Mo1D-3: A pnp-npn Folded Cascode 240-GS/s 2-to-1 Analog Multiplexer in Complementary 130-nm SiGe BiCMOS
Maaz Khurram, Truman Jian, Peter Schvan, Sorin Voinigescu
Sorin Voinigescu, Univ. of Toronto
Univ. of Toronto, Univ. of Toronto, Ciena, Corp., Univ. of Toronto
(08:40 - 09:00)
Abstract
Mo1D-4: A Cryo-CMOS Electron/Nuclear Spin Controller with Combined GHz/MHz Drivers for Color-Center Qubits
Mohamed Elbadry, Niels Fakkel, Luc Enthoven, Fabio Sebastiano, Masoud Babaie
Mohamed Elbadry, Delft Univ. of Technology
Delft Univ. of Technology, Delft Univ. of Technology, Delft Univ. of Technology, Delft Univ. of Technology, Delft Univ. of Technology
(09:00 - 09:20)

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Najme Ebrahimi
Northeastern University
Muhammad Waleed Mansha
Nokia-Bell Labs
Location
252AB
Abstract
This session highlights state-of-the-art mmWave and sub‑THz transmitters and receivers, spanning a heterogeneously integrated InP–FinFET CMOS sliding‑IF transmitter, a packaged InP HBT transceiver module, emerging direct digital demodulation architectures, advanced glass/antenna-in-package integration, a D‑band receiver with injection‑locking–based quadrature correction, and a 28‑nm CMOS transceiver enabling dielectric waveguide (DWG) communication.
Technical Papers
Abstract
Mo2A-1: INFINITY: A 245-310 GHz InP-FinFET CMOS Co-packaged Sliding-IF Transmitter with On-Chip Resonant Cavity Antenna
Berke Gungor, Senne Gielen, Yang Zhang, Mark Ingels, Patrick Reynaert
Berke Gungor, KU Leuven
KU Leuven, KU Leuven, IMEC, IMEC, KU Leuven
(10:10 - 10:30)
Abstract
Mo2A-2: A Novel 128 GHz 8-PSK Receiver Using an On-Chip Multi-Probed Interferometer for Direct Phase-to-Bits Demodulation
Runzhou Chen, Hao-Yu Chien, Boxun Yan, Chao-Jen Tien, Mau-Chung Frank Chang
Runzhou Chen, Univ. of California, Los Angeles
Univ. of California, Los Angeles, Univ. of California, Los Angeles, Univ. of California, Los Angeles, Univ. of California, Los Angeles, Univ. of California, Los Angeles
(10:30 - 10:50)
Abstract
Mo2A-3: Antenna-Integrated, Chip-Embedded Glass Packaging of 200-GHz Transceiver Modules
Yuya Nemoto, Xingchen Li, Madhavan Swaminathan, Mark Rodwell
Yuya Nemoto, Univ. of California, Santa Barbara
Univ. of California, Santa Barbara, Georgia Institute of Technology, Georgia Institute of Technology, Univ. of California, Santa Barbara
(10:50 - 11:10)
Abstract
Mo2A-4: A 240Gb/s 0.51pJ/b D-Band Direct-Conversion Receiver with Injection-Locking Based Quadrature Correction in 28nm CMOS
Xiaohan Shen, Xiaodi Feng, Siyu Men, Haoyu Zhu, Ningsheng Xu, Chen Jiang
Xiaohan Shen, Fudan Univ.
Fudan Univ., Fudan Univ., Fudan Univ., Fudan Univ., Fudan Univ., Fudan Univ.
(11:10 - 11:30)
Abstract
Mo2A-5: A 138-GHz Dielectric Waveguide Link with 4.87 pJ/bit Efficiency in 28-nm CMOS
Jiacheng Guo, Xinsheng Cheng, Yixia Wang, Yuchi Liu, Jizhao Li, Li Du, Yuan Du
Jiacheng Guo, Nanjing Univ.
Nanjing Univ., Nanjing Univ., Nanjing Univ., Nanjing Univ., Nanjing Univ., Nanjing Univ., Nanjing Univ.
(11:30 - 11:50)
Alexandre Siligaris
CEA-LETI
Salvatore Finocchiaro
QORVO, Inc.
Location
254AB
Abstract
This session presents advanced CMOS frequency-generation circuits, including a D-band self calibrated quadrature generator, two E-band low-phase-noise LO with quadrature calibration and with harmonic extraction, and a series resonance 40 GHz VCO.
Technical Papers
Abstract
Mo2B-1: A 140-GHz 9-mW Self-Calibrating Quadrature Generator
Long Kong
Long Kong, Fudan Univ.
Fudan Univ.
(10:10 - 10:30)
Abstract
Mo2B-2: An 85.5-to-94.5-GHz W-Band Fully-Symmetric Quadrature LO Generator with a Fast Quadrature Calibration Technique, Achieving Closely Matched 61-fs RMS Jitter and 41-dB IRR
Sarang Lee, Seohee Jung, Seohyeon Kwak, Seungjae Lee, Hoojung Lee, Jaehyouk Choi
Sarang Lee, Seoul National Univ.
Seoul National Univ., Seoul National Univ., Seoul National Univ., Seoul National Univ., Seoul National Univ., Seoul National Univ.
(10:30 - 10:50)
Abstract
Mo2B-3: A 69.2-85.6-GHz LO Generator Achieving 192.2-dBc/Hz FoM and 201.4-dBc/Hz FoMA with Current-Reused Coupled Frequency Tripler and Implicit Ninth Harmonic Extraction in 65nm CMOS
Shuo Tian, Kaitian Yang, Yong Chen, Xiaolong Liu
Shuo Tian, Southern Univ. of Science and Technology
Southern Univ. of Science and Technology, Southern Univ. of Science and Technology, Tsinghua Univ., Southern Univ. of Science and Technology
(10:50 - 11:10)
Abstract
Mo2B-4: A 40-GHz Series-Resonance VCO with Windmill-Coupled F-Type Inductive Network Achieving –132.36 dBc/Hz PN at a 10-MHz Offset
Chen Yu, Changwenquan Song, Shiyuan Zheng, Liang Wu
Chen Yu, The Chinese University of Hong Kong (Shenzhen)
The Chinese University of Hong Kong (Shenzhen), The Chinese University of Hong Kong (Shenzhen), The Chinese University of Hong Kong (Shenzhen), The Chinese University of Hong Kong (Shenzhen)
(11:10 - 11:30)
Andreia Cathelin
STMicroelectronics
Tolga Dinc
Texas Instruments
Location
257AB
Abstract
This session highlights recent advances in LEO SATCOM and FR3 transmitter front-ends and power amplifiers, covering devices, circuits, packaging, and design automation. The first paper demonstrates a high-power, high-efficiency complementary BiCMOS PA using both high-speed NPN and PNP devices. The second introduces a Ka-band 4-element beamforming transmitter front-end for LEO ground terminals with a negative-feedback-based interstage matching network. The third presents a compact, watt-level, thermally robust BiCMOS flip-chip PA module for SATCOM transmit front-ends. The final paper showcases a fast specs-to-silicon mmWave RFIC design framework using AI-assisted specs-to-layout with layout-to-silicon constraint integration.
Technical Papers
Abstract
Mo2C-1: A High Performance Complementary SiGe HBT Power Amplifier With A Three Conductor Coupled Line Four-Way Wilkinson Combiner Balun for Emerging K-band LEO SATCOM Transmit Front-End IC
Seungkyun Lee, Yoongoo Kang, Inchan Ju
Seungkyun Lee, Ajou Univ.
Ajou Univ., Ajou Univ., Ajou Univ.
(10:10 - 10:30)
Abstract
Mo2C-2: A Ka-Band CMOS 4-Element Beamforming Transmitter for LEO SATCOM using PA with Negative-Feedback-Based Interstage Matching Network and Asymmetric Wilkinson Power Divider
Wonseob Lee, Hyungju Kim, Hyeonwon Song, Mingyu Lee, Sunwoo Kong, Seunghyun Jang, Hui-Dong Lee, Bonghyuk Park, Seungchan Lee, Jinseok Park
Wonseob Lee, Chonnam National Univ.
Chonnam National Univ., Chonnam National Univ., Chonnam National Univ., Chonnam National Univ., ETRI, ETRI, ETRI, ETRI, Chonnam National Univ., Ulsan National Institute of Science and Technology (UNIST)
(10:30 - 10:50)
Abstract
Mo2C-3: A Watt-level, Thermally Reliable Ku-band SiGe HBT Cascode Flip-Chip Power Amplifier Module Using an Optimal IC-to-Package ElectroThermal Codesign for LEO SATCOM Transmit Front-End
Seungpyo Han, Minchul Kim, Inchan Ju
Seungpyo Han, Ajou Univ.
Ajou Univ., MMII Laboratory, Ajou Univ.
(10:50 - 11:10)
Abstract
Mo2C-4: Top-Metal-Only RFIC Retargeting for Fast Specs-to-Silicon Iteration Enabled by AI-Assisted Inverse Design
Chenhao Chu, Yuqi Liu, Yizhou Xu, Shouqing Fu, Takuma Torii, Shintaro Shinjo, Andreas Burg, Hua Wang
Chenhao Chu, ETH Zurich
ETH Zurich, ETH Zurich, ETH Zurich, École Polytechnique Fédérale de Lausanne, Mitsubishi Electric Corp., Mitsubishi Electric Corp., École Polytechnique Fédérale de Lausanne, ETH Zurich
(11:10 - 11:30)

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Hsieh-Hung Hsieh
Taiwan Semiconductor Manufacturing Co., Ltd.
Shintaro Shinjo
Mitsubishi Electric Corp.
Location
252AB
Abstract
The broadband circuit performance is critical for high-data-rate communications and to cover different frequency bands. In this session, various design techniques on broadband RF amplifiers and switches are introduced. For RF amplifiers, in addition to distributed topologies, a reconfigurable architecture is adopted. As for RF switches, a distributed structure as well as power combining is illustrated. These papers demonstrate the state-of-the-art performance under broadband operations.
Technical Papers
Abstract
Mo3A-1: A 2-to-18 GHz Reconfigurable LNA Using Direction Switchable Coupling Presenting 0.78-to-1.24 dB NF in 0.15-μm GaAs pHEMT
Hao Ning, Zhaowu Wang, Yijie Zhang, Xinyan Li, Xiaochen Tang, Yong Wang
Xinyan Li, Univ. of Electronic Science and Technology of China
Univ. of Electronic Science and Technology of China, Univ. of Electronic Science and Technology of China, Univ. of Electronic Science and Technology of China, Univ. of Electronic Science and Technology of China, Univ. of Electronic Science and Technology of China, Univ. of Electronic Science and Technology of China
(13:30 - 13:50)
Abstract
Mo3A-2: MIM Capacitor-Assisted Inverse Design of Nonintuitive Amplifiers
Vinay Chenna, Hossein Hashemi
Vinay Chenna, Univ. of Southern California
Univ. of Southern California, Univ. of Southern California
(13:50 - 14:10)
Abstract
Mo3A-3: A Broadband Distributed Low-Noise Amplifier with Full-Band Noise Optimization and Built-In Balun
Yidong Fang, Lianbo Liu, Hao Guo, Taiyun Chi, Sensen Li
Yidong Fang, Univ. of Texas at Austin
Univ. of Texas at Austin, Univ. of Texas at Austin, Rice Univ., Rice Univ., Univ. of Texas at Austin
(14:10 - 14:30)
Abstract
Mo3A-4: A Broadband Distributed Amplifier Extending the Operation Frequency to 0.944fT
Jianquan Hu, Changzi Xie, Fanyi Meng, Kaixue Ma
Jianquan Hu, Tianjin Univ.
Tianjin Univ., China Academy of Engineering Physics, Tianjin Univ., Tianjin Univ.
(14:30 - 14:50)
Abstract
Mo3A-5: A DC-to-170GHz Broadband Distributed SPDT-Switch and Power-Combiner Combo with Source Switch Control
Yidong Fang, Lianbo Liu, Song Hang Chai, Hang Wang, Taiyun Chi, Sensen Li
Yidong Fang, Univ. of Texas at Austin
Univ. of Texas at Austin, Univ. of Texas at Austin, Univ. of Texas at Austin, Rice Univ., Rice Univ., Univ. of Texas at Austin
(14:50 - 15:10)
Tong Zhang
Google
Jesse Moody
Univ. of Maryland
Location
254AB
Abstract
This session presents cutting-edge advancements in frequency conversion and filtering for wireless receivers, spanning FR3 to W-band frequencies. Featured papers introduce novel circuit architectures, including passive mixer-first diplexers, subharmonic mixers, and switched-Gm topologies, all optimized for high linearity and low noise. These works collectively push the performance boundaries of integrated front-ends for next-generation communication systems.
Technical Papers
Abstract
Mo3B-1: A W-Band Low-Noise Switched-Gm Down-Conversion Mixer with Gm-Boosting Feedback and Trifilar Transformer in 65-nm CMOS
Benqing Guo, Jing Gong, Jun Chen
Benqing Guo, Chengdu University of Information Technology
Chengdu University of Information Technology, West China Hospital, Sichuan University, Huawei Technologies Co., Ltd.
(13:30 - 13:50)
Abstract
Mo3B-2: A Broadband Fully-Distributed Mixer-First Receiver Achieving 40-128 GHz RF Bandwidth
Zhaojing Fu, Hao Yu, Gerald Topalli, Taiyun Chi, Sensen Li
Zhaojing Fu, Univ. of Texas at Austin
Univ. of Texas at Austin, Univ. of Texas at Austin, Rice Univ., Rice Univ., Univ. of Texas at Austin
(13:50 - 14:10)
Abstract
Mo3B-3: An FR3 Simultaneous Dual-Carrier Passive Mixer-First Diplexer Receiver Front-End Achieving 6.4 dB NF and -3.2 dBm B1dB
Jamie Ye, Alain Antón, Alyosha Molnar
Alain Antón, Cornell Univ.
Cornell Univ., Cornell Univ., Cornell Univ.
(14:10 - 14:30)
Abstract
Mo3B-4: A 6GHz 3X Subharmonic Mixer with 12.4-dB Conversion Gain and 73-dB Fundamental Rejection
Ahmed Aboulsaad, Zhuoran Wu, Noah Levy, Jacques Rudell
Ahmed Aboulsaad, Univ. of Washington
Univ. of Washington, Univ. of Washington, Univ. of Washington, Univ. of Washington
(14:30 - 14:50)
Abstract
Mo3B-5: A 1.5–4-GHz Reconfigurable N-Path Notch Filter with >40-dBc Rejection and >15-dBm B1dB
Gucheng Zhou, Ziyuan Chen, Xiong Chen, Pei-Ling Chi, Tao Yang
Gucheng Zhou, University of Electronic Science and Technology of
University of Electronic Science and Technology of, Univ. of Electronic Science and Technology of China, Sichuan Engineering Research Centre for BMCHDI, National Yang Ming Chiao Tung Univ., Univ. of Electronic Science and Technology of China
(14:50 - 15:10)
Hyun-Chul Park
Samsung Electronics
Patrick Reynaert
KU Leuven
Location
257AB
Abstract
This technical session highlights state-of-the-art power amplifier (PA) architectures for D-band and mmWave applications in bulk CMOS and FD-SOI. Key innovations include a D-band variable-gain PA using Guanella transformers for 36% fractional bandwidth (FBW) and 20 Gb/s 16-QAM signaling, alongside ultra-compact 145 GHz PAs featuring adaptive back-gate biasing and diode-based linearization. Ultra-broadband performance is showcased through a 9.5–40 GHz linear PA utilizing compensated coupled-line transformers (126.5% FBW) and a 15.5–46.0 GHz PA with high-efficiency matching networks. Finally, a 40 GHz load-isolated Doherty PA is presented, offering enhanced VSWR resiliency and high efficiency for robust, high-speed wireless communication.
Technical Papers
Abstract
Mo3C-1: A D-Band Variable-Gain Balanced Power Amplifier with 36% FBW, 18.2 dBm PSAT and Reconfigurable Adaptive Bias in 22-nm FD-SOI
Giacomo Venturini, Patrick Reynaert
Giacomo Venturini, KU Leuven
KU Leuven, KU Leuven
(13:30 - 13:50)
Abstract
Mo3C-2: A 0.036 mm2, 145 GHz CMOS Power Amplifier with 7.4% PAE1dB and 4.2 dBm OP1dB for Large Arrays
Kwangwon Park, Mark Rodwell
Kwangwon Park, Univ. of California, Santa Barbara
Univ. of California, Santa Barbara, Univ. of California, Santa Barbara
(13:50 - 14:10)
Abstract
Mo3C-3: A 9.5-to-40 GHz Ultra-Broadband Linear Power Amplifier with Compensated Coupled-Line Transformer in 65-nm Bulk CMOS
Sangjin Yoo, Kyutaek Oh, Geuntae Kim, Ilku Nam, Ockgoo Lee
Sangjin Yoo, Pusan National Univ.
Pusan National Univ., Pusan National Univ., Pusan National Univ., Pusan National Univ., Pusan National Univ.
(14:10 - 14:30)
Abstract
Mo3C-4: A 15.5-46.0 GHz Broadband Power Amplifier with 19.0-22.0 dBm Psat and 30.0% Peak PAEmax in 28-nm Bulk CMOS
Ting Huang, Hongtao Xu, Yun Yin
Ting Huang, Fudan Univ.
Fudan Univ., Fudan Univ., Fudan Univ.
(14:30 - 14:50)
Abstract
Mo3C-5: A 37–43 GHz VSWR-Resilient Load-Isolated Doherty Power Amplifier Achieving 26% Average PAE at 36 Gb/s in 45-nm SOI CMOS
Yahia Ibrahim, Ali Niknejad
Yahia Ibrahim, Univ. of California, Berkeley
Univ. of California, Berkeley, Univ. of California, Berkeley
(14:50 - 15:10)

-

Harald Pretl
Johannes Kepler Univ. Linz
Mustafijur Rahman
Indian Institute of Technology Delhi
Location
252AB
Abstract
This session highlights advances in integrated RF sensing and radars. The first paper presents a 16-VRX radar using analog I/Q correlators with state-of-the-art efficiency. The next paper discusses a 2 to 20 GHz RF signal processor based on a looped phase–time array that enhances frequency resolution. The third paper presents a 405-GHz 2x2 scalable transceiver with increased frequency locking range. The fourth paper presents a radar transceiver featuring a hybrid Doppler-CW/PMCW operation to achieve unambiguous range accuracy of tens of µm. Finally, a W-band PMCW transmitter using an RWTO and edge combiner concludes the session.
Technical Papers
Abstract
Mo4A-1: A 4T4R Code-Domain UWB Radar with Fully Analog Multi-Lag Correlators and Pre-Correlation Averaging
Aswin Undavalli, Ashwanth Senthil Kumar, Tristan Liang, Kareem Rashed, Shantanu Chakrabartty, Arun Natarajan, Aravind Nagulu
Aswin Undavalli, Northeastern University
Northeastern University, Yale Univ., Northeastern University, Oregon State Univ., Washington Univ. in St. Louis, Yale Univ., Northeastern University
(15:40 - 16:00)
Abstract
Mo4A-2: A 2 to 20 GHz Resolution-Enhanced RF Spectrum Sensor Using a Looped Phase-Time Array
Liwen Zhong, Meijun Tian, Wooram Lee
Liwen Zhong, Pennsylvania State Univ.
Pennsylvania State Univ., Pennsylvania State Univ., Pennsylvania State Univ.
(16:00 - 16:20)
Abstract
Mo4A-3: 405-GHz 2×2 Concurrent Transceiver Pixel Array with 7.8-GHz Bandwidth Using Series-Coupled Standing-Wave Oscillators
Seungmo Noh, Goutham Murugesan, Seongjae Mun, Young-Joon Lee, Frank Zhang, Wooyeol Choi, Kenneth O
Seungmo Noh, Seoul National Univ.
Seoul National Univ., Univ. of Texas at Dallas, Seoul National Univ., Seoul National Univ., Univ. of Texas at Dallas, Seoul National Univ., Univ. of Texas at Dallas
(16:20 - 16:40)
Abstract
Mo4A-4: A Doppler-Assisted 76 GHz PMCW Radar with Meter-Scale Unambiguous Range and μm-Scale Range Accuracy
Zhengyang Zhang, Xuyang Liu, Yilun Huang, Hamidreza Aghasi
Zhengyang Zhang, Univ. of California, Irvine
Univ. of California, Irvine, Univ. of California, Irvine, Univ. of California, Irvine, Univ. of California, Irvine
(16:40 - 17:00)
Abstract
Mo4A-5: A W-band RTWO-Based Digital Transmitter for PMCW Radar Achieving 14.9% Efficiency
Shaoqi Yang, Zhongjun Zhang, Weichen Tao, Yuhao Yang, Juncheng Deng, Jing Liu, Fujiang Lin, Robert Staszewski, Liheng Lou, Yizhe Hu
Shaoqi Yang, Univ. of Science and Technology of China
Univ. of Science and Technology of China, Univ. of Science and Technology of China, Univ. of Science and Technology of China, Univ. of Science and Technology of China, Univ. of Science and Technology of China, Hefei SCMI Co., Ltd., Univ. of Science and Technology of China, Univ. College Dublin, Univ. of Science and Technology of China, Univ. of Science and Technology of China
(17:00 - 17:20)
Vojkan Vidojkovic
Eindhoven Univ. of Technology
Marcus Granger-Jones
QORVO, Inc.
Location
254AB
Abstract
The Front-Ends and LNAs are essential building blocks of modern transceivers. The session presents mm-wave novel self-synchronizing receiver array, high-efficiency FR2 transmit front-end, cryo LNA, FR3 LNA and a mm-wave LNA exploiting noise cancelling.
Technical Papers
Abstract
Mo4B-1: A 4-Channel Self-Synchronizing Receiver Array Without LO Distribution with Angle-of-Arrival Estimation
Subhan Zakir, Waleed Ahmad, Alireza Kiyaei, Atif Hussain Shah, Saeed Zeinolabedinzadeh
Subhan Zakir, Arizona State Univ.
Arizona State Univ., Arizona State Univ., Arizona State Univ., Arizona State Univ., Arizona State Univ.
(15:40 - 16:00)
Abstract
Mo4B-2: A 24–29.5-GHz CMOS Front-End Module With 33.6% TX Peak Efficiency and 5.8-mW RX Power Consumption
Dong-Jun Shin, Songcheol Hong
Dong-Jun Shin, Korea Advanced Institute of Science and Technology
Korea Advanced Institute of Science and Technology, Korea Advanced Institute of Science and Technology
(16:00 - 16:20)
Abstract
Mo4B-3: A 5.2∼7.8 GHz Cryo-CMOS LNA with 4-K Noise Temperature with Cascode gm-boosting and Current Reuse for Noise Reduction
Yujie Geng, Hang Fu, Haotian Chen, Cheng Wang
Yujie Geng, Univ. of Electronic Science and Technology of China
Univ. of Electronic Science and Technology of China, Chengdu Data Automation System Technologies, Univ. of Electronic Science and Technology of China, Univ. of Electronic Science and Technology of China
(16:20 - 16:40)
Abstract
Mo4B-4: A 10–19.2 GHz LNA Using a Partially Three-Winding Transformer and Class-AB Operation Achieving −5.3 to −2.4 dBm IP1dB for 6G FR3 Receivers
Min-Seok Baek, Joon-Hyung Kim, Jae-Hyeok Song, Jong-Seong Park, Ilhun Kim, Eun-Gyu Lee, Seong-Mo Moon, Dongpil Chang, Choul-Young Kim
Min-Seok Baek, Chungnam National Univ.
Chungnam National Univ., Chungnam National Univ., Chungnam National Univ., Chungnam National Univ., Chungnam National Univ., Chungnam National University, ETRI, ETRI, Chungnam National Univ.
(16:40 - 17:00)
Abstract
Mo4B-5: A 77.3-GHz 3.36-dB NF LNA With Cross-Coupled Noise Cancellation and Low-Loss Input Matching Transformer in 22-nm CMOS
Juncheng Deng, Aodi Li, Binzhi Liao, Zhongjun Zhang, Shaoqi Yang, Jing Liu, Zhongguang Xu, Robert Staszewski, Liheng Lou, Yizhe Hu
Juncheng Deng, Univ. of Science and Technology of China
Univ. of Science and Technology of China, Univ. of Science and Technology of China, Univ. of Science and Technology of China, Univ. of Science and Technology of China, Univ. of Science and Technology of China, Hefei SCMI Co., Ltd., Hefei SCMI Co., Ltd., Univ. College Dublin, Univ. of Science and Technology of China, Univ. of Science and Technology of China
(17:00 - 17:20)
Mohamed Elkhouly
Broadcom Corp.
Wooram Lee
Pennsylvania State Univ.
Location
257AB
Abstract
This session will present new design techniques for sub-THz power amplifiers to achieve high output power, wide bandwidth, and compact chip area. This session will also present a compact, high-gain sub-THz bidirectional amplifier.
Technical Papers
Abstract
Mo4C-1: A 187–224-GHz 20-dB-Gain 4.5-dBm-Psat Power Amplifier with Dual-Band Matching Networks and Slotline Combining in 40-nm CMOS
Cheng-Xuan Tsai, Chun-Hsing Li
Chun-Hsing Li, National Taiwan Univ.
National Taiwan Univ., National Taiwan Univ.
(15:40 - 16:00)
Abstract
Mo4C-2: A Compact 125–150-GHz Power Amplifier in 90-nm SiGe 9HP+ BiCMOS With 34-dB Gain for Phased-Array Transmitters
Joon-Hyung Kim, Jae-Hyeok Song, Min-Seok Baek, Jong-Seong Park, Gabriel Rebeiz, Choul-Young Kim
Joon-Hyung Kim, Chungnam National Univ.
Chungnam National Univ., Chungnam National Univ., Chungnam National Univ., Chungnam National Univ., Univ. of California, San Diego, Chungnam National Univ.
(16:00 - 16:20)
Abstract
Mo4C-3: A 286-GHz CMOS Amplifier Achieving 56-GHz BW3dB Via fmax-Boosting and Gain-Staggering
Dawei Tang, Yu-Chen Xue, Peigen Zhou, Zhe Chen, Jixin Chen, Hao GAO, Wei Hong
Dawei Tang, Southeast Univ.
Southeast Univ., Southeast Univ., Southeast Univ., Southeast Univ., Southeast Univ., Eindhoven Univ. of Technology, Southeast Univ.
(16:20 - 16:40)
Abstract
Mo4C-4: A D-band Bi-directional Amplifier Utilizing Lossy U-boosting Network
Sunghwan Park, Yudai Yamazaki, Chenxin Liu, Chun Wang, Hiroyuki Sakai, Kazuaki Kunihiro, Kenichi Okada
Sunghwan Park, Institute of Science Tokyo
Institute of Science Tokyo, Institute of Science Tokyo, Institute of Science Tokyo, Institute of Science Tokyo, Institute of Science Tokyo, Tokyo Institute of Technology, Institute of Science Tokyo
(16:40 - 17:00)
Hao Gao
Southeast Univ.
KJ Koh
Boeing
Location
253ABC
Abstract
Low RMS error and broadband phase shifters are essential building blocks for beamforming. This session features four broadband phase shifters spanning 8–110 GHz, 91–125 GHz, 8–28 GHz, and 24–30 GHz, all implemented in silicon (22 nm and 65 nm CMOS/FD‑SOI). Highlights include a 10-bit distributed vector‑summing PS with <0.22 dB RMS gain error and <1.99° RMS phase error, a 91–125 GHz beamforming receive channel with sub‑dB gain and sub‑few‑degree phase error, a wideband all‑passive variable gain phase shifter with calibration‑free gain control, and a compact 7‑bit passive hybrid achieving <1.1°/<0.61 dB RMS errors. Also included is a bi‑directional reflection‑amplifier phase shifter for ultra‑low‑power RIS enabling large‑scale beyond-5G deployments.
Technical Papers
Abstract
Mo4D-1: A Broadband 360° Distributed Vector-Summing Phase Shifter Achieving <1.99°/0.22-dB RMS Gain and Phase Error over 8-to-110-GHz Bandwidth
Lianbo Liu, Yidong Fang, Zhaojing Fu, Hao Guo, Taiyun Chi, Sensen Li
Lianbo Liu, Univ. of Texas at Austin
Univ. of Texas at Austin, Univ. of Texas at Austin, Univ. of Texas at Austin, Rice Univ., Rice Univ., Univ. of Texas at Austin
(15:40 - 16:00)
Abstract
Mo4D-2: A 91–125 GHz 6-Bit RF Beamforming Receive Channel Using a Dual Current-Steering Phase Shifter With a Digitized Transistor Core and Tunable Gate Bias in 22-nm FD-SOI
Haisu Ju, Yingtao Zou, Gabriel Rebeiz
Haisu Ju, Univ. of California, San Diego
Univ. of California, San Diego, Univ. of California, San Diego, Univ. of California, San Diego
(16:00 - 16:20)
Abstract
Mo4D-3: A 28–GHz Bi-Directional Reflection-Amplifier-Based Phase Shifter for Active Reconfigurable Intelligent Surface (RIS)
Patchara Sawakewang, Apisak Worapishet, Tissana Kijsanayotin, Pingda Guan, Chawin Khongprasongsiri, Robert Staszewski, Teerachot Siriburanon
Patchara Sawakewang, Univ. College Dublin
Univ. College Dublin, Mahanakorn University of Technology, QORVO, Inc., Univ. College Dublin, Univ. College Dublin, Univ. College Dublin, Univ. College Dublin
(16:20 - 16:40)
Abstract
Mo4D-4: An 8-28 GHz Bidirectional Variable-Gain Phase Shifter for 6G FR3/ 5G n258 FR2 Featuring a Magnitude-Equalized Self-Similar 90◦ Coupler and a Simultaneously Phase-Temperature Compensated Attenuator
Basem Abdelaziz Abdelmagid, Hua Wang
Basem Abdelaziz Abdelmagid, ETH Zurich
ETH Zurich, ETH Zurich
(16:40 - 17:00)
Abstract
Mo4D-5: A 24-30 GHz 7-bit Passive Hybrid Phase Shifter with <1.1° RMS Phase Error and <0.61 dB Amplitude Error
Ziang Zhang, Qin Chen, Xuhao Jiang, Yuchen Liang, Xuanxuan Yang, Rui Cao, Xiangning Fan, Lianming Li
Ziang Zhang, Southeast Univ.
Southeast Univ., Southeast Univ., Southeast Univ., Southeast Univ., Southeast Univ., Southeast Univ., Southeast Univ., Southeast Univ.
(17:00 - 17:20)

-

Giuseppe Gramegna
IMEC
Vito Giannini
OLIX Computing
Location
252AB
Abstract
The session features both Radars and UWB transceivers from the industry. The FMCW Radars include BIST solutions for 60-GHz MIMO radar SoCs and coded MIMO transceivers designed for 76–81 GHz, and an integrated 77-GHz radar with in-package antenna launchers for automotive applications. The session also covers UWB receivers for IEEE 802.15.4ab, narrowband-assisted architectures resilient to blockers, and innovative techniques for achieving PVT-robust signal strength estimation.
Technical Papers
Abstract
Tu1A-1: A 76-81 GHz FMCW MIMO Coded Transceiver for Automotive Radar
Benny Sheinman, Tom Heller, Jakob Vovnoboy, Dan Corcos, Yanir Schwartz, Michael Grubman, Dror Malowany, Yaal Horesh, Florian Bohn, Nico Bochmann, Mohamed Eissa, Iskender Haydaroglu, Stefan Malz, Chris Menkus, Robert Kim, Abhilash Nagabhushana, Ichiro Aoki, Scott Kee, Jeff Zachan, Oded Katz
Oded Katz, Indie Semiconductor
Indie Semiconductor, Indie Semiconductor, Indie Semiconductor, Indie Semiconductor, Indie Semiconductor, Indie Semiconductor, Indie Semiconductor, Indie Semiconductor, Indie Semiconductor, Indie Semiconductor, Indie Semiconductor, Indie Semiconductor, Indie Semiconductor, Indie Semiconductor, Indie Semiconductor, Indie Semiconductor, Indie Semiconductor, Indie Semiconductor, Indie Semiconductor, Indie Semiconductor
(08:00 - 08:20)
Abstract
Tu1A-2: A Built-in Self-Test System for 60GHz MIMO FMCW Radar SoCs
Wen Zhou, Gennady Feygin, Pranav Dayal, Hou-Shin Chen, Sowmya Srinivasa, Renu Krishna Gutta, Pankaj Solanki, Gregory Rogers, Oren ELIEZER, Mingyuan Li, Sai Krishna Rayudu, Taewoo Yu, Junseuk Suh, Joonhoi Hur
Wen Zhou, Samsung Semiconductor, Inc.
Samsung Semiconductor, Inc., Samsung Semiconductor, Inc., Samsung Semiconductor, Inc., Samsung Semiconductor, Inc., Samsung Electronics, Samsung Semiconductor, Inc., Samsung Electronics, Samsung Semiconductor, Inc., Samsung Electronics America, Inc., Samsung Semiconductor, Inc., Samsung Semiconductor, Inc., Samsung Electronics, Samsung Electronics, Samsung Semiconductor, Inc.
(08:20 - 08:40)
Abstract
Tu1A-3: A 28-nm FD-SOI 77-GHz Automotive FMCW Radar with Antenna Launcher in Package
Faisal Ahmed, Muhammad Furqan, Farshad Piri, Chandrajit Debnath, Ibrahim Petricli, Mahmoud M. Pirbazari, Federico Vecchi, Andrea Manzoni, Amedeo Salomon
Faisal Ahmed, STMicroelectronics
STMicroelectronics, STMicroelectronics, STMicroelectronics, STMicroelectronics, STMicroelectronics, STMicroelectronics, STMicroelectronics, STMicroelectronics, STMicroelectronics
(08:40 - 09:00)
Abstract
Tu1A-4: An Area-Efficient NBA-MMS UWB Receiver with Capacitance Boosting and PVT-Robust RSSI for IEEE 802.15.4ab
Sumin Kang, Junhyeong Kim, Sinyoung Kim, Wonjun Jung, Jonghoon Myeong, Duyong Seo, Hyun-Gi Seok, Hyun-Chul PARK, Chanhong Park, Joonsuk Kim
Sumin Kang, Samsung Electronics
Samsung Electronics, Samsung Electronics, Samsung Electronics, Samsung Electronics, Samsung Electronics, Samsung Electronics, Samsung Electronics, Samsung Semiconductor, Inc., Samsung Electronics, Samsung Electronics
(09:00 - 09:20)
Abstract
Tu1A-5: An 802.15.4ab Narrowband Assistance RX Resilient to −32dBm Blocker at 3.2dB NF with High Dynamic Range TIA and Clip Detector
Anoop Narayan Bhat, Aasish Boora, Kaijie Ding, Johan van den Heuvel, Murat Eskiyerli, Erwin Allebes, Peng Zhang, Mario Konijnenburg, Yao-Hong Liu, Peter Vis, Christian Bachmann
Anoop Narayan Bhat, imec-Netherlands, Eindhoven
imec-Netherlands, Eindhoven, IMEC, IMEC, IMEC, IMEC, IMEC, IMEC, IMEC, IMEC, IMEC, IMEC
(09:20 - 09:40)
Minoru Fujishima
Hiroshima Univ.
Wei Deng
Tsinghua Univ.
Location
254AB
Abstract
This session presents advanced frequency multiplication techniques for signal generation from 100 to 310 GHz in CMOS and SiGe technologies. The papers demonstrate phase-aligned harmonic recombination, coupled-line-based output matching, amplifier–multiplier chains, and coherent power combining to enhance efficiency, output power, bandwidth, and harmonic suppression. Reported results include up to 16 dBm output power, +26.5 dBm EIRP, and >70 dBc harmonic rejection. Together, these works illustrate scalable circuit strategies for high-purity, high-power D-band and sub-terahertz transmitters suitable for emerging communication and sensing applications.
Technical Papers
Abstract
Tu1B-1: A Calibration-Free 55-to-70 dBc H1 Rejection, 13.8 % Efficiency, 102-to-120 GHz CMOS Frequency Tripler using Phase-Alignment Technique for Harmonic Recombination
Sarah Koop-Brinkmann, Victor Lasserre, Vadim Issakov
Sarah Koop-Brinkmann, Technische Univ. Braunschweig
Technische Univ. Braunschweig, Technische Univ. Braunschweig, Technische Univ. Braunschweig
(08:00 - 08:20)
Abstract
Tu1B-2: A 110–142-GHz Frequency Quadrupler With 13.1-dBm Psat Achieved by Coupled-Line-Based Output Matching Technique in 130-nm SiGe
Zuojun Wang, Haorui Luo, Qin Dong, Zhou Shu, Jixin Chen, Kevin Tshun Chuan Chai, Yongxin Guo
Zuojun Wang, City Univ. of Hong Kong
City Univ. of Hong Kong, National Univ. of Singapore, National Univ. of Singapore, Xidian Univ., Southeast Univ., Agency for Science, Technology and Research (A*STAR), City Univ. of Hong Kong
(08:20 - 08:40)
Abstract
Tu1B-3: A 108–170-GHz ×6 Amplifier-Multiplier Chain with 16-dBm Output Power and >29.5-dBc Harmonics Rejection in 130-nm SiGe Process
Chang Shu, Lingzheng Kong, Peigen Zhou, Dawei Tang, Zekun Li, Liqun Lu, Jixin Chen, Wei Hong
Chang Shu, Southeast Univ.
Southeast Univ., Southeast Univ., Southeast Univ., Southeast Univ., Southeast Univ., Southeast Univ., Southeast Univ., Southeast Univ.
(08:40 - 09:00)
Abstract
Tu1B-4: A Broadband 241-306 GHz Frequency Multiply-By-24 Based Coherent Radiator Delivering +26.5 dBm EIRP in 90-nm SiGe BiCMOS
Jaskirat Singh Virdi, Wei Sun, Aydin Babakhani
Jaskirat Singh Virdi, Univ. of California, Los Angeles
Univ. of California, Los Angeles, Univ. of California, Los Angeles, Univ. of California, Los Angeles
(09:00 - 09:20)
Emanuel Cohen
Technion - Israel Institute of Technology
Khaled Khalaf
Pharrics
Location
257AB
Abstract
Integrated transmit/receive front-ends are rapidly expanding in capability across radar imaging, 5G/6G MIMO, SATCOM phased arrays, and wideband beamforming. This session highlights mmWave and wideband Tx/Rx architectures that advance calibration accuracy, scalable spatial combining, and packaging-aware integration. Featured designs include a W-band FMCW radar transceiver using a self-calibrated Type-III ADPLL for 1.27-cm range-resolution imaging, a compact 28-GHz fully-connected Gm-cell-grid MIMO receiver network, a K-band multi-beam phased-array transmitter enabled by silicon-assisted beam combining in a 5-layer PCB, a 2–18-GHz 4-channel CMOS T/R beamformer and, a 256-element 28-GHz wirelessly-powered active relay transceiver with TDD-sync-free bidirectional amplifiers for robust high-capacity links.
Technical Papers
Abstract
Tu1C-1: A 2–18 GHz Integrated 4-Channel Transmit/Receive Beamformer in 65-nm CMOS
Jianhao Gong, Yudi Yang, Kun Gao, Zixuan Wang, Xingcun Li, Zan Zhou, Jiewen Wang, Huibo Wu, Wenhua Chen
Yudi Yang, Tsinghua Univ.
Tsinghua Univ., Tsinghua Univ., Tsinghua Univ., Tsinghua Univ., Tsinghua Univ., Tsinghua Univ., Tsinghua Univ., Tsinghua Univ., Tsinghua Univ.
(08:00 - 08:20)
Abstract
Tu1C-2: A K-Band 4-Beam Phased Array Transmitter in Only 5-Layer PCB Enabled by Silicon-Assisted Beam-Combining Network for SATCOM
Ruiyang Jiang, Haikun Jia, Huanyu Ge, Jiankai Zhao, Wei Deng, Baoyong Chi
Ruiyang Jiang, Tsinghua Univ.
Tsinghua Univ., Tsinghua Univ., BNRist, Tsinghua University, Tsinghua Univ., Tsinghua Univ., BNRist, Tsinghua University
(08:20 - 08:40)
Abstract
Tu1C-3: Scalable and Compact Fully-Connected Network based on Gm-Cell Grid for 28-GHz Multi-stream MIMO Receiver
Seunghoon Lee, Sungmin Cho, Seung-Uk Choi, Sungbeom Kim, Inho Choi, Jiwon Kang, Youngseo Du, Ho-Jin Song
Seunghoon Lee, Pohang Univ. of Science and Technology
Pohang Univ. of Science and Technology, Pohang Univ. of Science and Technology, Pohang Univ. of Science and Technology, Samsung Electronics, Pohang Univ. of Science and Technology, Pohang Univ. of Science and Technology, Pohang Univ. of Science and Technology, Pohang Univ. of Science and Technology
(08:40 - 09:00)
Abstract
Tu1C-4: A 256-Element 28GHz 5G NR Wirelessly-Powered Active Relay Transceiver with TDD Synchronization Free Bidirectional Amplifiers
Shu Date, Atsuya Hirayama, Sena Kato, Keito Yuasa, Michihiro Ide, Masayuki Kikuchi, Takashi Tomura, Jill Mayeda, Atsushi Shirane
Shu Date, Tokyo Institute of Technology
Tokyo Institute of Technology, Institute of Science Tokyo, Institute of Science Tokyo, Institute of Science Tokyo, Tokyo Institute of Technology, Tokyo Institute of Technology, Institute of Science Tokyo, Institute of Science Tokyo, Institute of Science Tokyo
(09:00 - 09:20)
Abstract
Tu1C-5: A W-Band FMCW Radar Transceiver with Self-Calibrated Type-III ADPLL Achieving 1.27-cm Range Resolution for Imaging Applications
Ling Hao, Haoyu Bai, Zhenkun Shen, Ningyuan Zhang, Jiazheng Zhou, Chuancheng Wu, Zihe Wang, Junhua Liu, Huailin Liao
Ling Hao, Peking Univ.
Peking Univ., Peking Univ., Peking Univ., Peking Univ., Peking Univ., Peking Univ., Peking Univ., Peking Univ., Peking Univ.
(09:20 - 09:40)
Sajjad Moazeni
Univ. of Washington
Subhanshu Gupta
Washington State Univ.
Location
255
Abstract
Next-generation optical interconnects must achieve 200G/400G data rates per lane to support future intra-datacenter requirements. This session showcases high-performance optical transmitter and receiver building blocks engineered to meet these scaling demands. Presentations will cover a diverse range of cutting-edge material platforms and processes, including SiGe, CMOS, Thin-Film Lithium Niobate (TFLN), and InP, highlighting their roles in achieving the necessary power efficiency and signal integrity for the next era of data centers.
Technical Papers
Abstract
Tu1J-1: A 460 Gb/s PAM-4 Linear Distributed Driver with 105 GHz BW for TFLN Modulators in 130nm SiGe BiCMOS
Leandro da Silva, Cedric Bruynsteen, Jakob Declercq, Armands Ostrovskis, Fabio Pittala, Guy Torfs, Nishant Singh, Xin Yin
Leandro da Silva, Ghent Univ.
Ghent Univ., IMEC, IMEC, Keysight Technologies, Keysight Technologies, Ghent Univ., IMEC, IMEC
(08:00 - 08:20)
Abstract
Tu1J-2: A 200-Gb/s Low-Noise TIA in 28-nm CMOS
Feiyang Zhang, Jianyu Yang, Yifei Xia, Zhixing Zhang, Ruixuan Yang, Liang Zhao, Wenxin Zhang, Cailing Li, Zetong Zhang, Shenlei Bao, Binhao Wang, Li Geng, Dan Li
Dan Li, Xi'an Jiaotong Univ.
Xi'an Jiaotong Univ., Xi'an Jiaotong Univ., Xi'an Jiaotong Univ., Xi'an Jiaotong Univ., Xi'an Jiaotong Univ., Xi'an Jiaotong Univ., Xi'an Jiaotong Univ., Xi'an Jiaotong Univ., Xi'an Jiaotong Univ., Univ. of Chinese Academy of Sciences, Univ. of Chinese Academy of Sciences, Xi'an Jiaotong Univ., Xi'an Jiaotong Univ.
(08:20 - 08:40)
Abstract
Tu1J-3: A 4×212 Gbps 3.34pJ/bit Electronic-Photonic Co-Designed Transmitter Chipset in 0.18-um SiGe BiCMOS and 90nm Silicon Photonics
Ziyue Dang, Ziyu Deng, Ye Liu, Qiansheng Wang, Zhicheng Wang, Ziying Xie, Min Tan, Xi Xiao
Ziyue Dang, Huazhong Univ. of Science & Technology
Huazhong Univ. of Science & Technology, National Optoelectronics Innovation Center, National Optoelectronics Innovation Center, National Optoelectronics Innovation Center, National Optoelectronics Innovation Center, Huazhong Univ. of Science & Technology, Huazhong Univ. of Science & Technology, National Optoelectronics Innovation Center
(08:40 - 09:00)
Abstract
Tu1J-4: A 55-GHz Bandwidth PAM-4 InP DHBT Photoreceiver Based on PD–TIA Co-Design for >112-GBd Optical Transceivers
Antoine Chauvet, Romain Hersent, Fabrice Blache, Filipe Jorge, Marie Da-Rocha Amaro, Karim Mekhazni, Harry Gariah, Nil Davy, Colin Mismer, Virginie Nodjiadjim, Michel Goix, Agnieszka konczykowska, Bertrand Ardouin, Christophe Caillaud, Abed-Elhak Kasbari, Achour Ouslimani
Antoine Chauvet, Nokia-Bell Labs
Nokia-Bell Labs, Nokia-Bell Labs, Nokia-Bell Labs, Nokia-Bell Labs, Nokia-Bell Labs, Nokia-Bell Labs, Nokia-Bell Labs, Nokia-Bell Labs, Nokia-Bell Labs, Nokia-Bell Labs, Nokia-Bell Labs, Nokia-Bell Labs, Nokia-Bell Labs, Nokia-Bell Labs, LEA Laboratory, LEA Laboratory
(09:00 - 09:20)

-

Bichoy Bahr
Texas Instruments
Justin Wu
AmLogic
Location
252AB
Abstract
This session showcases recent innovations in RF front-end design from across the industry that enable the performance, bandwidth, and integration demands of emerging wireless standards. The talks highlight breakthroughs in low-noise amplification, switching, and frequency generation across CMOS, SiGe, and SOI technologies. Topics include N‑path receiver architectures optimized for WiFi 7 multi‑link operation, high‑gain D‑band LNAs, power‑efficient millimeter‑wave LNAs for 5G applications, broadband frequency doublers in advanced SiGe processes, and fully differential DC‑capable RF switching solutions. Together, these contributions showcase state‑of‑the‑art techniques that push the limits of noise performance, linearity, bandwidth, and integration in modern RF systems.
Technical Papers
Abstract
Tu2A-1: A 5-7GHz Channel and Bandwidth Selective Shunt N-Path LNA Based Receiver with +6dBm OOC IB1dB, <-71dBm LO Re-Radiation for WiFi 7 Multi-Link Operation
Ran Krichman, Ashoke RAVI, Natan Ershengoren, Rotem Banin, Sashank Krishnamurthy, Uri Grosglik, Oded Tal, Nave Sharvit, Oren Avraham, Sarit Zur, Ofir Degani
Ofir Degani, Intel Corp.
Intel Corp., Intel Corp., Intel Corp., Intel Corp., Intel Corp., Intel Corp., Intel Corp., Intel Corp., Intel Corp., Intel Corp., Intel Corp.
(10:10 - 10:30)
Abstract
Tu2A-2: A Single-Stage Feedback-Feedforward D-band LNA in SiGe BiCMOS
Guglielmo De Filippi, Lorenzo Piotto, Andrea MAZZANTI
Guglielmo De Filippi, Fondazione Chips-IT
Fondazione Chips-IT, Fondazione Chips-IT, Univ. of Pavia
(10:30 - 10:50)
Abstract
Tu2A-3: A Broadband G-Band Frequency Doubler in 130-nm SiGe Technology
Mingquan Bao, Yu Yan, Klaus Aufinger, Herbert Zirath
Mingquan Bao, Ericsson
Ericsson, Chalmers Univ. of Technology, Infineon Technologies AG, Chalmers Univ. of Technology
(10:50 - 11:10)
Abstract
Tu2A-4: A Fully Differential DC-Capable RF SPDT Switch in SOI
Ilker Kalyoncu, Huseyin Kayahan
Ilker Kalyoncu, Analog Devices
Analog Devices, Analog Devices
(11:10 - 11:30)
Ahmed Elkholy
Broadcom Corp.
Wanghua Wu
Samsung Semiconductor, Inc.
Location
254AB
Abstract
This session explores cutting-edge clock generation architectures achieving sub-30fs jitter and superior spur suppression.The first paper introduces an 8–28-GHz DLL with nested feedback to overcome inverter delay limits. The second paper demonstrates a 6.2-GHz sampling PLL with 18.2-fsrms jitter using bottom-plate sampling. The third paper describes a fractional-N digital PLL reaching 25.4-fs jitter via a series-resonance DCO and power-gated oscillator. The fourth paper presents a ring-oscillator clock multiplier using a reference quadrupler for enhanced noise suppression. Finally, the last paper details a 5-GHz ring-oscillator PLL employing over-sampling feedforward cancellation for a record –267.05-dB FoM.
Technical Papers
Abstract
Tu2B-1: An 8–28-GHz 16-Phase Delay Locked Loop Employing Nested Feedback Loops in 28-nm CMOS
Junyan Bi, Yechen Tian, Junjie Gu, Kaixuan Cen, Xiaoliang Shen, Hao Xu, Na Yan
Junyan Bi, Fudan Univ.
Fudan Univ., Fudan Univ., Fudan Univ., Fudan Univ., National Integrated Circuit Innovation Center, Fudan Univ., Fudan Univ.
(10:10 - 10:30)
Abstract
Tu2B-2: A 6.2-GHz Reference-Feedthrough-Suppressed Type-I Sampling PLL with a Bottom-Plate-Sampling PD Scoring 18.2 fsrms Jitter, −258.7-dB FoM and −80.6-dBc Reference Spur
Ningyi Zhang, Jinhai Xiao, Xiaolong Liu, Rui Liu, Junao Zhu, YuanHao Zhou, Futian Liang, Xinzhe Wang, Wenyi Peng, Yintang Yang, Xiaohua Ma, Yue Hao, Maliang Liu, Yong Chen
Ningyi Zhang, Xidian Univ.
Xidian Univ., Xidian Univ., Southern Univ. of Science and Technology, Xidian Univ., Xidian Univ., Xidian Univ., Univ. of Science and Technology of China, Univ. of Science and Technology of China, Univ. of Science and Technology of China, Xidian Univ., Xidian Univ., Xidian Univ., Xidian Univ., Tsinghua Univ.
(10:30 - 10:50)
Abstract
Tu2B-3: A 25.4fs Jitter Fractional-N Digital PLL with an LC-Based Power-Gated Oscillator and Series-Resonance DCO
Daniele Lodi Rizzini, Michele Rossoni, Filippo Osio, Stefano Gallucci, Riccardo Moleri, Andrea MAZZANTI, Andrea Lacaita, Simone Dartizio, Salvatore Levantino
Daniele Lodi Rizzini, Politecnico di Milano
Politecnico di Milano, Politecnico di Milano, Politecnico di Milano, Politecnico di Milano, Politecnico di Milano, Univ. Of Pavia, Politecnico di Milano, Politecnico di Milano, Politecnico di Milano
(10:50 - 11:10)
Abstract
Tu2B-4: A 2.4-GHz 168-fsrms-Jitter and –56-dBc-Reference-Spur RO-Based Cascaded Injection-Locked Clock Multiplier
Qixuan Luo, Hongyu Mao, Xiaolong Liu
Qixuan Luo, Southern Univ. of Science and Technology
Southern Univ. of Science and Technology, Southern Univ. of Science and Technology, Southern Univ. of Science and Technology
(11:10 - 11:30)
Abstract
Tu2B-5: An Ultra Low Noise 5-GHz Ring Oscillator-Based PLL with Over-Sampling Feedforward Phase Noise Cancellation Achieving -267.05 dB FoMN
Yi-Hsiang Huang, Po-Hao Cheng, Jacques Rudell
Yi-Hsiang Huang, Univ. of Washington
Univ. of Washington, Univ. of Washington, Univ. of Washington
(11:30 - 11:50)
Vadim Issakov
Brandenburg Univ. of Technology
Kenichi Okada
Institute of Science Tokyo
Location
257AB
Abstract
This session showcases enabling circuit blocks for next-generation sub-THz transceivers. The talks span key front-end functions such as attenuation, low-noise amplification, frequency generation, and phase shifter, targeting wideband operation and robust performance across process, voltage, and temperature.
Technical Papers
Abstract
Tu2C-1: A 110-170 GHz Phase-Insensitive and PVT-Robust Digital-Step Attenuator with Phase Compensation and Background Step Calibration
Basem Abdelaziz Abdelmagid, Adam Wang, Hua Wang
Basem Abdelaziz Abdelmagid, ETH Zurich
ETH Zurich, ETH Zurich, ETH Zurich
(10:10 - 10:30)
Abstract
Tu2C-2: A 121/145 GHz Dual-Band LNA with Single-Path and Dual-Mode Gain-Boosting Core in 28 nm CMOS
Hokeun Lee, Hyo-Ryeong Jeon, Namun Hwang, Sang-Gug Lee, Kyung-Sik Choi
Hokeun Lee, Korea Advanced Institute of Science and Technology
Korea Advanced Institute of Science and Technology, Korea Advanced Institute of Science and Technology, Korea Advanced Institute of Science and Technology, Korea Advanced Institute of Science and Technology, Yonsei Univ.
(10:30 - 10:50)
Abstract
Tu2C-3: A 224-GHz 5.9-dBm-Pout VCO Utilizing Deep-Triode-Induced Current Top-Clipping Technique
Miao Yu, Jin Zhang, Kaixue Ma, Zhen Yang
Miao Yu, Tianjin Univ.
Tianjin Univ., Tianjin Univ., Tianjin Univ., Tianjin Univ.
(10:50 - 11:10)
Abstract
Tu2C-4: A 111.5GHz-to-163.6GHz 37.9%-Tuning-Range -200.3dBc/Hz-FoMT VCO Employing Hybrid Coarse-Magnetic-Tuning and Fine-Capacitive-Tuning Techniques
Hanlin Yang, Bodong Zhang, Yi Liu, Zixi Jing, Zhiyu Liu, Howard Luong
Hanlin Yang, Hong Kong Univ. of Science and Technology
Hong Kong Univ. of Science and Technology, Hong Kong Univ. of Science and Technology, Hong Kong Univ. of Science and Technology, Hong Kong Univ. of Science and Technology, Hong Kong Univ. of Science and Technology, Hong Kong Univ. of Science and Technology
(11:10 - 11:30)
Abstract
Tu2C-5: A 220 to 260 GHz Ultra-Compact, Calibration-Free 5-bit Phase Shifter with 1.8 Degrees RMS Phase Error in 9HP SiGe Process
Meijun Tian, Liwen Zhong, Wooram Lee
Meijun Tian, Pennsylvania State Univ.
Pennsylvania State Univ., Pennsylvania State Univ., Pennsylvania State Univ.
(11:30 - 11:50)
Zeshan Ahmad
Coherent Corp
Bahar Farahani
Cisco Systems, Inc.
Location
255
Abstract
Emerging AI workloads demand an exponential increase in XPU and switch scale-up interconnect bandwidth, alongside high-density die-to-die interfaces. This session explores novel Co-Packaged Optics (CPO) link architectures designed to meet these challenges. Presentations will highlight the use of Micro-Ring Modulators (MRM) and the enhancement of bandwidth through ultra-low-power coherent optics. Key technical deep-dives include UCIe-inspired clock-forwarding and the development of compact, power-efficient building blocks, featuring innovative Phase Interpolator (PI) designs.
Technical Papers
Abstract
Tu2J-1: A 1.49 pJ/b 4-Channel 256-Gb/s MRM-Based Coherent Co-Packaged Optics with Linear Carrier Phase Recovery
Pengyu Zeng, Marziyeh Rezaei, Daniel Sturm, Asha Nayak, Hongyong Li, Sajjad Moazeni
Pengyu Zeng, Univ. of Washington
Univ. of Washington, Univ. of Washington, Univ. of Washington, Univ. of Washington, Univ. of Washington, Univ. of Washington
(10:10 - 10:30)
Abstract
Tu2J-2: A 200Gbps 0.67pJ/bit Transceiver Front-end for silicon-photonic with group delay and nonlinear adjustment in 28nm CMOS
Yihao Yang, Shenlei Bao, Chao Cheng, Binhao Wang
Yihao Yang, State Key Laboratory of Ultrafast Optical Science and Technology, Xi’an Institute of Optics and Prec
State Key Laboratory of Ultrafast Optical Science and Technology, Xi’an Institute of Optics and Prec, State Key Laboratory of Ultrafast Optical Science and Technology, Xi’an Institute of Optics and Prec, State Key Laboratory of Ultrafast Optical Science and Technology, Xi’an Institute of Optics and Prec, State Key Laboratory of Ultrafast Optical Science and Technology, Xi’an Institute of Optics and Prec
(10:30 - 10:50)
Abstract
Tu2J-3: An 8×64 Gb/s PAM-4 Retimed Optical Receiver with Forwarded Clock for UCIe Compliant Optical I/O in 28-nm CMOS
Yukun He, Junhao Zhao, Zhouchi Duan, Puxi Tan, Yucong Li, Yujie Zeng, Zhihao Peng, Huanfa Sun, Shangjie Wei, Chenming Zhang, Dong Wang, Shiming Wu, Jian Luan, Hao Luo, Xiaoyan Gui
Yukun He, Xi'an Jiaotong Univ.
Xi'an Jiaotong Univ., Xi'an Jiaotong Univ., Xi’an Jiaotong University, Xi’an Jiaotong University, Xi’an Jiaotong University, Xi’an Jiaotong University, Xi’an Jiaotong University, Xi’an Jiaotong University, Xi’an Jiaotong University, Sanechips Technology Co., Ltd., Shenzhen, China, Sanechips Technology Co., Ltd., Shenzhen, China, Sanechips Technology Co., Ltd., Shenzhen, China, Sanechips Technology Co., Ltd., Shenzhen, China, Sanechips Technology Co., Ltd., Shenzhen, China, Xi'an Jiaotong Univ.
(10:50 - 11:10)
Abstract
Tu2J-4: A 3.5-to-14GHz, Less-Than-0.81LSB-INLpp, 7b Adaptive Phase Interpolator with Segment-Squeeze INL Calibration Algorithm for Die-to-Die Interfaces
Shiju Li, Yihan Chen, Wei Deng, Nan QI, Haikun Jia, Liyuan Liu, Baoyong Chi
Shiju Li, Tsinghua Univ.
Tsinghua Univ., Institute of Semiconductors, CAS, Tsinghua Univ., Chinese Academy of Sciences, Tsinghua Univ., Institute of Semiconductors, CAS, Tsinghua Univ.
(11:10 - 11:30)

-

Oleh Krutko
IMEC
Harshpreet Bakshi
Texas Instruments, Inc.
Location
252AB
Abstract
GaN technologies continue to attract strong interest for applications demanding high power density. This session highlights recent advances in GaN device technologies spanning recess-free, near enhancement-mode high-performance InAlGaN/GaN HEMTs; a scalable GaN-on-Si process with high power density and linearity for FR3; heterogeneous integration of GaN power amplifiers using diamond interposers; and nonlinear electro‑thermal models enabling accurate MMIC HPA prediction up to V-band.
Technical Papers
Abstract
Tu3A-1: High-Performance Near-Enhancement-Mode InAlGaN/GaN HEMTs on Silicon with High fT/fMAX of 71.5/173.1 GHz for Millimeter-Wave Applications
Hsuan-Yao Huang, Po-Wei Chen, You-Chen Weng, You-Ting Lin, Fitriyadi Fitriyadi, Jeng-Chyang Sun, Chen Zhang, Edward Yi Chang
Hsuan-Yao Huang, National Yang Ming Chiao Tung Univ.
National Yang Ming Chiao Tung Univ., National Yang Ming Chiao Tung Univ., National Yang Ming Chiao Tung Univ., National Yang Ming Chiao Tung Univ., National Yang Ming Chiao Tung Univ., Infinity Communication Technology Inc., Taiwan, Infinity Communication Technology Inc., Taiwan, National Yang Ming Chiao Tung Univ.
(13:30 - 13:50)
Abstract
Tu3A-2: GH10-10 Nonlinear Thermal Model Capability & 3W SatCom HPA
Samira Bouzid-Driad, Frederic DRILLET, Christophe Chang, Manfred Madel, Kimon Vivien, Laurent Brunel, Romain Pecheux, Herve Blanck, Valeria Di Giacomo-Brunel
Samira Bouzid-Driad, United Monolithic Semiconductors
United Monolithic Semiconductors, United Monolithic Semiconductors, United Monolithic Semiconductors, United Monolithic Semiconductors, UMS (United Monolithic Semiconductors), United Monolithic Semiconductors, United Monolithic Semiconductors, United Monolithic Semiconductors, United Monolithic Semiconductors
(13:50 - 14:10)
Abstract
Tu3A-3: Fully Al-based 0.25 µm 20 V GaN-on-Si Process with 3 W/mm for FR3
Hsien Shun Wu, Yuan Gao, Qingyun Xie, Yi Heng Leong, Wee Leng Ong, Lakshmi Kanta Bera, Navab Singh, Geok Ing Ng
Hsien Shun Wu, Agency for Science, Technology and Research (A*STA
Agency for Science, Technology and Research (A*STA, Agency for Science, Technology and Research (A*STAR), Agency for Science, Technology and Research (A*STAR), Agency for Science, Technology and Research (A*STAR), Agency for Science, Technology and Research (A*STAR), Agency for Science, Technology and Research (A*STAR), Agency for Science, Technology and Research (A*STAR), Nanyang Technological Univ.
(14:10 - 14:30)
Abstract
Tu3A-4: A 4 W Heterogeneous Power Amplifier with GaN-on-Si Dielets in Single-Crystal Diamond Interposer for 6G FR3 Applications
Pradyot Yadav, Xingchen Li, Danish Baig, Ruonan Han, Muhannad Bakir, Madhavan Swaminathan, Tomás Palacios
Pradyot Yadav, Massachusetts Institute of Technology
Massachusetts Institute of Technology, Georgia Institute of Technology, Georgia Institute of Technology, Massachusetts Institute of Technology, Georgia Institute of Technology, Pennsylvania State Univ., Massachusetts Institute of Technology
(14:30 - 14:50)
Andrea Bevilacqua
Univ. of Padova
Kimia Ansari
Danger Devices
Location
254AB
Abstract
The papers in the seesion present advanced CMOS VCO architectures achieving wide tuning ranges and state-of-the-art phase noise. Innovations include multi-tap inductors for flicker suppression, harmonic-phase tuning via transformer-based impedance control, balanced inverse-class-F operation, multiphase class-B coupling, and dual-mode series-resonance techniques, delivering high FoM across GHz frequencies with competitive power efficiency.
Technical Papers
Abstract
Tu3B-1: A Transformer-Based Inverse-Class-F-Like VCO With a Digitally Controlled Common-Mode Impedance Tuner
Hyunjoon Kim, Donghyeon Seong, Seungwoo Shim, Sanggeun Jeon
Hyunjoon Kim, Korea Univ.
Korea Univ., Korea Univ., Korea Univ., Korea Univ.
(13:30 - 13:50)
Abstract
Tu3B-2: A 5.56–9.09 GHz Octa-Core Dual-Mode DCO Based on Multi-Tap Three-Turn Inductor Achieving 195.7 dBc/Hz FoM and Wideband Flicker PN Suppression
Jiexi Weng, Liangqi Dong, Yuhao Yang, Guanjun Liu, Liheng Lou, Robert Staszewski, Yizhe Hu
Jiexi Weng, Univ. of Science and Technology of China
Univ. of Science and Technology of China, Univ. of Science and Technology of China, Univ. of Science and Technology of China, Univ. of Science and Technology of China, Univ. of Science and Technology of China, Univ. College Dublin, Univ. of Science and Technology of China
(13:50 - 14:10)
Abstract
Tu3B-3: A 7.0-to-8.6 GHz Balanced Class-F-1 VCO with a Trifilar Transformer-Based Tank Achieving 194.5 dBc/Hz FoM
Yunbo Huang, Zunsong Yang, Kai Cheng, Hongyu Ren, Xiaoyu Shan, Li Wang, Yong Chen, Bo Li
Yunbo Huang, Institute of Microelectronics, CAS
Institute of Microelectronics, CAS, Institute of microelectronics, CAS, Institute of microelectronics, CAS, Institute of microelectronics, CAS, Institute of microelectronics, CAS, Institute of microelectronics, CAS, Tsinghua Univ., Institute of Microelectronics,CAS
(14:10 - 14:30)
Abstract
Tu3B-4: Harmonically-Coupled, Current‑Sharing 4-Phase and 6-Phase Oscillators in 65 nm CMOS
Bahram Jafari Akinabad, Samad Sheikhaei, Sankaran Aniruddhan, Shahriar Mirabbasi, Sudip Shekhar
Bahram Jafari Akinabad, Univ. of British Columbia
Univ. of British Columbia, Univ. of Tehran, Indian Institute of Technology Madras, Univ. of British Columbia, Univ. of British Columbia
(14:30 - 14:50)
Abstract
Tu3B-5: A 10.66-to-15.03 GHz Dual-Core Dual-Mode Series Resonance VCO Achieving 209 dBc/Hz FoMTA
Yichen Liu, Zhenbo Rao, Yan Wang
Yichen Liu, Tsinghua Univ.
Tsinghua Univ., Tsinghua Univ., Tsinghua Univ.
(14:50 - 15:10)
Alexandre Giry
CEA-LETI
Gernot Hueber
United Micro Technology
Location
257AB
Abstract
This session explores advanced integration technologies for power amplifiers (PAs) and low-noise amplifiers (LNAs), pushing the boundaries of performance and size across a wide range of frequencies. The session begins with a 3D-RDL integration approach for a LDMOS Doherty PA module operating in the 3.4–3.8 GHz band, demonstrating innovative packaging solutions for enhanced compactness. Next, the first GaN-on-Silicon (GaN/Si) Doherty PA operating above 7 GHz is presented, showcasing the potential of GaN/Si technology for 5G FR3 applications. The session then transitions to mmWave applications, featuring a 60 GHz LNA and PA designed and fabricated in an advanced gate-all-around (GAA) CMOS process, demonstrating the capabilities of advanced CMOS logic technologies for mmWave. Finally, the session ends with a 300 GHz PA design in a 130 nm SiGe technology, pushing the envelope of SiGe-based solutions for sub-THz applications.
Technical Papers
Abstract
Tu3C-1: 3D-RDL and Bondwire Technology Comparison for Implementation of a 10W Broadband Three-way LDMOS Doherty Power Amplifier
Mohadig Rousstia, Ayad Ghannam, Mariano Ercoli, Radjindrepersad Gajadharsing
Mohadig Rousstia, Ampleon
Ampleon, 3DiS Technologies, Ampleon, Ampleon
(13:30 - 13:50)
Abstract
Tu3C-2: A 10-W 7-GHz GaN-on-Si Doherty Power Amplifier with Hybrid MMIC-Module Integration for 6G FR3 Base-Station Applications
Kyung Pil Jung, Seunghoon Jee, Seung Hun Kim, Sungjae Oh, Jungsik Kim, Dongki Kim, Seong-Kyun Kim
Kyung Pil Jung, Samsung Research, Korea
Samsung Research, Korea, Samsung Research, Korea, Samsung Research, Korea, Samsung Research, Korea, Samsung Research, Korea, Samsung Research, Korea, Samsung Research, Korea
(13:50 - 14:10)
Abstract
Tu3C-3: A 60GHz LNA and PA Achieving 5dB NF and 35.6% Peak PAE in a Gate-All-Around (GAA) CMOS Process with Backside Power Delivery
Steven CALLENDER, Ibukun Momson, Awani Khodkumbhe, Ali Niknejad, Said Rami, Stefano Pellerano
Steven CALLENDER, Intel Corp.
Intel Corp., Intel Corp., Univ. of California, Berkeley, Univ. of California, Berkeley, Intel Corp., Intel Corp.
(14:10 - 14:30)
Abstract
Tu3C-4: A Wideband and Linear 300 GHz Power Amplifier in 130 nm SiGe BiCMOS Technology
Enrico Jimenez Tuero, Seyyid Dilek, Andrea Malignaggi, Corrado Carta
Enrico Jimenez Tuero, IHP Microelectronics
IHP Microelectronics, IHP Microelectronics, IHP Microelectronics, IHP GmbH
(14:30 - 14:50)

-

Hamidreza Aghasi
Univ. of California, Irvine
Chen Jiang
Fudan Univ.
Location
252AB
Abstract
This session presents low-power RF designs targeting sensing and communication applications. The first paper introduces a mixer-first pulsed-LO beam-steering receiver enabling PLL-free operation with scalable power-performance trade-offs. The second paper presents a multi-source RF energy-harvesting IC with event-driven 3-D maximum power point tracking and SIMO regulation. The third paper reports a wideband active true-time-delay circuit achieving fine delay control for efficient self-interference cancellation in full-duplex systems. The final paper demonstrates a miniature LEO satellite localization tag using algorithm–hardware co-design to reduce required EIRP by 10 dB while achieving a highly compact integrated transmitter.
Technical Papers
Abstract
Tu4A-1: A 533µW Fast Duty-Cycled Pulsed-LO Beam-Steering Receiver
Yasir Al-Theyabi, David Wentzloff
Yasir Al-Theyabi, Univ. of Michigan
Univ. of Michigan, Univ. of Michigan
(15:40 - 16:00)
Abstract
Tu4A-2: MSCR: Multi-Source-Collaborative Reconfigurable RF Energy Harvester With 3-D MPPT Achieving -32 dBm Sensitivity and 8x Boost in Available Output Power
Yunzhi Ma, Yiming Liu, Haoyu Chen, yongling zhang, Lei Qiu, Miao Meng
Yunzhi Ma, Tongji Univ.
Tongji Univ., Tongji Univ., Tongji Univ., Tongji Univ., Tongji Univ., Tongji Univ.
(16:00 - 16:20)
Abstract
Tu4A-3: High Resolution Active True Time Delay with Quasi-Quadrature Generator with 31.7 dB/ 500 MHz Self-Interference Cancellation for Full-Duplex Communication
Eunji Jeong, Eunchae Jo, Honghyun Jeon, Haram Park, Hyeonwon Song, Taehyeon Kim, Subin Lim, Oh Seunguk, Taehwan Jang, Seongmo Moon, Seunghyun Jang, Seungchan Lee, Songcheol Hong, Jinseok Park
Honghyun Jeon, Chonnam National Univ.
Chonnam National Univ., Chonnam National Univ., Chonnam National Univ., Chonnam National Univ., Chonnam National Univ., Chonnam National Univ., Chonnam National Univ., Hanyang Univ., Hanyang University ERICA, ETRI, ETRI, Chonnam National Univ., Korea Advanced Institute of Science and Technology, Ulsan National Institute of Science and Technology (UNIST)
(16:20 - 16:40)
Abstract
Tu4A-4: A 1 × 2 cm Localization Tag with a 2.92 GHz Transmitter Chipset for LEO Satellite Localization Using Hardware and Algorithm Co-design
Yunfan Wang, Rahul Narasimha, Steve Young, Yi Shen, Zhen Feng, Demba Komma, Seokhyeon Jeong, Qirui Zhang, Andrea Bejarano-Carbo, Jiajun Tang, Chien-Wei Tseng, Guanchen Tao, Yufan Yue, Taekwang Jang, Hun-Seok Kim, David Blaauw
Yunfan Wang, University of Michigan, Ann Arbor
University of Michigan, Ann Arbor, Univ. of Michigan, Univ. of Michigan, Univ. of Michigan, Univ. of Michigan, Univ. of Michigan, Univ. of Michigan, Univ. of Michigan, Univ. of Michigan, Princeton Univ., NVIDIA Corp., Univ. of Michigan, Univ. of Michigan, ETH Zurich, Univ. of Michigan, Univ. of Michigan
(16:40 - 17:00)
Marco Vigilante
Qualcomm Technologies, Inc.
Sensen Li
Univ. of Texas at Austin
Location
254AB
Abstract
This session highlights recent advances in mm Wave front end building blocks spanning LNAs, PAs, robust T/R interfaces, and broadband LO generator. Building on the growing demands of broadband links and emerging applications such as satellite communications, the papers in this session emphasize robustness and reconfigurability alongside state-of-the-art performance. Topics include a blocker tolerant K-band LNA with strong Ka band TX rejection and a 12–28 GHz LNA used to demonstrate an automated schematic–layout co-optimization platform that tightens the loop between design specs and physical implementation. On the transmit side, a comparison of two SiGe complementary mm Wave PAs, as well as a frequency reconfigurable dual band T/R front end designed to maintain operation under severe load mismatch will be presented. A LO generator with oscillator-embedded artificial line is demonstrated for wideband next-generation radio.
Technical Papers
Abstract
Tu4B-1: Design and Comparison of Two SiGe Complementary Millimeter-Wave Power Amplifiers
Wei Ma, Weiqing Wang, Fangkai Wang, Hanzhong Xu, Xudong Wang
Wei Ma, Nankai Univ.
Nankai Univ., Nankai Univ., Nankai Univ., Nankai Univ., Nankai Univ.
(15:40 - 16:00)
Abstract
Tu4B-2: A Millimeter-Wave Frequency Reconfigurable Dual-Band T/R Front-End for 2.5:1 VSWR-Resilient in TX Operations
Zi Kang Hu, Yan Chen Lin, Wen Rao, Li Gao, Xiu Yin Zhang
Zi Kang Hu, South China Univ. of Technology
South China Univ. of Technology, South China Univ. of Technology, South China Univ. of Technology, South China Univ. of Technology, South China Univ. of Technology
(16:00 - 16:20)
Abstract
Tu4B-3: A 47-to-100GHz Oscillator-embedded Artificial Transmission Line based LO Generator Achieving Averaged FoMt of -193.7 dBc/Hz
Wei Sun, Benyamini FALLAHI Motlagh, Boxun Yan, Aydin Babakhani
Wei Sun, Univ. of California, Los Angeles
Univ. of California, Los Angeles, UCLA, Univ. of California, Los Angeles, UCLA
(16:20 - 16:40)
Abstract
Tu4B-4: A Blocker-Tolerant K-Band LNA with 52-dB Ka-Band TX Rejection for Satellite Communications
Heyi Sun, Chenxi Zhao, Yiming Yu, Huihua Liu, Yunqiu Wu, Kai Kang
Heyi Sun, Univ. of Electronic Science and Technology of China
Univ. of Electronic Science and Technology of China, Univ. of Electronic Science and Technology of China, Univ. of Electronic Science and Technology of China, Univ. of Electronic Science and Technology of China, Univ. of Electronic Science and Technology of China, Univ. of Electronic Science and Technology of China
(16:40 - 17:00)
Abstract
Tu4B-5: A General-Purpose Schematic-Layout Co-Optimization Platform for RFIC Design Demonstrated with a 1.7-dB-NF 12-28GHz LNA
Yuwen Tao, Xiangyu Meng, Pengfei Bai, Junbin Ouyang, Baoyong Chi
Yuwen Tao, Sun Yat-sen Univ.
Sun Yat-sen Univ., Sun Yat-sen Univ., Sun Yat-sen Univ., Sun Yat-sen Univ., Tsinghua Univ.
(17:00 - 17:20)
Matilda Livadaru
Raytheon Company
Florian Voineau
STMicroelectronics
Location
257AB
Abstract
This session presents recent advancements in device and circuits for system integration. Notable component advances include: a low loss X-Band Switched-Capacitor Delay Element and signal repeater implemented in 45nm SOI CMOS technology; a dual-mode circular cavity filter; a high-performance RF-SOI switch fabricated on 130nm 200mm technology platform that incorporates a 65nm device; and a multi-channel transceiver featuring Built-in-Self test functionality enabled by integrated directional couplers. These papers represent significant progress in the field, driving enhanced system integration with optimized performance.
Technical Papers
Abstract
Tu4C-1: Accurate, High Coverage On-Chip Built-in Self-Test Adopting Precision-Enhanced Power Detection and Multipath Loopback for mmWave Radar IC Measurements
Doyoon Kim, Kyunghwan Kim, Geonho Park, Goeun Baek, Byeong-Taek Moon, Hyun-Chul Park, Chan-Hong Park
Doyoon Kim, Samsung Electronics, S.LSI
Samsung Electronics, S.LSI, Samsung Electronics, S.LSI, Samsung Electronics, S.LSI, Samsung Electronics, S.LSI, Samsung Electronics, Samsung Semiconductor, Inc., Samsung Electronics, S.LSI
(15:40 - 16:00)
Abstract
Tu4C-2: Dual-Mode Circular Cavity Filters via Azimuthal Wave Propagation
Mustafa Bakr, Smain Amari, Uwe Rosenberg, Ian Hunter
Mustafa Bakr, Univ. of Oxford
Univ. of Oxford, Royal Military College Of Canada, Mician Global Engineering GbR, Bremen, University of Leeds
(16:00 - 16:20)
Abstract
Tu4C-3: Sub-60 fs RFSOI Switch Performances in Advanced 200 mm 130/65 nm Hybrid Technology
Robin Bousmaha--Jouve, Julien Dura, Julien Amouroux, Pascal Masson, Remy Vauche, Frederic GIANESELLO, Wenceslas Rahajandraibe, Julien Babic, Romain Laire, Fayrouz Haddad, Pascal Fornara, Franck Julien, Clement Charbuillet, Alain Fleury
Robin Bousmaha--Jouve, STMicroelectronics
STMicroelectronics, STMicroelectronics, STMicroelectronics, Université de Nice Sophia Antipolis, Aix-Marseille Univ., STMicroelectronics, Aix-Marseille Univ., STMicroelectronics, STMicroelectronics, Aix-Marseille Univ., STMicroelectronics, STMicroelectronics, STMicroelectronics, STMicroelectronics
(16:20 - 16:40)
Abstract
Tu4C-4: A 9-11 GHz Multistage Switched-Capacitor Delay Element and Signal Repeater Achieving 4.6-71.4 ns Delay and 40 dB Gain
Travis Forbes, Benjamin Magstadt, Robert Costanzo, Jesse Moody
Travis Forbes, Sandia National Laboratories
Sandia National Laboratories, Sandia National Laboratories, Sandia National Laboratories, Univ. of Maryland
(16:40 - 17:00)
Pierluigi Nuzzo
Univ. of California, Berkeley
Yao-Hong Liu
IMEC
Location
255
Abstract
This session explores the latest advances in transceivers for the Internet of Things, focusing on ultra-low power consumption and architectural innovation. The session begins with a 2.4-GHz, low-latency wake-up receiver featuring a high-efficiency, VCO-based digital demodulator. The discussion then moves to extreme energy constraints, introducing a battery-less, crystal-less, event-driven UWB tag architecture that consumes less than 100 nW. A spectral- and energy-efficient tag for BPSK WiFi backscatter systems is then presented, integrating a novel sidelobe-rejection technique. The session concludes with a compact, highly efficient, BLE-compliant wireless transmitter optimized for the next generation of low-power wearable applications.
Technical Papers
Abstract
Tu4J-1: A 2.4 GHz 369-μW Low-Latency WuRX with Voltage-to-Frequency Digital Demodulation and Bit-Error Correction
Hui Zhang, Dong Liang, Linhao Ma, Zongle Ma, Qing Li, Keping Wang
Keping Wang, Tianjin Univ.
Tianjin Univ., Tianjin Univ., Tianjin Univ., Tianjin Univ., Tianjin Univ., Tianjin Univ.
(15:40 - 16:00)
Abstract
Tu4J-2: A Battery-Less Crystal-Less Event-Driven UWB Tag With Hybrid Power Management Network and PI-CDR-Based Wake-Up Receiver
Bowen Wang, Rong Zhou, Jianhang Yang, Xianlong Xiong, Minsong Zhang, Nannan Shi, Xin An, Zhangming Zhu
Bowen Wang, Xidian Univ.
Xidian Univ., Xidian Univ., Xidian Univ., Xidian Univ., Xidian Univ., Xidian Univ., Xidian Univ., Xidian Univ.
(16:00 - 16:20)
Abstract
Tu4J-3: An 802.11b-WiFi Backscatter Modulator Featuring 30 dB PSLR with All-Digital Gaussian Pulse Shaping
yongling zhang, Miao Meng
yongling zhang, Tongji Univ.
Tongji Univ., Tongji Univ.
(16:20 - 16:40)
Abstract
Tu4J-4: A Fully Integrated 2.4GHz BLE Transmitter with ADPLL and Class-G Switched-Capacitor PA Achieving 30% System Efficiency
Chen-Hsing Hsu, Yi-Chen Hsiao, Yu-Che Yang, Sheng-Chiang Tu, Yi-Chang Shih, Ka-Un Chan, Yu-Te Liao
Yi-Chen Hsiao, National Yang Ming Chiao Tung Univ.
National Yang Ming Chiao Tung Univ., National Yang Ming Chiao Tung Univ., Realtek Semiconductor Corp., Realtek Semiconductor Corp., Realtek Semiconductor Corp., jackyc@realtek.com, National Yang Ming Chiao Tung Univ.
(16:40 - 17:00)