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Mo1A: Industry Innovations in Transceivers and Beamformers for Communication and Radar
Location
252AB
Abstract
This session presents recent advances in highly integrated RF transceiver and beamforming architectures that enable next‑generation wireless infrastructure and high‑resolution sensing. The talks span a wide range of mmWave applications, including a 57–67 GHz four‑channel transmitter with fine‑resolution phase shifting and built‑in self‑test for Doppler‑offset FMCW radar, a high‑linearity K‑band multi‑beam transmitter IC targeting LEO SATCOM, and a high‑power SiGe TXSIP delivering more than 32 dBm across the 71–86 GHz E‑band for point‑to‑point backhaul. Complementing these mmWave front‑ends, the session also features a single‑chip ORAN‑compliant 4TX‑4RX 5G radio‑unit transceiver that bridges Ethernet to RF for compact, power‑efficient base‑station deployments.
Technical Papers
Abstract
Mo1A-1: Ethernet to RF: Single Chip ORAN 4TX/4RX 5G Radio Unit Base Station Transceiver
(08:00 - 08:20)
Abstract
Mo1A-2: A 57-67 GHz +14 dBm 4-Channel Transmitter With 7-Bit Phase Shifter and Built-In Self-Test for Doppler-Offset Doppler Division Multiplexing FMCW Radar
(08:20 - 08:40)
Abstract
Mo1A-3: A K-Band Fully-Connected 4-Channel Beamforming Transmitter IC for LEO SATCOM in 65nm CMOS
(08:40 - 09:00)
Abstract
Mo1A-4: A SiGe TXSIP for E-Band Point-to-Point Systems from 71 to 86 GHz with >32 dBm Output Power
(09:00 - 09:20)
Mo1B: Advanced LC-VCO Topologies for Ku- and Ka-Band
Location
254AB
Abstract
This session features four papers on high-performance Ku- and Ka-band CMOS oscillators utilizing innovative architectures—including triple-tank resonators for flicker-noise suppression, area-efficient Gm boosted cores, series-resonance tank with 3rd harmonic extraction, and quad-mode inductive switching. These designs achieve high figures-of-merit and ultra-wide tuning ranges across a frequency span of 9.9 to 30 GHz, addressing key challenges in next-generation frequency synthesis.
Technical Papers
Abstract
Mo1B-1: A 12-16.3-GHz 197.7-dBc/Hz-FOMT Harmonic-Shaping VCO Using Enhanced Common-Mode Resonance Expansion Based on a Triple-Tank Coupled Resonator
(08:00 - 08:20)
Abstract
Mo1B-2: A 15–18.3 GHz Upper Ku-Band LC-VCO Achieving 201 dBc/Hz FoMA in 65-nm CMOS
(08:20 - 08:40)
Abstract
Mo1B-3: Cross-Coupled CMOS Series-Resonance VCO with 3rd-Harmonic Output and -142 dBc/Hz Phase Noise at 10 MHz Offset from 29.7 GHz
(08:40 - 09:00)
Abstract
Mo1B-4: A Fundamental 9.9-to-30GHz 207dBc/Hz FoMT Quad-Core Quad-Mode VCO Utilizing One-Coil-For-All Mechanism in 40nm CMOS
(09:00 - 09:20)
Mo1C: Digital PAs and Transmitters
Location
257AB
Abstract
This session highlights circuit techniques that advance fully digital PAs and transmitters toward higher output power, broader bandwidth, and cleaner spectra. It begins with a reconfigurable multi-standard IoT digital transmitter using IQ-shared PA. Next, a 28.5 dBm all-digital Wi-Fi 7 polar transmitter employing triple-stacked class-G Doherty PA is demonstrated. The third paper presents a Wi-Fi Doherty polar transmitter that suppresses out-of-channel noise using a mixed-domain FIR technique. The session concludes with a wideband RF power DAC achieving −47.2dB EVM.
Technical Papers
Abstract
Mo1C-1: A 2.4-GHz Reconfigurable Digital Transmitter with Three-Vector-Synthesized IQ-Shared PA and Envelope Rotation Calibration for Multi-Standard IoT Applications
(08:00 - 08:20)
Abstract
Mo1C-2: A 28.5dBm 3.3V/1.1V All-Digital Wi-Fi 7 Polar Transmitter employing Triple-Stacked Doherty Class-G SC-DPA in 14 nm Fin-FET
(08:20 - 08:40)
Abstract
Mo1C-3: +28.5dBm 5-7GHz FIR and Doherty Polar DTX Achieving -155dBc/Hz OOC Noise for WiFi MLO Applications
(08:40 - 09:00)
Abstract
Mo1C-4: A 12 bit, 1.3 GHz to 4.7 GHz Switched Current Source RF Power-DAC achieving -47.2 dB EVM for 4096-QAM
(09:00 - 09:20)
Mo1D: Components for Wireline Communications and Quantum Computing
Location
253ABC
Abstract
The future of computing requires innovations in connectivity and architectures that can solve complex problems. This session presents novel components that enable the next wave of high-speed connectivity solutions to meet today’s significant compute demand. Innovative wide-band circuit components driven by new technologies such as phase-change materials and high-speed NPN-PNP bipolar transistor architecture will be presented. In addition, the session showcases a high-speed galvanically isolated data link. Finally, a cryogenic controller for color centers in diamond will be introduced to enable scalable quantum computing and networking.
Technical Papers
Abstract
Mo1D-1: Low Cost Wideband Continuous-Time Linear Equalizers (CTLE) based on SiGe BiCMOS Phase Change Material (PCM) Switches
(08:00 - 08:20)
Abstract
Mo1D-2: A 1.28 pJ/b 32 Gb/s Digital Isolator Using Coupled-Line Transformer for High-Speed Data Links
(08:20 - 08:40)
Abstract
Mo1D-3: A pnp-npn Folded Cascode 240-GS/s 2-to-1 Analog Multiplexer in Complementary 130-nm SiGe BiCMOS
(08:40 - 09:00)
Abstract
Mo1D-4: A Cryo-CMOS Electron/Nuclear Spin Controller with Combined GHz/MHz Drivers for Color-Center Qubits
(09:00 - 09:20)
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Mo2A: Millimeter-wave and Sub-THz Transmitters and Receivers
Location
252AB
Abstract
This session highlights state-of-the-art mmWave and sub‑THz transmitters and receivers, spanning a heterogeneously integrated InP–FinFET CMOS sliding‑IF transmitter, a packaged InP HBT transceiver module, emerging direct digital demodulation architectures, advanced glass/antenna-in-package integration, a D‑band receiver with injection‑locking–based quadrature correction, and a 28‑nm CMOS transceiver enabling dielectric waveguide (DWG) communication.
Technical Papers
Abstract
Mo2A-1: INFINITY: A 245-310 GHz InP-FinFET CMOS Co-packaged Sliding-IF Transmitter with On-Chip Resonant Cavity Antenna
(10:10 - 10:30)
Abstract
Mo2A-2: A Novel 128 GHz 8-PSK Receiver Using an On-Chip Multi-Probed Interferometer for Direct Phase-to-Bits Demodulation
(10:30 - 10:50)
Abstract
Mo2A-3: Antenna-Integrated, Chip-Embedded Glass Packaging of 200-GHz Transceiver Modules
(10:50 - 11:10)
Abstract
Mo2A-4: A 240Gb/s 0.51pJ/b D-Band Direct-Conversion Receiver with Injection-Locking Based Quadrature Correction in 28nm CMOS
(11:10 - 11:30)
Abstract
Mo2A-5: A 138-GHz Dielectric Waveguide Link with 4.87 pJ/bit Efficiency in 28-nm CMOS
(11:30 - 11:50)
Mo2B: High-Frequency LO Generators and VCOs
Location
254AB
Abstract
This session presents advanced CMOS frequency-generation circuits, including a D-band self calibrated quadrature generator, two E-band low-phase-noise LO with quadrature calibration and with harmonic extraction, and a series resonance 40 GHz VCO.
Technical Papers
Abstract
Mo2B-2: An 85.5-to-94.5-GHz W-Band Fully-Symmetric Quadrature LO Generator with a Fast Quadrature Calibration Technique, Achieving Closely Matched 61-fs RMS Jitter and 41-dB IRR
(10:30 - 10:50)
Abstract
Mo2B-3: A 69.2-85.6-GHz LO Generator Achieving 192.2-dBc/Hz FoM and 201.4-dBc/Hz FoMA with Current-Reused Coupled Frequency Tripler and Implicit Ninth Harmonic Extraction in 65nm CMOS
(10:50 - 11:10)
Abstract
Mo2B-4: A 40-GHz Series-Resonance VCO with Windmill-Coupled F-Type Inductive Network Achieving –132.36 dBc/Hz PN at a 10-MHz Offset
(11:10 - 11:30)
Mo2C: LEO SATCOM and FR3 Transmitter Front-Ends and Power Amplifiers
Location
257AB
Abstract
This session highlights recent advances in LEO SATCOM and FR3 transmitter front-ends and power amplifiers, covering devices, circuits, packaging, and design automation. The first paper demonstrates a high-power, high-efficiency complementary BiCMOS PA using both high-speed NPN and PNP devices. The second introduces a Ka-band 4-element beamforming transmitter front-end for LEO ground terminals with a negative-feedback-based interstage matching network. The third presents a compact, watt-level, thermally robust BiCMOS flip-chip PA module for SATCOM transmit front-ends. The final paper showcases a fast specs-to-silicon mmWave RFIC design framework using AI-assisted specs-to-layout with layout-to-silicon constraint integration.
Technical Papers
Abstract
Mo2C-1: A High Performance Complementary SiGe HBT Power Amplifier With A Three Conductor Coupled Line Four-Way Wilkinson Combiner Balun for Emerging K-band LEO SATCOM Transmit Front-End IC
(10:10 - 10:30)
Abstract
Mo2C-2: A Ka-Band CMOS 4-Element Beamforming Transmitter for LEO SATCOM using PA with Negative-Feedback-Based Interstage Matching Network and Asymmetric Wilkinson Power Divider
(10:30 - 10:50)
Abstract
Mo2C-3: A Watt-level, Thermally Reliable Ku-band SiGe HBT Cascode Flip-Chip Power Amplifier Module Using an Optimal IC-to-Package ElectroThermal Codesign for LEO SATCOM Transmit Front-End
(10:50 - 11:10)
Abstract
Mo2C-4: Top-Metal-Only RFIC Retargeting for Fast Specs-to-Silicon Iteration Enabled by AI-Assisted Inverse Design
(11:10 - 11:30)
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Mo3A: Broadband Design Techniques for RF Amplifiers and Switches
Location
252AB
Abstract
The broadband circuit performance is critical for high-data-rate communications and to cover different frequency bands. In this session, various design techniques on broadband RF amplifiers and switches are introduced. For RF amplifiers, in addition to distributed topologies, a reconfigurable architecture is adopted. As for RF switches, a distributed structure as well as power combining is illustrated. These papers demonstrate the state-of-the-art performance under broadband operations.
Technical Papers
Abstract
Mo3A-1: A 2-to-18 GHz Reconfigurable LNA Using Direction Switchable Coupling Presenting 0.78-to-1.24 dB NF in 0.15-μm GaAs pHEMT
(13:30 - 13:50)
Abstract
Mo3A-3: A Broadband Distributed Low-Noise Amplifier with Full-Band Noise Optimization and Built-In Balun
(14:10 - 14:30)
Abstract
Mo3A-4: A Broadband Distributed Amplifier Extending the Operation Frequency to 0.944fT
(14:30 - 14:50)
Abstract
Mo3A-5: A DC-to-170GHz Broadband Distributed SPDT-Switch and Power-Combiner Combo with Source Switch Control
(14:50 - 15:10)
Mo3B: Advanced Frequency Conversion & Filtering Techniques
Location
254AB
Abstract
This session presents cutting-edge advancements in frequency conversion and filtering for wireless receivers, spanning FR3 to W-band frequencies. Featured papers introduce novel circuit architectures, including passive mixer-first diplexers, subharmonic mixers, and switched-Gm topologies, all optimized for high linearity and low noise. These works collectively push the performance boundaries of integrated front-ends for next-generation communication systems.
Technical Papers
Abstract
Mo3B-1: A W-Band Low-Noise Switched-Gm Down-Conversion Mixer with Gm-Boosting Feedback and Trifilar Transformer in 65-nm CMOS
(13:30 - 13:50)
Abstract
Mo3B-2: A Broadband Fully-Distributed Mixer-First Receiver Achieving 40-128 GHz RF Bandwidth
(13:50 - 14:10)
Abstract
Mo3B-3: An FR3 Simultaneous Dual-Carrier Passive Mixer-First Diplexer Receiver Front-End Achieving 6.4 dB NF and -3.2 dBm B1dB
(14:10 - 14:30)
Abstract
Mo3B-4: A 6GHz 3X Subharmonic Mixer with 12.4-dB Conversion Gain and
73-dB Fundamental Rejection
(14:30 - 14:50)
Abstract
Mo3B-5: A 1.5–4-GHz Reconfigurable N-Path Notch Filter with >40-dBc Rejection and >15-dBm B1dB
(14:50 - 15:10)
Mo3C: Wideband and High-Efficiency PAs for D-Band and mmWave
Location
257AB
Abstract
This technical session highlights state-of-the-art power amplifier (PA) architectures for D-band and mmWave applications in bulk CMOS and FD-SOI. Key innovations include a D-band variable-gain PA using Guanella transformers for 36% fractional bandwidth (FBW) and 20 Gb/s 16-QAM signaling, alongside ultra-compact 145 GHz PAs featuring adaptive back-gate biasing and diode-based linearization. Ultra-broadband performance is showcased through a 9.5–40 GHz linear PA utilizing compensated coupled-line transformers (126.5% FBW) and a 15.5–46.0 GHz PA with high-efficiency matching networks. Finally, a 40 GHz load-isolated Doherty PA is presented, offering enhanced VSWR resiliency and high efficiency for robust, high-speed wireless communication.
Technical Papers
Abstract
Mo3C-1: A D-Band Variable-Gain Balanced Power Amplifier with 36% FBW, 18.2 dBm PSAT and Reconfigurable Adaptive Bias in 22-nm FD-SOI
(13:30 - 13:50)
Abstract
Mo3C-2: A 0.036 mm2, 145 GHz CMOS Power Amplifier with 7.4% PAE1dB and 4.2 dBm OP1dB for Large Arrays
(13:50 - 14:10)
Abstract
Mo3C-3: A 9.5-to-40 GHz Ultra-Broadband Linear Power Amplifier with Compensated Coupled-Line Transformer in 65-nm Bulk CMOS
(14:10 - 14:30)
Abstract
Mo3C-4: A 15.5-46.0 GHz Broadband Power Amplifier with 19.0-22.0 dBm Psat and 30.0% Peak PAEmax in 28-nm Bulk CMOS
(14:30 - 14:50)
Abstract
Mo3C-5: A 37–43 GHz VSWR-Resilient Load-Isolated Doherty Power Amplifier
Achieving 26% Average PAE at 36 Gb/s in 45-nm SOI CMOS
(14:50 - 15:10)
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Mo4A: Integrated Radar and Spectrum‑Sensing Arrays
Location
252AB
Abstract
This session highlights advances in integrated RF sensing and radars. The first paper presents a 16-VRX radar using analog I/Q correlators with state-of-the-art efficiency. The next paper discusses a 2 to 20 GHz RF signal processor based on a looped phase–time array that enhances frequency resolution. The third paper presents a 405-GHz 2x2 scalable transceiver with increased frequency locking range. The fourth paper presents a radar transceiver featuring a hybrid Doppler-CW/PMCW operation to achieve unambiguous range accuracy of tens of µm. Finally, a W-band PMCW transmitter using an RWTO and edge combiner concludes the session.
Technical Papers
Abstract
Mo4A-1: A 4T4R Code-Domain UWB Radar with Fully Analog Multi-Lag Correlators and Pre-Correlation Averaging
(15:40 - 16:00)
Abstract
Mo4A-2: A 2 to 20 GHz Resolution-Enhanced RF Spectrum Sensor Using a Looped Phase-Time Array
(16:00 - 16:20)
Abstract
Mo4A-3: 405-GHz 2×2 Concurrent Transceiver Pixel Array with 7.8-GHz Bandwidth Using Series-Coupled Standing-Wave Oscillators
(16:20 - 16:40)
Abstract
Mo4A-4: A Doppler-Assisted 76 GHz PMCW Radar with Meter-Scale
Unambiguous Range and μm-Scale Range Accuracy
(16:40 - 17:00)
Abstract
Mo4A-5: A W-band RTWO-Based Digital Transmitter for PMCW Radar Achieving 14.9% Efficiency
(17:00 - 17:20)
Mo4B: Front-Ends and LNAs
Location
254AB
Abstract
The Front-Ends and LNAs are essential building blocks of modern transceivers. The session presents mm-wave novel self-synchronizing receiver array, high-efficiency FR2 transmit front-end, cryo LNA, FR3 LNA and a mm-wave LNA exploiting noise cancelling.
Technical Papers
Abstract
Mo4B-1: A 4-Channel Self-Synchronizing Receiver Array Without LO Distribution with Angle-of-Arrival Estimation
(15:40 - 16:00)
Abstract
Mo4B-2: A 24–29.5-GHz CMOS Front-End Module With 33.6% TX Peak Efficiency and 5.8-mW RX Power Consumption
(16:00 - 16:20)
Abstract
Mo4B-3: A 5.2∼7.8 GHz Cryo-CMOS LNA with 4-K Noise Temperature with Cascode gm-boosting and Current Reuse for Noise Reduction
(16:20 - 16:40)
Abstract
Mo4B-4: A 10–19.2 GHz LNA Using a Partially Three-Winding Transformer and Class-AB Operation Achieving −5.3 to −2.4 dBm IP1dB for 6G FR3 Receivers
(16:40 - 17:00)
Abstract
Mo4B-5: A 77.3-GHz 3.36-dB NF LNA With Cross-Coupled Noise Cancellation and Low-Loss Input Matching Transformer in 22-nm CMOS
(17:00 - 17:20)
Mo4C: Sub-THz power amplifiers and bidirectional amplifiers
Location
257AB
Abstract
This session will present new design techniques for sub-THz power amplifiers to achieve high output power, wide bandwidth, and compact chip area. This session will also present a compact, high-gain sub-THz bidirectional amplifier.
Technical Papers
Abstract
Mo4C-1: A 187–224-GHz 20-dB-Gain 4.5-dBm-Psat Power Amplifier with Dual-Band Matching Networks and Slotline Combining in 40-nm CMOS
(15:40 - 16:00)
Abstract
Mo4C-2: A Compact 125–150-GHz Power Amplifier in 90-nm SiGe 9HP+ BiCMOS With 34-dB Gain for Phased-Array Transmitters
(16:00 - 16:20)
Abstract
Mo4C-3: A 286-GHz CMOS Amplifier Achieving 56-GHz BW3dB Via fmax-Boosting and Gain-Staggering
(16:20 - 16:40)
Abstract
Mo4C-4: A D-band Bi-directional Amplifier Utilizing Lossy U-boosting Network
(16:40 - 17:00)
Mo4D: Broadband and Bi-directional Phase Shifters for RF and mm-Wave Arrays
Location
253ABC
Abstract
Low RMS error and broadband phase shifters are essential building blocks for beamforming. This session features four broadband phase shifters spanning 8–110 GHz, 91–125 GHz, 8–28 GHz, and 24–30 GHz, all implemented in silicon (22 nm and 65 nm CMOS/FD‑SOI). Highlights include a 10-bit distributed vector‑summing PS with <0.22 dB RMS gain error and <1.99° RMS phase error, a 91–125 GHz beamforming receive channel with sub‑dB gain and sub‑few‑degree phase error, a wideband all‑passive variable gain phase shifter with calibration‑free gain control, and a compact 7‑bit passive hybrid achieving <1.1°/<0.61 dB RMS errors. Also included is a bi‑directional reflection‑amplifier phase shifter for ultra‑low‑power RIS enabling large‑scale beyond-5G deployments.
Technical Papers
Abstract
Mo4D-1: A Broadband 360° Distributed Vector-Summing Phase Shifter Achieving <1.99°/0.22-dB RMS Gain and Phase Error over 8-to-110-GHz Bandwidth
(15:40 - 16:00)
Abstract
Mo4D-2: A 91–125 GHz 6-Bit RF Beamforming Receive Channel Using a Dual Current-Steering Phase Shifter With a Digitized Transistor Core and Tunable Gate Bias in 22-nm FD-SOI
(16:00 - 16:20)
Abstract
Mo4D-3: A 28–GHz Bi-Directional Reflection-Amplifier-Based Phase Shifter for Active Reconfigurable Intelligent Surface (RIS)
(16:20 - 16:40)
Abstract
Mo4D-4: An 8-28 GHz Bidirectional Variable-Gain Phase Shifter for 6G FR3/ 5G
n258 FR2 Featuring a Magnitude-Equalized Self-Similar 90◦ Coupler
and a Simultaneously Phase-Temperature Compensated Attenuator
(16:40 - 17:00)
Abstract
Mo4D-5: A 24-30 GHz 7-bit Passive Hybrid Phase Shifter with <1.1° RMS Phase Error and <0.61 dB Amplitude Error
(17:00 - 17:20)
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Tu1A: mmWave FMCW Radars and UWB Transceivers
Location
252AB
Abstract
The session features both Radars and UWB transceivers from the industry. The FMCW Radars include BIST solutions for 60-GHz MIMO radar SoCs and coded MIMO transceivers designed for 76–81 GHz, and an integrated 77-GHz radar with in-package antenna launchers for automotive applications. The session also covers UWB receivers for IEEE 802.15.4ab, narrowband-assisted architectures resilient to blockers, and innovative techniques for achieving PVT-robust signal strength estimation.
Technical Papers
Abstract
Tu1A-3: A 28-nm FD-SOI 77-GHz Automotive FMCW Radar with Antenna Launcher in Package
(08:40 - 09:00)
Abstract
Tu1A-4: An Area-Efficient NBA-MMS UWB Receiver with Capacitance Boosting and PVT-Robust RSSI for IEEE 802.15.4ab
(09:00 - 09:20)
Abstract
Tu1A-5: An 802.15.4ab Narrowband Assistance RX Resilient to −32dBm Blocker at 3.2dB NF with High Dynamic Range TIA and Clip Detector
(09:20 - 09:40)
Tu1B: Frequency Multipliers from D-Band to Sub-THz
Location
254AB
Abstract
This session presents advanced frequency multiplication techniques for signal generation from 100 to 310 GHz in CMOS and SiGe technologies. The papers demonstrate phase-aligned harmonic recombination, coupled-line-based output matching, amplifier–multiplier chains, and coherent power combining to enhance efficiency, output power, bandwidth, and harmonic suppression. Reported results include up to 16 dBm output power, +26.5 dBm EIRP, and >70 dBc harmonic rejection. Together, these works illustrate scalable circuit strategies for high-purity, high-power D-band and sub-terahertz transmitters suitable for emerging communication and sensing applications.
Technical Papers
Abstract
Tu1B-1: A Calibration-Free 55-to-70 dBc H1 Rejection, 13.8 % Efficiency, 102-to-120 GHz CMOS Frequency Tripler using Phase-Alignment Technique for Harmonic Recombination
(08:00 - 08:20)
Abstract
Tu1B-2: A 110–142-GHz Frequency Quadrupler With 13.1-dBm Psat Achieved by Coupled-Line-Based Output Matching Technique in 130-nm SiGe
(08:20 - 08:40)
Abstract
Tu1B-3: A 108–170-GHz ×6 Amplifier-Multiplier Chain with 16-dBm Output Power and >29.5-dBc Harmonics Rejection in 130-nm SiGe Process
(08:40 - 09:00)
Abstract
Tu1B-4: A Broadband 241-306 GHz Frequency Multiply-By-24 Based Coherent Radiator Delivering +26.5 dBm EIRP in 90-nm SiGe BiCMOS
(09:00 - 09:20)
Tu1C: Scalable, Calibrated mmWave and Wideband Tx/Rx Front-Ends for Radar, 5G, and SATCOM
Location
257AB
Abstract
Integrated transmit/receive front-ends are rapidly expanding in capability across radar imaging, 5G/6G MIMO, SATCOM phased arrays, and wideband beamforming. This session highlights mmWave and wideband Tx/Rx architectures that advance calibration accuracy, scalable spatial combining, and packaging-aware integration. Featured designs include a W-band FMCW radar transceiver using a self-calibrated Type-III ADPLL for 1.27-cm range-resolution imaging, a compact 28-GHz fully-connected Gm-cell-grid MIMO receiver network, a K-band multi-beam phased-array transmitter enabled by silicon-assisted beam combining in a 5-layer PCB, a 2–18-GHz 4-channel CMOS T/R beamformer and, a 256-element 28-GHz wirelessly-powered active relay transceiver with TDD-sync-free bidirectional amplifiers for robust high-capacity links.
Technical Papers
Abstract
Tu1C-1: A 2–18 GHz Integrated 4-Channel Transmit/Receive Beamformer in 65-nm CMOS
(08:00 - 08:20)
Abstract
Tu1C-2: A K-Band 4-Beam Phased Array Transmitter in Only 5-Layer PCB Enabled by Silicon-Assisted Beam-Combining Network for SATCOM
(08:20 - 08:40)
Abstract
Tu1C-3: Scalable and Compact Fully-Connected Network based on Gm-Cell Grid for 28-GHz Multi-stream MIMO Receiver
(08:40 - 09:00)
Abstract
Tu1C-4: A 256-Element 28GHz 5G NR Wirelessly-Powered Active Relay Transceiver with TDD Synchronization Free Bidirectional Amplifiers
(09:00 - 09:20)
Abstract
Tu1C-5: A W-Band FMCW Radar Transceiver with Self-Calibrated Type-III ADPLL Achieving 1.27-cm Range Resolution for Imaging Applications
(09:20 - 09:40)
Tu1J: High-speed Optical Transceivers
Location
255
Abstract
Next-generation optical interconnects must achieve 200G/400G data rates per lane to support future intra-datacenter requirements. This session showcases high-performance optical transmitter and receiver building blocks engineered to meet these scaling demands. Presentations will cover a diverse range of cutting-edge material platforms and processes, including SiGe, CMOS, Thin-Film Lithium Niobate (TFLN), and InP, highlighting their roles in achieving the necessary power efficiency and signal integrity for the next era of data centers.
Technical Papers
Abstract
Tu1J-1: A 460 Gb/s PAM-4 Linear Distributed Driver with 105 GHz BW for TFLN Modulators in 130nm SiGe BiCMOS
(08:00 - 08:20)
Abstract
Tu1J-3: A 4×212 Gbps 3.34pJ/bit Electronic-Photonic Co-Designed Transmitter Chipset in 0.18-um SiGe BiCMOS and 90nm Silicon Photonics
(08:40 - 09:00)
Abstract
Tu1J-4: A 55-GHz Bandwidth PAM-4 InP DHBT Photoreceiver Based on PD–TIA Co-Design for >112-GBd Optical Transceivers
(09:00 - 09:20)
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Tu2A: Broadband RF Front-End Components for Next‑Generation Wireless Systems
Location
252AB
Abstract
This session showcases recent innovations in RF front-end design from across the industry that enable the performance, bandwidth, and integration demands of emerging wireless standards. The talks highlight breakthroughs in low-noise amplification, switching, and frequency generation across CMOS, SiGe, and SOI technologies. Topics include N‑path receiver architectures optimized for WiFi 7 multi‑link operation, high‑gain D‑band LNAs, power‑efficient millimeter‑wave LNAs for 5G applications, broadband frequency doublers in advanced SiGe processes, and fully differential DC‑capable RF switching solutions. Together, these contributions showcase state‑of‑the‑art techniques that push the limits of noise performance, linearity, bandwidth, and integration in modern RF systems.
Technical Papers
Abstract
Tu2A-1: A 5-7GHz Channel and Bandwidth Selective Shunt N-Path LNA Based Receiver with +6dBm OOC IB1dB, <-71dBm LO Re-Radiation for WiFi 7 Multi-Link Operation
(10:10 - 10:30)
Tu2B: Advanced Phase-Locking and Clock Generation Techniques
Location
254AB
Abstract
This session explores cutting-edge clock generation architectures achieving sub-30fs jitter and superior spur suppression.The first paper introduces an 8–28-GHz DLL with nested feedback to overcome inverter delay limits. The second paper demonstrates a 6.2-GHz sampling PLL with 18.2-fsrms jitter using bottom-plate sampling. The third paper describes a fractional-N digital PLL reaching 25.4-fs jitter via a series-resonance DCO and power-gated oscillator. The fourth paper presents a ring-oscillator clock multiplier using a reference quadrupler for enhanced noise suppression. Finally, the last paper details a 5-GHz ring-oscillator PLL employing over-sampling feedforward cancellation for a record –267.05-dB FoM.
Technical Papers
Abstract
Tu2B-1: An 8–28-GHz 16-Phase Delay Locked Loop Employing Nested Feedback Loops in 28-nm CMOS
(10:10 - 10:30)
Abstract
Tu2B-2: A 6.2-GHz Reference-Feedthrough-Suppressed Type-I Sampling PLL with a Bottom-Plate-Sampling PD Scoring 18.2 fsrms Jitter, −258.7-dB FoM and −80.6-dBc Reference Spur
(10:30 - 10:50)
Abstract
Tu2B-3: A 25.4fs Jitter Fractional-N Digital PLL with an LC-Based Power-Gated Oscillator and Series-Resonance DCO
(10:50 - 11:10)
Abstract
Tu2B-4: A 2.4-GHz 168-fsrms-Jitter and –56-dBc-Reference-Spur RO-Based Cascaded Injection-Locked Clock Multiplier
(11:10 - 11:30)
Abstract
Tu2B-5: An Ultra Low Noise 5-GHz Ring Oscillator-Based PLL with Over-Sampling Feedforward Phase Noise Cancellation Achieving -267.05 dB FoMN
(11:30 - 11:50)
Tu2C: Next Generation Sub-THz Circuit Blocks
Location
257AB
Abstract
This session showcases enabling circuit blocks for next-generation sub-THz transceivers. The talks span key front-end functions such as attenuation, low-noise amplification, frequency generation, and phase shifter, targeting wideband operation and robust performance across process, voltage, and temperature.
Technical Papers
Abstract
Tu2C-1: A 110-170 GHz Phase-Insensitive and PVT-Robust Digital-Step Attenuator with Phase Compensation and Background Step Calibration
(10:10 - 10:30)
Abstract
Tu2C-2: A 121/145 GHz Dual-Band LNA with Single-Path and Dual-Mode Gain-Boosting Core in 28 nm CMOS
(10:30 - 10:50)
Abstract
Tu2C-3: A 224-GHz 5.9-dBm-Pout VCO Utilizing Deep-Triode-Induced Current Top-Clipping Technique
(10:50 - 11:10)
Abstract
Tu2C-4: A 111.5GHz-to-163.6GHz 37.9%-Tuning-Range -200.3dBc/Hz-FoMT VCO Employing Hybrid Coarse-Magnetic-Tuning and Fine-Capacitive-Tuning Techniques
(11:10 - 11:30)
Abstract
Tu2C-5: A 220 to 260 GHz Ultra-Compact, Calibration-Free 5-bit Phase Shifter with 1.8 Degrees RMS Phase Error in 9HP SiGe Process
(11:30 - 11:50)
Tu2J: Co-packaged Optics and Die-to-Die Interfaces
Location
255
Abstract
Emerging AI workloads demand an exponential increase in XPU and switch scale-up interconnect bandwidth, alongside high-density die-to-die interfaces. This session explores novel Co-Packaged Optics (CPO) link architectures designed to meet these challenges. Presentations will highlight the use of Micro-Ring Modulators (MRM) and the enhancement of bandwidth through ultra-low-power coherent optics. Key technical deep-dives include UCIe-inspired clock-forwarding and the development of compact, power-efficient building blocks, featuring innovative Phase Interpolator (PI) designs.
Technical Papers
Abstract
Tu2J-1: A 1.49 pJ/b 4-Channel 256-Gb/s MRM-Based Coherent Co-Packaged Optics with Linear Carrier Phase Recovery
(10:10 - 10:30)
Abstract
Tu2J-2: A 200Gbps 0.67pJ/bit Transceiver Front-end for silicon-photonic with group delay and nonlinear adjustment in 28nm CMOS
(10:30 - 10:50)
Abstract
Tu2J-3: An 8×64 Gb/s PAM-4 Retimed Optical Receiver with Forwarded Clock for UCIe Compliant Optical I/O in 28-nm CMOS
(10:50 - 11:10)
Abstract
Tu2J-4: A 3.5-to-14GHz, Less-Than-0.81LSB-INLpp, 7b Adaptive Phase Interpolator with Segment-Squeeze INL Calibration Algorithm for Die-to-Die Interfaces
(11:10 - 11:30)
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Tu3A: Recent advances in GaN technology
Location
252AB
Abstract
GaN technologies continue to attract strong interest for applications demanding high power density. This session highlights recent advances in GaN device technologies spanning recess-free, near enhancement-mode high-performance InAlGaN/GaN HEMTs; a scalable GaN-on-Si process with high power density and linearity for FR3; heterogeneous integration of GaN power amplifiers using diamond interposers; and nonlinear electro‑thermal models enabling accurate MMIC HPA prediction up to V-band.
Technical Papers
Abstract
Tu3A-1: High-Performance Near-Enhancement-Mode InAlGaN/GaN HEMTs on Silicon with High fT/fMAX of 71.5/173.1 GHz for Millimeter-Wave Applications
(13:30 - 13:50)
Abstract
Tu3A-4: A 4 W Heterogeneous Power Amplifier with GaN-on-Si Dielets in Single-Crystal Diamond Interposer for 6G FR3 Applications
(14:30 - 14:50)
Tu3B: Next-Generation CMOS Oscillators for RF and Millimeter-Wave
Location
254AB
Abstract
The papers in the seesion present advanced CMOS VCO architectures achieving wide tuning ranges and state-of-the-art phase noise. Innovations include multi-tap inductors for flicker suppression, harmonic-phase tuning via transformer-based impedance control, balanced inverse-class-F operation, multiphase class-B coupling, and dual-mode series-resonance techniques, delivering high FoM across GHz frequencies with competitive power efficiency.
Technical Papers
Abstract
Tu3B-1: A Transformer-Based Inverse-Class-F-Like VCO With a Digitally Controlled Common-Mode Impedance Tuner
(13:30 - 13:50)
Abstract
Tu3B-2: A 5.56–9.09 GHz Octa-Core Dual-Mode DCO Based on Multi-Tap Three-Turn Inductor Achieving 195.7 dBc/Hz FoM and Wideband Flicker PN Suppression
(13:50 - 14:10)
Abstract
Tu3B-3: A 7.0-to-8.6 GHz Balanced Class-F-1 VCO with a Trifilar Transformer-Based Tank Achieving 194.5 dBc/Hz FoM
(14:10 - 14:30)
Abstract
Tu3B-4: Harmonically-Coupled, Current‑Sharing 4-Phase and 6-Phase Oscillators in 65 nm CMOS
(14:30 - 14:50)
Abstract
Tu3B-5: A 10.66-to-15.03 GHz Dual-Core Dual-Mode Series Resonance VCO Achieving 209 dBc/Hz FoMTA
(14:50 - 15:10)
Tu3C: Advanced Integration Technologies for Power Amplifier and Low-Noise Amplifier Design
Location
257AB
Abstract
This session explores advanced integration technologies for power amplifiers (PAs) and low-noise amplifiers (LNAs), pushing the boundaries of performance and size across a wide range of frequencies. The session begins with a 3D-RDL integration approach for a LDMOS Doherty PA module operating in the 3.4–3.8 GHz band, demonstrating innovative packaging solutions for enhanced compactness. Next, the first GaN-on-Silicon (GaN/Si) Doherty PA operating above 7 GHz is presented, showcasing the potential of GaN/Si technology for 5G FR3 applications. The session then transitions to mmWave applications, featuring a 60 GHz LNA and PA designed and fabricated in an advanced gate-all-around (GAA) CMOS process, demonstrating the capabilities of advanced CMOS logic technologies for mmWave. Finally, the session ends with a 300 GHz PA design in a 130 nm SiGe technology, pushing the envelope of SiGe-based solutions for sub-THz applications.
Technical Papers
Abstract
Tu3C-1: 3D-RDL and Bondwire Technology Comparison for Implementation of a 10W Broadband Three-way LDMOS Doherty Power Amplifier
(13:30 - 13:50)
Abstract
Tu3C-2: A 10-W 7-GHz GaN-on-Si Doherty Power Amplifier with Hybrid MMIC-Module Integration for 6G FR3 Base-Station Applications
(13:50 - 14:10)
Abstract
Tu3C-3: A 60GHz LNA and PA Achieving 5dB NF and 35.6% Peak PAE in a Gate-All-Around (GAA) CMOS Process with Backside Power Delivery
(14:10 - 14:30)
Abstract
Tu3C-4: A Wideband and Linear 300 GHz Power Amplifier in 130 nm SiGe BiCMOS Technology
(14:30 - 14:50)
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Tu4A: Energy Aware RF Techniques for Sensing and Communication
Location
252AB
Abstract
This session presents low-power RF designs targeting sensing and communication applications. The first paper introduces a mixer-first pulsed-LO beam-steering receiver enabling PLL-free operation with scalable power-performance trade-offs. The second paper presents a multi-source RF energy-harvesting IC with event-driven 3-D maximum power point tracking and SIMO regulation. The third paper reports a wideband active true-time-delay circuit achieving fine delay control for efficient self-interference cancellation in full-duplex systems. The final paper demonstrates a miniature LEO satellite localization tag using algorithm–hardware co-design to reduce required EIRP by 10 dB while achieving a highly compact integrated transmitter.
Technical Papers
Abstract
Tu4A-2: MSCR: Multi-Source-Collaborative Reconfigurable RF Energy Harvester With 3-D MPPT Achieving -32 dBm Sensitivity and 8x Boost in Available Output Power
(16:00 - 16:20)
Abstract
Tu4A-3: High Resolution Active True Time Delay with Quasi-Quadrature Generator with 31.7 dB/ 500 MHz Self-Interference Cancellation for Full-Duplex Communication
(16:20 - 16:40)
Abstract
Tu4A-4: A 1 × 2 cm Localization Tag with a 2.92 GHz Transmitter Chipset for LEO Satellite Localization Using Hardware and Algorithm Co-design
(16:40 - 17:00)
Tu4B: mm Wave Front End Building Blocks for Signal Amplification and Generation
Location
254AB
Abstract
This session highlights recent advances in mm Wave front end building blocks spanning LNAs, PAs, robust T/R interfaces, and broadband LO generator. Building on the growing demands of broadband links and emerging applications such as satellite communications, the papers in this session emphasize robustness and reconfigurability alongside state-of-the-art performance. Topics include a blocker tolerant K-band LNA with strong Ka band TX rejection and a 12–28 GHz LNA used to demonstrate an automated schematic–layout co-optimization platform that tightens the loop between design specs and physical implementation. On the transmit side, a comparison of two SiGe complementary mm Wave PAs, as well as a frequency reconfigurable dual band T/R front end designed to maintain operation under severe load mismatch will be presented. A LO generator with oscillator-embedded artificial line is demonstrated for wideband next-generation radio.
Technical Papers
Abstract
Tu4B-1: Design and Comparison of Two SiGe Complementary Millimeter-Wave Power Amplifiers
(15:40 - 16:00)
Abstract
Tu4B-2: A Millimeter-Wave Frequency Reconfigurable Dual-Band T/R Front-End for 2.5:1 VSWR-Resilient in TX Operations
(16:00 - 16:20)
Abstract
Tu4B-3: A 47-to-100GHz Oscillator-embedded Artificial Transmission Line
based LO Generator Achieving Averaged FoMt of -193.7 dBc/Hz
(16:20 - 16:40)
Abstract
Tu4B-4: A Blocker-Tolerant K-Band LNA with 52-dB Ka-Band TX Rejection for Satellite Communications
(16:40 - 17:00)
Abstract
Tu4B-5: A General-Purpose Schematic-Layout Co-Optimization Platform for RFIC Design Demonstrated with a 1.7-dB-NF 12-28GHz LNA
(17:00 - 17:20)
Tu4C: Advances in Devices and Circuits for System Integration
Location
257AB
Abstract
This session presents recent advancements in device and circuits for system integration. Notable component advances include: a low loss X-Band Switched-Capacitor Delay Element and signal repeater implemented in 45nm SOI CMOS technology; a dual-mode circular cavity filter; a high-performance RF-SOI switch fabricated on 130nm 200mm technology platform that incorporates a 65nm device; and a multi-channel transceiver featuring Built-in-Self test functionality enabled by integrated directional couplers. These papers represent significant progress in the field, driving enhanced system integration with optimized performance.
Technical Papers
Abstract
Tu4C-1: Accurate, High Coverage On-Chip Built-in Self-Test Adopting Precision-Enhanced Power Detection and Multipath Loopback for mmWave Radar IC Measurements
(15:40 - 16:00)
Abstract
Tu4C-3: Sub-60 fs RFSOI Switch Performances in Advanced 200 mm 130/65 nm Hybrid Technology
(16:20 - 16:40)
Abstract
Tu4C-4: A 9-11 GHz Multistage Switched-Capacitor Delay Element and Signal Repeater Achieving 4.6-71.4 ns Delay and 40 dB Gain
(16:40 - 17:00)
Tu4J: Transceiver Architectures for Ultra-Low Power IoT
Location
255
Abstract
This session explores the latest advances in transceivers for the Internet of Things, focusing on ultra-low power consumption and architectural innovation. The session begins with a 2.4-GHz, low-latency wake-up receiver featuring a high-efficiency, VCO-based digital demodulator. The discussion then moves to extreme energy constraints, introducing a battery-less, crystal-less, event-driven UWB tag architecture that consumes less than 100 nW. A spectral- and energy-efficient tag for BPSK WiFi backscatter systems is then presented, integrating a novel sidelobe-rejection technique. The session concludes with a compact, highly efficient, BLE-compliant wireless transmitter optimized for the next generation of low-power wearable applications.
Technical Papers
Abstract
Tu4J-1: A 2.4 GHz 369-μW Low-Latency WuRX with Voltage-to-Frequency Digital Demodulation and Bit-Error Correction
(15:40 - 16:00)
Abstract
Tu4J-2: A Battery-Less Crystal-Less Event-Driven UWB Tag With Hybrid Power Management Network and PI-CDR-Based Wake-Up Receiver
(16:00 - 16:20)
Abstract
Tu4J-3: An 802.11b-WiFi Backscatter Modulator Featuring 30 dB PSLR with All-Digital Gaussian Pulse Shaping
(16:20 - 16:40)
Abstract
Tu4J-4: A Fully Integrated 2.4GHz BLE Transmitter with ADPLL and Class-G Switched-Capacitor PA Achieving 30% System Efficiency
(16:40 - 17:00)