Sub-60 fs RFSOI Switch Performances in Advanced 200 mm 130/65 nm Hybrid Technology

Radio Frequency Front End Modules are currently realized using various technologies. However, since integration drives wireless business to achieve appropriate cost and form factor, CMOS Silicon-on-Insulator technology was adopted 10 years ago and is now the dominant solution for Radio Frequency switches in front end modules for cell phones and Wi-Fi. While switch performances integrated on RF Silicon-on-Insulator have exceeded what was feasible with GaAs, sixth generation system requirements demand even more stringent performance, so this technology must continue improving. This paper proposes and discusses the optimization of an advanced 200 mm Silicon-on-Insulator technology, which achieved a record RON × COFF of 60 fs by introducing 65 nm gate length at the front end of the line to reduce channel resistance. Furthermore, an innovative air gap process at the back end of the line is proposed to reduce parasitic capacitance.