GH10-10 Nonlinear Thermal Model Capability & 3W SatCom HPA

This paper provides a deep overview of the thermal behavior of 0.1-µm GaN HEMTs technology. As an intermediary between the device HEMT process and the MMIC circuit, the electrical model plays a crucial role in the design accuracy. It should predict the device’s features and parasitic phenomena impact. The technology performance versus the temperature will be first discussed with a focus on the high nonlinear model accuracy reached on the transistor an on the MMIC HPAs demonstrated at UMS up to V-Band