Deep Traps in GaN-on-Silicon HEMT Devices and their Effects on RF Performance

5G has been a transformative power in consumer communications. Its incremental introduction has resulted in high complexity, resulting in high development costs and power consumption. FR3 is poised to address these while enabling higher bandwidth, massive MIMO, multi-function radios, and native non-terrestrial network. FR3 will need smaller and similarly priced RFFE modules with high power output and good linearity, which can be enabled by GaN/Si. First, GaN’s dynamic Rdson, gate lag, and drain lag issues due to deep traps need to be understood and addressed. In this communication, we are looking at correlations between GaN/Si physical and electrical properties.