Innovations in GaN-on-Silicon Technology for High Performance Power and RF Applications

Intel developed industry’s first 300mm GaN-on-Silicon process technology on high-resistivity silicon wafers in a leading advanced CMOS fab. We enhance the performance and density of GaN MOSHEMT transistor by harnessing advanced 300mm process technology innovations inspired by Moore’s law scaling such as high-k metal gate, regrown epi source/drain, submicron field-plate and copper interconnect. Another developing innovation is monolithic integration of GaN and Si CMOS by 3D layer transfer. Also, advanced engineered substrates, such as GaN-on-TR SOI (trap-rich), achieves better performance by reducing signal loss and better signal linearity, and enabling advanced integration schemes through backside substrate processing.