Chipletization, RF design and thermal modelling of mmW InP Power Amplifiers and Modules

This talk focuses on the integration of InP Power Amplifier chiplets onto IMEC's 300 mm RF Silicon Interposer technology. Combining high frequency InP transistors with a RF optimized Silicon Interposer, we aim to retain the better performance of III-V devices where needed and simultaneously implement the rest of the system in Silicon processes to lower cost. It is hoped that this would enable the adoption of III-V devices in mm-wave systems.