Broadband Characterization of mm-Wave GaN HEMTs Beyond 100GHz

Gallium nitride (GaN) high electron mobility transistors (HEMTs) are a critical technology for numerous RF and microwave applications including radar, communications, satellite communications, and electronic warfare due to its unique combination of high current and high voltage operational capabilities. Scaled gate length GaN HEMTs have emerged as a contender for superior power performance at mm-wave frequencies, and various foundries have entered the market in manufacturing <100nm GaN HEMTs. In order to enable widespread use of mm-wave GaN HEMTs for various applications, it is critical to understand the effects of calibration non-idealities and uncertainties on broadband GaN HEMT modeling for mm-wave applications. This talk will focus on characterization of mm-wave GaN HEMTs from DC to beyond 100GHz with an emphasis on accurate modeling.