Characterization and Modeling of Trapping Effects in AlGaN/GaN HEMTs for Predicting Power Amplifier Linearization

Deep-level trap centers are still used in AlGaN/GaN HEMT devices to prevent buffer-current leakage. Unfortunately, these defects induce long-term memory effects in these devices, which significantly impact the behaviour of power amplifiers (PAs), making their modeling essential. This talk starts by explaining the physical mechanism behind the trapping effects and their strong dependence on device temperature. It then highlights some recent advances in device characterization, which are fundamental to developing non-linear equivalent-circuit models that can accurately replicate the well-known slow-trapping transients. Finally, the talk demonstrates how the thermal and trapping effects can interact and how modeling this interaction correctly is required for the accurate prediction of the linearizability of GaN/HEMT-based PAs.