Advanced GaN HEMT Characterization and Modeling Techniques

Nowadays, last generation of GaN devices for microwave and mm-wave applications are incredibly high-performing with more and more advanced electrical characteristics able to guarantee high power levels up to very high frequencies. The outstanding behavior of such devices is mandatory to satisfy the highly demanding specifications of 5G and 6G systems. A quick and effective evaluation of the device performance and restrictions is crucial to investigate the devices robustness and extract accurate models, which can steer the future power amplifier designs towards performance improvements guaranteeing a good level of reliability. Indeed, improving at device level means improving at system level. In this talk, we delve into non-linear measurement techniques which enable the accurate characterization of microwave GaN HEMTs under actual operating conditions showing how they can be fruitfully used to evaluate the technology performance under reliable operating conditions and extract accurate non-linear models. The benefits of using such non-linear characterization techniques are highlighted giving some practical examples on state-of-the-art GaN technologies.