A GaN Technology to Meet Future Radio Requirements

GaN has emerged as a transformative technology to address the demanding requirements of modern wireless communication systems. Its superior power and performance have made it the choice for infrastructure and military applications. By leveraging the excellent electrical properties of GaN alongside the cost-effectiveness and scalability of silicon substrates, GaN-on-Si holds the potential to penetrate low-power applications traditionally dominated by other semiconductors. This presentation introduces Sony’s innovative low-voltage, high-performance GaN-on-Si semiconductor process. We explore its capabilities in addressing both user equipment and base station applications, with a particular emphasis on the emerging FR3 bands, highlighting the advantages and the remaining challenges.