Characterization Techniques Tailored to GaN Devices for Communication Applications

This talk is dedicated to the characterization of GaN RF devices for the ever-increasing needs of the communications industry. Firstly, a unified framework is presented for identifying relevant metrics related to dispersive effects using a custom-built transient setup. In the second part, transistor-level characterization strategies are discussed as useful tools for designing GaN-based power amplifiers in the microwave and mm-wave ranges.