Reliability Challenges of GaN-on-Si RF Technologies

The rapid development of GaN technology has transformed the RF industry, enabling high-frequency, high-power, and high-efficiency operations for RF systems across a range of market segments. Despite the benefits offered by the material, device reliability remains a significant challenge in GaN-on-Si RF technologies. Achieving long-term stability requires a comprehensive understanding of the underlying reliability issues. In this talk, I will address the reliability challenges faced by GaN-on-Si RF technologies under various bias conditions. Additionally, I will explore the latest insights into the failure mechanisms affecting these devices, shedding light on key factors that impact their long-term performance.