Characterization and Modeling of HEMTs Beyond 110GHz

High electron mobility transistors (HEMTs) have demonstrated operation beyond 1THz, indicating significant potential for RF front-ends in both future communication and sensing applications. In this talk, I will demonstrate the use of advanced testing facilities at the TiC6G labs at the University of Glasgow, including both narrow and broadband, small and large signal on-wafer test systems to benchmark our in-house 50nm and sub-50nm InP-based HEMTs developed at the James Watt Nanofabrication Centre. The discussion also covers how device modeling is employed to explore the potential performance limits of these transistors for RF front-ends in THz communications and sensing technologies.