Design of 22.6-29.5/ 30.4-43.5 GHz Dual-Band Low Power LNA with 2.6-3.8 dB NF for Millimeter-Wave 5G Applications in 28-nm CMOS

This paper presents a reconfigurable dual-mode low power low noise amplifier for 5G millimeter-wave applications. In the proposed LNA, a two-stage amplifier is designed with wideband input matching network. Compact switchable triple coupled transformer (STCT) is applied to the interstage matching network. The STCT adjusts transmission poles to enable reconfigurable bands and provides a high image rejection ratio in low band mode. Fabricated in TSMC 28-nm CMOS process, the proposed LNA occupies a compact core size of 0.09 mm2. The measured results show that the low band has a peak gain of 19.7 dB with a 3 dB bandwidth of 22.6-29.5 GHz and the high band has a peak gain of 19.2 dB with a 3 dB bandwidth of 30.4-43.5 GHz. The LNA achieves a minimum NF of 2.6/2.9 dB, and IP1dB of -18.7/-18.3 dBm in the low/high band mode. The total DC power consumption is only 10 mW.