Ga₂O₃ FETs for Future Power and Harsh Environment Electronics

Gallium oxide (Ga₂O₃) has unique and attractive features represented by physical properties based on the bandgap energy of 4.5eV and availability of large-size, high-quality wafers produced from melt-grown bulk single crystals, and thus Ga₂O₃ field-effect transistors (FETs) and diodes have been actively developed all over the world mainly for power switching and harsh environment electronics applications. In this talk, we will discuss our recent works on vertical power and lateral high-frequency Ga₂O₃ FET developments.