A CMOS-Enabled Heterogeneously-Integrated InP HEMT W-band LNA with 2.8-dB Noise Figure at 7.7-dB Gain and 4.5 mW PDC

We report the integration of an Indium Phosphide (InP) high-electron mobility transistor (HEMT) into an RF CMOS wafer for a W-band (60-90 GHz) low-noise amplifier (LNA). One- and two-stage differential LNAs include CMOS circuits that support input power detection and temperature sensing. Prototype LNAs are implemented on both a silicon interposer and a 130-nm RF CMOS process for performance comparison. The 1-stage LNA demonstrates a maximum gain of 12.6 dB and the wideband 2-stage LNA has a peak gain of 15.1 dB. The minimum noise figure of the heterogeneous InP-CMOS LNA is 2.8 dB at 7.7-dB gain while consuming 4.5 mW, outperforming CMOS LNAs in W-band.