Potential—and Challenges—of Ultra-Wide Band Gap Devices for RF Applications

Recent demonstrations of high-quality ultra-wide band gap (UWBG) materials offer an exciting new direction for RF and microwave-frequency device development. With exceptional material-level figures of merit, this material class offers the potential for dramatic advancements in device-level performance. Despite this promise, open questions about how best to exploit these materials, as well as practical and system-level considerations, may complicate the path forward. In this talk, recent work on impact ionization in these materials will be reviewed, and the implications for device performance will be assessed. Directions for future device concepts that harness the performance potential of the materials in view of both fundamental and practical considerations will be discussed.