Circuit Design for Large-Scale Trapped Ions

The ion trapped in a profiled electric potential has been considered as a good candidate for the qubit in quantum computing. While the trapped ions offer advantages of a long coherence time and high-fidelity operations, scaling to a larger system presents challenges that should be overcome for commercialization. Shuttling ions to specific locations, where the gate operations take place, has been investigated as a promising approach. High-voltage RF signals and multiple DC voltages are needed to localize the ions at a specific position. Precisely controlled microwaves should be also applied for high-fidelity gate operations. This talk introduces considerations in circuit design for deeper potential well, higher ion secular frequency, prolonged ion stability, rapid shuttling, and shorter gate operation times.