Chipletization, RF Design and Thermal Modeling of mm-Wave InP Power Amplifiers and Modules

This talk focuses on the integration of InP Power Amplifier chiplets onto imec’s 300mm RF silicon interposer technology. Combining high frequency InP transistors with a RF optimized silicon interposer, we aim to retain the better performance of III-V devices where needed and simultaneously implement the rest of the system in silicon processes to lower cost. It is hoped that this would enable the adoption of III-V devices in mm-wave systems.