Technical Sessions

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Giuseppe GRAMEGNA
IMEC
Magnus Wiklund
BeammWave AB
Location
150AB
Abstract

In this session five mm-wave integrated transmitters, receivers, phase arrays suitable for wireless communication and sensing are presented.
The session starts with a 60-GHz Positive-Feedback-Based Transmitter Front-End with a maximum 22.8% PAE in 28-nm Bulk CMOS for Inter-Satellite Communications.
The second paper reports A Ka-band 8-element 4-Beam Transmitter Front End with Hybrid VGA and Symmetrical Transformer-based Doherty PA.
The third paper describes a 32-element 25.8-30.8 GHz phased-array CMOS transmitter with programable temperature compensation technique that achieves ±0.002 dB/°C gain variation across –60-to-85 °C.
The fourth paper demonstrates a 45nm SOI 5G blocker-tolerant mm-wave MIMO receiver with up to 41dB spatial notch filtering.
Final paper of the session reports a 56 – 65 GHz FMCW radar transceiver with 7.8 dB NF and 8 GHz Chirp-Bandwidth in 65-nm CMOS.

Technical Papers
Abstract
RMo1A-1: A 60-GHz Positive-Feedback-Based Transmitter Front-End with 22.8% PAEmax in 28-nm Bulk CMOS for Inter-Satellite Communications
Kaijie Ding, Dusan Milosevic, Vojkan Vidojkovic, Khaled Khalaf, Mark Bentum, Peter Baltus
Kaijie Ding, Eindhoven Univ. of Technology
Eindhoven Univ. of Technology, Eindhoven Univ. of Technology, Eindhoven Univ. of Technology, Pharrowtech, Eindhoven Univ. of Technology, Eindhoven Univ. of Technology
(08:00 - 08:20)
Abstract
RMo1A-2: A Ka-band 8-element 4-Beam Transmitter Front End with Hybrid VGA and Symmetrical Transformer-based Doherty PA
Huiyan Gao, Hang Lu, Shaogang Wang, Nayu Li, Gaopeng Chen, Chunyi Song, Yen-Cheng Kuan, Qun Jane Gu, Zhiwei Xu
Huiyan Gao, Zhejiang Univ.
Zhejiang Univ., Zhejiang Univ., Zhejiang Univ., Zhejiang Univ., Zhejiang Univ., Zhejiang Univ., National Yang Ming Chiao Tung Univ., Univ. of California, Davis, Zhejiang Univ.
(08:20 - 08:40)
Abstract
RMo1A-3: A 32-Element 25.8-to-30.8 GHz Phased-Array CMOS Transmitter with Programable Piecewise Linear Temperature-Compensation Technique Achieving ±0.002 dB/°C Gain Variation across –60-to-85 °C
Dongze Li, Wei Deng, Ziyuan Guo, Haikun Jia, Xintao Li, Xiangyu Nie, Ruiheng Qiu, Baoyong Chi
Dongze Li, Tsinghua Univ.
Tsinghua Univ., Tsinghua Univ., Tsinghua Univ., Tsinghua Univ., Tsinghua Univ., Tsinghua Univ., Tsinghua Univ., Tsinghua Univ.
(08:40 - 09:00)
Abstract
RMo1A-4: A Blocker-Tolerant mm-Wave MIMO Receiver with Spatial Notch Filtering Using Non-Reciprocal Phase-Shifters for 5G Applications
Shahabeddin Mohin, Soroush Araei, Mohammad Barzgari, Negar Reiskarimian
Shahabeddin Mohin, Massachusetts Institute of Technology
Massachusetts Institute of Technology, Massachusetts Institute of Technology, Massachusetts Institute of Technology, Massachusetts Institute of Technology
(09:00 - 09:20)
Abstract
RMo1A-5: A 56 – 65 GHz Highly-Integrated FMCW Radar Transceiver with 7.8dB NF and 8 GHz Chirp-Bandwidth in 65-nm CMOS
Jiangbo Chen, Shengjie Wang, Jiabing Liu, Qizhou Yang, quanyong li, Jane Gu, Chunyi Song, Na Yan, Zhiwei Xu, Hui Nie
Jiangbo Chen, Zhejiang Univ.
Zhejiang Univ., Zhejiang Univ., Zhejiang Univ., Zhejiang Univ., Zhejiang Univ., Univ. of California, Davis, Zhejiang Univ., Fudan Univ., Zhejiang Univ., Zhejiang Univ.
(09:20 - 09:40)
Frederic Gianesello
STMicroelectronics
Harshpreet Bakshi
Texas Instruments, Inc.
Location
151AB
Abstract

This session is dedicated to advances in Silicon and III-V technologies enabling innovative mmW IC design ultimately leveraging advanced packaging including heterogeneous integration strategies to develop next generation mmW systems. The first paper of the session will describe a wideband 5G FR2 5G FEM in 150-nm GaN on SiC technology. The second paper will then extend III-V technology capability by proposing an innovative heterogeneous integration with Silicon technology. The third paper focuses on advanced packaging by presenting a high performance glass interposer targeting D-band mmW system. The fourth paper presents advances in Silicon technologies by introducing an innovative LDMOS device in 22-nm FD SOI technology targeting Wi-Fi power amplifiers, while the fifth and final paper will complement this update on PA design by introducing an innovative wideband directional coupler design achieved in RF SOI technology.

Technical Papers
Abstract
RMo1B-1: A 24-30 GHz GaN Front-End MMIC with Coupled-Resonator based Transmit/Receive Switch for 5G Millimeter-Wave Applications
Dingyuan Zeng, Haoshen Zhu, Qi Cai, Guangxu Shen, Outong Gao, Wenquan Che, Quan Xue
Dingyuan Zeng, South China Univ. of Technology
South China Univ. of Technology, South China Univ. of Technology, Nanjing University of Posts and Telecommunications, Nanjing University of Posts and Telecommunications, South China Univ. of Technology, South China Univ. of Technology, South China Univ. of Technology
(08:00 - 08:20)
Abstract
RMo1B-2: Heterogeneously-Integrated Gallium Nitride and Indium Phosphide Devices for Ka-band Amplifiers
Justin Kim, Michael Hodge, Mark Soler, Florian Herrault, Daniel Green, James Buckwalter
Justin Kim, PseudolithIC, Inc.
PseudolithIC, Inc., PseudolithIC, PseudolithIC, Inc., PseudolithIC, PseudolithIC, PseudolithIC
(08:20 - 08:40)
Abstract
RMo1B-3: A G-Band Glass Interposer Technology for the Integration of an Amplified Noise Source based on SiGe BiCMOS 55-nm Technology
Maya Alawar, Victor Fiorese, Sylvie Lepilliet, Daniel Gloria, Guillame Ducournau, Emmanuel Dubois
Maya Alawar, Univ. of Lille
Univ. of Lille, STMicroelectronics, Univ. of Lille, STMicroelectronics, Univ. of Lille, Univ. of Lille
(08:40 - 09:00)
Abstract
RMo1B-4: A 22FDX® Wi-Fi PA demonstrating a new LDMOS Device with 10V Breakdown achieving Output Power of 29.5dBm at 40% PAE
Arul Balasubramaniyan, Xuemei Hui, Abdellatif Bellaouar, Miguel Meza Campos, Apurv Bharadwaj, Elanchezhian Veeramani, Shafiullah Syed
Arul Balasubramaniyan, GLOBALFOUNDRIES
GLOBALFOUNDRIES, GLOBALFOUNDRIES, GLOBALFOUNDRIES, GLOBALFOUNDRIES, GLOBALFOUNDRIES, GLOBALFOUNDRIES, GLOBALFOUNDRIES
(09:00 - 09:20)
Abstract
RMo1B-5: A Reconfigurable Compact Multiband RF Bi-directional Coupler for sub-6 GHz RF Front-Ends in RF SOI CMOS Switch Technology
Ting-Li Hsu, Amelie Marietta Hagelauer, Valentyn Solomko
Ting-Li Hsu, Tech. Univ. of Munich
Tech. Univ. of Munich, Tech. Univ. of Munich, Infineon Technologies AG
(09:20 - 09:40)
Pierluigi Nuzzo
Univ. of Southern California
Yao-Hong Liu
IMEC
Location
152AB
Abstract

This session provides an overview of the latest advances in RF systems for low-power sensing and 5G applications. It features a self-reconfigurable RF energy harvesting system with voltage regulation and wide power dynamic range as well as a compact RFSOI CMOS 5G phased-array transceiver with outstanding TX average output power performance and RX noise figure. The session then introduces a novel RF sensing system with enhanced linearity and dynamic range for microplastic detection followed by a record harmonic-rejection-ratio frequency quadrupler for 5G applications and a time-division power and data transfer system for wirelessly powered biopotential sensing.

Technical Papers
Abstract
RMo1C-1: A 2.4 GHz, -19dBm Sensitivity RF Energy Harvesting CMOS Chip with 51% Peak Efficiency and 24 dB Power Dynamic Range
Jing-Ren Yan, Yao-Wei Huang, Wei-Jen Lai, Jen-Hao Liao, Ching-Chun Lin, Yu-Te Liao
Jing-Ren Yan, National Yang Ming Chiao Tung Univ.
National Yang Ming Chiao Tung Univ., National Yang Ming Chiao Tung Univ., Novatek Microelectronics Corp., Novatek Microelectronics Corp., Novatek Microelectronics Corp., National Yang Ming Chiao Tung Univ.
(08:00 - 08:20)
Abstract
RMo1C-2: A 45 nm RFSOI CMOS-based 24.25-29.5 GHz 2×16-Channel Phased-Array Transceiver IC for 5G NR Applications
Jooseok Lee, Seungjae Baek, Kihyun Kim, Seungwon Park, Hansik Oh, Taewan Kim, Joonho Jung, Jinhyun Kim, Sehyug Jeon, Jee Ho Park, Woojae Lee, Jaehong Park, Dong-hyun Lee, Sangho Lee, Jeong Ho Lee, Ji Hoon Kim, Younghwan Kim, Sangyong Park, Bohee Suh, Soyoung Oh, Dongsoo Lee, Juho Son, Sung-gi Yang
Jooseok Lee, Samsung Electronics Co., Ltd.
Samsung Electronics Co., Ltd., Samsung Electronics Co., Ltd., Samsung Electronics Co., Ltd., Samsung Electronics Co., Ltd., Samsung Electronics Co., Ltd., Samsung Electronics Co., Ltd., Samsung Electronics Co., Ltd., Samsung Electronics Co., Ltd., Samsung Electronics Co., Ltd., Samsung Electronics Co., Ltd., Samsung Electronics Co., Ltd., Samsung Electronics Co., Ltd., Samsung Electronics Co., Ltd., Samsung Electronics Co., Ltd., Samsung Electronics Co., Ltd., Samsung Electronics Co., Ltd., Samsung Electronics Co., Ltd., Samsung Electronics Co., Ltd., Samsung Electronics Co., Ltd., Samsung Electronics Co., Ltd., Samsung Electronics Co., Ltd., Samsung Electronics Co., Ltd., Samsung Electronics Co., Ltd.
(08:20 - 08:40)
Abstract
RMo1C-3: A Fully Integrated Microplastic Detection SoC with 0.1–3 GHz Bandwidth and 35 dB Dynamic Range for Narrow-Band Notch RF MEMS Sensor System
Seung-Beom Ku, Jinhyoung Kim, Kwon-Hong Lee, Han-Sol Lee, Kyeongho Eom, Joonghoon Kang, Hyungjin Jung, Cheolung Cha, Hyung-Min Lee
Seung-Beom Ku, Korea Univ.
Korea Univ., Korea Electronics Technology Institute, Korea Univ., Korea Univ., Korea Univ., Korea Univ., Korea Univ., Korea Electronics Technology Institute, Korea Univ.
(08:40 - 09:00)
Abstract
RMo1C-4: A 21-27-GHz Frequency Quadrupler in 0.13um SiGe BiCMOS with 0-dBm Pout and 40-dBc HRR for Wideband 5G Applications
Caglar Ozdag, Arun Paidimarri, Masayuki Yoshiyama, Yuichiro Yamaguchi, Yujiro Tojo, Bodhisatwa Sadhu
Caglar Ozdag, IBM Research
IBM Research, IBM T.J. Watson Research Center, Fujikura Ltd., Fujikura Ltd., Fujikura Ltd., IBM T.J. Watson Research Center
(09:00 - 09:20)
Abstract
RMo1C-5: Design of a Dual-Mode Coil-Reuse Data Acquisition System for Miniaturized Wirelessly Powered Biopotential Sensing Nodes
Hamid Jafari Sharemi, Aydin Babakhani
Hamid Jafari Sharemi, Univ. of California, Los Angeles
Univ. of California, Los Angeles, Univ. of California, Los Angeles
(09:20 - 09:40)

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Abhishek Agrawal
Intel Corp.
Andrea Bevilacqua
Univ. of Padova
Location
150AB
Abstract

This session presents a variety of techniques for mm-Wave and RF circuits. The papers report bi-directional front-ends and integrated TRSW-LNA-PA for 5G and satcom communications, along with a J-band TX/RX chipset and a variable attenuator for power detection applications.

Technical Papers
Abstract
RMo2A-1: A Compact Ka-Band Bi-Directional PA-LNA with 17.4-dBm Psat Using Three-Stack Power Amplifier in 28-nm CMOS
Jun Hwang, Byung-Wook Min
Jun Hwang, Yonsei Univ.
Yonsei Univ., Yonsei Univ.
(10:10 - 10:30)
Abstract
RMo2A-2: A Reconfigurable Ultra Compact Bi-directional Amplifier with a Build-in-Self Notch Filter for K/Ka-band Satellite Communication
Jian Zhang, Ming Zhai, Wei Zhu, Dawei Wang, Xiangjie Yi, Yan Wang
Jian Zhang, Tsinghua Univ.
Tsinghua Univ., Tsinghua Univ., Beijing Institute of Technology, Tsinghua Univ., Tsinghua Univ., Tsinghua Univ.
(10:30 - 10:50)
Abstract
RMo2A-3: Fully Integrated SiGe HBT BiCMOS Transmit-Receive Front-End IC for 5G mmW Radio with A Reconfigurable Built-In Diode RF Switch
Insu Han, Hanjung Lee, Inchan Ju
Insu Han, Ajou Univ.
Ajou Univ., Ajou Univ., Ajou Univ.
(10:50 - 11:10)
Abstract
RMo2A-4: Non-Coherent TX-RX Chipsets for J-band Communication in 16-nm FinFET CMOS
Berke Gungor, Patrick Reynaert
Berke Gungor, KU Leuven
KU Leuven, KU Leuven
(11:10 - 11:30)
Abstract
RMo2A-5: A Σ∆–Modulated Linear-in-dB Attenuator for On-Chip Power Detection with 0.12 dB Resolution in RF SOI CMOS Switch Technology
Ting-Li Hsu, Valentyn Solomko, Amelie Marietta Hagelauer
Ting-Li Hsu, Tech. Univ. of Munich
Tech. Univ. of Munich, Infineon Technologies AG, Tech. Univ. of Munich
(11:30 - 11:50)
Andrea Mazzanti
Univ. of Pavia
Bichoy Bahr
Texas Instruments
Location
151AB
Abstract

This session presents advancements in VCO performance, employing multi-mode, multi-core architectures, and Impulse Sensitivity Function (ISF) shaping. The first two papers extend frequency tuning range with multi-mode architectures. The third paper reduces phase noise in a triple-push, triple-core DCO for V-band operation. The fourth paper achieves record phase noise reduction in CMOS by combining series resonance in a multi-core architecture. Finally, the last paper demonstrates improved phase noise through ISF shaping with a multi-tank topology.

Technical Papers
Abstract
RMo2B-1: An Octave Tuning Range Quad-Core VCO Using a Compact Quad-Mode Transformer-Based Inductor
Hyunjoon Kim, Sangmin Kim, Sanggeun Jeon
Hyunjoon Kim, Korea Univ.
Korea Univ., Korea Univ., Korea Univ.
(10:10 - 10:30)
Abstract
RMo2B-2: An 18.5-to-36.5 GHz 206.8 dBc/Hz FoMT Quad-Core Triple-Mode VCO with Automatic-Mode-Tracking Output Buffers
Ziyi Lin, Haikun Jia, Wei Deng, Baoyong Chi
Ziyi Lin, Tsinghua Univ.
Tsinghua Univ., Tsinghua Univ., Tsinghua Univ., Tsinghua Univ.
(10:30 - 10:50)
Abstract
RMo2B-3: A 52.3-to-67.3GHz 35.8-kHz-Resolution Triple-Push DCO Exploiting Source-Combining Technique for Third-Harmonic Enhancement Achieving 196.4dBc/Hz Peak FoMT at 10MHz Offset
Qiyao Jiang, Jun Yin, Quan Pan, Rui Martins, Pui-In Mak
Qiyao Jiang, University of Macau
University of Macau, University of Macau, Southern Univ. of Science and Technology, University of Macau, University of Macau
(10:50 - 11:10)
Abstract
RMo2B-4: An 11GHz 8-core Series Resonance CMOS VCO withScalable Ring-coupling Scheme Achieving Phase Noiseof -136.8dBc/Hz at 1 MHz Offset
Shiwei Zhang, Wei Deng, Haikun Jia, Baoyong Chi
Shiwei Zhang, Tsinghua Univ.
Tsinghua Univ., Tsinghua Univ., Tsinghua Univ., Tsinghua Univ.
(11:10 - 11:30)
Abstract
RMo2B-5: A K-Band Voltage-Controlled Oscillator with Gate-Drain Phase Shift Achieving 110 kHz 1/f3 Corner
Zhenghua Jia, Dawei Ye
Zhenghua Jia, Fudan Univ.
Fudan Univ., Huazhong University of Science and Technology
(11:30 - 11:50)
Chun-Huat Heng
National Univ. of Singapore
Justin Wu
AmLogic
Location
152AB
Abstract

This session presents novel techniques for energy efficient performance enhancements to wireless transmitters and receivers. The first paper presents an IoT transmitter employing amplitude and phase calibration to improve harmonic rejection, followed by techniques to improve receiver blocker tolerance using novel N-path mixer-first front end topologies. An energy-efficient polar receiver based on a phase tracking architecture capable of amplitude demodulation is then presented, followed by a phase noise canceling receiver.

Technical Papers
Abstract
RMo2C-1: A Sub-6GHz Wideband Transmitter with LO Harmonic Rejection RF Front-ends Using Frequency-Adaptive Calibration
Haoyu Bai, Dong Wang, Keer Gao, Jiaqi He, Jiazheng Zhou, Junhua Liu, Huailin Liao
Haoyu Bai, Peking Univ.
Peking Univ., Peking Univ., Peking Univ., Peking Univ., Peking Univ., Peking Univ., Peking Univ.
(10:10 - 10:30)
Abstract
RMo2C-2: An 11.8mW 0.4-to-2.6GHz Blocker-Tolerant Receiver with LO Duty-Cycle Compensation and High-Q Selectivity Achieving +15.4/19.2dBm OB-IIP3 at 10/80MHz Offset
Rundi Wu, Yetong Wang, Ran Hong, Kenan Xie, Keping Wang
Rundi Wu, Tianjin Univ.
Tianjin Univ., Tianjin Univ., Tianjin Univ., Tianjin Univ., Tianjin Univ.
(10:30 - 10:50)
Abstract
RMo2C-3: A 2.8-4.3 GHz Simultaneous Dual-Carrier Transformer-Coupled Passive Mixer-First Receiver Front-End Supporting Blocker Suppression
Jamie Ye, Alain Anton, Russ Huang, Sanaz Sadeghi, Alyosha Molnar
Jamie Ye, Cornell Univ.
Cornell Univ., Cornell Univ., Cornell Univ., Cornell Univ., Cornell Univ.
(10:50 - 11:10)
Abstract
RMo2C-4: A 2.3nJ/b 32-APSK Polar Phase-Tracking Receiver with Two-Point Injection Technique
Xuansheng Ji, Jiahao Zhao, Woogeun Rhee, Zhihua Wang
Xuansheng Ji, Tsinghua Univ.
Tsinghua Univ., Tsinghua Univ., Tsinghua Univ., Tsinghua Univ.
(11:10 - 11:30)
Abstract
RMo2C-5: A 0.77mW 1.84nJ/bit Phase Noise Canceling Receiver for QAM and OFDM and Cellular IoT
Trevor Odelberg, David Wentzloff
Trevor Odelberg, Univ. of Michigan
Univ. of Michigan, Univ. of Michigan
(11:30 - 11:50)

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Jane Gu
Univ. of California, Davis
Gernot Hueber
United Micro Technology
Location
150AB
Abstract

In this session five papers on millimeter wave power amplifiers are presented. The session starts with a 60 GHz PA in FDSOI CMOS with 42.3% PAE. The second paper presents a three-way combining wideband PA to achieve high backoff efficiency without load modulation. The third paper demonstrates a 22-44 GHz Doherty PA with 3:1 VSWR variation tolerance. The fourth paper presents a true power detector scheme to achieve >33dB dynamic range. The last paper demonstrates a dual-mode PA to support sub-6 GHz and mm-Wave for 5G FR1 and FR2, respectively.

Technical Papers
Abstract
RMo3A-1: A Class-J/F 60 GHz Power Amplifier with 42.3% Power Added Efficiency in FDSOI CMOS
Mengqi Cui, Jens Wagner, Frank Ellinger
Mengqi Cui, Technische Univ. Dresden
Technische Univ. Dresden, Technische Universität Dresden, Technische Universität Dresden
(13:30 - 13:50)
Abstract
RMo3A-2: A 25-40 GHz Three-Way Power Amplifier with No Load ModulationAchieving Broadband Deep Power Back-Off Efficiency Enhancement
Edward Liu, Han Zhou, Christian Fager, Hua Wang
Edward Liu, ETH Zurich
ETH Zurich, Chalmers Univ. of Technology, Chalmers Univ. of Technology, ETH Zurich
(13:50 - 14:10)
Abstract
RMo3A-3: A 22-44 GHz 28nm FD-SOI CMOS 5G Doherty Power Amplifier with Wideband PAE6dBPBO Enhancement and 3:1 VSWR Resiliency
Gwennaël Diverrez, Eric Kerhervé, Magali De Matos, Andreia Cathelin
Gwennaël Diverrez, Univ. of Bordeaux
Univ. of Bordeaux, Univ. of Bordeaux, Univ. of Bordeaux, STMicroelectronics
(14:10 - 14:30)
Abstract
RMo3A-4: A 25-31GHz Compact True Power Detector with >33dB Dynamic Range in 40nm Bulk CMOS
Haoqi Qin, Junjie Gu, Hao Xu, Zhiwei Xu, Pengcheng Jia, Na Yan
Haoqi Qin, Fudan Univ.
Fudan Univ., Fudan Univ., Fudan Univ., Zhejiang Univ., Starway Communication Inc., Guangdong Province, China, Fudan Univ.
(14:30 - 14:50)
Abstract
RMo3A-5: A Compact Dual-mode CMOS Power Amplifier Covering both Sub-6GHz and mm-Wave Bands for 5G NR
Jingye Zhang, Jiawen Chen, Taotao Xu, Pei Qin, Xiang Yi, Liang Wu, Haoshen Zhu, Wenquan Che, Quan Xue
Jingye Zhang, South China Univ. of Technology
South China Univ. of Technology, Univ. College Dublin, South China Univ. of Technology, South China Univ. of Technology, South China Univ. of Technology, Chinese Univ. of Hong Kong, South China Univ. of Technology, South China Univ. of Technology, South China Univ. of Technology
(14:50 - 15:10)
Fa Foster Dai
Auburn Univ.
Salvatore Finocchiaro
QORVO, Inc.
Location
151AB
Abstract

This session presents recent advancements in RF and MM-wave frequency multiplication techniques. The session starts with two papers on inductor-less wideband frequency doubler and multiplier designs, followed by two injection-locking frequency tripler and multiplier designs. Lastly, we present an mm-wave frequency tripler with power combining and harmonic shaping techniques.

Technical Papers
Abstract
RMo3B-1: A 0.2–25GHz Inductorless Complementary Pseudo-Push-Push Frequency Doubler
Changwenquan Song, Chen Yu, Liang Wu
Changwenquan Song, Chinese University of Hong Kong - Shenzhen
Chinese University of Hong Kong - Shenzhen, Chinese University of Hong Kong - Shenzhen, Chinese University of Hong Kong - Shenzhen
(13:30 - 13:50)
Abstract
RMo3B-2: A Compact D-Band Multiply-by-9 Frequency Multiplier with Inductor-Less Active Balun in 16nm p-FinFET Technology
Runzhou Chen, Hao-Yu Chien, Mau-Chung Frank Chang
Runzhou Chen, Univ. of California, Los Angeles
Univ. of California, Los Angeles, Univ. of California, Los Angeles, Univ. of California, Los Angeles
(13:50 - 14:10)
Abstract
RMo3B-3: A 17.4-26.4-GHz Dual-Injection Injection-Locked Frequency Tripler Featuring Low Power Consumption and High Harmonic Rejection
Qingfan Zeng, Jingzhi Zhang, Yiming Yu, Huihua Liu, Yunqiu Wu, Chenxi Zhao, Kai Kang
Qingfan Zeng, University of Electronic Science and Technology of
University of Electronic Science and Technology of, Univ. of Electronic Science and Technology of China, Univ. of Electronic Science and Technology of China, Univ. of Electronic Science and Technology of China, Univ. of Electronic Science and Technology of China, Univ. of Electronic Science and Technology of China, Univ. of Electronic Science and Technology of China
(14:10 - 14:30)
Abstract
RMo3B-4: A 278-348 GHz 6th Harmonic Injection Locking Frequency Multiplierbased on 3rd Harmonic Injection Locking Oscillator in 130 nm SiGeProcess
Zheng Yan, Jixin Chen, Zhe Chen, Zekun Li, Rui Zhang, Rui Zhou, Peigen Zhou, Wei Hong
Zheng Yan, Southeast Univ.
Southeast Univ., Southeast Univ., Southeast Univ., Southeast Univ., Southeast Univ., Southeast Univ., Southeast Univ., Southeast Univ.
(14:30 - 14:50)
Abstract
RMo3B-5: A 192–229 GHz Frequency Tripler with 4.4 dBm Output Power Using Slotline-Based Drain Harmonic Shaping Technique in 40nm CMOS
Yifan Ding, Yizhu Shen, Zhen Lin, Zhenghuan Wei, Yun Qian, Sanming Hu
Yifan Ding, Southeast Univ.
Southeast Univ., Southeast Univ., Southeast Univ., Southeast Univ., Southeast Univ., Southeast Univ.
(14:50 - 15:10)
Emanuel Cohen
Technion - Israel Institute of Technology
Hao Gao
Eindhoven Univ. of Technology
Location
152AB
Abstract

This session covers several innovations in the design of components for phase arrays. The first three papers present phase-array receivers achieving high resolution and demonstrating accurate phase-shifter and multibeam capabilities up to the W-band. The last two papers showcase additional crucial components by presenting a high-linearity VGA and a reconfigurable front-end for 5G.

Technical Papers
Abstract
RMo3C-1: A 16-Channel W-band Phased-Array Receiver with a 8-Bit Octant Selector and Reflection-Type Phase Shifter of 0.23°/0.21-dB RMS Phase and Gain Error for ±30° Scanning Angle
Xianhu Luo, Yunbo Rao, Xu Cheng, Hao Yang, Renai Chen, Yang Yu, Jiangan Han, Changxuan Han, Binbin Cheng, Xianjin Deng, Hao Gao
Hao Gao, Technische Univ. Eindhoven
MTRC, China Academy of Engineering Physics,.China, University of Electronic Science and Technology of, MTRC, China Academy of Engineering Physics, China, MTRC, China Academy of Engineering Physics, China, MTRC, China Academy of Engineering Physics, China, MTRC, China Academy of Engineering Physics, China, MTRC, China Academy of Engineering Physics, China, Univ. of Electronic Science and Technology of China, MTRC, China Academy of Engineering Physics, China, MTRC, China Academy of Engineering Physics, China, Technische Univ. Eindhoven
(13:30 - 13:50)
Abstract
RMo3C-2: A K-Band 4-Element 8-Beam Phased-Array Receiver with Hybrid Vector Interpolation and Impedance-Adapted Multibeam Combining Techniques for Satellite Communications
Hang Lu, Nayu Li, Huiyan Gao, Botao Yang, Xuanyu He, Shaogang Wang, Yiwei Liu, Gaopeng Chen, Yen-Cheng Kuan, Xiaokang Qi, Chunyi Song, Qun Jane Gu, Zhiwei Xu
Hang Lu, Zhejiang Univ.
Zhejiang Univ., Donghai Laboratory, Zhejiang Univ., Zhejiang Univ., Zhejiang Univ., Zhejiang Univ., Zhejiang Univ., Zhejiang Univ., National Yang Ming Chiao Tung Univ., Zhejiang Univ., Zhejiang Univ., Univ. of California, Davis, Zhejiang Univ.
(13:50 - 14:10)
Abstract
RMo3C-3: A Frequency Reconfigurable Phased-Array Front-End with Enhanced Image-Rejection and High-Resolution LO Phase Shifter for 5G FR2 n258/n260/n261 Bands
Qin Chen, Jun Lu, Xuhao Jiang, Xuanxuan Yang, Yuchen Liang, Yifei Hu, Yao Wang, Junbo Liu, Lin Lu, Depeng Cheng, Jing Feng, Lei Luo, Long He, Xu Wu, Lianming Li
Qin Chen, Southeast Univ.
Southeast Univ., Southeast Univ., Southeast Univ., Southeast Univ., Southeast Univ., Southeast Univ., Southeast Univ., Southeast Univ., Southeast Univ., Purple Mountain Laboratories, Southeast Univ., Purple Mountain Laboratories, Nanjing, Purple Mountain Laboratories, Nanjing, Southeast Univ., Southeast Univ.
(14:10 - 14:30)
Abstract
RMo3C-4: A 10:1 Bandwidth 2.5-25 GHz Multi-Standard High-Linearity 6-bit Phased-Array Receiver Front-End with Quad-Pole I/Q Network and 2.7° RMS Phase Error
Tian Liang, Zhaoxin Hu, Omar Hassan, Gabriel Rebeiz
Tian Liang, Univ. of California, San Diego
Univ. of California, San Diego, Univ. of California, San Diego, Univ. of California, San Diego, Univ. of California, San Diego
(14:30 - 14:50)
Abstract
RMo3C-5: A 26.5-35 GHz High Linearity VGA with an RMS Phase Error of 0.9o-2.8o Utilizing a Novel Hybrid Coupling Technique in 45RFSOI
Ahmed Afifi, Gabriel Rebeiz
Ahmed Afifi, Univ. of California, San Diego
Univ. of California, San Diego, Univ. of California, San Diego
(14:50 - 15:10)

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Alexdandre Giry
CEA-LETI
Hyun-Chul Park
Samsung Electronics Co., Ltd.
Location
150AB
Abstract

This technical session focuses on addressing the demands of next-generation high-speed communication, high-resolution radar/imaging, and sensing applications, which necessitate high-power (>15dBm) and high-efficiency power amplifiers (PAs) operating at D-band frequencies and above (>100GHz). The session will delve into the design challenges associated with achieving improved output power, efficiency, linearity, and bandwidth in high-performance Silicon-based PAs, utilizing technologies such as SOI CMOS and SiGe. The first paper presents a high Pout and efficient PA operating at 130-151GHz, implemented in 22nm FD-SOI technology. It features a fully differential 8-way power combining network, enhancing Pout, and linearity. The subsequent two papers present advanced architectures and design techniques utilizing 45nm RF-SOI technology: Complex neutralization for source-gate-driven cascode PA and a cascade-stacked PA architecture. The last paper introduces a novel asymmetric slotline-based series-parallel combiner implemented in 130-nm SiGe BiCMOS technology, designing upper frequency bands up to 270GHz.

Technical Papers
Abstract
RMo4A-1: A D-Band Complex Neutralization Cascode Power Amplifier with A Source-Gate Driven Cascode for Enhanced Bandwidth and Efficiency.
Mohamed Eleraky, Hua Wang
Mohamed Eleraky, Swiss Federal Institute of Technology
Swiss Federal Institute of Technology, ETH Zurich
(15:40 - 16:00)
Abstract
RMo4A-2: A D-Band Power Amplifier with Optimized Common-Mode Behaviour Achieving 32Gb/s in 22-nm FD-SOI
Giacomo Venturini, Patrick Reynaert
Giacomo Venturini, KU Leuven
KU Leuven, KU Leuven
(16:00 - 16:20)
Abstract
RMo4A-3: Phased-Array-Compatible Area-Efficient D-Band Power Amplifiers in 45 RF SOI based on Cascade Stacking
Alfred Davidson, Harish Krishnaswamy
Alfred Davidson, Columbia Univ.
Columbia Univ., Columbia Univ.
(16:20 - 16:40)
Abstract
RMo4A-4: A 15.7-dBm 164‒270 GHz Power Amplifier with Asymmetric Slotline-Based Series-Parallel Combiner in 130-nm SiGe BiCMOS Technology
Gunwoo Park, Hyunjoon Kim, Sanggeun Jeon
Gunwoo Park, Korea Univ.
Korea Univ., Korea Univ., Korea Univ.
(16:40 - 17:00)
Andreia Cathelin
STMicroelectronics
Xiang Gao
Zhejiang Univ.
Location
151AB
Abstract

In this session, you will learn about 5 different CMOS Frequency Synthesis solutions that cover a range of frequencies from low GHz to sub-THz. These solutions are particularly relevant for applications such as FMCW radars and the upcoming 5G to 6G communications. The papers proposing these solutions are highly innovative and offer valuable insights.

Technical Papers
Abstract
RMo4B-1: A 45-fsrms-Jitter, 144-to-162-GHz D-Band Frequency Synthesizer Using a Subsampling PLL and a Harmonic-Boosting Frequency Multiplier
Seohee Jung, Jaeho Kim, Jooeun Bang, Jaehyouk Choi
Seohee Jung, Seoul National Univ.
Seoul National Univ., Seoul National Univ., Seoul National Univ., Seoul National Univ.
(15:40 - 16:00)
Abstract
RMo4B-2: A 37.2-fs, -254.6-dB FoM, 47.9-to-56.4 GHz PLL using Tightly Coupled Dual-core VCO with Implicit 4th Harmonic Extraction Technique
Qixiu Wu, Wei Deng, Mengjiao Xiong, Haikun Jia, Ruichen Wan, Hongzhuo Liu, Baoyong Chi
Mengjiao Xiong, Tsinghua Univ.
Tsinghua Univ., Tsinghua Univ., Tsinghua Univ., Tsinghua Univ., Tsinghua Univ., Tsinghua Univ., Tsinghua Univ.
(16:00 - 16:20)
Abstract
RMo4B-3: A 74GHz-80GHz 1.2GHz/µs-Slope 20.9mW FMCW Synthesizer with TDC-Gain-Independent Loop-Bandwidth Employing a TDC-Offset-Free Type-II Digital PLL and a Linearized Hybrid-Tuning DCO
Yi Liu, Zixi Jing, Zhiyu Liu, Chi Chung Yip, Zhirui Zong, Howard Luong
Yi Liu, Hong Kong Univ. of Science and Technology
Hong Kong Univ. of Science and Technology, Hong Kong Univ. of Science and Technology, Hong Kong Univ. of Science and Technology, Hong Kong Univ. of Science and Technology, Hong Kong University of Science and Technology (Guangzhou), Hong Kong Univ. of Science and Technology
(16:20 - 16:40)
Abstract
RMo4B-4: A 4.25GHz-8.45GHz 67%-Chirp-Fractional-Bandwidth -121.5dBc/Hz-PN@1MHz 88fs-Jitter FMCW Synthesizer with Bandwidth-Boosting and Phase-Noise-Cancellation Techniques
Yi Liu, Zixi Jing, Zhiyu Liu, Wen Yang, Chi Chung Yip, Liang Wu, Howard Luong
Yi Liu, Hong Kong Univ. of Science and Technology
Hong Kong Univ. of Science and Technology, Hong Kong Univ. of Science and Technology, Hong Kong Univ. of Science and Technology, Hong Kong Univ. of Science and Technology, Hong Kong Univ. of Science and Technology, Chinese University of Hong Kong - Shenzhen, Hong Kong Univ. of Science and Technology
(16:40 - 17:00)
Abstract
RMo4B-5: A 0.2-to-39.2GHz 66.2-fs Jitter and –71.3dBc Spur Sub-Sampling PLL Using DAC-Based Constant Control Voltage Compensator and Quad-Mode 2nd Harmonic Filtering Oscillator
Wen Chen, Yiyang Shu, Xun Luo
Wen Chen, Univ. of Electronic Science and Technology of China
Univ. of Electronic Science and Technology of China, Univ. of Electronic Science and Technology of China, Univ. of Electronic Science and Technology of China
(17:00 - 17:20)
Ahmed Elkholy
Broadcom Corp.
Sajjad Moazeni
Univ. of Washington
Location
152AB
Abstract

This session will present advanced wireline and localization systems. It includes a very wide bandwidth low distortion TIA for coherent optical communications. The second paper introduces an eye-opening monitor exploiting non-uniform sampling and quantization. The third paper presents a beamforming array with true-time delay for angle of arrival estimation. The last paper demonstrates a frequency-encrypted FMCW LiDAR using an electro-optical synthesizer.

Technical Papers
Abstract
RMo4C-1: Transimpedance Amplifiers with 95 GHz Transimpedance Bandwidth and 1.5% THD for 800G Coherent Optical Communications
Mir Mahmud, Hasan Al-Rubaye, Gabriel Rebeiz
Mir Mahmud, Univ. of California, San Diego
Univ. of California, San Diego, Broadcom, Univ. of California, San Diego
(15:40 - 16:00)
Abstract
RMo4C-2: A 4-26 Gbaud Configurable Multi-Mode Non-Uniform EOM with Improved Twin PI for High-Speed Wireline Communication Achieving 3-μs EW/EH Evaluation and 0.99-R2 Accuracy
Shubin Liu, Zhicheng Dong, Menghao Wang, Xiaoteng Zhao, Chenxi Han, Xianting Su, Zhangming Zhu
Menghao Wang, Xidian Univ.
Xidian Univ., Xidian Univ., Xidian Univ., Xidian Univ., Xidian Univ., Xidian Univ., Xidian Univ.
(16:00 - 16:20)
Abstract
RMo4C-3: RFIC A 10ns Delay Range 1.5GHz BW True-Time-Delay Array-based Passive-Active Signal Combiner with Negative-Cap Stabilized RAMP for Fast Precise Localization
Qiuyan Xu, Chung-Ching Lin, Aditya Wadaskar, Huan Hu, Danijela Cabric, Subhanshu Gupta
Qiuyan Xu, Washington State Univ.
Washington State Univ., Washington State Univ., Univ. of California, Los Angeles, Washington State Univ., Univ. of California, Los Angeles, Washington State Univ.
(16:20 - 16:40)
Abstract
RMo4C-4: An Electro-Optical Synthesizer to Generate Random Chirp Rates for Secure FMCW LiDAR Applications
Marziyeh Rezaei, Liban Hussein, Alana Dee, Sajjad Moazeni
Marziyeh Rezaei, Univ. of Washington
Univ. of Washington, Univ. of Washington, Univ. of Washington, Univ. of Washington
(16:40 - 17:00)

-

Alexandre Siligaris
CEA-LETI
Travis Forbes
Sandia National Laboratories
Location
151AB
Abstract

This session highlights cutting-edge developments in cryogenic circuits and modeling in both CMOS and BiCMOS processes including a multicore VCO for bandwidth extension, a noise cancelling low noise amplifier for low power consumption, and a multi-channel waveform generator for quantum applications. An experimental study on radiation effects on a Ka Band PLL showing phase noise effects is presented.

Technical Papers
Abstract
RTu1B-1: Broadband Noise Characterization of SiGe HBTs Down to 4K
Jad Benserhir, Yating Zou, Yatao PENG, Hung Chi Han, Edoardo Charbon
Jad Benserhir, École Polytechniquecole Polytechnique Fédérale de Lausanne
École Polytechniquecole Polytechnique Fédérale de Lausanne, École Polytechniquecole Polytechnique Fédérale de Lausanne, University of Macau, École Polytechniquecole Polytechnique Fédérale de Lausanne, École Polytechniquecole Polytechnique Fédérale de Lausanne
(08:00 - 08:20)
Abstract
RTu1B-2: A Fully Integrated Three-Channel Cryogenic Microwave SoC for Qubit State Control in 9Be+ Trapped-Ion Quantum Computer operating at 4 K
Peter Toth, Paul Shine-Eugine, Alexander Meyer, Kaoru Yamashita, Sebastian Halama, Markus Duwe, Hiroki Ishikuro, Christian Ospelkaus, Vadim Issakov
Peter Toth, Institute for CMOS Design
Institute for CMOS Design, Institute for CMOS Design, Institute for CMOS Design, Ishikuro Laboratory, Institute of Quantum Optics, Institute of Quantum Optics, Ishikuro Laboratory, Institute of Quantum Optics, Institute for CMOS Design
(08:20 - 08:40)
Abstract
RTu1B-3: A Switchless Dual-core Triple-Mode VCO Achieving 7.1-to-15.7 GHz Frequency Tuning Range and a 202.1 dBc/Hz Peak FoM at 3.7 Kelvin
Yue Wu, Yatao PENG, Benhao Huo, Jun Yin, Rui P. MARTINS, Pui In Mak
Yue Wu, University of Macau
University of Macau, University of Macau, University of Macau, University of Macau, University of Macau, University of Macau
(08:40 - 09:00)
Abstract
RTu1B-4: A 46.7-dB Gain 9.3-K Noise Temperature 5.8-mW Two-Fold Current Reuse Dual Noise-Canceling LNA in 28-nm CMOS for Qubit Readout
Mahesh Kumar Chaubey, Yin-Cheng Chang, Po-Chang Wu, Hann-Huei Tsai, Shawn S. H. Hsu
Mahesh Kumar Chaubey, National Tsing Hua Univ.
National Tsing Hua Univ., Taiwan Semiconductor Research Institute, Taiwan Semiconductor Research Institute, Taiwan Semiconductor Research Institute, National Tsing Hua Univ.
(09:00 - 09:20)
Abstract
RTu1B-5: A Study of Total Dose Radiation Effects in Ka-Band Fractional-N PLLs in 45nm SiGe BiCMOS
David Dolt, Lauren Pelan, Samantha Mcdonnell, Shane Smith, Trevor Dean, David Reents, Will Gouty, Tony Quach, Waleed Khalil, Samuel Palermo
David Dolt, Texas A&M Univ.
Texas A&M Univ., AFRL, AFRL, Ohio State Univ., AFRL, Texas A&M Univ., AFRL, AFRL, Ohio State Univ., Texas A&M Univ.
(09:20 - 09:40)
Xun Luo
Univ. of Electronic Science and Technology of China
Zhiming Deng
MediaTek, Inc.
Location
152AB
Abstract

In this session, advanced digital PA and TX systems for 5G-NR, Wifi-7, and IoT applications are developed. Firstly, a 16-nm FinFet watt-level WiFi-7 all-digital polar TX using switched capacitor digital PA is introduced. Secondly, a SAW-less RF transmitter based on N-path switched-capacitor modulator is proposed for 5G-NR CIM3 cancellation. Thirdly, a high power quadrature complex domain Doherty PA using switched constant-current and symmetrical transformer is developed for deep PBO efficiency enhancement. Fourthly, A 5G FR2 n260/n259 phased-array transmitter front-end IC in 28-nm CMOS FD-SOI is discussed. Finally, a sub-2.4GHz transceiver with reused matching network and duty-cycle controlled Class-E PA for medical band is proposed.

Technical Papers
Abstract
RTu1C-1: A Watt level, 5-7GHz all digital polar TX based on 3.3V switched capacitor digital PA in 16nm Fin-FET for Wi-Fi7 applications
Naor Shay, Elad Solomon, Limor Zohar, Assaf Ben-Bassat, Eran Socher, Ofir Degani
Naor Shay, Tel-Aviv Univ.
Tel-Aviv Univ., Intel Corp., Intel Corp., Intel Corp., Tel-Aviv Univ., Tel-Aviv Univ.
(08:00 - 08:20)
Abstract
RTu1C-2: A SAW-less 3FLO-Suppression RF Transmitter with a Transformer-Based N-Path Switched-Capacitor Modulator Achieving -157.6dBc/Hz Output Noise and -61dBc CIM3
Gengzhen Qi, Haonan Guo, Pui-In Mak
Haonan Guo, Sun Yat-sen Univ.
Sun Yat-sen Univ., Sun Yat-sen Univ., University of Macau
(08:20 - 08:40)
Abstract
RTu1C-3: A 32.3dBm Quadrature Complex Domain Doherty Power Amplifier Based on Switched Constant-Current and Symmetrical Transformer Achieving 21.6% Average Power-Added Efficiency
Tao Wang, Lingyun Shi, Di Hua, Peng Cao, Jiawei Xu, Zhiliang Hong
Tao Wang, Fudan Univ.
Fudan Univ., Fudan Univ., Fudan Univ., Fudan Univ., Fudan Univ., Fudan Univ.
(08:40 - 09:00)
Abstract
RTu1C-4: A 5G FR2 n260/n259 Phased-Array Transmitter Front-End IC in 28-nm CMOS FD-SOI with 3-Stack Power Amplifier Employing OPA-Based Bias Scheme and Cross-Tied Inductor Topology
Jongwon Yun, Hongkie Lim, Jaeyeon Jeong, Iljin Lee, Doyoon Kim, Kyunghwan Kim, Hanwoong Choi, Geonho Park, Goeun Baek, Eun-Taek Sung, Ajaypat Jain, Foad Malekzadeh, Venumadhav Bhagavatula, Ivan Lu, Sangwon Son, Hyun-Chul Park, Joonhoi Hur, Sangmin Yoo
Jongwon Yun, Samsung Electronics, S.LSI
Samsung Electronics, S.LSI, Samsung Electronics, S.LSI, Samsung Electronics, S.LSI, Samsung Electronics, S.LSI, Samsung Electronics, S.LSI, Samsung Electronics, S.LSI, Samsung Electronics, S.LSI, Samsung Electronics, S.LSI, Samsung Electronics, S.LSI, Samsung Electronics, S.LSI, Samsung Semiconductor, Inc., Samsung Electronics, S.LSI, Samsung Electronics, S.LSI, Samsung Electronics, S.LSI, Samsung Electronics, S.LSI, Samsung Electronics Co., Ltd., Samsung Electronics, S.LSI, Samsung Electronics, S.LSI
(09:00 - 09:20)
Abstract
RTu1C-5: A 0.48mm2 Sub-2.4GHz Transceiver with Reused Matching Network and Duty-Cycle Controlled Class-E PA for Medical Band
Heng Huang, Xiliang Liu, Zijian Tang, Wei Song, Yuan Ma, Yuwei Zhang, Xiaoyan Ma, Milin Zhang, Jintao Wang, Kai Lu, Zhihua Wang, Guolin Li
Milin Zhang, Tsinghua Univ.
National Univ. of Defense Technology, Beijing Ningju Technology Ltd, Tsinghua Univ., Tsinghua Univ., Tsinghua Univ., Beijing Ningju Technology Ltd, Beijing Ningju Technology Ltd, Tsinghua Univ., Tsinghua Univ., National Univ. of Defense Technology, Tsinghua Univ., Tsinghua Univ.
(09:20 - 09:40)

-

Minoru Fujishima
Hiroshima Univ.
Shahriar Shahramian
Bell Labs
Location
151AB
Abstract

This session will showcase cutting-edge innovations in silicon technology for wireless applications in D-band and beyond: system-in-package for 112.64Gb/s channel aggregation; 210-250GHz with integrated bow-tie antenna sliding-IF transceivers, dual ultra-wideband receivers, and scalable 128-channel phased arrays for dual-polarization MIMO communications are among the highlights.

Technical Papers
Abstract
RTu2B-1: A 210-to-250 GHz Sliding-IF Frequency-interleaved Transceiver with On-chip Bow-tie Antenna and 4th-order FIR-embedded Digital Modulator
Linjun Gu, Wei Deng, Junlong Gong, Taikun Ma, Haikun Jia, Qixiu Wu, Jiamin Xue, Dongfang Li, Hongzhuo Liu, Yaqian Sun, Baoyong Chi
Linjun Gu, Tsinghua Univ.
Tsinghua Univ., Tsinghua Univ., Tsinghua Univ., Tsinghua Univ., Tsinghua Univ., Tsinghua Univ., Tsinghua Univ., Tsinghua Univ., Tsinghua Univ., Tsinghua Univ., Tsinghua Univ.
(10:10 - 10:30)
Abstract
RTu2B-2: A 2x40 Gb/s Ultra-Wideband 131-173 GHz Dual Receiver for Point-to-Point Communication Systems with NF of 5.7 dB in RFSOI
Ahmed Afifi, Amr Ahmed, Gabriel Rebeiz
Ahmed Afifi, Univ. of California, San Diego
Univ. of California, San Diego, Univ. of California, San Diego, Univ. of California, San Diego
(10:30 - 10:50)
Abstract
RTu2B-3: A 112.64-Gb/s CMOS D-band Channel-Aggregation RX System-in-Package
Abdelaziz Hamani, José Luis GONZALEZ JIMENEZ, Alexandre SILIGARIS, Francesco Foglia Manzillo, Cedric DEHOS, Jean-Baptiste DAVID, Nicolas CASSIAU, Antonio CLEMENTE
Abdelaziz Hamani, Univ of Grenoble-Alpes France
Univ of Grenoble-Alpes France, Univ. Grenoble Alpes - CEA, LETI, CEA-LETI, CEA, Univ. Grenoble Alpes - CEA, LETI, Univ. Grenoble Alpes - CEA, LETI, Univ. Grenoble Alpes - CEA, LETI, Univ. Grenoble Alpes - CEA, LETI
(10:50 - 11:10)
Abstract
RTu2B-4: A D-Band Scalable 128-Channel Dual-Polarized Receive Phased-Array with On-Chip Down Converters for 2x2 MIMO Achieving 2x42 Gbps
Minjae Jung, Linjie Li, Amr Ahmed, Omar Hassan, Gabriel Rebeiz
Minjae Jung, Univ. of California, San Diego
Univ. of California, San Diego, Univ. of California, San Diego, Univ. of California, San Diego, Univ. of California, San Diego, Univ. of California, San Diego
(11:10 - 11:30)
Tolga Dinc
Texas Instruments
Aritra Banerjee
Univ. of Illinois at Chicago
Location
152AB
Abstract

This session covers PA developments in 2-40 GHz range for Satcom and other applications in CMOS, SiGe and GaN. The first paper presents a Q-band PA utilizing edge coupled-line impedance inverting balun. The next two papers cover Ku-band PAs in CMOS and SiGe with transformer area reduction techniques. The fourth paper presents an analog predistortion linearizer for a K-Band PA. The final paper demonstrates a wideband 2-18 GHz GaN reconfigurable nonuniform distributed PA.

Technical Papers
Abstract
RTu2C-1: An Efficient, High Power Q-Band SiGe HBT Power Amplifier With A Compact Four-Way Wilkinson Power Combiner Balun for Emerging Very Low-Earth-Orbit SATCOM
Hanjung Lee, Insu Han, Jae Hyeon Hwang, Inchan Ju
Hanjung Lee, Ajou Univ.
Ajou Univ., Ajou Univ., Ajou Univ., Ajou Univ.
(10:10 - 10:30)
Abstract
RTu2C-2: A Compact, Highly Linear Ku-Band SiGe HBT Power Amplifier Using Shared Single Center-Tap Four-Way Output Transformer Balun for Emerging Low Earth Orbit SATCOM Phased-Array Transmitter
Byeongcheol Yoon, Insu Han, Junghyun Kim, Inchan Ju
Byeongcheol Yoon, Hanyang Univ.
Hanyang Univ., Ajou Univ., Hanyang Univ., Ajou Univ.
(10:30 - 10:50)
Abstract
RTu2C-3: An Efficient Ku-Band Two-Way Vertical-like Power-Combining Power Amplifier using Merged Inter-stage Transformers Achieving 23-23.4 dBm Psat and 45.2-46.6% Peak PAE in 65nm CMOS
Joon-Hyung Kim, Jeong-Taek Lim, Jae-Eun Lee, Jae-Hyeok Song, Jeong-Taek Son, Min-Seok Baek, Eun-Gyu Lee, Sunkyu Choi, Han-Woong Choi, Seong-Mo Moon, Dongpil Chang, Choul-Young Kim
Joon-Hyung Kim, Chungnam National Univ.
Chungnam National Univ., Chungnam National Univ., Chungnam National Univ., Chungnam National Univ., Chungnam National Univ., Chungnam National Univ., Chungnam National Univ., Chungnam National Univ., Chungnam National Univ., ETRI, ETRI, Chungnam National Univ.
(10:50 - 11:10)
Abstract
RTu2C-4: A K-Band CMOS Power Amplifier using an Analog Predistortion Linearizer with 22.1 dBm Psat and 0.9° AM-PM Distortion
Junhan Lim, Wonseob Lee, Seong-Mo Moon, Euijin Oh, Seunghun Wang, Dongpil Chang, Jinseok Park
Wonseob Lee, Chonnam National Univ.
Electronics and Telecommunications Research Institute, Chonnam National Univ., Electronics and Telecommunications Research Institute, Chonnam National Univ., Electronics and Telecommunications Research Institute, Electronics and Telecommunications Research Institute, Chonnam National Univ.
(11:10 - 11:30)
Abstract
RTu2C-5: A 2-18 GHz Frequency Reconfigurable Nonuniform Distributed Power Amplifier with 13.3W Average Power and 39% Average Efficiency
Shu Ma, Xinyan Li, Ze Yu, Dexin Shi, Xiaochen Tang, Yong Wang
Xinyan Li, Univ. of Electronic Science and Technology of China
Univ. of Electronic Science and Technology of China, Univ. of Electronic Science and Technology of China, Univ. of Electronic Science and Technology of China, Univ. of Electronic Science and Technology of China, Univ. of Electronic Science and Technology of China, Univ. of Electronic Science and Technology of China
(11:30 - 11:50)

-

Tong Zhang
Google
Hsieh-Hung Hsieh
Taiwan Semiconductor Manufacturing Co., Ltd.
Location
151AB
Abstract

With the emerging RF applications of 5G and beyond 5G (B5G), it is desired to enable silicon-based RF frontend circuits for low-cost and high-level integration. In this session, RF frontend circuits including low-noise amplifiers and mixers in CMOS and SOI technologies are presented. The design techniques for wideband or multi-band operations are discussed and demonstrated, as well as the performance enhancement in terms of DC power reduction and noise minimization.

Technical Papers
Abstract
RTu3B-1: A 4.4-mW 19–46-GHz Low-Noise Amplifier with Pole-Converging Gain Flattening and Triple-Resonance Input Matching
Jiahan Fu, Changwenquan Song, Yihui Wang, Liang Wu
Jiahan Fu, Chinese University of Hong Kong - Shenzhen
Chinese University of Hong Kong - Shenzhen, Chinese University of Hong Kong - Shenzhen, Chinese University of Hong Kong - Shenzhen, Chinese University of Hong Kong - Shenzhen
(13:30 - 13:50)
Abstract
RTu3B-2: A Compact 28/39 GHz Dual-Band Concurrent/Band-Switching LNA for 5G Multi-Band Multi-Stream Applications
Depeng Cheng, Qin Chen, Jing Feng, Xin Chen, Xujun Ma, Lianming Li
Depeng Cheng, Purple Mountain Laboratories
Purple Mountain Laboratories, Southeast Univ., Southeast Univ., Southeast Univ., Télécom SudParis, Institut Polytechnique de Paris, Southeast Univ.
(13:50 - 14:10)
Abstract
RTu3B-3: A High-Gain D-Band LNA with Compact Gm-Boosting Core Based on Slow-Wave Feedback Achieving 6.1 dB NF in 40 nm CMOS
Yun Qian, Xinge Huang, Yizhu Shen, Yifan Ding, Zhenghuan Wei, Qunfei Han, Sanming Hu
Yun Qian, Southeast Univ.
Southeast Univ., Southeast Univ., Southeast Univ., Southeast Univ., Southeast Univ., Southeast Univ., Southeast Univ.
(14:10 - 14:30)
Abstract
RTu3B-4: A Multi-Band and High-IRR Down-Conversion Mixer for 5G NR FR2 Using Compact Transformer-Based Mutual-Image-Rejection Filter
Haipeng Duan, Qin Chen, Xu Wu, Dongming Wang, Lianming Li, Xiaohu You
Haipeng Duan, Southeast Univ.
Southeast Univ., Southeast Univ., National Mobile Communications Research Laboratory, National Mobile Communications Research Laboratory, National Mobile Communications Research Laboratory, National Mobile Communications Research Laboratory
(14:30 - 14:50)
Abstract
RTu3B-5: A Compact Ultra-High-Linearity 7-to-20 GHz Passive Mixer Achieving up to 37 dBm IIP3 and 25.1 dBm IP1dB in 45nm CMOS SOI
Omar Hassan, Amr Ahmed, Gabriel Rebeiz
Omar Hassan, Univ. of California, San Diego
Univ. of California, San Diego, Univ. of California, San Diego, Univ. of California, San Diego
(14:50 - 15:10)
Vadim Issakov
Technische Univ. Braunschweig
Mona Hella
Rensselaer Polytechnic Institute
Location
152AB
Abstract

This session presents the latest development in D-band and THz transmitters. The first two papers present THz transmitters. The next three papers present D/F-Band transmitters all in CMOS technology with competitive data rates.

Technical Papers
Abstract
RTu3C-1: A 360 GHz Single-element Multi-mode Orbital Angular Momentum Cavity Antenna-based Transmitter in 90nm SiGe BiCMOS
Wei Sun, Sidharth Thomas, Aydin Babakhani
Wei Sun, Univ. of California, Los Angeles
Univ. of California, Los Angeles, Univ. of California, Los Angeles, UCLA
(13:30 - 13:50)
Abstract
RTu3C-2: A 300-GHz-Band 40-Gb/s 2D Phased-Array CMOS Transmitter with Near-Half-Wave Antenna Pitch
Kyoya Takano, Shun Beppu, Hayato Yagi, Yoshiki Sugimoto, Kunio Sakakibara, Shinsuke Hara, Mohamed Mubarak, Akifumi Kasamatsu, Shunichi Kubo, Kosuke Katayama, Satoshi Tanaka, Takeshi Yoshida, Shuhei Amakawa, Minoru Fujishima
Kyoya Takano, Tokyo University of Science
Tokyo University of Science, Tokyo University of Science, Tokyo University of Science, Nagoya Institute of Technology, Nagoya Institute of Technology, National Institute of Information and Communications Technology, National Institute of Information and Communications Technology, National Institute of Information and Communications Technology, THine Electronics, Inc., National Institute of Technology, Tokuyama College, Hiroshima Univ., Hiroshima Univ., Hiroshima Univ., Hiroshima Univ.
(13:50 - 14:10)
Abstract
RTu3C-3: A 110-to-170-GHz OOK Transmitter with 40-Gb/s Data Rate and 40-dB On-Off Ratio in 28-nm CMOS
Chun Yang, Dawei Tang, Peigen Zhou, Zhe Chen, Jixin Chen, Wei Hong
Chun Yang, Southeast Univ.
Southeast Univ., Southeast Univ., Southeast Univ., Southeast Univ., Southeast Univ., Southeast Univ.
(14:10 - 14:30)
Abstract
RTu3C-4: A CMOS Fully Integrated 120-Gbps RF-64QAM F-band Transmitter with an On-Chip Antenna for 6G Wireless Communication
Zisong Wang, Huan Wang, Youssef Hassan, Payam Heydari
Zisong Wang, Univ. of California, Irvine
Univ. of California, Irvine, Qualcomm Technologies, Inc., Univ. of California, Irvine, Univ. of California, Irvine
(14:30 - 14:50)
Abstract
RTu3C-5: A 56Gb/s Zero-IF D-Band Transmitter for a Beamformer in 22nm FD-SOI
Yang Zhang, Kristof Vaesen, Giovanni Mangraviti, Sehoon Park, Zhiwei Zong, Piet Wambacq, Giuseppe GRAMEGNA
Yang Zhang, IMEC
IMEC, IMEC, IMEC, IMEC, IMEC, IMEC, IMEC
(14:50 - 15:10)

-

Raja Pullela
MaxLinear, Inc.
Vito Giannini
UHNDER Inc
Location
151AB
Abstract

This session explores innovative circuit techniques and system applications at mm-wave and higher frequencies. The first paper discusses circuit techniques aimed at achieving wide-band performance in FMCW radars. The second paper outlines a circuit technique that achieves outstanding on/off modulation ratio in a 200G radar transmitter. The subsequent paper describes a radiometer that achieves the highest-frequency radiometer in an integrated silicon-based solution at 280GHz. The session concludes with a DAC-based cancellation scheme to attenuate spillover in radars utilized in automotive applications.

Technical Papers
Abstract
RTu4B-1: A 90-98-GHz FMCW Radar Transceiver Supporting Broadband Modulation in 65nm CMOS
Shengjie Wang, Jiangbo Chen, Jiabing Liu, quanyong li, Qizhou Yang, Xiaopeng Yu, Chunyi Song, Jane Gu, Zhiwei Xu
Shengjie Wang, Zhejiang Univ.
Zhejiang Univ., Zhejiang Univ., Zhejiang Univ., Zhejiang Univ., Zhejiang Univ., Zhejiang Univ., Zhejiang Univ., Univ. of California, Davis, Zhejiang Univ.
(15:40 - 16:00)
Abstract
RTu4B-2: A 200-GHz Modulable Transceiver With 35-dB TX ON/OFF Isolation and 16Gb/s Code Rate for MIMO Radar in 130nm SiGe Process
Rui Zhou, Jixin Chen, Siyuan Tang, ZeKun Li, Dawei Tang, Peigen Zhou, Feng Xie, Zhe Chen, Wei Hong
Rui Zhou, Southeast Univ.
Southeast Univ., Southeast Univ., Southeast Univ., Southeast Univ., Southeast Univ., Southeast Univ., Southeast Univ., Southeast Univ., Southeast Univ.
(16:00 - 16:20)
Abstract
RTu4B-3: An On-Chip Antenna-Coupled Preamplified D-Band to J-Band Total Power Radiometer Chip in 130 nm SiGe BiCMOS Technology
Janusz Grzyb, Marcel Andree, Holger Rücker, Ullrich Pfeiffer
Marcel Andree, Univ. of Wuppertal
Univ. of Wuppertal, Univ. of Wuppertal, IHP GmbH, Univ. of Wuppertal
(16:20 - 16:40)
Abstract
RTu4B-4: An E-Band FMCW Radar Receiver Achieving 38dB Cancellation for Arbitrary-Path Spillover Up to -10dBm and 5.7dB NF in 65nm CMOS
Bolin Chen, Zhirui Zong
Bolin Chen, Hong Kong University of Science and Technology (Guangzhou)
Hong Kong University of Science and Technology (Guangzhou), Hong Kong University of Science and Technology (Guangzhou)
(16:40 - 17:00)
Teerachot Siriburanon
Univ. College Dublin
Rocco Tam
NXP Semiconductors
Location
152AB
Abstract

This session presents circuit building blocks operating in the 100 - 200 GHz frequency range. The first paper proposes a high output power, energy-efficient Gilbert-cell-based frequency doubler with 25% duty cycle technique using 55nm BiCMOS. The second paper presents a 120GHz passive subharmonic mixer with multiphase LO distribution in 28nm CMOS. The third paper proposes a wideband 200GHz LNA which leverages the use of an active balun input stage in 16nm FinFET. The session ends with a D-band bidirectional common-gate amplifier with current-reuse technique in 45nm RFSOI.

Technical Papers
Abstract
RTu4C-1: 110 - 170 GHz 25% Duty-cycle Gilbert-cell Frequency Doubler with 6.5 dBm Peak Output Power in BiCMOS 55 nm Technology
Lorenzo Piotto, Guglielmo De Filippi, Andrea Mazzanti
Lorenzo Piotto, Univ. of Pavia
Univ. of Pavia, Univ. of Pavia, Univ. of Pavia
(15:40 - 16:00)
Abstract
RTu4C-2: A Low Conversion Loss 120 GHz Passive IQ Down-ConversionSubharmonic Mixer with Multiphase LO Distribution in 28 nm CMOS
Sarah Koop-Brinkmann, Victor Lasserre, Michele Caruso, Daniele Dal Maistro, Giovanni Volpato, Christian Ziegler, Finn Stapelfeldt, Vadim Issakov
Sarah Koop-Brinkmann, Technische Univ. Braunschweig
Technische Univ. Braunschweig, Technische Univ. Braunschweig, Infineon Technologies Austria AG, Infineon Technologies Austria Ag, Infineon Technologies Austria Ag, Technische Univ. Braunschweig, Technische Univ. Braunschweig, Technische Univ. Braunschweig
(16:00 - 16:20)
Abstract
RTu4C-3: A 200 GHz Wideband and Compact Differential LNA Leveraging an Active Balun Input Stage in 16nm FinFET Technology
Ethan Chou, Nima Baniasadi, Ali Niknejad
Ethan Chou, Univ. of California, Berkeley
Univ. of California, Berkeley, Apple, Inc., Univ. of California, Berkeley
(16:20 - 16:40)
Abstract
RTu4C-4: A D-band Bi-directional Current-Reuse Common-Gate Amplifier in 45nm RFSOI
Syed Mohammad Ashab Uddin, Liwen Zhong, Wooram Lee
Syed Mohammad Ashab Uddin, Pennsylvania State Univ.
Pennsylvania State Univ., Pennsylvania State Univ., Pennsylvania State Univ.
(16:40 - 17:00)