Technical Sessions
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23ABC
Abstract
This session presents the latest advances in state-of-the-art optical receivers, dielectric waveguide links, and high-speed converters.
Technical Papers
Abstract
RMo1A-1: A 112-Gbps, 0.73-pJ/Bit Fully-Integrated O-Band I-Q Optical Receiver in a 45-nm CMOS SOI-Photonic Process
(08:00 - 08:20)
Abstract
RMo1A-3: A 100-Gb/s 3-m Dual-Band PAM-4 Dielectric Waveguide Link with 1.9 pJ/Bit/m Efficiency in 28-nm CMOS
(08:40 - 09:00)
Abstract
RMo1A-4: A 12-Bit 1.1GS/s Single-Channel Pipelined-SAR ADC with Adaptive Inter-Stage Redundancy
(09:00 - 09:20)
24ABC
Abstract
This session discusses state-of-the-art silicon-based front-ends and building blocks from sub-6GHz to sub-mm-wave frequency range.
Technical Papers
Abstract
RMo1B-1: A 65nm CMOS Current-Mode Receiver Frontend with Frequency-Translational Noise Cancelation and 425MHz IF Bandwidth
(08:00 - 08:20)
Abstract
RMo1B-2: IIP2-Enhanced Receiver Front-End with Notch-Filtered Low-Noise Transconductance Amplifier for 5G New Radio Cellular Applications
(08:20 - 08:40)
Abstract
RMo1B-3: A Band-Shifting Millimeter-Wave T/R Front-End with Enhanced Imaging and Interference Rejection Covering 5G NR FR2 n257/n258/n259/n260/n261 Bands
(08:40 - 09:00)
Abstract
RMo1B-5: A 300–320GHz Sliding-IF I/Q Receiver Front-End in 130nm SiGe Technology
(09:20 - 09:40)
25ABC
Abstract
This session presents four transceivers and beamforming RFICs for 5G and mm-wave applications. The first paper is a V-Band 4-channel transmitter beamformer in 28nm CMOS with an OP1dB of 10.8dBm. The second paper is a dual-band 28/37GHz reconfigurable beamforming RFIC in 28nm FDSOI. The third paper is a 4×2 2D Butler matrix switched-beam chipset for 5G application in 28nm CMOS and the final paper is a phased array receiver front-end in 28nm FDSOI with a NF of
Technical Papers
Abstract
RMo1C-1: A V-Band Four-Channel Phased Array Transmitter Beamforming IC with 0.7-Degree Phase Step in 20dB Dynamic Range
(08:00 - 08:20)
Abstract
RMo1C-2: A 28/37GHz Frequency Reconfigurable Dual-Band Beamforming Front-End IC for 5G NR
(08:20 - 08:40)
Abstract
RMo1C-3: A 26.5-GHz 4×2 Array Switched Beam-Former Based on 2-D Butler Matrix for 5G Mobile Applications in 28-nm CMOS
(08:40 - 09:00)
Abstract
RMo1C-4: A Phased-Array Receiver Front-End Using a Compact High Off-Impedance T/R Switch for n257/n258/n261 5G FR2 Cellular
(09:00 - 09:20)
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23ABC
Abstract
In this session, GaN FET modeling using artificial neural network as well a paper comparing various industry GaN models will be covered. A new T-gate RFSOI device method is explored for improved LNA device. Finally, layout tradeoffs using ALIGN software tool will be presented.
Technical Papers
Abstract
RMo2A-2: Optimizing RFSOI Performance Through a T-Shaped Gate and Nano-Second Laser Annealing Techniques
(10:30 - 10:50)
Abstract
RMo2A-4: Artificial Neural Networks for GaN HEMT Model Extraction in D-Band Using Sparse Data
(10:50 - 11:10)
Abstract
RMo2A-5: Benchmarking Measurement-Based Large-Signal FET Models for GaN HEMT Devices
(11:10 - 11:30)
24ABC
Abstract
This session discusses state-of-the-art III-V front-ends and building-blocks including GaN wideband switches and front-end modules along with a InP sub-mm-wave receiver.
Technical Papers
Abstract
RMo2B-1: A DC-to-12GHz 1.4–2.5dB IL 4×8 Switch Matrix with Three-Port Reconfigurable Inter-Stage Matching Network
(10:10 - 10:30)
Abstract
RMo2B-2: A DC-to-18GHz High Power and Low Loss Band-Divided SP3T Switch with Reconfigurable Pole-to-Throw Network in 0.25-µm GaN
(10:30 - 10:50)
Abstract
RMo2B-3: A 4.8–6.4-GHz GaN MMIC Front-End Module with Enhanced Back-Off Efficiency and Compact Size
(10:50 - 11:10)
25ABC
Abstract
This session covers RF and mm-wave systems that span applications in space technology, D-band communications, all the way to biomedical implants. The session starts with an invited paper from NASA JPL on CMOS-based mm-wave spectrometer for performing scientific studies in space. The second paper covers scalable wafer-scale TX/RX phased array at 140GHz, while the third paper presents a baseband to D-band transmit module. The session wraps with an innovative millimeter-sized implantable glucose sensor using a fluorescent hydrogel.
Technical Papers
Abstract
RMo2C-1: A CMOS 183GHz Millimeter-Wave Spectrometer for Exploring the Origins of Water and Evolution of the Solar System
(10:10 - 10:30)
Abstract
RMo2C-2: A 140GHz Scalable On-Grid 8×8-Element Transmit-Receive Phased-Array with Up/Down Converters and 64QAM/24Gbps Data Rates
(10:30 - 10:50)
Abstract
RMo2C-3: A 57.6Gb/s Wireless Link Based on 26.4dBm EIRP D-Band Transmitter Module and a Channel Bonding Chipset on CMOS 45nm
(10:50 - 11:10)
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23ABC
Abstract
The session focus is on reference clock and Phase-Locked Loop (PLL) design techniques for RF and mm-wave applications, starting with the introduction of a novel current-reuse coupled mixer phase detector, followed by design techniques for radiation hardened PLLs, then a fast-startup reference oscillator based on phase-aligned clock is introduced, and to conclude, a transformer-coupled BAW oscillator with very low jitter is presented.
Technical Papers
Abstract
RMo3A-1: A 14.2mW 29–39.3-GHz Two-Stage PLL with a Current-Reuse Coupled Mixer Phase Detector
(13:30 - 13:50)
Abstract
RMo3A-2: A Radiation-Hardened by Design 15–22GHz LC-VCO Charge-Pump PLL Achieving -240dB FoM in 22nm FinFET
(13:50 - 14:10)
Abstract
RMo3A-3: A Fast-Startup 80MHz Crystal Oscillator with 96×/368× Startup-Time Reductions for 3.0V/1.2V Swings Based on Un-Interrupted Phase-Aligned Injection
(14:10 - 14:30)
Abstract
RMo3A-4: Transformer-Coupled 2.5GHz BAW Oscillator with 12.5fs RMS-Jitter and 1-kHz Figure-of-Merit (FOM) of 210dB
(14:30 - 14:50)
24ABC
Abstract
This session discusses state-of-the-art silicon-based mm-wave reconfigurable/wideband and sub-mm-wave gain-boosted/wideband low-noise amplifiers (LNAs).
Technical Papers
Abstract
RMo3B-1: A mm-Wave Wideband/Reconfigurable LNA Using a 3-Winding Transformer Load in 22-nm CMOS FDSOI
(13:30 - 13:50)
Abstract
RMo3B-2: High-Performance Broadband CMOS Low-Noise Amplifier with a Three-Winding Transformer for Broadband Matching
(13:50 - 14:10)
Abstract
RMo3B-3: A 28-GHz 12-dBm IIP3 Low-Noise Amplifier Using Source-Sensed Derivative Superposition of Cascode for Full-Duplex Receivers
(14:10 - 14:30)
Abstract
RMo3B-4: A SiGe BiCMOS D-Band LNA with Gain Boosted by Local Feedback in Common-Emitter Transistors
(14:30 - 14:50)
Abstract
RMo3B-5: A D-Band to J-Band Low-Noise Amplifier with High Gain-Bandwidth Product in an Advanced 130nm SiGe BiCMOS Technology
(14:50 - 15:10)
25ABC
Abstract
The session presents high-performance systems and circuits operating above 140GHz. A 140GHz OOK transceiver shows 26Gb/s data-rate in 28nm CMOS and a 400GHz system presents a multi-Gb/s link using PIN diodes in 90nm SiGe. A gain-boosted amplifier achieves high gain per stage at 190GHz in 65nm CMOS and a multiplier/amplifier chain transmitter demonstrates high output power and efficiency at 320GHz in 130nm SiGe.
Technical Papers
Abstract
RMo3C-1: A 0.32-THz 6.6-dBm Single-Chain CW Transmitter Using On-Chip Antenna with 2.65% DC-to-THz Efficiency
(13:30 - 13:50)
Abstract
RMo3C-2: A 26-Gb/s 140-GHz OOK CMOS Transmitter and Receiver Chipset for High-Speed Proximity Wireless Communication
(13:50 - 14:10)
Abstract
RMo3C-3: A 189GHz Three-Stage Super-Gain-Boosted Amplifier with Power Gain of 10.7dB/Stage at Near-fmax Frequencies in 65nm CMOS
(14:10 - 14:30)
Abstract
RMo3C-4: A Fully Integrated 400GHz OOK Transceiver with On-Chip Antenna in 90nm SiGe BiCMOS for Multi Gbps Wireless Communication
(14:30 - 14:50)
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23ABC
Abstract
This session presents recent advances in CMOS frequency multiplication techniques for mm-wave applications. The first two papers discuss circuit solutions to improve the power efficiency of mm-wave frequency doublers. The last two papers present techniques for harmonics rejection applied to a tripler and a quadrupler for E- and W-band applications.
Technical Papers
Abstract
RMo4A-1: A Double Balanced Frequency Doubler Achieving 70% Drain Efficiency and 25% Total Efficiency
(15:40 - 16:00)
Abstract
RMo4A-2: A 47GHz to 70GHz Frequency Doubler Exploiting 2nd-Harmonic Feedback with 10.1dBm Psat and ηtotal of 22% in 65nm CMOS
(16:00 - 16:20)
Abstract
RMo4A-3: A 91.9–113.2GHz Compact Frequency Tripler with 44.6dBc Peak Fundamental Harmonic-Rejection-Ratio Using Embedded Notch-Filters and Area-Efficient Matching Network in 65nm CMOS
(16:20 - 16:40)
Abstract
RMo4A-4: A Compact 70–86GHz Bandwidth Frequency Quadrupler with Transformer-Based Harmonic Reflectors in 28nm CMOS
(16:40 - 17:00)
24ABC
Abstract
Techniques in this session represent advances in wireless connectivity for NB-IoT and WiFi radios. For NB-IoT radios, advances in the state-of-the-art are presented with a sub-mm-wave receiver. For WiFi radios, this session presents a multi-beam phased array receiver in C-Band, a tri-band transceiver supporting 4096-QAM modulation, and a transmitter utilizing a 2-duty cycle harmonic rejection mixer for C-IMD3 linearization while consuming only 20mW of power.
Technical Papers
Abstract
RMo4B-2: A C-Band Compact High-Linearity Multibeam Phased-Array Receiver with Merged Gain-Programmable Phase Shifter Technique
(16:00 - 16:20)
Abstract
RMo4B-3: A Wi-Fi Tri-Band Switchable Transceiver with 57.9fs-RMS-Jitter Frequency Synthesizer, Achieving -42.6dB EVM Floor for EHT320 4096-QAM MCS13 Signal
(16:20 - 16:40)
25ABC
Abstract
This session will present four power amplifiers for the 5G mm-wave frequency range. The first two papers improve the bandwidth of the Doherty operation by using novel power-combining techniques. The first paper, implemented in 45nm SOI, implements a role-exchange of different main and auxiliary PAs over frequency. The second paper, implemented in 40nm CMOS, synthesizes a broadband Doherty combining network. The third paper in the session highlights the layout challenges for output combiners and presents 256-QAM measurements in 65nm SOI. The last paper achieves very low AM-PM by utilizing varactors and second harmonic traps in 40nm CMOS.
Technical Papers
Abstract
RMo4C-1: A 26–40GHz 4-Way Hybrid Parallel-Series Role-Exchange Doherty PA with Broadband Deep Power Back-Off Efficiency Enhancement
(15:40 - 16:00)
Abstract
RMo4C-2: A 26GHz Balun-First Three-Way Doherty PA in 40nm CMOS with 20.7dBm Psat and 20dB Power Gain
(16:00 - 16:20)
Abstract
RMo4C-3: A 26-GHz Linear Power Amplifier with 20.8-dBm OP1dB Supporting 256-QAM Wideband 5G NR OFDM for 5G Base Station Equipment
(16:20 - 16:40)
Abstract
RMo4C-4: A 23–30GHz 4-Path Series-Parallel-Combined Class-AB Power Amplifier with 23dBm Psat, 38.5% Peak PAE and 1.3° AM-PM Distortion in 40nm Bulk CMOS
(16:40 - 17:00)
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23ABC
Abstract
This session presents LO generation solutions spanning from RF to THz frequencies, implemented in a wide diversity of silicon technologies. The first paper demonstrates a 15.6GHz multi-core VCO in 8nm FinFET achieving excellent phase noise and wide tuning range. The second paper presents a 10.8–14.5GHz 8-Phase LO Generator with Automatic Phase-and-Duty-Cycle Calibration for N-path receivers in 28nm CMOS. The third paper brings in a high fundamental rejection inductor-less frequency-doubler, operating from 2 to 20GHz in 45nm RF-SOI CMOS. The last paper discusses a 0.4THz single-element radiator in 90nm SiGe BiCMOS, based on integrated PIN diode excitation at 100GHz.
Technical Papers
Abstract
RTu1A-1: A 15.6-GHz Quad-Core VCO with Extended Circular Coil Topology for Both Main and Tail Inductors in 8-nm FinFET Process
(08:00 - 08:20)
Abstract
RTu1A-2: A 10.8–14.5GHz 8-Phase 12.5%-Duty-Cycle Non-Overlapping LO Generator with Automatic Phase-and-Duty-Cycle Calibration for 60-GHz 8-Path-Filtering Sub-Sampling Receivers
(08:20 - 08:40)
Abstract
RTu1A-3: A 4.4mW Inductorless 2–20GHz Single-Ended to Differential Frequency Doubler in 45nm RFSOI CMOS Technology
(08:40 - 09:00)
Abstract
RTu1A-4: An Efficient 0.4THz Radiator with 20.6dBm EIRP and 0.2% DC-to-THz Efficiency in 90nm SiGe BiCMOS
(09:00 - 09:20)
24ABC
Abstract
Several novel techniques for self-interference mitigation are presented, including cancellation of interference caused by one transmitter to another in a dual-radio SoC, a distributed cascode power amplifier for full-duplex wireless, advances in frequency-domain-equalization-based wideband self-interference cancellation, and low-noise self-interference cancellation in a receiver.
Technical Papers
Abstract
RTu1B-1: A 28nm CMOS Dual-Band Concurrent WLAN and Narrow Band Transmitter with On-Chip Feedforward TX-to-TX Interference Cancellation Path for Low Antenna-to-Antenna Isolation in IoT Devices
(08:00 - 08:20)
Abstract
RTu1B-2: A Distributed Cascode Power Amplifier with an Integrated Analog SIC Filter for Full-Duplex Wireless Operation in 65nm CMOS
(08:20 - 08:40)
Abstract
RTu1B-3: Frequency-Domain-Equalization-Based Full-Duplex Receiver with Passive-Frequency-Shifting N-Path Filters Achieving >53dB SI Suppression Across 160MHz BW
(08:40 - 09:00)
Abstract
RTu1B-4: A Frequency-Tunable Dual-Path Frequency-Translated Noise-Cancelling Self-Interference Canceller RX with >16dBm SI Power-Handling in 65nm CMOS
(09:00 - 09:20)
25ABC
Abstract
This session reports circuits and systems advances in the mm-wave and sub-THz bands, covering topics from radar sensing to metrology. We start with three papers on advances in the 76–81GHz radar sensors. The first paper showcases a 5.5dB NF radar receiver in a 16nm FinFET followed by a wirelessly synchronized mono-/multi-static radar system. An 8dB NF mixer-first radar receiver with -5dBm IP1dB is also presented. We close with a focus on sensing advances at 160GHz operating frequency detailing a 0.05% resolution permittivity sensor at a 14µs integration window utilizing a whispering gallery resonator and multifold noise reduction techniques in 28nm CMOS, followed by an 18GHz tuning range 130nm SiGe/BiCMOS full-duplex radar transceiver.
Technical Papers
Abstract
RTu1C-1: High-Linearity 76–81GHz Radar Receiver with an Intermodulation Distortion Cancellation and High-Power Limiter
(08:00 - 08:20)
Abstract
RTu1C-2: Mono/Multistatic Mode-Configurable E-Band FMCW Radar Transceiver Module for Drone-Borne Synthetic Aperture Radar
(08:20 - 08:40)
Abstract
RTu1C-4: A CMOS 160GHz Integrated Permittivity Sensor with Resolution of 0.05% Δεr
(09:00 - 09:20)
Abstract
RTu1C-5: A 160-GHz FMCW Radar Transceiver with Slotline-Based High Isolation Full-Duplexer in 130nm SiGe BiCMOS Process
(09:20 - 09:40)
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24ABC
Abstract
This session shows the application of CMOS technology in several emerging applications. Within quantum technologies, an RF transmitter enabling magnetic sensing employing NV centers in diamond is demonstrated, followed by a cryogenic wireline transmitter for quantum processors. The next paper shows how silicon photonics can be employed to enhance the performance of an RF receiver. Finally, a mixer-free built-in self-test (BIST) method for phase and amplitude calibration of a beamforming IC is presented.
Technical Papers
Abstract
RTu2B-1: A Diamond Quantum Magnetometer Based on a Chip-Integrated 4-Way Transmitter in 130-nm SiGe BiCMOS
(10:10 - 10:30)
Abstract
RTu2B-2: A Cryo-CMOS DAC-Based 40Gb/s PAM4 Wireline Transmitter for Quantum Computing Applications
(10:30 - 10:50)
Abstract
RTu2B-3: A mm-Wave CMOS/Si-Photonics Hybrid-Integrated Software-Defined Radio Receiver Achieving >80-dB Blocker Rejection of <-10dBm In-Band Blockers
(10:50 - 11:10)
Abstract
RTu2B-4: Mixer-Free Phase and Amplitude Comparison Method for Built-In Self-Test of Multiple Channel Beamforming IC
(11:10 - 11:30)
25ABC
Abstract
This session will focus on the system design and circuit implementation of mm-wave transceivers tailored for 5G and Satellite Communication (SATCOM) systems. The first paper proposes a dual LO topology, which simplifies complexity of digital and baseband sections in phased array systems. The second paper focuses on a multi-channel phased array at 39GHz with improved power amplifier efficiency. The third presentation describes the highly integrated baseband and IF section of an mm-wave radio for 5G, while the last presentation discusses an ultra-wide-band RF receiver with excellent NF, designed for SATCOM applications.
Technical Papers
Abstract
RTu2C-1: A 24–30GHz 4-Stream CMOS Transceiver Based on Dual-LO Phase-Shifting Fully Connected Architecture
(10:10 - 10:30)
Abstract
RTu2C-2: A 39GHz 2×16-Channel Phased-Array Transceiver IC with Compact, High-Efficiency Doherty Power Amplifiers
(10:30 - 10:50)
Abstract
RTu2C-3: A 14-nm Low-Cost IF Transceiver IC with Low-Jitter LO and Flexible Calibration Architecture for 5G FR2 Mobile Applications
(10:50 - 11:10)
Abstract
RTu2C-4: A Quad-Band RX Phased-Array Receive Beamformer with Two Simultaneous Beams, Polarization Diversity, and 2.1–2.3dB NF for C/X/Ku/Ka-Band SATCOM
(11:10 - 11:30)
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24ABC
Abstract
This session includes four papers on mm-wave key components and receivers. It starts from a compact active quasi-circulator with ultra-wideband TX to RX isolation over 20–38.5GHz in 28nm CMOS. The second paper presents a new D-band phase-shifter concept based on delay manipulating and achieves RMS phase-error of 1.2 degrees without calibration in 45nm RFSOI. The next two papers are high-performance receivers. The first paper presents a 140GHz 4-element RF beamforming receiver, achieving >20dB IRR with 8GHz channel bandwidth in 22nm FDSOI. The final is an N-path filter based block-tolerant receiver with
Technical Papers
Abstract
RTu3B-1: An Ultra-Wideband and Compact Active Quasi-Circulator with Phase Alternated Differential Amplifier
(13:30 - 13:50)
Abstract
RTu3B-2: A D-Band Calibration-Free Passive 360° Phase Shifter with 1.2° RMS Phase Error in 45nm RFSOI
(13:50 - 14:10)
Abstract
RTu3B-3: A 140GHz RF Beamforming Phased-Array Receiver Supporting >20dB IRR with 8GHz Channel Bandwidth at Low IF in 22nm FDSOI CMOS
(14:10 - 14:30)
Abstract
RTu3B-4: A mm-Wave Blocker-Tolerant Receiver Achieving <4dB NF and -3.5dBm B1dB in 65-nm CMOS
(14:30 - 14:50)
25ABC
Abstract
In this session, we present papers addressing IoT transmitter and sub-THz PAs. The first paper presents a passive mixer in 22nm FD-SOI technology for low-power cartesian transmitter. The second paper showcases a D-band SiGe HBT PA module providing high output power (>20dBm) and linearity from 110 to 170GHz. The third paper demonstrates a transformer-based InP HBT PA with high linear power (20dBm) and efficiency (>20%) in D-Band. The last paper presents a SiGe HBT PA operating at 300GHz in a 130nm BiCMOS technology using capacitive feedback.
Technical Papers
Abstract
RTu3C-1: A Reactive Passive Mixer for 16-QAM Cartesian IoT Transmitters in 22nm FD-SOI CMOS
(13:30 - 13:50)
Abstract
RTu3C-2: A 110–170GHz Phase-Invariant Variable-Gain Power Amplifier Module with 20–22dBm Psat and 30dBm OIP3 Utilizing SiGe HBT RFICs
(13:50 - 14:10)
Abstract
RTu3C-3: A D-Band 20.4dBm OP1dB Transformer-Based Power Amplifier with 23.6% PAE in a 250-nm InP HBT Technology
(14:10 - 14:30)
Abstract
RTu3C-4: 305-GHz Cascode Power Amplifier Using Capacitive Feedback Fabricated Using SiGe HBT’s with fmax of 450GHz
(14:30 - 14:50)
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25ABC
Abstract
This session is dedicated to industry presentations. The first presentation will be on recent research results on D-band circuits and systems implemented in 55nm SiGe BiCMOS technology. The second presentation will discuss thermal challenges in GaAs PAs for 5G applications. The last talk will present recent results on PAs implemented in 22nm FDSOI technology with EDMOS.