Optimizing RFSOI Performance Through a T-Shaped Gate and Nano-Second Laser Annealing Techniques

We report on two experiments that were carried out in order to boost the RF performances of PD-SOI devices. In the first experiment we implemented a T-shaped gate on a nominally 40 nm long device to mimic on an advanced RFSOI platform the mushroom gate shape that is usually found in III-V devices. T-shaped gate more than halved the longitudinal gate resistance improving RF figure-of-merits for long finger devices. In a second experiment we used a nano-second laser anneal of the gate poly-Si layer. The reduction of the vertical component of the gate resistance helped to improve the performances of short finger devices.