Broadband, Efficient mm-Wave and THz Power Amplifiers Using Advanced InP HBT Technologies

InP heterojunction bipolar transistor (HBT) technologies have significant power gain at frequencies greater than 100-GHz. Power amplifiers and integrated circuits have been demonstrated with state-of-the-art performance, high operational bandwidth, and high efficiency at mm-Wave, D- and G-Band, and THz operation. This talk will review current results and new IC development from the 250-nm and 130-nm scaling nodes and the novel PA cell topologies they employ – examples include a compact 220-GHz PA with 60-mW output power and 28% power-added-efficiency (PAE), numerous packaged parts covering entire waveguide bands, and a 2-2.4 Watt 90-140 GHz 16-way combined module using Teledyne’s InP HBT chips. Additionally, this talk will review how the InP HBT technology has been used to improve the performance of high frequency test and measurement equipment, as well as mm-wave and THz sources.