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Ultra-Low-Noise Technologies and Amplifiers in InGaAs mHEMTs and GaN HEMTs at Room-Temperature and Cryogenic Operation
The talk gives an overview about the available InGaAs mHEMT and GaN HEMT technologies at Fraunhofer IAF and discusses design aspects for wideband ultra-low-noise amplifiers. The talk discusses specific design tradeoffs for cryogenic and room-temperature operation for the InGaAs mHEMT technologies. The topic of ultra-low-noise InGaAs mHEMT technologies is extended by a discussion about GaN HEMT LNAs with a high linearity.