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High-Power and Highly Efficient Power Amplifiers for D Band Applications in Silicon
In recent years many new mm-wave applications and standards have been emerging. These systems are mostly a response to the ever-growing demand for higher data speed, higher image resolution, and better sensing systems. The same trajectory to THz and higher frequencies will likely to continue in future for higher performance systems. To serve this end, power amplifiers (PAs) play a key role as they largely define the communication/sensing range and power efficiency of these systems. However, these PAs encounter limitations due to increased parasitc loss and reduced maximum available gain from the device especially in silicon platforms. In this talk we introduce multiple innovative techniques to significantly increase the output power and efficiency in silicon-based PAs. They include a gain boosting approach that maintains high gain and high output power, simultaneously, and a novel methodology on stacked power amplifiers that centers on maximizing the efficiency for each transistor and hence achieving record efficiency of the whole PA.