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State-of-the-Art Cryo-LNAs in III-V Technology for Scalable Quantum Computing
The InP HEMT is the preferred transistor technology for cryogenic low-noise amplification from 1GHz up to 200GHz. The InP HEMT shows its superiority at temperatures down to 4K. Despite the long history of III-V based transistors, technology development must be made with knowledge about the special circumstances occurring in III-V materials and device operating under cryogenic conditions. We report on recent progress on optimizing the InP HEMT for cryogenic low-noise amplifier operation with DC power dissipation as low as 0.1mW, about 100 times less power consumption than conventional LNAs.