Ultra-Wide Bandgap Semiconductors for Next Generation High-Frequency Devices

The US Army’s Ultra-Wide Bandgap (UWBG) RF Electronics Center was established to facilitate research aimed at uncovering fundamental knowledge needed to develop next generation RF electronics based on UWBG semiconductors. The center’s main goal is to enable an order-of-magnitude or greater increase in power density over current state-of-the-art devices based on wide bandgap materials like gallium nitride, particularly in the upper mm-wave/sub-mm-wave regions (90–1000GHz) of the EM spectrum. This presentation will provide a brief perspective of where the different UWBG semiconductors fit, as well as give an overview of the accomplishments of the center.