Thermal Management Solutions to GaN Electronics

GaN HEMT technology is a frontrunner in both power and RF application, due to its remarkable material properties that offer high-frequency operation simultaneously with higher power. However, we are still far from experiencing the full potential of GaN HEMT in power densities alongside thermal management. A potential solution for increasing the efficiency in GaN HEMTs has been recognized in its integration with diamond, known for its excellent thermal properties. On the other hand, diamond growth on GaN, did not have much success due to difficulties with diamond-centric processing. Recently our group has demonstrated several key results suitable for Diamond-on-GaN integration.