Challenges and Opportunities of GaN-on-Si Technology for Wireless Applications in the FR3 (8–24GHz) Band

The talk introduces several innovations using Gan-on-Si to enable 5G and 6G communication systems. An advanced 200mm GaN-on-Si E-mode MISHEMT platform will be discussed, offering improved RF performance as well as excellent gain and efficiency at sub-5V voltages. In addition, high linearity transistor architectures are introduced to improve the performance of LNAs and switches.