A 160-GHz FMCW Radar Transceiver with Slotline-Based High Isolation Full-Duplexer in 130nm SiGe BiCMOS Process

In this paper, a slotline-based electrical balance duplexer (EBD) with high geometrical symmetry topology and high common mode rejection is proposed to realize high isolation between the transmitter (TX) and receiver (RX). With the proposed EBD structure, a 160-GHz frequency modulated continuous wave (FMCW) radar transceiver with TX/RX antenna sharing architecture is achieved in the 130nm SiGe BiCMOS process. The chirp signal can be generated covering 147 GHz to 165 GHz by adjusting the operating frequency of the push-push voltage-controlled oscillator (VCO) with the external input control voltage. Using spatial power combining slotline-based antennas and a high resistivity silicon lens, the measured effective isotropic radiated power (EIRP) is over 20 dBm. The chip has a die area of 2.21mm² and consumes 0.6 W of DC power.