Design of MMIC Doherty Power Amplifiers for 5G Applications

In this contribution, design strategies to enhance the efficiency at deep power backoff of Doherty power amplifiers will be presented. Theoretical guidelines together with practical considerations, accounting for the constraints associated with the available technology and the selected application will be discussed. The design and the experimental characterization of some MMIC Doherty amplifiers implemented in GaN technology and optimized for efficiency peaks at different levels of backoff (from 6 and 12dB backoff) will be shown. The circuits have been developed targeting 5G communication systems in mm-wave frequency range.